Data Sheet
ACPL-P346/ACPL-W346
2.5-Amp Output Current Power, GaN and SiC
MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Description
The Broadcom® ACPL-P346/W346 contains an AlGaAs
LED, which is optically coupled to an integrated circuit with
a power output stage. This optocoupler is ideally suited for
driving power, GaN (Gallium Nitride) and SiC(Silicon
Carbide) MOSFETs used in inverter or AC-DC/DC-DC
converter applications. The high operating voltage range of
the output stage provides the drive voltages required by
gate controlled devices. The voltage and high peak output
current supplied by this optocoupler make it ideally suited
for direct driving MOSFETs at high frequency for high
efficiency conversion. The ACPL-P346 and ACPL-W346
have the highest insulation voltage of VIORM = 891 Vpeak
and VIORM = 1140Vpeak respectively in the IEC/EN/DIN EN
60747-5-5.
Features
2.5A maximum peak output current
2.0A minimum peak output current
Rail-to-rail output voltage
120 ns maximum propagation delay
50 ns maximum propagation delay difference
LED current input with hysteresis
100 kV/µs minimum Common Mode Rejection (CMR) at
VCM = 1500V
ICC = 4.0 mA maximum supply current
Under Voltage Lock-Out protection (UVLO) with
hysteresis
Wide operating VCC Range: 10V to 20V
Industrial temperature range: –40°C to +105°C
Safety Approval
– UL Recognized 3750V/5000 VRMS for 1 min.
– CSA
– IEC/EN/DIN EN 60747-5-5 VIORM = 891V/
1140 Vpeak
Applications
Power, GaN, and SiC MOSFET gate drive
AC and brushless DC motor drives
Switching power supplies
CAUTION! It is advised that normal static precautions be taken in handling and assembly of this component to prevent
damage and/or degradation which may be induced by ESD. The components featured in this data sheet are
not to be used in military or aerospace applications or environments.
Broadcom
AV02-4078EN
June 7, 2018
ACPL-P346/ACPL-W346 Data Sheet
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Functional Diagram
Truth Table
ANODE
1
6
V CC
NC
2
5
V OUT
CATHODE
3
4
V EE
NOTE:
VCC – VEE
VCC – VEE
NEGATIVE
POSITIVE GOING GOING (TURN(TURN-ON)
OFF)
VO
OFF
0V to 20V
0V to 20V
LOW
ON
0V to 8.1V
0V to 7.1V
LOW
ON
8.1V to 9.1V
7.1V to 8.1V
TRANSITION
ON
9.1V to 20V
8.1V to 20V
HIGH
LED
A 1-µF bypass capacity must be connected
between pins VCC and VEE.
Ordering information
ACPL-P346 is UL Recognized with 3750 VRMS for 1 minute per UL1577.
ACPL-W346 is UL Recognized with 5000 VRMS for 1 minute per UL1577.
Option
Part Number
RoHS Compliant
Package
Surface Mount
ACPL-P346
ACPL-W346
-000E
Stretched SO-6
X
-500E
X
-060E
X
-560E
X
Tape and Reel
IEC/EN/DIN EN
60747-5-5
Quantity
100 per tube
X
X
1000 per reel
X
100 per tube
X
1000 per reel
To order, choose a part number from the part number column and combine with the desired option from the option column
to form an order entry.
Example 1:
ACPL-P346-560E to order product of Stretched SO-6 Surface Mount package in Tape and Reel packaging with IEC/EN/
DIN EN 60747-5-5 Safety Approval in RoHS compliant.
Example 2:
ACPL-W346-000E to order product of Stretched SO-6 Surface Mount package in Tube packaging and RoHS compliant.
Option data sheets are available. Contact your Broadcom sales representative or authorized distributor for information.
Broadcom
AV02-4078EN
2
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Package Outline Drawing
ACPL-P346 Stretched SO-6 Package (7-mm Clearance)
1.27 (0.050) BSG
0.381 ±0.127
(0.015 ±0.005)
*4.580 +– 0.254
0
Land Pattern Recommendation
(0.180 +– 0.010
0.000 )
0.76 (0.03)
1.27 (0.05)
10.7
(0.421)
2.16
(0.085)
7.62 (0.300)
6.81 (0.268)
0.45 (0.018)
45°
1.590 ±0.127
(0.063 ±0.005)
3.180 ±0.127
(0.125 ±0.005)
7°
7°
7°
0.20 ±0.10
(0.008 ±0.004)
7°
1 ±0.250
(0.040 ±0.010)
5° NOM.
