ACPL-P347-500E

Data Sheet ACPL-P347/ACPL-W347 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Description The Broadcom® The ACPL-P347/W347 contains an AlGaAs LED, which isoptically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gatecontrolled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT with ratings up to 1200V/50A. Features            1.0A maximum peak output current Wide operating VCC range: 15V to 30V 110 ns maximum propagation delay 50 ns maximum propagation delay difference Rail-to-rail output voltage 100 kV/µs minimum Common Mode Rejection (CMR) at VCM = 1500V LED current input with hysteresis ICC = 4.2 mA maximum supply current Under Voltage Lock-Out protection (UVLO) with hysteresis Industrial temperature range: –40°C to +105°C Safety Approval – UL Recognized 3750V/5000 VRMS for 1 min. – CSA – IEC/EN/DIN EN 60747-5-5 VIORM = 891V/1140Vpeak Applications      SiC/GaN MOSFET and IGBT gate drive Motor drives Industrial Inverters Renewable energy inverters Switching power supplies CAUTION! It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. The components featured in this data sheet are not to be used in military or aerospace applications or environments. Broadcom AV02-4078EN December 7, 2017 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Functional Diagram ANODE 1 Truth Table 6 VCC LED NC CATHODE NOTE: 2 5 3 4 VOUT VEE VCC – VEE VCC – VEE NEGATIVE POSITIVE GOING GOING (TURN(TURN-ON) OFF) VO OFF 0V to 30V 30V to 0V LOW ON 0V to 12.1V 11.1V to 0V LOW ON 12.1V to 13.9V 12.9V to 11.1V TRANSITION ON 13.9V to 30V 30V to 12.9V HIGH A 1-µF bypass capacity must be connected between pins VCC and VEE. Ordering information ACPL-P347 is UL Recognized with 3750 VRMS for 1 minute per UL1577. ACPL-W347 is UL Recognized with 5000 VRMS for 1 minute per UL1577. Option Part Number RoHS Compliant Package Surface Mount ACPL-P347 ACPL-W347 -000E Stretched SO-6 X -500E X -060E X -560E X Tape and Reel IEC/EN/DIN EN 60747-5-5 Quantity 100 per tube X X 1000 per reel X 100 per tube X 1000 per reel To order, choose a part number from the part number column and combine with the desired option from the option column to form an order entry. Example 1: ACPL-P347-560E to order product of Stretched SO-6 Surface Mount package in Tape and Reel packaging with IEC/EN/ DIN EN 60747-5-5 Safety Approval in RoHS compliant. Example 2: ACPL-W347000E to order product of Stretched SO-6 Surface Mount package in Tube packaging and RoHS compliant. Option data sheets are available. Contact your Broadcom sales representative or authorized distributor for information. Broadcom AV02-4078EN 2 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Package Outline Drawing ACPL-P347 Stretched SO-6 Package (7-mm Clearance) 1.27 (0.050) BSG 0.381 ±0.127 (0.015 ±0.005) 4.580 +– 0.254 0 Land Pattern Recommendation (0.180 +– 0.010 0.000 ) 0.76 (0.03) 1.27 (0.05) 10.7 (0.421) 2.16 (0.085) 7.62 (0.300) 6.81 (0.268) 0.45 (0.018) 45° 1.590 ±0.127 (0.063 ±0.005) 3.180 ±0.127 (0.125 ±0.005) 7° 7° 7° 0.20 ±0.10 (0.008 ±0.004) 7° 1 ±0.250 (0.040 ±0.010) 5° NOM. Broadcom 9.7 ±0.250 (0.382 ±0.010) 0.254 ±0.050 (0.010 ±0.002) Floating Lead Protusions max. 0.25 (0.01) Dimensions in Millimeters (Inches) Lead Coplanarity = 0.1 mm (0.004 Inches) AV02-4078EN 3 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet ACPL-W347 Stretched SO-6 Package (8-mm Clearance) 4.580 +– 0.254 0 (0.180 +– 0.010 0.000 ) 1.27 (0.050) BSG 0.381 ±0.127 (0.015 ±0.005) Land Pattern