ACPM-7372
UMTS Band8 (880-915MHz) 4x4 Power Amplifier Module
Data Sheet
Description
Features
The ACPM-7372 is a fully matched 10-pin surface mount
module developed for UMTS EGSM. This power amplifier
module operates in the 880-915MHz bandwidth. The
ACPM-7372 meets stringent UMTS linearity requirements
up to 28.75dBm output power. The 4mmx4mm form factor
package is self contained, incorporating 50ohm input and
output matching networks.
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Thin Package (0.9mm typ)
The ACPM-7372 features 5th generation of CoolPAM circuit
technology which supports 3 power modes – bypass, mid
and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low
and medium power range. Active bypass feature is added
to 5th generation to enhance PAE further at low output
range. This helps to extend talk time.
The power amplifier is manufactured on an advanced
InGaP HBT (hetero-junction Bipolar Transistor) MMIC
(microwave monolithic integrated circuit) technology
offering state-of-the-art reliability, temperature stability
and ruggedness.
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Excellent ����������
Linearity
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3-mode power control with ��������
Vbp and �����
Vmode
– Bypass / Mid Power Mode / High Power Mode
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High Efficiency at max output power
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10-pin surface mounting package
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Internal 50ohm matching networks for both ���
RF ������
input
and output
• Lead-free, RoHS compliant, Green
Applications
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UMTS Band8
Ordering Information�
Part Number
Number of Devices Container
ACPM-7372-TR1
1,000
178mm (7”) Tape/Reel
ACPM-7372-BLK
100
BULK
Block Diagram
Ven(1)
Vcc1(5)
Bias Circuit & Control Logic
Vmode(2)
Vbp(3)
Vcc2(6)
RF In(4)
Inter-Stage
Match
Input Match &
Power Divider
Bypass
Circuit
Output
Match
Impedence
Transformer
RF Out(8)
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters�������������������������������
set
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at or below nominal value.
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage.
Description
Min.
RF Input Power (Pin)
Typ.
Max.
Unit
0
10*
dBm
DC Supply Voltage (Vcc1, Vcc2)
0
3.4
5.0
V
Enable Voltage (Ven)
0
2.6
3.3
V
Mode Control Voltage (Vmode)
0
2.6
3.3
V
Bypass Control (Vbp)
0
2.6
3.3
V
Storage Temperature (Tstg)
-55
25
+125
°C
* High Power Mode (5dBm for Bypass and Mid Power Mode)
Recommended Operating Condition
Description
Min.
Typ.
Max.
Unit
DC Supply Voltage (Vcc1, Vcc2)
3.2
3.4
4.2
V
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
Low
High
0
1.35
0
2.6
0.5
3.1
V
V
915
MHz
85
°C
Enable Voltage (Ven)
Mode Control Voltage (Vmode)
Bypass Control Voltage (Vbp)
Operating Frequency (fo)
880
Ambient Temperature (Ta)
-20
25
Operating Logic Table
Power Mode
Ven
Vmode
Vbp
Pout (Rel99)
Pout (HSDPA, HSUPA MPR=0dB)
High Power Mode
High
Low
Low
~ 28.5 dBm
~ 27.5 dBm
Mid Power Mode
High
High
Low
~ 17 dBm
~ 16 dBm
Bypass Mode
High
High
High
~ 8 dBm
~ 7 dBm
Shut Down Mode
Low
Low
Low
–
–
Electrical Characteristics for WCDMA Mode
– Conditions: Vcc = 3.4V, Ven = 2.6V������������
, ����������
T = 25°C, ����������������
Zin/Zout = 50ohm
– Signal Configuration:����������������������������������������������������������
3GPP (���������������������������������������������������
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DPCCH + 1DPDCH�������������������������������������
)������������������������������������
Up-Link
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unless specified otherwise.
Characteristics
Condition
Min.
Typ.
Max.