9.7 ±0.250
(0.382 ±0.010)
0.254 ±0.050
(0.010 ±0.002)
Floating Lead Protusions max. 0.25 (0.01)
Dimensions in Millimeters (Inches)
Lead Coplanarity = 0.1 mm (0.004 Inches)
*Total package length (inclusive of mold flash) 4.834 mm ±0.254 mm (0.190” ±0.010”)
Broadcom
AV02-4078EN
3
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
ACPL-W346 Stretched SO-6 Package (8-mm Clearance)
*4.580 +– 0.254
0
(0.180 +– 0.010
0.000 )
1.27 (0.050) BSG
0.381 ±0.127
(0.015 ±0.005)
Land Pattern Recommendation
0.76 (0.03)
1
6
2
5
3
4
1.27 (0.05)
7.62 (0.300)
6.807 +– 0.127
0
(0.268 +– 0.005
0.000 )
1.590 ±0.127
(0.063 ±0.005)
7°
45°
0.45 (0.018)
1.905
(0.075)
12.65
(0.5)
3.180 ±0.127
(0.125 ±0.005)
7°
0.20 ±0.10
(0.008 ±0.004)
0.750 ±0.250
(0.0295 ±0.010)
0.254 ±0.050
(0.010 ±0.002)
7°
7°
35° NOM.
11.500 ±0.25
(0.453 ±0.010)
Floating Lead Protusions max. 0.25 (0.01)
Dimensions in Millimeters (Inches)
Lead Coplanarity = 0.1 mm (0.004 Inches)
*Total package length (inclusive of mold flash) 4.834 mm ±0.254 mm (0.190” ±0.010”)
Recommended Pb-Free IR Profile
Recommended reflow condition as per JEDEC Standard, J-STD-020 (latest revision). Non-Halide Flux should be used.
Regulatory Information
The ACPL-P346/W346 is approved by the following organizations.
UL
Recognized under UL 1577, component recognition program up to VISO = 3750 VRMS (ACPL-P346) and
VISO = 5000 VRMS (ACPL-W346).
CSA
CSA Component Acceptance Notice #5, File CA 88324
IEC/EN/DIN EN 60747-5-5
(Option 060 Only)
Maximum Working Insulation Voltage VIORM = 891 Vpeak (ACPL-P346) and VIORM = 1140 Vpeak
(ACPL-W346)
Broadcom
AV02-4078EN
4
ACPL-P346/ACPL-W346 Data Sheet
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
IEC/EN/DIN EN 60747-5-5 Insulation Characteristics (Option 060)a
ACPL-P346
Option 060
ACPL-W346
Option 060
for rated mains voltage ≤ 150 VRMS
I-IV
I-IV
for rated mains voltage ≤ 300 VRMS
I-IV
I-IV
for rated mains voltage ≤ 450 VRMS
I-III
I-IV
for rated mains voltage ≤ 600 VRMS
I-III
I-IV
Description
Symbol
Units
Installation classification per DIN VDE 0110/39, Table 1
for rated mains voltage ≤ 1000 VRMS
I-III
Climatic Classification
40/105/21
Pollution Degree (DIN VDE 0110/39)
40/105/21
2
2
VIORM
891
1,140
Vpeak
Input to Output Test Voltage, Method ba
VIORM × 1.875 = VPR, 100% Production Test with tm =1 second,
Partial discharge < 5 pC
VPR
1,671
2,137
Vpeak
Input to Output Test Voltage, Method aa
VIORM × 1.6 = VPR, Type and Sample Test, tm =10 seconds,
Partial discharge < 5 pC
VPR
1,426
1,824
Vpeak
VIOTM
6,000
8,000
Vpeak
TS
175
175
°C
Input Current
IS, INPUT
230
230
mA
Output Power
PS, OUTPUT
600
600
mW
RS
>109
>109
Ω
Maximum Working Insulation Voltage
Highest Allowable Overvoltagea
(Transient Overvoltage tini = 60 seconds)
Safety-limiting values – maximum values allowed in the event of a failure
Case Temperature
Insulation Resistance at TS, VIO = 500V
a. Refer to IEC/EN/DIN EN 60747-5-5 Optoisolator Safety Standard section of the Broadcom Regulatory Guide to Isolation Circuits,
AV02-2041EN, for a detailed description of Method a and Method b partial discharge test profiles.
NOTE:
Broadcom
These optocouplers are suitable for “safe electrical isolation” only within the safety limit data. Maintenance of the
safety data shall be ensured by means of protective circuits. Surface mount classification is Class A in accordance
with CECC 00802.
