ACPM-5002-TR1

ACPM-5002-TR1 Multimode PA - UMTS Band2, LTE Band25 and CDMA PCS 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 (1850-1910MHz) and CDMA PCS band including BC14 (1850-1915MHz). The ACPM-5002-TR1 meets stringent linearity requirements up to 28.6dBm output power for UMTS Rel.99 and 28.0dBm for CDMA. The 3mmx3mm form factor package is self contained, incorporating 50ohm input and output matching networks. The PA also contains internal DC blocking capacitors for RF input and output ports.  Thin Package (0.9mm typ) The ACPM-5002-TR1 features 5th generation of CoolPAM (CoolPAM5) circuit technology which supports 3 power modes – active bypass, mid power and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low and medium power range. The active bypass feature is added to CoolPAM5 to enhance the PAE further at low output range and it enables the PA to have exceptionally low quiescent current. It dramatically saves the average power consumption and accordingly extends the talk time of mobiles and prolongs a battery life. A directional coupler is integrated into the module and both coupling and isolation ports are available externally, supporting daisy chain. The integrated coupler has excellent coupler directivity, which minimizes the coupled output power variation or delivered power variation caused by the load mismatch from the antenna. The coupler directivity, or the output power variation into the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as well as compliance tests for the system specifications. The ACPM-5002 has integrated on-chip Vref and on-module bias switch as the one of the key features of the CoolPAM-5, so an external constant voltage source is not required, eliminating the external LDO regulators and switches from circuit boards of mobile devices. It also makes the PA fully digital-controllable by the Ven pin that simply turns the PA on and off from the digital control logic input from baseband chipsets. All of the digital control input pins  Excellent Linearity  3-mode power control with Vbp and Vmode – Bypass / Mid Power Mode / High Power Mode  High Efficiency at max output power  10-pin surface mounting package  Internal 50ohm matching networks for both RF input and output  Integrated coupler – Coupler and Isolation ports for daisy chain  Lead-free, RoHS compliant, Green Applications  UMTS Band2  LTE Band25  CDMA PCS(BC1) and BC14 Ordering Information Part Number Number of Devices Container ACPM-5002-TR1 1000 178mm (7”) Tape/Reel ACPM-5002-BLK 100 Bulk Description (Cont.) such as the Ven, Vmode and Vbp are fully CMOS compatible and can operate down to the 1.35V logic. The current consumption by digital control pins is negligible. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage. Description Min. RF Input Power (Pin) Typ. Max. Unit 0 10 dBm DC Supply Voltage (Vcc1, Vcc2) 0 3.4 5.0 V Enable Voltage (Ven) 0 2.6 3.3 V Mode Control Voltage (Vmode) 0 2.6 3.3 V Bypass Control (Vbp) 0 2.6 3.3 V Storage Temperature (Tstg) -55 25 +125 °C Description Min. Typ. Max. Unit DC Supply Voltage (Vcc1, Vcc2) 3.2 3.4 4.2 V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V UMTS CDMA 1850 1850 1910 1915 MHz MHz UMTS CDMA -20 -30 85 85 °C °C Recommended Operating Condition Enable Voltage (Ven) Mode Control Voltage (Vmode) Bypass Control Voltage (Vbp) Operating Frequency (fo) Ambient Temperature (Ta) 25 25 Operating Logic Table Power Mode Ven Vmode Vbp Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode High Low X ~ 28.6 dBm ~ 27.6 dBm Mid Power Mode High High Low ~ 17 dBm ~ 16 dBm Bypass Mode High High High ~ 7 dBm ~ 6 dBm Shut Down Mode Low Low Low – – 2 Electrical Characteristics for WCDMA Mode – Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm – Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise. Characteristics Condition Min. Typ. Operating Frequency Range Maximum Output Power (High Power Mode) Gain Power Added Efficiency Total Supply Current 1910 1915 MHz MHz 1850 1850 Rel99 28.6 dBm HSDPA, HSUPA MPR=0dB 27.6 dBm CDMA2000 RC1 28.25 High Power Mode, Pout=28.6dBm 25 dBm 28.5 dB Mid Power Mode, Pout=17dBm 14.5 18.5 dB Bypass Mode, Pout=7dBm 7 11 dB High Power Mode, Pout=28.6dBm 36.7 40.1 % Mid Power Mode, Pout=17dBm 15.3 20.2 % Bypass Mode, Pout=7dBm 6.8 12.3 % High Power Mode, Pout=28.6dBm 530 580 mA Mid Power Mode, Pout=17dBm 72 95 mA 20 mA Mid Power Mode, Pout=13.5dBm 50 Bypass Mode, Pout=7dBm 11 High Power Mode mA 8.5 85 117 mA 150 mA Mid Power Mode 10 20 30 mA Bypass Mode 1 3.1 5 mA High Power Mode Enable Current Unit UMTS CDMA Bypass Mode, Pout=3.5dBm Quiescent Current – - Max. A 5 Mid Power Mode 5 A Bypass Mode 5 A Mid Power Mode 5 A Bypass Mode 5 A Bypass Control Current Bypass 5 Total Current in Power-down mode Ven=0V, Vmode=0V, Vbp=0V UMTS Adjacent Channel Leakage Ratio (ACLR) Pout ≤ (max power – MPR) Mode Control Current Adjacent Channel Power Ratio (ACPR) A 5 A 5 MHz offset -41 -36 dBc 10 MHz offset -54 -46 dBc ±1.25 MHz offset Pout ≤ max power ±1.98 MHz offset -49 -58 -44 -53 dBc dBc LTE to LTE, E-UTRAACLR Pout ≤ (maximum power – MPR) -33 dBc UTRAACLR1 Pout ≤ (maximum power – MPR) -36 dBc UTRAACLR2 Pout ≤ (maximum power – MPR) -39 dBc -35 -42 dBc dBc LTE ACLR Harmonic Suppression Second Third Input VSWR   High Power Mode, Pout=28.6dBm -41 -57 2.5:1 Stability (Spurious Output) VSWR 5:1, All phase Rx Band Noise Power (Vcc=4.2V) High Power Mode, Pout=28.6dBm -137 dBm/Hz GPS Band Noise Power (Vcc=4.2V) High Power Mode, Pout=28.6dBm -138 dBm/Hz ISM Band Noise Power (Vcc=4.2V) High Power Mode, Pout=28.6dBm -145 dBm/Hz 3 -60 dBc Electrical Characteristics for WCDMA Mode (Cont.) Rx Band Gain (2110–2170MHz) Where G is gain in Tx band G-2 dB GPS Band Gain (1574-1577MHz) Where G is gain in Tx band G-2.5 dB GLONASS Band Gain (1597-1607MHz) Where G is gain in Tx band G-1.5 dB ISM Band Gain (2400-2483.5MHz) Where G is gain in Tx band G-12 dB Media Band Gain (716-728MHz) Where G is gain in Tx band G-24 dB Phase Discontinuity low power modemid power mode, at Pout=7dBm mid power modehigh power mode, at Pout=17dBm 20 deg 30 deg Ruggedness Pout