AS8SF384K32

Austin Semiconductor, Inc. AS8SF384K32 128K x 16 SRAM & PIN ASSIGNMENT (Top View) 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in decoupling caps and multiple ground pins for low noise • Organized as 128K x 16 SRAM and 512K x 16 FLASH • Low power CMOS • TTL Compatible Inputs and Outputs • Both blocks of memory are user configurable as 256K x 8 NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC SRAM & FLASH SRAM Mixed Module 68 Lead CQFP (QT) FLASH MEMORY FEATURES • • • • • • • Operation with single 5V (±10%) Eight equal sectors of 64K bytes Any combination of sectors can be concurrently erased Supports full chip erase Embedded erase and program algorithms 20,000 program/erase cycles Hardware write protection SI/O 0 SI/O 1 SI/O 2 SI/O 3 SI/O 4 SI/O 5 SI/O 6 SI/O 7 GND SI/O 8 SI/O 9 SI/O 10 SI/O 11 SI/O 12 SI/O 13 SI/O 14 SI/O 15 NC NC A18 FWE\2 FWE\1 SWE\2 A17 SCS\2 OE\ SCS\1 A16 A15 A14 A13 A12 A11 VCC FI/O 0 FI/O 1 FI/O 2 FI/O 3 FI/O 4 FI/O 5 FI/O 6 FI/O 7 GND FI/O 8 FI/O 9 FI/O 10 FI/O 11 FI/O 12 FI/O 13 FI/O 14 FI/O 15 OPTIONS MARKINGS XT IT PIN A 0-18 PIN DESCRIPTION FUNCTION Address Inputs SRAM Data Input / Outputs FLASH Data Input / Outputs Output Enable SRAM Write Enables FLASH Write Enables SRAM Chip Selects FLASH Chip Selects Power Supply Ground No Connect • Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) • Timing SRAM 35ns SI/O 0-15 FI/O 0-15 OE\ SWE\ 1-2 FWE\ 1-2 FLASH 90ns -35 SCS\ 1-2 • Package Ceramic Quad Flatpack FCS\ 1-2 QT VCC GND NC GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8SF384K32 is a 2 MEG CMOS SRAM and 8 MEG CMOS FLASH Module organized as 128K x 16 (SRAM) and 512K x 16 (FLASH). These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. For more detailed information regarding the FLASH internal operations, programming, command definitions and functional descriptions, please see the AS8F512K32 data sheet located on our website at www.austinsemiconductor.com AS8SF384K32 Rev. 1.2 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 Austin Semiconductor, Inc. FLASH 512K x 8 FCS\2 FEW\2 SRAM & FLASH SRAM Mixed Module AS8SF384K32 M3 M2 M1 / A0-A16 FI/O 8 - FI/O 15 SRAM 128K x 8 SCS\2 SWE\2 FLASH 512K x 8 FCS\1 FWE\1 FI/O 0 -FI/O 7 / A0-A16 SRAM 128K x 8 SCS\1 SWE\1 OE\ A0 - A18 M0 SI/O 8 - SI/O 15 SI/O 0 - SI/O 7 BLOCK DIAGRAM SRAM TRUTH TABLE MODE Read Write Standby OE\ L X X SCS\ L L H SWE\ H L X I\0 DOUT DIN High Z POWER Active Active Standby FLASH TRUTH TABLE OPERATION Read Output Disable Standby and Write Inhibit Write Sector Protect Verify Sector Protect Sector Unprotect Verify Sector Unprotect Erase Operations USER BUS OPERATIONS FCS\1-4 OE\ FWE\1-4 A0 A1 A6 A9 L L H X X X X L H H X X X X H X X X X X X L H L A0 A1 A6 A9 L VID L X X X VID L L H H H L VID see note 2 see note 2 L H H H see note 2 L L H H H H VID L H see note 1 see note 1 see note 1 see note 1 see note 1 I/O Data Out High Z High Z Data In X Data Out Data Out Data Out see note 1 LEGEND: L = VIL, H = VIH, X = Don't Care, VID = 12V, See DC Charateristics for voltage levels NOTE: 1. See Chip/Sector Erase Operation Timings and Alternate CE\ Controlled Write Operation Timings of AS8F512K32 data sheet. 2. See Chart 1 (pg. 6) of AS8F512K32 data sheet. AS8SF384K32 Rev. 1.2 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage of Vcc Supply Relative to Vss......................-.5V to +7V Storage Temperature............................................-65°C to +150°C Short Circuit Output Current(per I/O).................................20mA Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V Maximum Junction Temperature**...................................+150°C *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. PARAMETER Flash Data Retention Flash Endurance (write / erase cycles) 10 years 20,000 SRAM & FLASH SRAM Mixed Module AS8SF384K32 This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) SRAM SRAM PARAMETER Input High (Logic 1) Voltage Input Low (Logic 1) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Power Supply Operating Power Supply Current: Standby Current: CONDITION SYMBOL VIH VIL ILI ILO VOH VOL Vcc Icc MIN 2.2 -0.5 -10 -10 2.4 -4.5 MAX VCC +0.3 0.8 10 10 -0.4 5.5 325 UNITS V V NOTES 1 1, 2 OV < VIN < Vcc Output(s) disabled, OV < VOUT < Vcc IOH = -4.0 mA, Vcc = 4.5 IOL = 8.0 mA, Vcc = 4.5 SCS\VIH; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open, X16 V V V mA 1 1 1 3 ISBT1 20 mA 3 1. All voltages referenced to VSS (GND). 2. -2V for pulse width