AS58C1001

EEPROM E EPROM Austin Semiconductor, Inc. 128K x 8 EEPROM EEPROM Memory AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-38267 MIL-STD-883 AS58C1001 PIN ASSIGNMENT (Top View) 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ), 32-Pin SOP (DG) RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 RES\ WE\ A13 A8 A9 A11 OE\ A10 CE\ I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 FEATURES High speed: 150, 200, and 250ns Data Retention: 10 Years Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) Single +5V (+10%) power supply Data Polling and Ready/Busy Signals Erase/Write Endurance (10,000 cycles in a page mode) Software Data protection Algorithm Data Protection Circuitry during power on/off Hardware Data Protection with RES pin Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size OPTIONS MARKINGS -15 -20 -25 F No. 306 SF No. 305 DCJ No. 508 DG XT IT GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability. The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58C1001 features Data Polling and a Ready/Busy signal to indicate completion of erase and programming operations. This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm. The AS58C1001 is designed for high reliability in the most demanding applications. Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the Page Mode. Timing 150ns access 200ns access 250ns access Packages Ceramic Flat Pack Radiation Shielded Ceramic FP* Ceramic SOJ Plastic SOP Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) *NOTE: Package lid is connected to ground (Vss). For more products and information please visit our web site at www.austinsemiconductor.com AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 EEPROM E EPROM Austin Semiconductor, Inc. AS58C1001 FUNCTIONAL BLOCK DIAGRAM Vcc Vss I/O0 High Voltage Generator I/O7 Ready/Busy OE\ I/O Buffer and Input Latch CE\ WE\ RES\ Control Logic and Timing A0 Y Gating A6 Y Decoder Address Buffer and Latch X Decoder A7 A16 Memory Array Data Latch MODE SELECTION MODE READ STANDBY WRITE DESELECT WRITE INHIBIT DATA POLLING PROGRAM AS58C1001 Rev. 5.5 12/08 CE\ VIL VIH VIL VIL X X VIL X OE\ VIL X VIH VIH X VIL VIL X WE\ VIH X VIL VIH VIH X VIH X RES\ VH X VH VH X X VH VIL RDY/BUSY\ High-Z High-Z High-Z High-Z ----VOL High-Z I/O DOUT High-Z DIN High-Z ----Data Out (I/O7) High-Z Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 EEPROM E EPROM Austin Semiconductor, Inc. FUNCTIONAL DESCRIPTION AUTOMATIC PAGE WRITE The Page Write feature allows 1 to 128 Bytes of data to be written into the EEPROM in a single cycle and allows the undefined data within 128 Bytes to be written corresponding to the undefined address (A0 to A6). Loading the first Byte of data, the data load window of 30μs opens for the second. In the same manner each additional Byte of data can be loaded within 30μs. In case CE\ and WE\ are kept high for 100μs after data input, the EEPROM enters erase and write automatically and only the input data can be written into the EEPROM. In Page mode the data can be written and accessed 104 times per page, and in Byte mode 103 times per Byte. AS58C1001 DATA PROTECTION To protect the data during operation and power on/off, the AS58C1001 has: 1. Data protection against Noise on Control Pins (CE\, OE\, WE\) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the AS58C1001 has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. DATA\ POLLING Data\ Polling allows the status of the EEPROM to be determined. If the EEPROM is set to Read mode during a Write cycle, and inversion of the last Byte of data to be loaded outputs from I/O, to indicate that the EEPROM is performing a Write operation. WRITE PROTECTION (1) Noise protection: Noise on a write cycle will not act as a trigger with a WE\ pulse of less than 20ns. (2) Write inhibit: Holding OE\ low, WE\ high or CE\ high, inhibits a write cycle during power on/off. WE\ AND CE\ PIN OPERATION During a write cycle, addresses are latched by the falling edge of WE\ or CE\, and data is latched by the rising edge of WE\ or CE\. WRITE/ERASE ENDURANCE AND DATA RETENTION The endurance with page programming is 104 cycles (1% cumulative failure rate) and the data retention time is more than 10 years when a device is programmed less than 104 cycles. AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 EEPROM E EPROM Austin Semiconductor, Inc. (EXAMPLE) AS58C1001 Vcc RES\ *unprogrammable *unprogrammable FUNCTIONAL DESCRIPTION (continued) DATA PROTECTION (continued) 2. Data protection at Vcc on/off. When RES\ is low, the EEPROM cannot be erased and programmed. Therefore, data can be protected by keeping RES\ low when Vcc is switched. RES\ should be high during programming because it does not provide a latch function. When Vcc is turned on or off, noise on the control pins generated by external circuits (CPU, etc.) may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable, standby or readout state by using a CPU reset signal to RES\ pin. In addition, when RES\ is kept high at Vcc on/off timing, the input level of control pins (CE\, OE\, WE\) must be held as CE\=Vcc or OE\=LOW or WE\=Vcc level. 3. Software Data Protection To protect against unintentional programming caused by noise generated by external circuits, AS58C1001 has a Software data protection function. To initate Software data protection mode, 3 bytes of data must be input, followed by a dummy write cycle of any address and any data byte. This exact sequence switches the device into protection mode. Write Address 5555 2AAA 5555 Write Data (Normal Data Input) AA 55 A0 The Software data protection mode can be cancelled by inputting the following 6 Bytes. This changes the AS58C1001 to the Non-Protection mode, for normal operation. Address 5555 2AAA 5555 5555 2AAA 5555 Data AA 55 80 AA 55 20 AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 EEPROM E EPROM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1 Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1 Storage Temperature ............................................-65°C to +150°C Operating Temperature Range.............................-55oC to +125oC Soldering Temperature Range...............................................260oC Maximum Junction Temperature**....................................+150°C Power Dissipation...................................................................1.0W AS58C1001 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC; Vcc = 5V +10%) PARAMETER Input High (Logic 1) Voltage 3 Input Low (Logic 0) Voltage Input Voltage (RES\ Pin) 4 Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage CONDITION SYMBOL VIH VIL VH ILI ILO VOH VOL MIN 2.2 -0.3 Vcc-0.5 -2 -2 2.4 MAX VCC + 0.3V 0.8 VCC +1.0 2 2 0.4 UNITS V V V μΑ μΑ V V NOTES 9 2 4 OV < VIN < Vcc Output(s) disabled, OV < VOUT < Vcc IOH = -400 μA IOL = 2.1 mA PARAMETER CONDITIONS IOUT=OmA, Vcc = 5.5V Cycle=1μS, Duty=100% SYM -15 20 MAX -20 20 -25 20 UNITS NOTES Power Supply Current: Operating IOUT=OmA, Vcc = 5.5V Cycle=MIN, Duty=100% ICC3 65 55 50 mA CE\=Vcc, Vcc = 5.5V Power Supply Current: Standby CE\=VIH, Vcc = 5.5V ICC1 350 350 350 μA ICC2 3 3 3 mA CAPACITANCE PARAMETER Input Capacitance Output Capactiance CONDITIONS TA = 25 C, f = 1MHz VIN = 0 o SYMBOL CIN Co MAX 6 12 UNITS pF pF NOTES AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 EEPROM E EPROM Austin Semiconductor, Inc. AS58C1001 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (-55oC < TC < 125oC; Vcc = 5V +10%) Test Conditions Input Pulse Levels: Input rise and fall times: Output Load: Reference levels for measuring timing: 
  0.0V to 3.0V < 20ns 1 TTL Gate +100pF (including scope and jig) 1.5V, 1.5V

