AS4C4M4

16 Me g FPM DRAM 16 Meg Austin Semiconductor, Inc. 4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 Vcc DQ0 DQ1 W\ RAS\ NC AS4C4M4 PIN ASSIGNMENT (Top View) 24 Pin TSOP (DG) 1 2 3 4 5 6 24 23 22 21 20 19 Vss DQ3 DQ2 CAS\ OE\ A9 FEATURES • Fast Page Mode Operation • CAS\-before-RAS\ Refresh Capability • RAS\-only and Hidden Refresh Capability • Self-refresh Capability • Fast Parallel Test Mode Capability • TTL Compatible Inputs and Outputs • Early Write or Output Enable Controlled Write • JEDEC Standard Pinout • Single +5V (±10%) Power Supply A10 A0 A1 A2 A3 Vcc 7 8 9 10 11 12 18 17 16 15 14 13 A8 A7 A6 A5 A4 Vss OPTIONS • Timing 60ns access 70ns access • Package Plastic TSOP, 24-pin MARKINGS -6 -7 PIN ASSIGNMENT PIN A0 - A10 DQ0 -DQ3 VSS FUNCTION Address Inputs Data In/Out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power (+5V) No Connect DG • Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) XT IT RAS\ CAS\ W\ OE\ VCC NC GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS\-before-RAS\, RAS\-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, microcomputers and personal computers. PERFORMANCE RANGE SPEED -6 -7 tRAC 60 70 tCAC 15 18 tRC 110 130 tPC 40 45 UNITS ns ns For more products and information please visit our web site at www.austinsemiconductor.com AS4C4M4 Rev. 1.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 16 Me g FPM DRAM 16 Meg Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM RAS\ CAS\ W\ Control Clocks VCC VBB Generator VSS AS4C4M4 Refresh Timer Row Decoder Data In Buffer Sense Amps & I/O Refresh Control Memory Array 4,194,304 x 4 Cells Refresh Counter DQ0 to DQ3 (A0 - A10) Row Address Buffer (A0 - A10) Col. Address Buffer Column Decoder Data Out Buffer OE\ ABSOLUTE MAXIMUM RATINGS* Voltage on any pin relative to VCC (VIN, VOUT) .....-1.0V to +7.0V Voltage on VCC supply relative to VSS (VCC).........-1.0V to +7.0V Storage Temperature (Tstg)................................-55°C to +150°C Power Dissipation (PD).............................................................1W Short Circuit Output Current (IOS Address).........................50mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity (plastics). ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%) PARAMETER Supply Voltage Input High Voltage Input Low Voltage NOTES: 1. VCC + 2.0V/20ns, Pulse width is measured at VCC 2. -2.0V/20ns, Pulse width is measured at VSS SYMBOL VCC VIH VIL MIN 4.5 2.4 -0.5 2 TYP 5.0 ----- MAX 5.5 VCC + 0.5 0.8 1 UNITS V V V AS4C4M4 Rev. 1.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 16 Me g FPM DRAM 16 Meg Austin Semiconductor, Inc. AS4C4M4 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%) PARAMETER Input Leakage Current (any input 0