ABA-52563-TR1G

Agilent ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Features • Operating frequency: DC ~ 3.5 GHz • 21.5 dB gain • VSWR < 2.0 throughout operating frequency • 9.8 dBm output P1dB Description Agilent’s ABA-52563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package. ABA-52563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. • Unconditionally stable • Single 5V supply (Id = 35 mA) • Lead-free option available Applications • Amplifier for cellular, cordless, special mobile radio, PCS, ISM, wireless LAN, DBS, TVRO, and TV tuner applications Pin Connections and Package Marking GND 1 GND 2 2Hx At 2 GHz, the ABA-52563 offers a small-signal gain of 21.5 dB, output P1dB of 9.8 dBm and 19.9 dBm output third order intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems. • 3.3 dB noise figure Surface Mount Package SOT-363/SC70 Input Output & Vcc GND 3 Vcc Note: Top View. Package marking provides orientation and identification. “x” is character to identify date code. Simplified Schematic Vcc RF Output & Vcc RF Input Ground 2 Ground 3 Ground 1 ABA-52563 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Max. Vcc Device Voltage, RF output to ground (T = 25°C) V +7 Pin CW RF Input Power (Vcc = 5V) dBm +20 Pdiss Total Power Dissipation [3] W 0.4 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance[2] (Vcc = 5V): θjc = 106°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb, is 25°C. Derate 3.5 mW/°C for Tb > 109°C. Electrical Specifications Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise. Symbol Parameter and Test Condition Gp[1] Power Gain (|S21| ) ∆Gp Power Gain Flatness, NF[1] P1dB[1] OIP3[1] 2 VSWRin[1] VSWRout [1] f = 0.1 ~ 2.5 GHz f = 0.1 ~ 3.5 GHz Units Min. Typ. dB 20 21.5 Max. Std Dev. 0.2 dB 0.5 2.1 Noise Figure dB 3.3 Output Power at 1dB Gain Compression dBm 9.8 0.15 Output Third Order Intercept Point dBm 19.9 0.18 Input VSWR 1.2 Output VSWR 1.4 Icc[1] Device Current mA 35 td[1] Group Delay ps 150 4 43 0.12 0.5 Notes: 1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. Cblock RF Output 2Hx RFC RF Input Vcc Cblock Cbypass Figure 1. ABA-52563 Production Test Circuit. 2 ABA-52563 Typical Performance 23 22 22 21 21 20 4.5 4 NF (dB) 23 GAIN (dB) GAIN (dB) Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise. 20 3 19 19 4.5V 5V 5.5V 18 -40°C +25°C +85°C 18 0 0.5 1 1.5 2 2.5 3 3.5 2 0 4 4.5V 5V 5.5V 2.5 17 17 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. Gain vs. Frequency and Voltage. 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 3. Gain vs. Frequency and Temperature. Figure 4. Noise Figure vs. Frequency and Voltage. 14 6 16 12 5 12 4 3 10 P1dB (dBm) P1dB (dBm) NF (dB) 3.5 8 8 6 -40°C +25°C +85°C 2 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 5. Noise Figure vs. Frequency and Temperature. 4 -40°C +25°C +85°C 4 0 2 1 3 4.5V 5V 5.5V 4 0 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Voltage. 4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 7. Output Power for 1 dB Gain Compression vs. Frequency and Temperature. ABA-52563 Typical Performance, continued Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise. 40 35 35 30 25 OIP3 (dBm) OIP3 (dBm) 30 25 20 15 5 15 10 4.5V 5V 5.5V 10 20 -40°C +25°C +85°C 5 0 0 0 1 0.5 1.5 2 2.5 3 3.5 0 4 0.5 1 Figure 8. Output IP3 vs. Frequency and Voltage. 2 2.5 3 3.5 4 Figure 9. Output IP3 vs. Frequency and Temperature. 