AV02-4078EN
5
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Insulation and Safety-Related Specifications
Parameter
Symbol
ACPL-P346 ACPL-W346
Unit
Conditions
Minimum External Air Gap
(Clearance)
L(101)
7.0
8.0
mm
Measured from input terminals to output
terminals, shortest distance through air.
Minimum External Tracking
(Creepage)
L(102)
8.0
8.0
mm
Measured from input terminals to output
terminals, shortest distance path along body.
0.08
0.08
mm
Through insulation distance conductor to
conductor, usually the straight line distance
thickness between the emitter and detector.
>175
>175
V
IIIa
IIIa
Minimum Internal Plastic Gap
(Internal Clearance)
Tracking Resistance (Comparative
Tracking Index)
CTI
Isolation Group
NOTE:
DIN EN 60112 (2010-05)
Material Group (DIN VDE 0110, 1/89,
Table 1)
All Broadcom data sheets report the creepage and clearance inherent to the optocoupler component itself. These
dimensions are needed as a starting point for the equipment designer when determining the circuit insulation
requirements. However, once mounted on a printed circuit board, minimum creepage and clearance requirements
must be met as specified for individual equipment standards. For creepage, the shortest distance path along the
surface of a printed circuit board between the solder fillets of the input and output leads must be considered (the
recommended land pattern does not necessarily meet the minimum creepage of the device). There are
recommended techniques, such as grooves and ribs, that may be used on a printed circuit board to achieve desired
creepage and clearances. Creepage and clearance distances will also change depending on factors, such as
pollution degree and insulation level.
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Storage Temperature
TS
–55
+125
°C
Operating Temperature
TA
–40
+105
°C
Output IC Junction Temperature
TJ
—
125
°C
Average Input Current
IF(AVG)
—
25
mA
Peak Transient Input Current ( 5V
12, 13
Threshold Input Voltage High to Low
VFHL
0.8
—
—
V
VF
1.2
1.55
1.95
V
IF = 9 mA
19
VF/TA
—
–1.7
—
mV/°C
Input Reverse Breakdown Voltage
BVR
5
—
—
V
IR = 100 A
Input Capacitance
CIN
—
70
—
pF
f = 1 MHz,
VF = 0V
VUVLO+
8.1
8.6
9.1
V
VUVLO-
7.1
7.6
8.1
VO > 5V,
IF = 9 mA
UVLOHYS
0.5
1.0
—
Input Forward Voltage
Temperature Coefficient of Input
Forward Voltage
UVLO Threshold
UVLO Hysteresis
Units Test Conditions Figure
Notes
1
5, 7
10, 11
V
a. Maximum pulse width = 10 µs.
b. Output is sourced at –2.0A/+2.0A with a maximum pulse width = 10 µs.
c. In this test, VOH is measured with a DC load current. When driving capacitive loads, VOH will approach VCC as IOH approaches zero amps.
d. Maximum pulse width = 1 ms.
Broadcom
AV02-4078EN
7
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Switching Specifications (AC)
All typical values are at TA = 25°C, VCC – VEE = 10V, VEE = Ground. All minimum and maximum specifications are at
recommended operating conditions (TA = –40°C to +105°C, IF(ON) = 7 mA to 11 mA, VF(OFF) = –3.6V to +0.8V,
VEE = Ground), unless otherwise noted.
Parameter
Symbol
Min.
Typ.
Max.
Propagation Delay Time to
High Output Level
tPLH
30
55
120
ns
Propagation Delay Time to
Low Output Level
tPHL
30
55
120
ns
Pulse Width Distortion
PWD
0
50
ns
Propagation Delay Difference
Between Any Two Parts
Units Test Conditions
Rg = 10, Cg = 10 nF,
f = 200 kHz,
Duty Cycle = 50%,
VCC = 10V
Notes
a
PDD
(tPHL – tPLH)
–50
—
+50
ns
tPSK
—
—
40
ns
Rise Time
tR
—
8
30
ns
Fall Time
tF
—
8
30
ns
Output High Level Common
Mode Transient Immunity
|CMH|
100
—
—
kV/µs TA = 25°C, IF = 9 mA,
VCC = 20V, VCM = 1500V
with split resistors
Output Low Level Common
Mode Transient Immunity
|CML|
100
—
—
kV/µs TA = 25°C, VF = 0V,
VCC = 20V, VCM = 1500V
with split resistors
Propagation Delay Skew
Figure
14, 15,
16, 17
24, 25
b
c
Cg = 1 nF, f = 200 kHz,
Duty Cycle = 50%,
VCC = 10V
18, 20
21
d, e
f
a. Pulse Width Distortion (PWD) is defined as |tPHL – tPLH| for any given device.
b. The difference between tPHL and tPLH between any two ACPL-P346 parts under the same test condition.
c. tPSK is equal to the worst case diff erence in tPHL and/or tPLH that will be seen between units at any given temperature and specified test
conditions.
d. Pin 2 must be connected to LED common. Split resistor network in the ratio 1.5:1 with 232Ω at the anode and 154Ω at the cathode.
e. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the
output will remain in the high state (meaning VO > 10.0V).
f. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output
will remain in a low state (meaning VO < 1.0V).
