AS4SD2M32DGX-6IT

SDRAM S DRAM Austin Semiconductor, Inc. 512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT & ET) • 64ms, 4,096 cycle refresh (IT & ET) •