AS4SD16M16

SDRAM S DRAM Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) •