Recommendation 0.76 (0.03) 1 6 2 5 3 4 1.27 (0.05) ( 6.807 +– 0.127 0 0.268 +– 0.005 0.000 7.62 (0.300) ) 1.590 ±0.127 (0.063 ±0.005) 7° 45° 0.45 (0.018) 1.905 (0.075) 12.65 (0.5) 3.180 ±0.127 (0.125 ±0.005) 7° 0.20 ±0.10 (0.008 ±0.004) 0.750 ±0.250 (0.0295 ±0.010) 7° 0.254 ±0.050 (0.010 ±0.002) 7° 35° NOM. Floating Lead Protusions max. 0.25 (0.01) 11.500 ±0.25 (0.453 ±0.010) Dimensions in Millimeters (Inches) Lead Coplanarity = 0.1 mm (0.004 Inches) Recommended Pb-Free IR Profile Recommended reflow condition as per JEDEC Standard, J-STD-020 (latest revision). Non-Halide Flux should be used. Regulatory Information The ACPL-P347/W347 is approved by the following organizations. UL Recognized under UL 1577, component recognition program up to VISO = 3750 VRMS (ACPL-P347) and VISO = 5000 VRMS (ACPL-W347). CSA CSA Component Acceptance Notice #5, File CA 88324 IEC/EN/DIN EN 60747-5-5 (Option 060 Only) Maximum Working Insulation Voltage VIORM = 891 Vpeak (ACPL-P347) and VIORM = 1140 Vpeak (ACPL-W347) Broadcom AV02-4078EN 4 ACPL-P347/ACPL-W347 Data Sheet 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 IEC/EN/DIN EN 60747-5-5 Insulation Characteristics (Option 060)a ACPL-P347 Option 060 ACPL-W347 Option 060 for rated mains voltage ≤ 150 VRMS I-IV I-IV for rated mains voltage ≤ 300 VRMS I-IV I-IV for rated mains voltage ≤ 450 VRMS I-III I-IV for rated mains voltage ≤ 600 VRMS I-III I-IV Description Symbol Units Installation classification per DIN VDE 0110/39, Table 1 for rated mains voltage ≤ 1000 VRMS I-III Climatic Classification 40/105/21 Pollution Degree (DIN VDE 0110/39) 40/105/21 2 2 VIORM 891 1,140 Vpeak Input to Output Test Voltage, Method ba VIORM × 1.875 = VPR, 100% Production Test with tm =1 second, Partial discharge < 5 pC VPR 1,671 2,137 Vpeak Input to Output Test Voltage, Method aa VIORM × 1.6 = VPR, Type and Sample Test, tm =10 seconds, Partial discharge < 5 pC VPR 1,426 1,824 Vpeak VIOTM 6,000 8,000 Vpeak TS 175 175 °C Input Current IS, INPUT 230 230 mA Output Power PS, OUTPUT 600 600 mW RS >109 >109 Ω Maximum Working Insulation Voltage Highest Allowable Overvoltagea (Transient Overvoltage tini = 60 seconds) Safety-limiting values – maximum values allowed in the event of a failure Case Temperature Insulation Resistance at TS, VIO = 500V a. Refer to IEC/EN/DIN EN 60747-5-5 Optoisolator Safety Standard section of the Broadcom Regulatory Guide to Isolation Circuits, AV02-2041EN, for a detailed description of Method a and Method b partial discharge test profiles. NOTE: Broadcom These optocouplers are suitable for “safe electrical isolation” only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Surface mount classification is Class A in accordance with CECC 00802. AV02-4078EN 5 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Insulation and Safety-Related Specifications Parameter Symbol ACPL-P347 ACPL-W347 Unit Conditions Minimum External Air Gap (Clearance) L(101) 7.0 8.0 mm Measured from input terminals to output terminals, shortest distance through air. Minimum External Tracking (Creepage) L(102) 8.0 8.0 mm Measured from input terminals to output terminals, shortest distance path along body. 0.08 0.08 mm Through insulation distance conductor to conductor, usually the straight line distance thickness between the emitter and detector. >175 >175 V IIIa IIIa Minimum Internal Plastic Gap (Internal Clearance) Tracking Resistance (Comparative Tracking Index) CTI Isolation Group NOTE: DIN IEC 112/VDE 0303 Part 1 