2.0 70 60 VSWR IN VWSR OUT 1.8 -40°C +25°C +85°C 50 Icc (mA) 1.6 VSWR 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 1.4 40 30 1.2 20 1.0 10 0.8 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 10. Input and Output VSWR vs. Frequency. 4 6 0 1 2 3 4 5 6 VOLTAGE (V) Figure 11. Supply Current vs. Voltage and Temperature. 7 ABA-52563 Typical Scattering Parameters TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise Freq (GHz) S11 Mag. S11 Ang. S21 dB S21 Mag. S21 Ang. S12 dB S12 Mag. S12 Ang. S22 Mag. S22 Ang. K Factor 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.50 4.00 4.50 5.00 5.50 6.00 0.01 0.00 0.00 0.01 0.02 0.03 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.08 0.09 0.09 0.10 0.10 0.11 0.11 0.12 0.16 0.19 0.25 0.30 146.6 134.0 -40.6 -53.2 -56.7 -141.5 -128.1 -127.5 -126.7 -123.9 -125.0 -123.4 -127.4 -133.8 -136.7 -142.5 -143.9 -146.1 -148.4 -149.5 -152.7 -158.7 -163.2 -167.6 165.9 138.3 122.8 112.3 99.3 21.7 21.7 21.7 21.7 21.7 21.8 21.8 21.7 21.7 21.7 21.7 21.7 21.6 21.6 21.6 21.5 21.5 21.4 21.3 21.1 20.8 20.4 20.0 19.7 18.3 16.9 15.1 13.7 12.3 12.10 12.11 12.16 12.19 12.19 12.26 12.24 12.21 12.18 12.16 12.13 12.10 12.05 12.04 12.00 11.94 11.87 11.75 11.56 11.33 10.95 10.51 9.97 9.67 8.25 6.98 5.71 4.85 4.14 -2.6 -4.8 -9.6 -14.5 -19.5 -24.8 -29.8 -34.9 -39.8 -44.7 -49.7 -59.6 -69.4 -79.6 -89.8 -100.4 -111.2 -121.9 -133.2 -144.5 -156.1 -167.5 -178.7 175.9 150.6 126.3 105.0 86.7 70.4 -30.2 -30.5 -30.5 -30.8 -30.8 -30.5 -30.8 -30.5 -30.5 -30.8 -30.8 -30.2 -30.2 -29.6 -29.1 -29.4 -28.6 -28.4 -28.0 -27.7 -27.3 -27.1 -27.3 -26.6 -.26.2 -25.5 -24.7 -23.5 -23.1 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.06 0.07 0.07 0.3 -0.3 0.1 1.2 2.4 1.0 3.1 4.3 6.1 7.4 11.7 10.8 12.4 13.0 14.7 14.3 16.7 16.2 17.3 15.6 15.8 15.6 15.5 16.0 12.0 12.7 9.5 6.0 1.0 0.15 0.15 0.15 0.15 0.14 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.14 0.14 0.13 0.13 0.13 0.13 0.13 0.14 0.12 0.12 0.11 -2.4 -5.1 -9.6 -13.0 -15.7 -15.7 -17.6 -20.3 -22.5 -24.2 -26.4 -29.4 -32.4 -35.3 -37.8 -38.3 -37.8 -37.3 -36.9 -36.4 -35.9 -35.4 -34.9 -34.6 -33.4 -37.1 -48.4 -63.0 -83.5 1.492 1.528 1.523 1.560 1.560 1.516 1.557 1.520 1.523 1.563 1.566 1.490 1.491 1.424 1.370 1.402 1.326 1.309 1.279 1.273 1.263 1.275 1.338 1.285 1.386 1.462 1.585 1.565 1.680 5 Device Models Refer to Agilent’s web site www.agilent.com/view/rf Ordering Information Part Number Devices per Container Container ABA-52563-TR1 3000 7" reel ABA-52563-TR2 10000 13" reel ABA-52563-BLK 100 antistatic bag ABA-52563-TR1G 3000 7" reel ABA-52563-TR2G 10000 13" reel ABA-52563-BLKG 100 antistatic bag Note: For lead-free option,the part number will have the character “G” at the end. Package Dimensions Outline 63 (SOT-363/SC-70) Recommended PCB Pad Layout for Agilent's SC70 6L/SOT-363 Products 0.026 HE E 0.079 e 0.039 D 0.018 Q1 A2 Dimensions in inches. A c A1 L b DIMENSIONS (mm) SYMBOL E D HE A A2 A1 Q1 e b c L 6 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 MIN. 1.15 1.80 1.80 0.80 0.80 0.00 0.10 0.650 BCS 0.15 0.10 0.10 0.30 0.20 0.30 NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. Device Orientation REEL TOP VIEW END VIEW 4 mm 8 mm CARRIER TAPE USER FEED DIRECTION 2H 2H 2H 2H (Package marking example orientation shown.) COVER TAPE Tape Dimensions and Product Orientation for Outline 63 P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 10° MAX. A0 DESCRIPTION 7 10° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5989-0951EN December 4, 2004 5989-1971EN