ACPM-5004-TR1

ACPM-5004-TR1 Multimode PA - UMTS 1700MHz PA (1710-1785MHz) 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5004-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band4/9 and CDMA AWS band. The ACPM-5004-TR1 meets stringent linearity requirements up to 28.4dBm output power for UMTS Rel.99 and 28.0dBm for CDMA. The 3mmx3mm form factor package is self contained, incorporating 50ohm input and output matching networks. The PA also contains internal DC blocking capacitors for RF input and output ports. x Thin Package (0.9mm typ) The ACPM-5004-TR1 features 5th generation of CoolPAM (CoolPAM5) circuit technology which supports 3 power modes – active bypass, mid power and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low and medium power range. The active bypass feature is added to CoolPAM5 to enhance the PAE further at low output range and it enables the PA to have exceptionally low quiescent current. It dramatically saves the average power consumption and accordingly extends the talk time of mobiles and prolongs a battery life. A directional coupler is integrated into the module and both coupling and isolation ports are available externally, supporting daisy chain. The integrated coupler has excellent coupler directivity, which minimizes the coupled output power variation or delivered power variation caused by the load mismatch from the antenna. The coupler directivity, or the output power variation into the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as well as compliance tests for the system specifications. The ACPM-5004 has integrated on-chip Vref and on-module bias switch as the one of the key features of the CoolPAM-5, so an external constant voltage source is not required, eliminating the external LDO regulators and switches from circuit boards of mobile devices. It also makes the PA fully digital-controllable by the Ven pin that simply turns the PA on and off from the digital control logic input from baseband chipsets. All of the digital control input pins x Excellent Linearity x 3-mode power control with Vbp and Vmode – Bypass / Mid Power Mode / High Power Mode x High Efficiency at max output power x 10-pin surface mounting package x Internal 50ohm matching networks for both RF input and output x Integrated coupler – Coupler and Isolation ports for daisy chain x Lead-free, RoHS compliant, Green Applications x UMTS (WCDMA, HSDPA, HSUPA, HSPA+) x LTE x CDMA Ordering Information Part Number Number of Devices Container ACPM-5004-TR1 1000 178mm (7”) Tape/Reel ACPM-5004-BLK 100 Bulk Description (Cont.) such as the Ven, Vmode and Vbp are fully CMOS compatible and can operate down to the 1.35V logic. The current consumption by digital control pins is negligible. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage. Description Min. RF Input Power (Pin) Typ. Max. Unit 0 10 dBm DC Supply Voltage (Vcc1, Vcc2) 0 3.4 5.0 V Enable Voltage (Ven) 0 2.6 3.3 V Mode Control Voltage (Vmode) 0 2.6 3.3 V Bypass Control (Vbp) 0 2.6 3.3 V Storage Temperature (Tstg) -55 25 +125 °C Description Min. Typ. Max. Unit DC Supply Voltage (Vcc1, Vcc2) 3.2 3.4 4.2 V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V 1785 MHz 85 85 °C °C Recommended Operating Condition Enable Voltage (Ven) Mode Control Voltage (Vmode) Bypass Control Voltage (Vbp) Operating Frequency (fo) 1710 Ambient Temperature (Ta) UMTS CDMA -20 -30 25 25 Operating Logic Table Power Mode Ven Vmode Vbp Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode High Low X ~ 28.6 dBm ~ 27.6 dBm Mid Power Mode High High Low ~ 17 dBm ~ 16 dBm Bypass Mode High High High ~ 7 dBm ~ 6 dBm Shut Down Mode Low Low Low – – 2 Electrical Characteristics for WCDMA Mode – Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm – Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise. Characteristics Condition Min. Typ. Max. Unit Operating Frequency Range Maximum Output Power (High Power Mode)   Rel99 HSDPA, HSUPA MPR=0dB CDMA2000 RC1 High Power Mode, Pout=28.6dBm Mid Power Mode, Pout=17dBm Bypass Mode, Pout=7dBm High Power Mode, Pout=28.6dBm Mid Power Mode, Pout=17dBm Bypass Mode, Pout=7dBm High Power Mode, Pout=28.6dBm Mid Power Mode, Pout=17dBm Mid Power Mode, Pout=13.5dBm Bypass Mode, Pout=7dBm Bypass Mode, Pout=3.5dBm High Power Mode Mid Power Mode Bypass Mode High Power Mode Mid Power Mode Bypass Mode Mid Power Mode Bypass Mode Bypass Ven=0V, Vmode=0V, Vbp=0V Pout ≤ (max power – MPR) 1710 28.6 27.6 28 24.5 14 8 36.7 15.3 6.9 – 1785 5 MHz dBm dBm dBm dB dB dB % % % mA mA mA mA mA mA mA mA PA PA PA PA PA PA PA -41 -36 dBc -54 -46 -33 dBc dBc -36 dBc -39 dBc -44 -53 -35 -42 2.5:1 -60 dBc dBc dBc dBc Gain Power Added Efficiency Total Supply Current Quiescent Current Enable Current Mode Control Current Bypass Control Current Total Current in Power-down mode UMTS Adjacent Channel 5 MHz offset Leakage Ratio (ACLR) 10 MHz offset LTE ACLR 85 10 1 26.5 18 12 40.1 20.1 12.6 530 72 50 11 8.5 117 20 3.1 5 5 5 5 5 5 LTE to LTE, E-UTRAACLR Pout ≤ (maximum power – MPR) UTRAACLR1 Pout ≤ (maximum power – MPR) UTRAACLR2 Pout ≤ (maximum power – MPR) Adjacent Channel ±1.25 MHz offset Pout ≤ max power Power Ratio (ACPR) ±1.98 MHz offset Harmonic Second High Power Mode, Pout=28.6dBm Suppression Third Input VSWR   Stability (Spurious Output) VSWR 5:1, All phase Rx band Noise Power High Power Mode, Pout=28.6dBm (B4, 2110-2170MHz, Vcc=4.2V) Rx band Noise Power High Power Mode, Pout=28.6dBm (B9, 1840-1879.9MHz, Vcc=4.2V) Rx band Noise Power High Power Mode, Pout=28.6dBm (B3, 1805-1879.9MHz, Vcc=4.2V) Where G is gain in Tx band Rx band gain (B4, 2110-2174MHz) Rx band gain (B9, 1840-1879.9MHz Hz) Where G is gain in Tx band GPS Band Noise Power High Power Mode, Pout=28.6dBm (1574-1577MHz, Vcc=4.2V) Continued on next page... 3 -52 -61 -40 -62 580 95 20 150 30 5 -142 dBc dBm/Hz -135.5 dBm/Hz -135.5 dBm/Hz G-6 G-1 -135.5 dB dB dBm/Hz Electrical Characteristics for WCDMA Mode (continued) GPS Band Gain GLONASS band gain ISM band Noise Power (2400-2483.5MHz, Vcc=4.2V) ISM Band Gain Media band gain (716-728MHz) PCS Rx band gain (1930-1990MHz) Phase Discontinuity Ruggedness Coupling factor Daisy Chain Insertion Loss Where G is gain in Tx band Where G is gain in Tx band High Power Mode, Pout=28.6dBm G-2 G-1 -150 dB dB dBm/Hz Where G is gain in Tx band Where G is gain in Tx band Where G is gain in Tx band low power mode to mid power mode, at Pout=7dBm mid power modeWRhigh power mode, at Pout=17dBm Pout