Material Group (DIN VDE 0110, 1/89, Table 1) All Broadcom data sheets report the creepage and clearance inherent to the optocoupler component itself. These dimensions are needed as a starting point for the equipment designer when determining the circuit insulation requirements. However, once mounted on a printed circuit board, minimum creepage and clearance requirements must be met as specified for individual equipment standards. For creepage, the shortest distance path along the surface of a printed circuit board between the solder fillets of the input and output leads must be considered (the recommended land pattern does not necessarily meet the minimum creepage of the device). There are recommended techniques, such as grooves and ribs, that may be used on a printed circuit board to achieve desired creepage and clearances. Creepage and clearance distances will also change depending on factors, such as pollution degree and insulation level. Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Storage Temperature TS –55 +125 °C Operating Temperature TA –40 +105 °C Output IC Junction Temperature TJ — 125 °C Average Input Current IF(AVG) — 25 mA Peak Transient Input Current ( 5V 5, 6 Threshold Input Voltage High to Low VFHL 0.8 — — V VF 1.2 1.55 1.95 V IF = 9 mA 13 VF/TA — –1.7 — mV/°C Input Reverse Breakdown Voltage BVR 5 — — V IR = 100 µA Input Capacitance CIN — 70 — pF f = 1 MHz, VF = 0V VUVLO+ 12.1 13 13.9 V VUVLO- 11.1 12 12.9 VO > 5V, IF = 9 mA UVLOHYS 0.5 1.0 — Input Forward Voltage Temperature Coefficient of Input Forward Voltage UVLO Threshold UVLO Hysteresis Units Test Conditions Figure Notes b, c 3, 4 V a. Maximum pulse width = 10 µs. b. In this test, VOH is measured with a DC load current. When driving capacitive loads, VOH will approach VCC as IOH approaches zero amps. c. Maximum pulse width = 1 ms. Broadcom AV02-4078EN 7 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Switching Specifications (AC) All typical values are at TA = 25°C, VCC – VEE = 10V, VEE = Ground. All minimum and maximum specifications are at recommended operating conditions (TA = –40°C to +105°C, IF(ON) = 7 mA to 11 mA, VF(OFF) = –3.6V to +0.8V, VEE = Ground), unless otherwise noted. Parameter Symbol Min. Typ. Max. Propagation Delay Time to High Output Level tPLH 30 55 110 ns Propagation Delay Time to Low Output Level tPHL 30 55 110 ns Pulse Width Distortion PWD — 0 40 ns PDD (tPHL – tPLH) –50 — +50 ns tPSK — — 50 ns Rise Time tR — 8 28 ns Fall Time tF — 8 28 ns Output High Level Common Mode Transient Immunity |CMH| 100 — — kV/µs TA = 25°C, IF = 9 mA, VCC = 30V, VCM = 1500V with split resistors Output Low Level Common Mode Transient Immunity |CML| 100 — — kV/µs TA = 25°C, VF = 0V, VCC = 30V, VCM = 1500V with split resistors Propagation Delay Difference Between Any Two Parts Propagation Delay Skew Units Test Conditions Rg = 15Ω, Cg = 10 nF, f = 20 kHz, Duty Cycle = 50%, VCC = 15V Figure Notes 7, 8, 9, 10, 11 a 16. 17 b c Cg = 1 nF, f = 20 kHz, Duty Cycle = 50%, VCC = 15V 13 d, e f a. Pulse Width Distortion (PWD) is defined as |tPHL – tPLH| for any given device. b. Propagation Delay Difference (PDD) is the difference between tPHL and tPLH between any two units under the same test condition. c. Propagation Delay Skew (tPSK) is the difference in tPHL or tPLH between any two units under the same test condition.. d. Pin 2 must be connected to LED common. Split resistor network in the ratio 1.5:1 with 232Ω at the anode and 154Ω at the cathode. e. