AS8S512K32PEC-MS

i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables Random Access Memory Array Fast Access Times: 12, 15, 20, and 25ns TTL Compatible I/O Fully Static, No Clocks Surface Mount Package 68 Lead PLCC, No. 99 JEDEC M0-47AE Small Footprint, 0.990 Sq. In. Multiple Ground Pins for Maximum Noise Immunity Single +5V (±5%) Supply Operation DESCRIPTION The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and 25ns creating a zero wait state/latency, real-time memory solution. The high speed, 5v supply voltage and control lines,make the device ideal for all your real-time computer memory requirements. The device can be configured as a 512K x 32 and used to create a single chip external data /program memory array solution or via use of the individual chip enable lines, be reconfigured as a 1M x 16 or 2M x 8. The device provides a 50+% space savings when compared to four 512K x 8, 36 pin SOJs. In addition the AS8S512K32 has only a 20pF load on the Addr. lines vs. ~30pF for four plastic SOJs. PIN CONFIGURATIONS AND BLOCK DIAGRAM DQ16 DQ15 A18 A17 A16 A15 A14 Vcc E3\ E2\ E1\ E0\ NC NC NC W\ G\ DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 PIN NAMES A0 - A18 E0\ - E3\ W\ G\ DQ0 - DQ31 Vcc Vss NC Address Inputs Chip Enables Write Enables Output Enable Common Data Input/Output Power (+5V ± 10%) Ground No Connection BYTE CONTROL TABLE Chip Byte Enable Control E0\ DQ0-7 E1\ DQ8-15 E2\ DQ16-23 E3\ DQ24-31 68 67 66 65 64 63 62 61 9 8 7 6 5 4 3 2 1 A0-A18 G\ W\ E0\ E1\ E2\ E3\ 512K x 32 Memory Array DQ0-DQ7 DQ8-DQ15 DQ16-DQ23 DQ24-DQ31 19 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 A13 A12 A11 A10 A09 A08 DQ31 A07 A6 A5 A4 A3 A2 A1 A0 DQ00 Vcc 43 AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC ABSOLUTE MAXIMUM RATINGS* Voltage on any pin relative to Vss Operating Temperature tA (Ambient) Commercial Industrial Storage Temperature, Plastic Power Dissipation Output Current Junction Temperature, TJ RECOMMENDED DC OPERATING CONDITIONS Parameter Sym Min Typ VCC Supply Voltage 4.75 5 VSS Supply Voltage 0 0 Input High Voltage Input Low Voltage VIH VIL 2.2 -0.3 ----- -0.5V to 7.0V 0oC to +70oC -40oC to +85oC -55oC to +125oC 5.0 Watts 20 mA 175oC Max 5.25 0 Vcc+0.5V 0.8 Units V V V V *Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those in di cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load Note: For tEHQZ, tGHQZ and tWLQZ, CL=5pF Vss to 3.0V 5ns 1.5V Figure 2 FIG. 2 Vcc FIG. 3 480Ω Vcc 480Ω Q 255Ω 30pF Q 255Ω 5pF DC ELECTRICAL CHARACTERISTICS Parameter Operating Power Supply Current Standby (TTL) Power Supply Current Full Standby Power Supply Current CMOS Input Leakage Current Output Leakage Current Ouput High Voltage Output Low Voltage Sym ICC1 ICC2 ICC3 ILI ILO VOH VOL Conditions W#=VIL, II/O=0mA, Min Cycle E# VIH, VIN VIL or VIN VIH, f=0MHz E# VCC-0.2V VIN VCC-0.2V or VIN 0.2V VIN=0V to VCC VI/O=0V to VCC IOH=-4.0mA IOL=8.0mA 2.4 0.4 Min Max 12/15 350 120 20 ±5 ±5 20/25 300 125 20 Units ns mA mA mA μA μA V V TRUTH TABLE G# E# W# X H L X H L L L X H H L Mode Standby Output Deselect Read Write Output HIGH Z HIGH Z DOUT DIN Power ICC2 ICC3 ICC1 ICC1 ICC1 CAPACITANCE (f=1.0MHz, VIN=VCC or VSS) Sym Parameter Address Lines CI Data Lines CD/Q Write & Output Enable Line W#, G# Chip Enable Line E0#, E3# Max 20 7 20 7 Unit pF pF pF pF AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC AC CHARACTERISTICS READ CYCLE Parameter Read Cycle Time Address Access Time Chip Enable Access Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Hold from Address Change Output Enable to Output Valid Output Enable to Output in Low Z Output Enable to Output in High Z Symbol JEDEC Alt. tAVAV