ACPM-7382-TR1

ACPM-7382 UMTS Band1 (1920-1980MHz) 4x4 Power Amplifier Module Data Sheet Description Features The ACPM-7382 is a fully matched 10-pin surface mount module developed for UMTS Band1. This power amplifier module operates in the 1920-1980MHz bandwidth. The ACPM-7382 meets stringent UMTS linearity requirements up to 28.25dBm output power. The 4mmx4mm form factor package is self contained, incorporating 50ohm input and output matching networks • Thin Package (0.9mm typ) The ACPM-7382 features 5th generation of CoolPAM circuit technology which supports 3 power modes – bypass, mid and high power modes. The CoolPAM is stage bypass technology enhancing PAE (power added efficiency) at low and medium power range. Active bypass feature is added to 5th generation to enhance PAE further at low output range. This helps to extend talk time. • Internal 50ohm matching networks for both RF input and output The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. Ordering Information Block Diagram • Excellent Linearity • 3-mode power control with Vbp and Vmode Bypass / Mid Power Mode / High Power Mode • High Efficiency at max output power • 10-pin surface mounting package • Lead-free, RoHS compliant, Green Applications • UMTS Band1 Part Number Number of Devices Container ACPM-7382-TR1 1,000 178mm (7”) Tape/Reel ACPM-7382-BLK 100 BULK Absolute Maximum Ratings No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal values may result in permanent damage Description Min. RF Input Power (Pin) Typ. Max. Unit 0 10 * dBm DC Supply Voltage (Vcc1, Vcc2) 0 3.4 5.0 V Enable Voltage (Ven) 0 2.6 3.3 V Mode Control Voltage (Vmode) 0 2.6 3.3 V Bypass Control (Vbp) 0 2.6 3.3 V Storage Temperature (Tstg) -55 25 +125 °C * High Power Mode (5dBm for Bypass and Mid Power Mode) Recommended Operating Condition Description Min. Typ. Max. Unit DC Supply Voltage (Vcc1, Vcc2) 3.2 3.4 4.2 V Enable Voltage (Ven) Low High 0 1.35 0 2.6 0.5 3.1 V V Mode Control Voltage (Vmode) Low High 0 1.35 0 2.6 0.5 3.1 V V Bypass Control Voltage (Vbp) Low High 0 1.35 0 2.6 0.5 3.1 V V Operating Frequency (fo) 1920 1980 MHz Ambient Temperature (Ta) -20 85 °C 25 Operating Logic Table Power Mode Ven Vmode Vbp Pout (Rel99) Pout (HSDPA, HSUPA MPR=0dB) High Power Mode High Low Low ~ 28.25 dBm ~ 27.25 dBm Mid Power Mode High High Low ~ 17 dBm ~ 16 dBm Bypass Mode High High High ~ 8 dBm ~ 7 dBm Shut Down Mode Low Low Low - -  Electrical Characteristics for WCDMA Mode - Conditions: Vcc=3.4V, Ven=2.6V, T=25°, Zin/Zout=50ohm - Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise. Characteristics Condition Min. Operating Frequency Range Gain Typ. Max. Unit 1980 MHz 1920 – High Power Mode, Pout=28.25dBm 24 27 Mid Power Mode, Pout=17dBm 16 22 Bypass Mode, Pout=8dBm 8 11.5 16 dB dB dB GPS Band Gain relative to Tx Gain, HPM Ggps@Pin=-15dBm – Gtx@Pout=28.25dBm -3.8 -1 dB Rx Band Gain relative to Tx Gain, HPM Grx@Pin=-15dBm – Gtx@Pout=28.25dBm -3.9 -1 dB ISM Band Gain relative to Tx Gain, HPM Gism@Pin=-15dBm – Gtx@Pout=28.25dBm -13.1 -4 dB Power Added Efficiency High Power Mode, Pout=28.25dBm 37.0 40.9 % Mid Power Mode, Pout=17dBm 14.6 19.8 % Bypass Mode, Pout=8dBm 8.6 13.3 Total Supply Current Quiescent Current Enable Current Mode Control Current % High Power Mode, Pout=28.25dBm 480 530 mA Mid Power Mode, Pout=17dBm 74 100 mA Bypass Mode, Pout=8dBm 13 20 mA High Power Mode 75 100 125 mA Mid Power Mode 15 25 35 mA Bypass Mode 2 3 4 mA High Power Mode 10 25 µA Mid Power Mode 10 25 µA Bypass Mode 10 25 µA Mid Power Mode 5 25 µA Bypass Mode 5 25 µA Bypass Control Current Bypass 5 25 µA Total Current in Power-down mode Ven=0V, Vmode=0V, Vbp=0V 5 µA Adjacent Channel Leakage Ratio 5 MHz offset 10 MHz offset High Power Mode, Pout=28.25dBm -42 -53 -36 -46 dBc dBc 5 MHz offset 10 MHz offset High Power Mode, Pout=27.25dBm (HSDPA, HSUPA MPR=0dB) -39 -52 -36 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=17dBm -49 -64 -36 -46 dBc dBc 5 MHz offset 10 MHz offset Mid Power Mode, Pout=16dBm (HSDPA, HSUPA MPR=0dB) -48 -63 -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=8dBm -42 -54 -36 -46 dBc dBc 5 MHz offset 10 MHz offset Bypass Mode, Pout=7dBm (HSDPA, HSUPA MPR=0dB) -41 -52 -36 -46 dBc dBc  Electrical Characteristics for WCDMA Mode (Cont.) Characteristics Condition Harmonic Suppression Second Third Gain at Harmonics Second and Third Min. High Power Mode, Pout=28.25dBm Input VSWR 1.7 Stability (Spurious Output) Load VSWR 5:1, All phase Noise Power in Rx Band (Vcc=4.2V) High Power Mode, Pout=28.25dBm GPS Band Noise (Vcc=4.2V) Typ. Max. Unit -42 -63 -35 -40 dBc dBc 0 dB 2.5:1 -60 dBc -139 -137 dBm/Hz High Power Mode, Pout=28.25dBm -140 -138 dBm/Hz ISM Band Noise (Vcc=4.2V) High Power Mode, Pout=28.25dBm -146 -143 dBm/Hz Phase Discontinuity HPMMPM, Pout=17dBm MPMBPM, Pout=8dBm 10 8 45 45 deg deg Ruggedness Pout