Broadcom
AV02-4078EN
8
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Package Characteristics
All typical values are at TA = 25°C. All minimum/maximum specifications are at recommended operating conditions, unless
otherwise noted.
Parameter
Input-Output Momentary
Withstand Voltagea
Symbol
Device
Min.
Typ.
Max.
Units Test Conditions
VISO
ACPL-P346
3750
—
—
VRMS RH < 50%, t = 1 min.,
TA = 25°C
b c
ACPL-W346
5000
—
—
VRMS RH < 50%, t = 1 min.,
TA = 25°C
c d
Input-Output Resistance
RI-O
—
>5012
—
VI-O = 500 VDC
Input-Output Capacitance
CI-O
—
0.6
—
pF
f =1 MHz
LED-to-Ambient Thermal
Resistance
R11
—
135
—
°C/W
LED-to-Detector Thermal
Resistance
R12
—
27
—
Detector-to-LED Thermal
Resistance
R21
—
39
—
Detector-to-Ambient
Thermal Resistance
R22
—
47
—
Fig.
Note
,
,
c
e
a. The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous
voltage rating. For the continuous voltage rating, refer to your equipment level safety specification or Broadcom Application Note 1074,
Optocoupler Input-Output Endurance Voltage.
b. In accordance with UL1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 4500 VRMS for 1 second (leakage
detection current limit, II-O ≤ 5 µA).
c. Device considered a two-terminal device: pins 1, 2, and 3 shorted together and pins 4, 5, and 6 shorted together.
d. In accordance with UL1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 6000 VRMS for 1 second (leakage
detection current limit, II-O ≤ 5 µA).
e. The device was mounted on a high conductivity test board as per JEDEC 51-7.
Broadcom
AV02-4078EN
9
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Typical Performance Plots
Figure 1: High Ouput Rail Voltage vs. Temperature
IF = 9 mA
IOUT = 0 mA
V CC = 10V
V EE = 0V
10
9.995
9.99
9.985
-20
0
20
40
60
TA - TEMPERATURE - °C
80
-0.250
-0.300
-20
0
20
40
60
TA - TEMPERATURE - °C
80
100
0.0
I F = 9 mA
V OUT = VCC – 10V
V CC = 10V
V EE = 0V
-0.5
-1
-1.5
IOH - OUTPUT HIGH CURRENT - A
IOH - OUTPUT HIGH CURRENT - A
-0.200
Figure 4: IOH vs. VOH
-2
-2.5
-3
IF = 9 mA
V CC = 10V
V EE = 0V
T A = 25°C
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-3.5
-20
0
20
40
60
TA - TEMPERATURE - °C
80
-4.0
100
Figure 5: VOL vs. Temperature
0
1
2
4
6
8
(VOH-VCC) - HIGH OUTPUT VOLTAGE DROP - V
Figure 6: IOL vs. Temperature
6
0.18
IOL - OUTPUT LOW CURRENT - A
0.16
VOL - OUTPUT LOW VOLTAGE - V
-0.150
-40
0
0.14
0.12
0.10
0.08
V F (OFF)= 0V
IOUT = 100 mA
V CC = 10V
V EE = 0V
0.06
0.04
0.02
Broadcom
-0.100
100
Figure 3: IOH vs. Temperature
0.00
-40
IF = 9 mA
IOUT = -100 mA
V CC = 10V
V EE = 0V
-0.050
-0.350
9.98
-40
-4
-40
0.000
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP - V
VOH - HIGH OUTPUT RAIL VOLTAGE - V
10.005
Figure 2: VOH vs. Temperature
-20
0
20
40
60
TA - TEMPERATURE - °C
80
100
5
4
3
V F (OFF)= 0V
V OUT = 10V
V CC = 10V
V EE = 0V
2
1
0
-40
-20
0
20
40
60
TA - TEMPERATURE - °C
80
100
AV02-4078EN
10
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Figure 7: IOL vs. VOL
Figure 8: RDS,OH vs. Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
V F (OFF)= 0V
V CC = 10V
V EE = 0V
T A = 25°C
0
2
4
6
VOL - OUTPUT LOW VOLTAGE - V
8
2.5
2.0
1.5
I F = 9 mA
I OUT = -2A
V CC = 10V
V EE = 0V
1.0
0.5
0.0
-40
-20
0
20
40
60
TA - TEMPERATURE - °C
80
100
Figure 10: ICC vs. Temperature
3.5
2.0
1.8
3.0
1.6
ICC - SUPPLY CURRENT - mA