     
    
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 AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA PROTECTION CYCLE OPERATION PARAMETER Byte Load Cycle Time Write Cycle Time SYMBOL tBLC tWC MIN 0.55 10 MAX 30 --UNITS μS mS AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION PARAMETER Output Enable Hold Time Output Enable to Write Setup Time Write Start Time Write Cycle Time SYMBOL tOEH tOES tDW tWC MIN 0 0 150 --MAX ------10 UNITS ns ns ns ms AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 EEPROM E EPROM Austin Semiconductor, Inc. AS58C1001 AC ELECTRICAL CHARACTERISTICS FOR PAGE ERASE AND PAGE WRITE OPERATIONS   *# 
  
   
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                                                    μ μ  μ μ AS58C1001 Rev. 5.5 12/08 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 EEPROM E EPROM Austin Semiconductor, Inc. AS58C1001 AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS PARAMETER Address Setup Time Chip Enable to Write Setup Time Write Pulse Width 7 SYMBOL tAS 7 MIN 0 0 MAX ------------------------------- UNITS ns ns ns ns ns ns ns ns ns ns ms μs ns μs μs tCS 8 tCW tWP Address Hold Time Data Setup Time Data Hold Time Chip Enable Hold Time Out Enable to Write Setup Time Output Enable Hold Time Write Cycle Time Byte Load Window Time to Device Busy RES\ to Write Setup Time Vcc to RES\ Setup Time tAH tDS tDH 7 250 250 150 100 10 0 0 0 10 100 120 100 1 tCH tOES tOEH tWC tBL tDB tRP 10 tRES AC TEST CONDITIONS Input Pulse Levels............................................0V to 3V Input Rise and Fall Times....................................