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in the high state (meaning VO > 15.0V). f. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (meaning VO < 1.0V). Broadcom AV02-4078EN 8 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Package Characteristics All typical values are at TA = 25°C. All minimum/maximum specifications are at recommended operating conditions, unless otherwise noted. Parameter Input-Output Momentary Withstand Voltagea Symbol Device Min. Typ. Max. Units Test Conditions VISO ACPL-P347 3750 — — VRMS RH < 50%, t = 1 min., TA = 25°C b c ACPL-W347 5000 — — VRMS RH < 50%, t = 1 min., TA = 25°C c d Input-Output Resistance RI-O — >1012 — Ω VI-O = 500 VDC Input-Output Capacitance CI-O — 0.6 — pF f =1 MHz LED-to-Ambient Thermal Resistance R11 — 135 — °C/W LED-to-Detector Thermal Resistance R12 — 27 — Detector-to-LED Thermal Resistance R21 — 39 — Detector-to-Ambient Thermal Resistance R22 — 47 — Fig. Note , , c e a. The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating, refer to your equipment level safety specification or Broadcom Application Note 1074, Optocoupler Input-Output Endurance Voltage. b. In accordance with UL1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 4500 VRMS for 1 second (leakage detection current limit, II-O ≤ 5 µA). c. Device considered a two-terminal device: pins 1, 2, and 3 shorted together and pins 4, 5, and 6 shorted together. d. In accordance with UL1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 6000 VRMS for 1 second (leakage detection current limit, II-O ≤ 5 µA). e. The device was mounted on a high conductivity test board as per JEDEC 51-7. Broadcom AV02-4078EN 9 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Typical Performance Plots Figure 2: VOL vs. Temperature 0.00 0.2 IF = 9 mA IOUT = -100 mA VCC = 30 V VEE = 0 V -0.05 -0.10 0.18 VOL - OUTPUT LOW VOLTAGE - V (VOH-VCC) - HIGH OUTPUT VOLTAGE DROP - V Figure 1: VOH vs. Temperature -0.15 -0.20 -0.25 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 -0.30 0 -40 -20 0 20 40 60 TA - TEMPERATURE - °C 80 -40 100 3.5 3.5 3.0 3 2.5 2.0 1.5 1.0 IF = 9 mA for ICCH VF = 0 V for ICCL VCC = 15 V VEE = 0 V 0.5 0.0 -40 -20 ICCL 20 40 TA - TEMPERATURE - °C 60 80 100 100 1.5 1 IF = 9 mA for ICCH VF = 0 V for ICCL TA = 25 °C VEE = 0 V ICCL ICCH IFLH - LOW TO HIGH CURRENT THRESHOLD - mA 10 8 6 4 IFLH OFF IFLH ON 2 0 -2 0.5 1 1.5 2 2.5 IFLH - LOW TO HIGH CURRENT THRESHOLD - mA 17.5 20 22.5 25 VCC - SUPPLY VOLTAGE - V 27.5 30 Figure 6: IFLH vs. Temperature 12 Broadcom 80 2 15 TA = 25 °C VCC = 15 V VEE = 0 V 0 20 40 60 TA - TEMPERATURE - °C 0 0 18 14 0 2.5 0.5 ICCH Figure 5: IFLH Hysteresis 16 -20 Figure 4: ICC vs. VCC ICC - SUPPLY CURRENT - mA ICC - SUPPLY CURRENT - mA Figure 3: ICC vs. Temperature VO - OUTPUT VOLTAGE - V VF(OFF) = 0 V IOUT = 100 mA VCC = 30 V VEE = 0 V 3 2 1.8 1.6 1.4 1.2 1 0.8 0.6 IFLH OFF IFLH ON VCC = 15 V VEE = 0 V 0.4 0.2 0 -40 -20 0 20 40 TA - TEMPERATURE - °C 60 80 10 AV02-4078EN 10 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Figure 7: Propagation Delay vs. VCC Figure 8: Propagation Delay vs. IF 75 IF = 9 mA TA = 25 °C Rg = 15 Ω, Cg = 10 nF DUTY CYCLE = 50% f = 20kHz 70 65 TPLH TPHL TP - PROPAGATION DELAY - ns TP - PROPAGATION DELAY - ns 75 60 55 50 45 18 21 24 VCC - SUPPLY VOLTAGE - V 27 60 55 50 30 Figure 9: Propagation Delay vs. Temperature 7 70 75 65 70 60 55 50 IF = 9 mA VCC = 15 V, VEE = 0 V Rg = 15 Ω, Cg = 10 nF DUTY CYCLE = 50% f = 20kHz 45 7.5 8 8.5 9 9.5 10 IF - FORWARD LED CURRENT - mA 10.5 11 Figure 10: Propagaton Delay vs. Rg TP - PROPAGATION DELAY - ns TP - PROPAGATION DELAY - ns 65 TPLH TPHL 45 15 TPLH TPHL IF = 9 mA, TA = 25 °C VCC = 15 V, VEE = 0 V Cg = 10 nF DUTY CYCLE = 50% f = 20kHz 65 TPLH TPHL 60 55 50 45 40 -40 -20 0 20 40 60 TA - TEMPERATURE - °C 80 3 100 Figure 11: Propagation Delay vs. Cg 6 9 12 15 Rg - SERIES LOAD RESISTANCE - Ω 18 Figure 12: Input Current vs. Forward Voltage 100 75 IF = 9 mA, TA = 25 °C VCC = 15 V, VEE = 0 V Rg = 15 Ω DUTY CYCLE = 50% f = 20kHz 70 65 TPLH TPHL IF - FORWARD CURRENT - mA TP - PROPAGATION DELAY - ns VCC = 15 V, VEE = 0 V TA = 25 °C Rg = 15 Ω, Cg = 10 nF DUTY CYCLE = 50% f = 20kHz 70 60 55 10 1 50 45 0.1 1 Broadcom 3 5 7 9 11 13 Cg - SERIES LOAD CAPACITANCE - nF 15 17 19 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 VF - FORWARD VOLTAGE - V AV02-4078EN 11 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Figure 13: CMR Test Circuit wiht Split Resistors Network and Waveforms 232 Ω 1 5V 6 1 μF + _ 2 5 3 4 VCC = 30 V VO + _ + _ 154 Ω VCM = 1500V Application Information Product Overview Description The ACPL-P347/W347 is an optically isolated power output stage capable of driving power or SiC. Based on BCDMOS technology, this gate drive optocoupler delivers higher peak output current, better rail-to-rail output voltage performance and two times faster speed than the previous generation products. The high peak output current and short propagation delay are needed for fast MOSFET switching to reduce dead time and improve system overall efficiency. Rail-to-rail output voltage ensures that the MOSFET’s gate voltage is driven to the optimum intended level with no power loss across the MOSFET. This helps the designer lower the system power which is suitable for bootstrap power supply operation. It has very high CMR (common mode rejection) rating which allows the microcontroller and the MOSFET to operate at very large common mode noise found in industrial motor drives and other power switching applications. The input is driven by direct LED current and has a hysteresis that prevents output oscillation if insufficient LED driving current is applied. This eliminates the need of additional Schmitt trigger circuit at the input LED. The stretched SO6 package which is up to 50% smaller than conventional DIP package facilitates smaller and more compact design. These stretched packages are compliant to many industrial safety standards, such as IEC/EN/DIN EN 60747-5-5, UL 1577, and CSA. Recommended Application Circuit The recommended application circuit shown in Figure 14 illustrates a typical gate drive implementation using the ACPL-P347. The supply bypass capacitors (1 µF) provide the large transient currents necessary during a switching transition. Because of the transient nature of the charging currents, a low current (4.0 mA) power supply will be enough to power the device. The split resistors (in the ratio of 1.5:1) across the LED will provide a high CMR response by providing a balanced resistance network across the LED. The gate resistor RG serves to limit gate charge current and controls the MOSFET switching times. In PC board design, care should be taken to avoid routing the MOSFET drain or source traces close to the ACPL-P347 input as this can result in unwanted coupling of transient signals into ACPL-P347 and degrade performance. Figure 14: Recommended Application Circuit with Split Resistors LED 232 Ω ANODE VCC 1 6 1μF + _ NC 