RDS,OL - LOW OUTPUT TRANSISTOR - RDS(ON)Ω
3.0
10
Figure 9: RDS,OL vs. Temperaure
1.4
1.2
1.0
0.8
0.6
V F(OFF) = 0V
IOUT = 2A
V CC = 10V
V EE = 0V
0.4
0.2
0.0
-40
-20
0
20
40
TA - TEMPERATURE - °C
60
80
2.5
2.0
1.5
1.0
0.5
0.0
-40
100
Figure 11: ICC vs. VCC
3.5
12
3
10
2.5
2
1.5
IIccL
CCL
IF = 9 mA for ICCH
V F = 0V for I CCL
T A = 25°C
V EE = 0V
1
0.5
IIccH
CCH
Broadcom
12
-20
0
IIccL
CCL
IIccH
CCH
20
40
60
TA - TEMPERATURE - °C
80
100
T A = 25°C
V CC = 10V
V EE = 0V
8
6
IFLHON
IfLH
4
IfHL
IFLHOFF
2
0
10
IF = 9 mA for ICCH
V F = 0V for I CCL
V CC = 10V
V EE = 0V
Figure 12: IFLH Hysteresis
VO - OUTPUT VOLTAGE - V
ICC - SUPPLY CURRENT - mA
3.5
RDS,OH - HIGH OUTPUT TRANSISTOR - RDS(ON)Ω
IOL - OUTPUT LOW CURRENT - A
ACPL-P346/ACPL-W346 Data Sheet
14
16
VCC - SUPPLY VOLTAGE - V
18
20
0
0
0.5
1
1.5
2
2.5
IFLH - LOW TO HIGH CURRENT THRESHOLD - mA
3
AV02-4078EN
11
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Figure 13: IFLH vs. Temperature
Figure 14: Propagation Delay vs. IF
70
2.5
2.0
TP - PROPAGATION DELAY - ns
IFLH - LOW TO HIGH CURRENT THRESHOLD - mA
ACPL-P346/ACPL-W346 Data Sheet
1.5
1.0
IFLH ON
IfLH
V CC = 10V
V EE = 0V
0.5
IFLH OFF
ifHL
55
50
-20
0
20
40
60
TA - TEMPERATURE - °C
80
TPLH
TpLH
45
TPHL
TpHL
100
Figure 15: Propagation Delay vs. Temperature
7
7.5
8
8.5
9
9.5
10
IF - FORWARD LED CURRENT - mA
11
60
IF = 9 mA
V CC = 10V, VEE = 0V
R g= 10Ω, C g = 10 nF
DUTY CYCLE = 50%
f = 200 kHz
60
59
TP - PROPAGATION DELAY - ns
TP - PROPAGATION DELAY - ns
65
55
TPLH
TpLH
50
45
-40
IF = 9 mA, T A = 25°C
V CC = 10V, VEE = 0V
C g = 10 nF
DUTY CYCLE = 50%
f = 200 kHz
58
57
56
TPLH
TpLH
TpHL
TPHL
55
54
53
TPHL
TpHL
52
-20
0
20
40
TA - TEMPERATURE - °C
60
80
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Rg - SERIES LOAD RESISTANCE - Ω
100
Figure 17: Propagaton Delay vs. Cg
Figure 18: Rise and Fall Times vs. Cg
40
70
60
35
TR/TF - RISE & FALL TIME - ns
IF = 9 mA, T A = 25°C
V CC = 10V, VEE = 0V
Rg = 10Ω,
DUTY CYCLE = 50%
f = 200 kHz
65
TPLH
TPLH
TPHL
TPHL
55
50
IF = 9 mA, T A = 25°C
V CC = 10V, VEE = 0V
DUTY CYCLE = 50%
f = 200 kHz
30
25
20
15
TrTR
10
TfTF
5
45
10.5
Figure 16: Propagation Delay vs. Rg
70
TP - PROPAGATION DELAY - ns
60
40
0.0
-40
V CC = 10V, V EE = 0V
T A = 25°C
R g= 10Ω, C g = 10 nF
DUTY CYCLE = 50%
f = 200 kHz
65
0
Broadcom
5
10
15
Cg - SERIES LOAD CAPACITANCE - nF
20
0
0
1
2
3
4
5
6
7
Cg - SERIES LOAD CAPACITANCE - nF
8
9
10
AV02-4078EN
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2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Figure 19: Input Current vs. Forward Voltage
IF - FORWARD CURRENT - mA
100
10
1
0.1
1.4
1.45
1.5
1.55
1.6
1.65
VF - FORWARD VOLTAGE - V
1.7
1.75
1.8
Figure 20: tr and tf Test Circuit and Waveforms
IF
1
IF = 7 to 11 mA ,
200 kHz, 50%
Duty Cycle
6
tr
1 μF
2
VO
5
90%
+
_
50%
1 nF
3
tf
V CC = 10V
V OUT
10%
4
tPLH
tPHL
Figure 21: CMR Test Circuit wiht Split Resistors Network
232 Ω
1
5V
6
+
_
1 μF
2
5
3
4
VO
V CC = 20V
+
_
+
_
154 Ω
V CM = 1500V
Broadcom
AV02-4078EN
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ACPL-P346/ACPL-W346 Data Sheet
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Application Information
Recommended Application Circuit
Product Overview Description
The recommended application circuit shown in Figure 22
illustrates a typical gate drive implementation using the
ACPL-P346.