Unit
Operating Frequency Range
880
–
915
MHz
Gain
High Power Mode, Pout=28.5dBm
24
27
dB
Mid Power Mode, Pout=17dBm
13
17
dB
Bypass Mode, Pout=8dBm
8
12
16
dB
GPS Band Gain relative to Tx Gain, HPM
Ggps@Pin=-15dBm – Gtx@Pout=28.5dBm
-24
-3
dB
Rx Band Gain relative to Tx Gain, HPM
Grx@Pin=-15dBm – Gtx@Pout=28.5dBm
-0.9
-0.5
dB
ISM Band Gain relative to Tx Gain, HPM
Gism@Pin=-15dBm – Gtx@Pout=28.5dBm
-68
-6
dB
Power Added Efficiency
High Power Mode, Pout=28.5dBm
32.7
37.1
%
Mid Power Mode, Pout=17dBm
14.4
19.3
%
Bypass Mode, Pout=8dBm
8.7
12.4
%
Total Supply Current
Quiescent Current
High Power Mode, Pout=28.5dBm
560
635
mA
Mid Power Mode, Pout=17dBm
75
100
mA
Bypass Mode, Pout=8dBm
14
20
mA
High Power Mode
70
90
110
mA
Mid Power Mode
10
20
30
mA
Bypass Mode
2.3
3.3
4.3
mA
High Power Mode
10
25
µA
Mid Power Mode
10
25
µA
Bypass Mode
10
25
µA
Mid Power Mode
5
25
µA
Bypass Mode
5
25
µA
Bypass Control Current
Bypass
5
25
µA
Total Current in Power-down mode
Ven=0V, Vmode=0V, Vbp=0V
5
µA
Adjacent Channel
Leakage Ratio
5 MHz offset
10 MHz offset
High Power Mode, Pout=28.5dBm
-42
-55
-37
-47
dBc
dBc
5 MHz offset
10 MHz offset
High Power Mode, Pout=27.5dBm
(HSDPA, HSUPA MPR=0dB)
-39
-55
-36
-47
dBc
dBc
5 MHz offset
10 MHz offset
Mid Power Mode, Pout=17dBm
-44
-60
-37
-47
dBc
dBc
5 MHz offset
10 MHz offset
Mid Power Mode, Pout=16dBm
(HSDPA, HSUPA MPR=0dB)
-42
-57
-37
-47
dBc
dBc
5 MHz offset
10 MHz offset
Bypass Mode, Pout=8dBm
-43
-57
-37
-47
dBc
dBc
5 MHz offset
10 MHz offset
Bypass Mode, Pout=7dBm
(HSDPA, HSUPA MPR=0dB)
-42
-55
-37
-47
dBc
dBc
Enable Current
Mode Control Current
Electrical Characteristics for WCDMA Mode
– Conditions: Vcc = 3.4V, Ven = 2.6V������������
, ����������
T = 25°C, ����������������
Zin/Zout = 50ohm
– Signal Configuration:����������������������������������������������������������
3GPP (���������������������������������������������������
����������������������������������������������������
DPCCH + 1DPDCH�������������������������������������
)������������������������������������
Up-Link
�����������������������������������
unless specified otherwise.
Characteristics
Condition
Harmonic Suppression
Second
Third
Gain at Harmonics
Second and Third
High Power Mode, Pout=28.5dBm
Input VSWR
Stability (Spurious Output)
Load VSWR 5:1, All phase
Rx Band Noise Power (Vcc=4.2V)
High Power Mode, Pout=28.5dBm
GPS Band Noise (Vcc=4.2V)
Min.
Typ.
Max.
Unit
-45
-60
-35
-40
dBc
dBc
0
dB
1.3
2.5:1
-60
dBc
-135.5
-134
dBm/Hz
High Power Mode, Pout=28.5dBm
-152
-140
dBm/Hz
ISM Band Noise (Vcc=4.2V)
High Power Mode, Pout=28.5dBm
-159
-144
Phase Discontinuity
HPM↔MPM, Pout=17dBm
MPM↔BPM, Pout=8dBm
10
20
45
45
deg
deg
Ruggedness
Pout
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