2 154 Ω CATHODE 3 VOUT 4 SiC MOSFET RG Q1 5 VEE + HVDC VCC =20V + _ + _ VEE =5V Q2 - HVDC Broadcom AV02-4078EN 12 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Selecting the Gate Resistor (Rg) Step 1: Calculate Rg minimum from the IOL peak specification. The MOSFET and Rg in Figure 14 can be analyzed as a simple RC circuit with a voltage supplied by ACPL-P347/W347. Rg ≥ ((VCC – VEE) / IOLPEAK) = (((20 – (–5)V) / 1A) = 25 LED Drive Circuit Considerations for High CMR Performance Figure 15 shows the recommended drive circuit for the ACPL-P347/W347 that gives optimum common-mode rejection. The two current setting resistors balance the common mode impedances at the LED’s anode and cathode. The balanced ILED-setting resistors help equalize the common mode voltage change at the anode and cathode. The shunt drive input circuit will also help to achieve high CML performance by shunting the LED in the off state. Figure 15: Recommended High-CMR Drive Circuit VDD = 5.0 V: R 1 = 232 Ω r 1% R 2 = 154 Ω r 1% R 1/R2 ≈ 1.5 +5 V R1 μC ANODE 1 6 VCC 2 5 VOUT 3 4 VEE R2 CATHODE Broadcom Dead Time and Propagation Delay Specifications The ACPL-P347/W347 includes a Propagation Delay Difference (PDD) specification intended to help designers minimize “dead time” in their power inverter designs. Dead time is the time period during which both the high and low side power transistors (Q1 and Q2 in Figure 14) are off. Any overlap in Q1 and Q2 conduction will result in large currents flowing through the power devices between the high and low voltage motor rails. To minimize dead time in a given design, the turn on of LED2 should be delayed (relative to the turn off of LED1) so that under worst-case conditions, transistor Q1 has just turned off when transistor Q2 turns on, as shown in Figure 16. The amount of delay necessary to achieve this condition is equal to the maximum value of the propagation delay difference specification, PDDMAX, which is specified to be 100 ns over the operating temperature range of –40°C to 105°C. Delaying the LED signal by the maximum propagation delay difference ensures that the minimum dead time is zero, but it does not tell a designer what the maximum dead time will be. The maximum dead time is equivalent to the difference between the maximum and minimum propagation delay difference specifications as shown in Figure 17. The maximum dead time for the ACPL-P347/W347 is 100 ns (= 50 ns – (–50 ns)) over an operating temperature range of –40°C to 105°C. Note that the propagation delays used to calculate PDD and dead time are taken at equal temperatures and test conditions because the optocouplers under consideration are typically mounted in close proximity to each other and are switching identical MOSFETs. AV02-4078EN 13 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Figure 16: Minimum LED Skew for Zero Dead Time ILED1 VOUT1 The detector has optical receiver input stage with built-in Schmitt trigger to provide logic compatible waveforms, eliminating the need for additional wave shaping. The hysteresis (Figure 5) provides differential mode noise immunity and minimizes the potential for output signal chatter. Q1 ON Q1 OFF Q2 ON Q2 OFF VOUT2 ILED2 LED Current Input with Hysteresis tPHL MAX tPLH MIN PDD* MAX = (tPHL- tPLH)MAX = tPHL MAX - tPLH MIN *PDD = PROPAGATION DELAY DIFFERENCE NOTE: FOR PDD CALCULATIONS THE PROPAGATION DELAYS ARE TAKEN AT THE SAME TEMPERATURE AND TEST CONDITIONS. Figure 17: Waveforms for Dead