ACPM-5802-TR1

ACPM-5202 UMTS Band2 (1850-1910MHz) 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The ACPM-5202 meets stringent UMTS linearity requirements up to 28dBm output power (Rel99). The 3mmx3mm form factor package is self contained, incorporating 50ohm input and output matching networks. The PA also contains internal DC blocking capacitors for RF input and output ports.  Thin Package (1.0mm typ) The ACPM-5202 features 5th generation of CoolPAM (CoolPAM5) circuit technology which supports 3 power modes – active bypass, mid power and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low and medium power range. The active bypass feature is added to CoolPAM5 to enhance the PAE further at low output range and it enables the PA to have exceptionally low quiescent current. It dramatically saves the average power consumption and accordingly extends the talk time of mobiles and prolongs a battery life.  Excellent Linearity  3-mode power control with Vbp and Vmode – Bypass / Mid Power Mode / High Power Mode  High Efficiency at max output power  10-pin surface mounting package  Internal 50ohm matching networks for both RF input and output  Integrated coupler – Coupler and Isolation ports for daisy chain  Green (Lead-free and RoHS compliant) Applications  UMTS Band2 Ordering Information Part Number Number of Devices Container ACPM-5202-TR1 1000 178mm (7”) Tape/Reel ACPM-5202-BLK 100 Bulk A directional coupler is integrated into the module and both coupling and isolation ports are available externally, supporting daisy chain. The integrated coupler has excellent coupler directivity, which minimizes the coupled output power variation or delivered power variation caused by the load mismatch from the antenna. The coupler directivity, or the output power variation into the mismatched load, is critical to the TRP and SAR performance of the mobile phones in real field operations as well as compliance tests for the system specifications. Description (Cont.) The ACPM-5202 has integrated on-chip Vref and on-module bias switch as the one of the key features of the CoolPAM5, so an external constant voltage source is not required, eliminating the external LDO regulators and switches from circuit boards of mobile devices. It also makes the PA fully digital-controllable by the Ven pin that simply turns The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. the PA on and off from the digital control logic input from baseband chipsets. All of the digital control input pins such as the Ven, Vmode and Vbp are fully CMOS compatible and can operate down to the 1.35V logic. The current consumption by digital control pins is negligible. Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage. Description Max. Unit RF Input Power (Pin) Min. Typ. 5 dBm RF Output Power (Pout) High power mode Mid power mode Bypass mode 29.5 19 13 dBm DC Supply Voltage (Vcc1, Vcc2) 0 3.4 5.0 V Enable Voltage (Ven) 0 2.6 3.3 V Mode Control Voltage (Vmode) 0 2.6 3.3 V Bypass Control (Vbp) 0 2.6 3.3 V Storage Temperature (Tstg) -55 25 +125 °C Description Min. Typ. Max. Unit DC Supply Voltage (Vcc1, Vcc2) 3.2 3.4 4.2 V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V Low High 0 1.35 0 2.6 0.5 3.1 V V 1910 MHz 85 °C Recommended Operating Condition Enable Voltage (Ven) Mode Control Voltage (Vmode) Bypass Control Voltage (Vbp) Operating Frequency (fo) 1850 Ambient Temperature (Ta) -20 25 Operating Logic Table Power Mode Ven Vmode Vbp Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode High Low Low ~ 28 dBm ~ 27 dBm Mid Power Mode High High Low ~ 18 dBm ~ 17 dBm Bypass Mode High High High ~ 12 dBm ~ 11 dBm Shut Down Mode Low Low Low – – 2 Electrical Characteristics for WCDMA Mode – Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm – Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise. Characteristics Condition Operating Frequency Range Gain   High Power Mode, Pout=28dBm Mid Power Mode, Pout=18dBm Power Added Efficiency Total Supply Current Min. Typ. Max. 1850 – 1910 24.5 28.5 dB 16 19.5 dB Bypass Mode, Pout=12dBm 10 13.5 dB High Power Mode, Pout=28dBm 34.7 39 % Enable Current Mode Control Current MHz Mid Power Mode, Pout=18dBm 15.6 22.1 % Bypass Mode, Pout=12dBm 11.8 19.6 % High Power Mode, Pout=28dBm 474 534 mA Mid Power Mode, Pout=18dBm 83 118 mA 23 38 mA 112 150 mA Bypass Mode, Pout=12dBm Quiescent Current Unit High Power Mode 80 Mid Power Mode 10 21 39 mA Bypass Mode 1 3.3 5.5 mA 10 A Mid Power Mode 10 A Bypass Mode 10 A High Power Mode Mid Power Mode 5 A Bypass Mode 5 A 5 Bypass Control Current Bypass Total Current in Power-down mode 5 MHz offset Adjacent Channel 10 MHz offset Leakage Ratio 5 MHz offset 10 MHz offset 5 MHz offset 10 MHz offset 5 MHz offset 10 MHz offset 5 MHz offset 10 MHz offset 5 MHz offset 10 MHz offset Harmonic Second Suppression Third Input VSWR Ven=0V, Vmode=0V, Vbp=0V High Power Mode, Pout=28dBm VSWR 5:1, All phase Stability (Spurious Output) High Power Mode, Pout=28dBm -42 -54 -40 -52 -43 -60 -41 -58 -44 -57 -42 -55 -38 -48 2.5:1 High Power Mode, Pout=27dBm (HSDPA, HSUPA MPR=0dB) Mid Power Mode, Pout=18dBm Mid Power Mode, Pout=17dBm (HSDPA, HSUPA MPR=0dB) Bypass Mode, Pout=12dBm Bypass Mode, Pout=11dBm (HSDPA, HSUPA MPR=0dB) High Power Mode, Pout=28dBm A 5 -36 -46 -35 -46 -36 -46 -36 -46 -36 -46 -36 -46 -35 -42 A dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc -60 dBc Rx Band Noise Power (Vcc=4.2V) High Power Mode, Pout=28dBm -135 dBm/Hz GPS Band Noise Power (Vcc=4.2V) High Power Mode, Pout=28dBm -138 dBm/Hz ISM Band Noise Power (Vcc=4.2V) Phase Discontinuity -143 5 25 3 25 Coupling factor High Power Mode, Pout=28dBm bypass modemid power mode, at Pout=12dBm mid power modehigh power mode, at Pout=18dBm Pout