The ACPL-P346/W346 is an optically isolated power output
stage capable of driving power, GaN or SiC MOSFET.
Based on BCDMOS technology, this gate drive optocoupler
delivers higher peak output current, better rail-to-rail output
voltage performance and two times faster speed than the
previous generation products.
The high peak output current and short propagation delay
are needed for fast MOSFET switching to reduce dead time
and improve system overall efficiency. Rail-to-rail output
voltage ensures that the MOSFET’s gate voltage is driven to
the optimum intended level with no power loss across the
MOSFET. This helps the designer lower the system power
which is suitable for bootstrap power supply operation.
It has very high CMR (common mode rejection) rating which
allows the microcontroller and the MOSFET to operate at
very large common mode noise found in industrial motor
drives and other power switching applications. The input is
driven by direct LED current and has a hysteresis that
prevents output oscillation if insufficient LED driving current
is applied. This will eliminates the need of additional Schmitt
trigger circuit at the input LED.
The supply bypass capacitors (1 µF) provide the large
transient currents necessary during a switching transition.
Because of the transient nature of the charging currents, a
low current (4.0 mA) power supply will be enough to power
the device. The split resistors (in the ratio of 1.5:1) across
the LED will provide a high CMR response by providing a
balanced resistance network across the LED.
The gate resistor RG serves to limit gate charge current and
controls the MOSFET switching times.
In PC board design, care should be taken to avoid routing
the MOSFET drain or source traces close to the ACPL-P346
input as this can result in unwanted coupling of transient
signals into ACPL-P346 and degrade performance.
The stretched SO6 package, which is up to 50% smaller
than a conventional DIP package, facilitates a smaller and
more compact design. These stretched packages are
compliant to many industrial safety standards, such as
IEC/EN/DIN EN 60747-5-5, UL 1577 and CSA.
Figure 22: Recommended Application Circuit with Split Resistors LED
232Ω
+
_
ANODE
1
NC
2
VCC
6
VOUT
5
1 μF
Rg
VCC =10V
+
_
+ HVDC
Q1
154Ω CATHODE
3
VEE
4
Q2
- HVDC
Broadcom
AV02-4078EN
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ACPL-P346/ACPL-W346 Data Sheet
Selecting the Gate Resistor (Rg)
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Figure 23: Recommended High-CMR Drive Circuit
Step 1: Calculate Rg minimum from the IOL peak
specification. The MOSFET and Rg in Figure 22 can be
analyzed as a simple RC circuit with a voltage supplied by
ACPL-P346/W346.
Rg ≥ ((VCC – VEE) / IOLPEAK) –RDSON(MIN)
= ((10 – 0V) / 25A) – 0.3Ω
The external gate resistor, Rg and internal minimum turn-on
resistance, RDSON will ensure the output current will not
exceed the device absolute maximum rating of 2.5A.
Step 2: Check the ACPL-P346/W346 power dissipation and
increase Rg if necessary. The ACPL-P346/W346 total
power dissipation (PT) is equal to the sum of the emitter
power (PE) and the output power (PO).