Time ILED1 VOUT1 Q1 ON Q1 OFF Q2 ON VOUT2 Q2 OFF ILED2 tPHL MIN tPHL MAX tPLH MIN tPLH MAX (tPHL-tPLH) MAX PDD* MAX MAXIMUM DEAD TIME (DUE TO OPTOCOUPLER) = (tPHL MAX - tPHL MIN) + (tPLH MAX - tPLH MIN) = (tPHL MAX - tPLH MIN) – (tPHL MIN - tPLH MAX) = PDD* MAX – PDD* MIN *PDD = PROPAGATION DELAY DIFFERENCE NOTE: FOR DEAD TIME AND PDD CALCULATIONS ALL PROPAGATION DELAYS ARE TAKEN AT THE SAME TEMPERATURE AND TEST CONDITIONS. Broadcom AV02-4078EN 14 1.0-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 ACPL-P347/ACPL-W347 Data Sheet Thermal Model for ACPL-P347/W347 Stretched SO6 Package Optocoupler Definitions R11: Junction to Ambient Thermal Resistance of LED due to heating of LED R12: Junction to Ambient Thermal Resistance of LED due to heating of Detector (Output IC) R21: Junction to Ambient Thermal Resistance of Detector (Output IC) due to heating of LED. R22: Junction to Ambient Thermal Resistance of Detector (Output IC) due to heating of Detector (Output IC). P 1: Power dissipation of LED (W). P 2: Power dissipation of Detector / Output IC (W). T 1: Junction temperature of LED (°C). T 2: Junction temperature of Detector (°C). Ta: Ambient temperature. Ambient Temperature: Junction to Ambient Thermal Resistances were measured approximately 1.25 cm above optocoupler at ~23°C in still air. Thermal Resistance °C/W R11 135 R12 27 R21 39 R22 47 This thermal model assumes that an 6-pin single-channel plastic package optocoupler is soldered into a 7.62-cm × 7.62-cm printed circuit board (PCB) per JEDEC standards. The temperature at the LED and Detector junctions of the optocoupler can be calculated using the following equations. Equation 1: T1 = (R11 × P1 + R12 × P2) + Ta Equation 2: T2 = (R21 × P1 + R22 × P2) + Ta Using the given thermal resistances and thermal model formula in this data sheet, we can calculate the junction temperature for both LED and the output detector. Both junction temperatures should be within the absolute maximum rating. For example, given P1 = 17 mW, P2 = 124 mW, Ta = 85°C: LED junction temperature, T1 = (R11 × P1 + R12 × P2) + Ta = (135 × 0.017 + 27 × 0.124) + 85 = 90.7°C Output IC junction temperature, T2 = (R21 x P1 + R22 x P2) + Ta = (39 × 0.017 + 47 × 0.124) + 85 = 91.5°C T1 and T2 should be limited to 125°C based on the board layout and part placement. Related Documents AV02-0421EN Application Note 5336 Gate Drive Optocoupler Basic Design for IGBT/MOSFET AV02-3698EN Application Note 1043 Common-Mode Noise: Sources and Solutions AV02-0310EN Reliability Data Plastics Optocouplers Product ESD and Moisture Sensitivity Broadcom AV02-4078EN 15 Broadcom, the pulse logo, Connecting everything, Avago Technologies, Avago, and the A logo are among the trademarks of Broadcom and/or its affiliates in the United States, certain other countries and/or the EU. Copyright © 2017 by Broadcom. All Rights Reserved. The term “Broadcom” refers to Broadcom Limited and/or its subsidiaries. For more information, please visit www.broadcom.com. Broadcom reserves the right to make changes without further notice to any products or data herein to improve reliability, function, or design. Information furnished by Broadcom is believed to be accurate and reliable. However, Broadcom does not assume any liability arising out of the application or use of this information, nor the application or use of any product or circuit described herein, neither does it convey any license under its patent rights nor the rights of others.