MT5C2568

Austin Semiconductor, Inc. 32K x 8 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-88662 •SMD 5962-88552 •MIL-STD-883 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 MT5C2568 AS5C2568 SRAM S RAM PIN ASSIGNMENT (Top View) 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 32-Pin LCC (ECW) 4 3 2 1 32 31 30 FEATURES • • • • • • • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible A6 A5 A4 A3 A2 A1 A0 NC DQ1 5 6 7 8 9 10 11 12 13 A7 A12 A14 NC VCC WE\ A13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE\ A10 CE\ DQ8 DQ7 14 15 16 17 18 19 20 OPTIONS • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2 70ns access2 100ns access • Package(s)3 Ceramic DIP (300 mil) Ceramic DIP (600 mil) Ceramic LCC (28 leads) Ceramic LCC (32 leads) Ceramic Flat Pack Ceramic SOJ • Operating Temperature Ranges Military -55oC to +125oC Industrial -40oC to +85oC • 2V data retention/low power MARKING -12 -15 -20 -25 -35 -45 -55 -70 -100 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-Pin Flat Pack (F) 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 3 2 1 28 27 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 4 5 6 7 8 9 10 11 12 A7 A12 A14 VCC WE\ 26 25 24 23 22 21 20 19 18 DQ2 DQ3 VSS NC DQ4 DQ5 DQ6 28-Pin LCC (EC) A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 13 14 15 16 17 C CW EC ECW F DCJ No. 108 No. 110 No. 204 No. 208 No. 302 No. 500 GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. The “L” version provides a battery backup/low voltage data retention mode, offering 2mW maximum power dissipation at 2 volts. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. XT IT L NOTES: 1. -12 available in IT only. 2. Electrical characteristics identical to those provided for the 45ns access devices. 3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 DQ3 VSS DQ4 DQ5 DQ6 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM A0 MT5C2568 AS5C2568 SRAM S RAM Vcc DECODER 256 x 1024 MEMORY ARRAY GND A14 I/O0 I/O DATA CIRCUIT I/O7 COLUMN I/O 9A128-1 CE\ OE\ CONTROL CIRCUIT WE\ TRUTH TABLE MODE STANDBY READ READ WRITE OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE MT5C2568 / AS5C2568 Rev. 4.5 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Input or DQ Relative to Vss..................................................................-0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss.......................-1V to +7V Storage Temperature..............................................-65oC to +150oC Power Dissipation.......................................................................1W Short Circuit Output Current.................................................50mA Lead Temperature (soldering 10 seconds)........................+260oC Max. Junction Temperature.................................................+175oC MT5C2568 AS5C2568 SRAM S RAM *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0V