PT
= PE + PO
PE
= IF × VF × Duty Cycle
PO
= PO(BIAS) + PO(SWITCHING)
= ICC × (VCC – VEE) + PHS + PLS
PHS
= (VCC × QG × f) × RDS,OH(MAX) / (RDS,OH(MAX) +
Rg) / 2
PLS
= (VCC × QG × f) × RDS,OL(MAX) / (RDS,OL(MAX) +
Rg) / 2
Using IF (worst case) = 11 mA, Rg = 3.7Ω, Max Duty Cycle
= 80%, QG = 100 nC (650V 20A MOSFET), f = 200 kHz, and
TA max. = 85°C:
PE
= 11 mA × 1.95V × 0.8 = 17 mW
PHS
= (10V × 100 nC × 200 kHz) × 3.5 / (3.5 + 3.7) / 2
= 48.6 mW
= (10V × 100 nC × 200 kHz) × 2.0/(2.0 + 3.7)/2
= 35.1 mW
PO
= 4 mA × 10V + 48.6 mW + 35.1 mW
= 123.7 mW < 500 mW (PO(MAX) at 85°C)
The value of 4 mA for ICC in the previous equation is the
maximum ICC over the entire operating temperature range.
Since PO is less than PO(MAX), Rg = 3.7Ω is alright for the
power dissipation.
Broadcom
R 1 ANODE
1
ILP
C LA
2
μC
R2
3
CATHODE
= 3.7Ω
PLS
VDD = 5.0V:
R 1 = 232 Ω ±1%
R 2 = 154 Ω ±1%
R 1 /R2 ≈ 1.5
+5V
6 VCC
5
VOUT
ILN
C LC
4 VEE
LED Drive Circuit Considerations
for High CMR Performance
Figure 23 shows the recommended drive circuit for the
ACPL-P346/W346 that gives optimum common-mode
rejection. The two current setting resistors balance the
common mode impedances at the LED’s anode and
cathode. Common-mode transients can be capacitive
coupled from the LED anode, through CLA (or cathode
through CLC) to the output-side ground causing current to
be shunted away from the LED (which is not wanted when
the LED should be on) or conversely cause current to be
injected into the LED (which is not wanted when the LED
should be off).
Table 1 shows the directions of ILP and ILN depend on the
polarity of the common-mode transient. For transients
occurring when the LED is on, common-mode rejection
(CMH, since the output is at "high" state) depends on LED
current (IF). For conditions where IF is close to the switching
threshold (IFLH), CMH also depends on the extent to which
ILP and ILN balance each other. In other words, any
condition where a common-mode transient causes a
momentary decrease in IF (meaning when dVCM/dt > 0 and
|ILP| > |ILN|, referring to Table 1) will cause a common-mode
failure for transients which are fast enough.
Likewise for a common-mode transient that occurs when
the LED is off (that is, CML, since the output is at "low"
state), if an imbalance between ILP and ILN results in a
transient IF equal to or greater than the switching threshold
of the optocoupler, the transient “signal” may cause the
output to spike above 1V, which constitutes a CML failure.
The balanced ILED-setting resistors help equalize the
common mode voltage change at the anode and cathode.
The shunt drive input circuit will also help to achieve high
CML performance by shunting the LED in the off state.
AV02-4078EN
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2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Table 1: Common Mode Pulse Polarity and LED Current Transients
dVCM/dt
Positive (>0)
Negative( |ILN|,
IF Is Momentarily IF Is Momentarily
ILP Direction
Away from LED anode through CLA Away from LED cathode through CLC
Toward LED anode through CLA
Toward LED cathode through CLC
Dead Time and Propagation Delay
Specifications
The ACPL-P346/W346 includes a Propagation Delay
Difference (PDD) specification intended to help designers
minimize “dead time” in their power inverter designs. Dead
time is the time period during which both the high and low
side power transistors (Q1 and Q2 in Figure 22) are off. Any
overlap in Q1 and Q2 conduction will result in large currents
flowing through the power devices between the high and low
voltage motor rails.
Increase
Decrease
Decrease
Increase
LED Current Input with Hysteresis
The detector has optical receiver input stage with built-in
Schmitt trigger to provide logic compatible waveforms,
eliminating the need for additional wave shaping. The
hysteresis (Figure 12) provides differential mode noise
immunity and minimizes the potential for output signal
chatter.
Figure 24: Minimum LED Skew for Zero Dead Time
ILED1
To minimize dead time in a given design, the turn on of
LED2 should be delayed (relative to the turn off of LED1) so
that under worst-case conditions, transistor Q1 has just
turned off when transistor Q2 turns on, as shown in
Figure 24. The amount of delay necessary to achieve this
condition is equal to the maximum value of the propagation
delay difference specification, PDDMAX, which is specified
to be 100 ns over the operating temperature range of –40°C
to 105°C.
