AFBR-S4N33C013

Data Sheet AFBR-S4N33C013 NUV-HD Single Silicon Photo Multiplier Description The Broadcom® AFBR-S4N33C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons. The active area is 3.0 × 3.0 mm2. High packing density of the single chips is achieved using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum. The AFBR-S4N33C013 SiPM is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This product is lead free and compliant with RoHS. Block Diagram Features            Applications     Figure 1: AFBR- S4N33C013 Block Diagram        Broadcom High PDE of more than 54% at 420 nm Chip-sized package (CSP) Excellent SPTR and CRT Excellent uniformity of breakdown voltage, 180 mV (3 sigma) Excellent uniformity of gain With TSV technology (4-side tilable), with high fill factors Size 3.14 × 3.14 mm2 Cell pitch 30 × 30 µm2 Highly transparent glass protection layer Operating temperature range from –40°C to +85°C RoHS and REACH compliant X-ray and gamma ray detection Gamma ray spectroscopy Safety and security Nuclear medicine Positron emission tomography Life sciences Flow cytometry Fluorescence – luminescence measurements Time correlated single photon counting High energy physics Astrophysics AFBR-S4N33C013-DS102 February 12, 2020 AFBR-S4N33C013 Data Sheet NUV-HD Single Silicon Photo Multiplier Pad Layout and Soldering Ball Geometry Figure 2: Redistribution Layer, Pad Layout, and Soldering Ball Geometry 3.14 0.57 RDL surface 1 1 Pin 1 0.59 0.57 0.3 1 C_1 A_2 A_1 1 3.14 A C_2 Sensor surface A Glass surface RDL back side view R_2 0.36 R_1 Side view Pad layout b ack side view All dimensions are in millimeters. A stands for anode, C stands for cathode. All cathode balls (C_1 to C_2) are connected together. All anodes (A_1 to A_2) are connected together. R_1 and R_2 are connected together. Unlabeled balls and R_1 - R_2 are floating, preferred electrical connection to cathode voltage. Reflow Soldering Diagram Figure 3: Recommended Reflow Soldering Profile [°C] 300 max 245 °C 250 217 °C liquidus q 200 150 soak pre-heat reflow 100 50 90...120s < 1 K/s 0 0 Broadcom 50 100 150 200 250 300 350 400 [s] AFBR-S4N33C013-DS102 2 AFBR-S4N33C013 Data Sheet NUV-HD Single Silicon Photo Multiplier Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause damage to the devices. Limits apply to each parameter in isolation. Absolute maximum ratings are those values beyond which damage to the device may occur if these limits are exceeded for other than a short period of time. Parameter Symbol Min. Max. Units TSTG –40 +85 °C TA –40 +85 °C Soldering Temperaturea, b TSOLD — 245 °C Lead Soldering Timea, b tSOLD — 60 s Electrostatic Discharge Voltage Capability HBM ESDHBM — 2 kV Electrostatic Discharge Voltage Capability CDM ESDCDM — 500 V VOV —- 10 V Storage Temperature Operating Temperature Operating Over Voltage a. The AFBR-S4N33C013 is reflow-solderable according to solder diagram as shown in Figure 3. b. According to JEDEC J-STD-020D, the moisture sensitivity classification is MSL3. Broadcom AFBR-S4N33C013-DS102 3 AFBR-S4N33C013 Data Sheet NUV-HD Single Silicon Photo Multiplier Device Specification Features measured at 25°C unless otherwise specified. Geometric Features Parameter Symbol Value Units Device area DA 3.14 × 3.14 mm2 Active area AA 3.0 × 3.0 mm2 Micro cell pitch Lcell 30 µm Number of micro cells Ncells 9815 — FF 76 % Micro cell fill factor Optical and Electrical Features Two recommended working points: "Typical" for general-purpose applications and "Performance" for best timing performance. Parameter Symbol Min. Typ. Max. Units Reference Plots  300 — 900 nm Peak sensitivity wavelength PK — 420 — nm Figure 4 Breakdown voltage Vbd — 26.9 — V Figure 6 VBR/T — 26 — mV/K Symbol Typ.a Perf.a Units PDE 43 54 % Figure 5 ID 0.3 2.3 µA Figure 6 DCR 1.0 2.3 Mcps DCRmm² 111 255 kcps/mm2 G 1.6 3.2 × 106 PXtalk 11 34 % Figure 9 After pulsing probability PAP