ACPM-5008-SC2

ACPM-5008-TR1 UMTS Band8 (880-915MHz) 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output power for UMTS Rel.99. The 3mmx3mm form factor package is self contained, incorporating 50ohm input and output matching networks. The PA also contains internal DC blocking capacitors for RF input and output ports.  Thin Package (0.9mm typ) The ACPM-5008-TR1 features 5th generation of CoolPAM (CoolPAM5) circuit technology which supports 3 power modes – active bypass, mid power and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low and medium power range. The active bypass feature is added to CoolPAM5 to enhance the PAE further at low output range and it enables the PA to have exceptionally low quiescent current. It dramatically saves the average power consumption and accordingly extends the talk time of mobiles and prolongs a battery life. A directional coupler is integrated into the module and both coupling and isolation ports are available externally, supporting daisy chain. The integrated coupler has excellent coupler directivity, which minimizes the coupled output power variation or delivered power variation caused by the load mismatch from the antenna. The coupler directivity, or the output power variation into the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as well as compliance tests for the system specifications. The ACPM-5008 has integrated on-chip Vref and on-module bias switch as the one of the key features of the CoolPAM-5, so an external constant voltage source is not required, eliminating the external LDO regulators and switches from circuit boards of mobile devices. It also makes the PA fully digital-controllable by the Ven pin that simply turns the PA on and off from the digital control logic input from  Excellent Linearity  3-mode power control with Vbp and Vmode – Bypass / Mid Power Mode / High Power Mode  High Efficiency at max output power  10-pin surface mounting package  Internal 50ohm matching networks for both RF input and output  Integrated coupler – Coupler and Isolation ports for daisy chain  Lead-free, RoHS compliant, Green Applications  UMTS (WCDMA, HSDPA, HSUPA, HSPA+)  LTE Ordering Information Part Number Number of Devices Container ACPM-5008-TR1 1000 178mm (7”) Tape/Reel ACPM-5008-BLK 100 Bulk Description (Cont.) baseband chipsets. All of the digital control input pins such as the Ven, Vmode and Vbp are fully CMOS compatible and can operate down to the 1.35V logic. The current consumption by digital control pins is negligible. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage. Description Min. RF Input Power (Pin) Typ. Max. Unit 0 10 dBm DC Supply Voltage (Vcc1, Vcc2) 0 3.4 5.0 V Enable Voltage (Ven) 0 2.6 3.3 V Mode Control Voltage (Vmode) 0 2.6 3.3 V Bypass Control (Vbp) 0 2.6 3.3 V Storage Temperature (Tstg) -55 25 +125 °C Description Min. Typ. Max. Unit DC Supply Voltage (Vcc1, Vcc2) 3.2 3.4 4.2 V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V 915 MHz 85 °C Recommended Operating Condition Enable Voltage (Ven) Mode Control Voltage (Vmode) Bypass Control Voltage (Vbp) Operating Frequency (fo) 880 Ambient Temperature (Ta) -20 25 Operating Logic Table Power Mode Ven Vmode Vbp Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode High Low X ~ 28.5 dBm ~ 27.5 dBm Mid Power Mode High High Low ~ 17 dBm ~ 16 dBm Bypass Mode High High High ~ 7.5 dBm ~ 6.5 dBm Shut Down Mode Low Low Low – – 2 Electrical Characteristics for WCDMA Mode – Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm – Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise. Characteristics Condition Min. Typ. Max. Unit Operating Frequency Range Maximum Output Power (High Power Mode)   Rel99 HSDPA, HSUPA MPR=0dB High Power Mode, Pout=28.5dBm Mid Power Mode, Pout=17dBm Bypass Mode, Pout=7dBm High Power Mode, Pout=28.5dBm Mid Power Mode, Pout=17dBm Bypass Mode, Pout=7dBm High Power Mode, Pout=28.5dBm Mid Power Mode, Pout=17dBm Bypass Mode, Pout13.5dBm Bypass Mode, Pout=7dBm Bypass Mode, Pout=3.5dBm High Power Mode Mid Power Mode Bypass Mode High Power Mode Mid Power Mode Bypass Mode Mid Power Mode Bypass Mode Bypass Ven=0V, Vmode=0V, Vbp=0V Pout ≤ (max power – MPR) 880 28.5 27.5 24.5 14 8 36.5 16.1 6.8 – 915 5 -36 -46 -58 MHz dBm dBm dB dB dB % % % mA mA mA mA mA mA mA mA A A A A A A A dBc dBc dBc -33 dBc -36 dBc -39 dBc -35 -42 2.5:1 -60 dBc dBc Gain Power Added Efficiency Total Supply Current Quiescent Current Enable Current Mode Control Current Bypass Control Current Total Current in Power-down mode UMTS Adjacent 5 MHz offset Channel 10 MHz offset Leakage Ratio 14.8MHz offset (ACLR) LTE ACLR Harmonic Second Suppression Third Input VSWR   Stability (Spurious Output) Rx Band Noise Power (Vcc=4.2V) GPS Band Noise Power (Vcc=4.2V) ISM Band Noise Power (Vcc=4.2V) Rx Band Gain (925-960MHz) GPS Band Gain (1574-1577MHz) GLONASS Band Gain (1597-1607MHz) ISM Band Gain (2400-2483.5MHz) Media Band Gain (716-728MHz) Continued on next page... 3 LTE to LTE, E-UTRAACLR Pout ≤ (maximum power – MPR) UTRAACLR1 Pout ≤ (maximum power – MPR) UTRAACLR2 Pout ≤ (maximum power – MPR) High Power Mode, Pout=28.5dBm VSWR 5:1, All phase High Power Mode, Pout=28.5dBm High Power Mode, Pout=28.5dBm High Power Mode, Pout=28.5dBm Where G is gain in Tx band Where G is gain in Tx band Where G is gain in Tx band Where G is gain in Tx band Where G is gain in Tx band 90 10 1 28 18 11 40 20.7 12.3 520 70 50 11 8.5 123 19 3.1 5 5 5 5 5 5 -42 -57 -66 -43 -66 -136.5 -150 -158 G-1 G-28 G-30 G-65 G-1.5 570 90 20 155 30 5 dBc dBm/Hz dBm/Hz dBm/Hz dB dB dB dB dB Electrical Characteristics for WCDMA Mode (Cont.) low power modemid power mode, at Pout=7dBm mid power modehigh power mode, at Pout=17dBm Pout