VOUT1
Delaying the LED signal by the maximum propagation delay
difference ensures that the minimum dead time is zero, but
it does not tell a designer what the maximum dead time will
be. The maximum dead time is equivalent to the difference
between the maximum and minimum propagation delay
difference specifications as shown in Figure 25. The
maximum dead time for the ACPL-P346/W346 is 100 ns
(= 50 ns – (–50 ns)) over an operating temperature range of
–40°C to 105°C.
*PDD = Propagation Delay Difference
Note: For PDD calculations, the propagation delays
are taken at the same temperature and test conditions.
Q1 ON
Q1 OFF
Q2 ON
VOUT2
ILED2
Q2 OFF
tPHL MAX
tPLH MIN
PDD* MAX = (tPHL - tPLH) MAX = tPHL MAX - tPLH MIN
Note that the propagation delays used to calculate PDD and
dead time are taken at equal temperatures and test
conditions because the optocouplers under consideration
are typically mounted in close proximity to each other and
are switching identical MOSFETs.
Broadcom
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2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Figure 25: Waveforms for Dead Time
ILED1
VOUT1
VOUT2
Q1 ON
Q1 OFF
Q2 ON
Q2 OFF
ILED2
tPLH MIN
tPHL MAX
tPLH MIN
tPLH MAX
(tPHL - tPLH) MAX
PDD* MAX
MAXIMUM DEAD TIME
(DUE TO OPTOCOUPLER)
= (tPHL MAX - tPHL MIN) + (tPLH MAX - tPLH MIN)
= (tPHL MAX - tPLH MIN) + (tPHL MIN - tPLH MAX)
= PDD* MAX - PDD* MIN
*PDD = Propagation Delay Difference
Note: For Dead Time and PDD calculations, all propagation
delays are taken at the same temperature and test conditions.
Broadcom
AV02-4078EN
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2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
ACPL-P346/ACPL-W346 Data Sheet
Thermal Model for ACPL-P346/W346 Stretched SO6 Package
Optocoupler
Definitions
R11:
Junction to Ambient Thermal Resistance of LED
due to heating of LED
R12:
Junction to Ambient Thermal Resistance of LED
due to heating of Detector (Output IC)
R21:
Junction to Ambient Thermal Resistance of
Detector (Output IC) due to heating of LED.
R22:
Junction to Ambient Thermal Resistance of
Detector (Output IC) due to heating of Detector
(Output IC).
P 1:
Power dissipation of LED (W).
P 2:
Power dissipation of Detector / Output IC (W).
T 1:
Junction temperature of LED (°C).
T 2:
Junction temperature of Detector (°C).
Ta:
Ambient temperature.
Ambient Temperature: Junction to Ambient Thermal
Resistances were measured approximately 1.25 cm above
optocoupler at ~23°C in still air.
Thermal Resistance
°C/W
R11
135
R12
27
R21
39
R22
47
This thermal model assumes that an 6-pin single-channel
plastic package optocoupler is soldered into a 7.62-cm ×
7.62-cm printed circuit board (PCB) per JEDEC standards.
The temperature at the LED and Detector junctions of the
optocoupler can be calculated using the following equations.
Equation 1:
T1 = (R11 × P1 + R12 × P2) + Ta
Equation 2:
T2 = (R21 × P1 + R22 × P2) + Ta
Using the given thermal resistances and thermal model
formula in this data sheet, we can calculate the junction
temperature for both LED and the output detector. Both
junction temperatures should be within the absolute
maximum rating.
For example, given P1 = 17 mW, P2 = 124 mW, Ta = 85°C:
LED junction temperature,
T1
= (R11 × P1 + R12 × P2) + Ta
= (135 × 0.017 + 27 × 0.124) + 85
= 90.7°C
Output IC junction temperature,
T2
= (R21 x P1 + R22 x P2) + Ta
= (39 × 0.017 + 47 × 0.124) + 85
= 91.5°C
T1 and T2 should be limited to 125°C based on the board
layout and part placement.
Broadcom
AV02-4078EN
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ACPL-P346/ACPL-W346 Data Sheet
2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with
Rail-to-Rail Output
Related Documents
AV02-0421EN
Application Note 5336
Gate Drive Optocoupler Basic Design for IGBT/MOSFET
AV02-3698EN
Application Note 1043
Common-Mode Noise: Sources and Solutions
AV02-0310EN
Reliability Data
Plastics Optocouplers Product ESD and Moisture Sensitivity
Broadcom
AV02-4078EN
19
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