tRC tAVQV tELQV tELQX tEHQZ tAVQX tGLQV tGLQX tGHQZ tAA tACS tCLZ tCHZ tOH tOE tOLZ tOHZ 0 6 3 6 0 7 3 6 3 7 0 9 12ns Min Max 12 12 12 3 7 3 9 0 9 15ns Min Max 15 15 15 3 9 3 9 20ns Min Max 20 20 20 3 9 25ns Min Max 25 25 25 Units ns ns ns ns ns ns ns ns ns READ CYCLE 1 - W\ HIGH, G\, E\ LOW tAVAV A ADDRESS 1 ADDRESS 2 tAVQV Q tAVQX DATA 1 DATA 2 READ CYCLE 2 - W\ HIGH tAVAV A tAVQV E# tELQV tELQX G# tEHQZ tGLQV tGLQX Q t GHQZ AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC AC CHARACTERISTICS READ CYCLE Parameter Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Data Hold Time Write to Output in High Z Data to Write Time Output Active from End of Write Symbol Alt. JEDEC tAVAV tWC tELWH tELEH tAVWL tAVEL tAVWH tAVEH tWLWH tELEH tWHAZ tEHAZ tWHDX tEHDZ tWLQZ tDVWH tDVEH tWHQX tCW tCW tAS tAS tAW tAW tWP tWP tWR tWR tDH tDH tWHZ tDW tDW tWLZ 12ns Min Max 12 8 8 0 0 8 8 8 10 0 0 0 0 0 6 6 3 6 15ns Min Max 15 10 10 0 0 10 10 10 12 0 0 0 0 0 7 7 3 7 20ns Min Max 20 11 11 0 0 11 11 11 13 0 0 0 0 0 8 8 3 8 25ns Min Max 25 12 12 0 0 12 12 12 14 0 0 0 0 0 9 9 3 9 ns ns ns ns Units ns ns ns ns ns ns ns ns WRITE CYCLE 1 - W\ CONTROLLED tAVAV A E\ tELWH tAVWH tWLWH W\ D tWHAX tAVWL tDVWH tWHDX DATA VALID tWLQZ Q tWHQX HIGH Z AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC WRITE CYCLE 2 - E\ CONTROLLED tAVAV A tAVEL E\ tAVEH tWLEH W\ tDVEH D Q HIGH Z tEHDX DATA VALID tELEH tEHAX PACKAGE DRAWING Package No. 99 68 Lead PLCC JEDEC MO-47AE 0.995 Max 0.956 Max 0.995 0.956 Max Max 0.020 0.015 0.050 BSC 0.180 Max 0.040 Max 0.930 0.890 0.115 Max AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC ORDERING INFORMATION Part Number Access Speed Device Grade AS8S512K32PEC-MS NA Mechanical Sample AS8S512K32PEC-ES NA Engineering Sample AS8S512K32PEC-12/IT 12ns INDUSTRIAL AS8S512K32PEC-15/IT 15ns INDUSTRIAL AS8S512K32PEC-20/IT 20ns INDUSTRIAL AS8S512K32PEC-25/IT 25ns INDUSTRIAL AS8S512K32PEC-12/ET 12ns ENHANCED AS8S512K32PEC-15/ET 15ns ENHANCED AS8S512K32PEC-20/ET 20ns ENHANCED AS8S512K32PEC-25/ET 25ns ENHANCED AS8S512K32PEC-12/XT 12ns MIL-TEMP AS8S512K32PEC-15/XT 15ns MIL-TEMP AS8S512K32PEC-20/XT 20ns MIL-TEMP AS8S512K32PEC-25/XT 25ns MIL-TEMP Availability SEPTEMBER 2006 OCTOBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 CF NOVEMBER 2006 NOVEMBER 2006 NOVEMBER 2006 FAMILY PIN MATRIX DQ16 DQ15 61 A16 A15 A18 A17 A20 A19 E3\ E2\ E1\ E0\ 16Mb-SRAM, 512K x 32: 5.0V = AS8S512K32PEC 3.3V = AS8SLC512K32PEC DQ16 G\ A14 A14 62 Vcc NC W\ 64Mb-SRAM, 2M x 32: 3.3V = AS8SLC2M32PEC DQ16 4Mb-SRAM, 128K x 32: 5.0V = AS8S128K32PEC 68 67 66 65 64 DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 63 9 8 7 6 5 4 3 2 1 DQ15 A16 A15 A14 Vcc E3\ E2\ E1\ E0\ NC NC NC NC NC W\ G\ DQ15 A18 A17 A16 A15 Vcc E3\ E2\ E1\ E0\ NC NC NC W\ G\ DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 10 60 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 59 12 58 13 57 14 56 15 55 16 54 17 AUSTIN SEMICONDUCTOR 68 - LD. PLCC [JEDEC MO-47AE] 53 18 52 19 51 20 50 21 49 22 48 23 47 24 46 25 45 26 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 DQ31 DQ31 DQ31 AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 DQ00 A13 A12 A11 A10 A09 A08 A07 Vcc A6 A5 A4 A3 A2 A1 A0 DQ00 A13 A12 A11 A10 A09 A08 A07 Vcc A6 A5 A4 A3 A2 A1 A0 DQ00 A13 A12 A11 A10 A09 A08 A07 Vcc A6 A5 A4 A3 A2 A1 A0 43 i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC DOCUMENT TITLE 16Mb, 512K x 32, SRAM, 5.0V, 0.990”sq. - 68 LD. PLCC, Multi-Chip Package [iPEM] REVISION HISTORY Rev # 0.0 0.1 History Initial Release Updated Order Chart Release Date September 2005 January 2009 Status Advance Advance AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7