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ALM-1522-TR2G

ALM-1522-TR2G

  • 厂商:

    AVAGO(博通)

  • 封装:

    SMD22

  • 描述:

    IC AMP LNA 900MHZ 22MCOB

  • 数据手册
  • 价格&库存
ALM-1522-TR2G 数据手册
ALM-1522 700 – 1100 MHz Low Noise, High Gain, High Linearity Balanced Amplifier Module Data Sheet Description Features Avago Technologies’ ALM-1522 is a low noise, high gain and high linearity balanced amplifier module operating in the 700MHz to 1100MHz frequency range. The exceptional noise and linearity performance are achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. • Low noise figure The ALM – 1522 is housed in a miniature 5.0 x 6.0 x 1.1 mm3 22-lead multiple-chips-on-board (MCOB) module package. The compact footprint and low profile makes the ALM-1522 an ideal choice for Wireless Infrastructure Basestation Tower-Mounted-Amplifiers (TMA), Radiocard Receivers, Multi-Carrier Driver Amplifiers for GSM, CDMA, W-CDMA, TD-SCDMA base stations operating in the 700MHz to 1100MHz band. • Shutdown function Component Image • Can be used in single-ended or balanced configuration Surface Mount MCOB 5.0 x 6.0 x 1.1mm3 22-lead Top View • 5V supply • Adjustable current for optimum NF or OIP3 • High gain : 31dB • GaAs E-pHEMT Technology • Miniature package size : 5.0 x 6.0 x 1.1 mm3 • Tape-And-Reel packaging option available • MSL-3 and Lead-free • Meets ESD 100V Machine Model per EIA/JESD22-A115, and 500V Human Body Model per EIA/JESD22-A114 • Unconditionally stable • Green/RoHS Compliant Note: Package marking provides orientation and identification. “1522” = Device Part Number “WWYY” = Work week and year of manufacture “XXXX” = Assembly lot number 1522 WWYY XXXX • High linearity and OP1dB Specifications 900 MHz; 5V, Quiescent Idd=240 mA (typ) per channel Vctrl at 2.7V • 31 dB Gain • 0.6 dB Noise figure • 27.7 dBm OP1dB • 43 dBm OIP3 • 45 dB Reverse Isolation Applications • TMA & Front End LNA for GSM, CDMA, W-CDMA, TDSCDMA base stations. • Driver amplifier for GSM, CDMA, W-CDMA, TD-SCDMA base stations. BOTTOM View Absolute Maximum Rating[1] TA=25°C Thermal resistance Thermal Resistance [3] (Vdd = 5V, Vctrl1 = Vctrl2 = 2.7V, Idd = 480mA), θjc = 16.5°C/W Symbol Parameter Units Absolute Max. Vdd Supply voltages, bias supply voltage V 5.5 Vctrl Control Voltage V 5.5 Pin,max CW RF Input Power dBm +20 Pdiss Total Power Dissipation [2] W 5.0 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Board temperature TB is 25°C. Derate 61mW/°C for TB>97°C. 3. Thermal resistance measured using Infra-Red Microscopy Technique. Product Consistency Distribution Charts[4] [5] TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, unless otherwise specified. LSL 29.5 USL Mean = 31 dB CPK = 2.0 30 USLUSL Mean = 0.6 dB CPK = 2.4 30.5 31 31.5 32 0.4 .4 32.5 Figure 1. Gain (dB) Distribution LSL 39 LSL 41 Figure 3. OIP3 (dBm) Distribution 0.6 .6 0.7 .7 0.8 .8 0.9 .9 1.01 Figure 2. NF (dB) Distribution Mean = 43 dBm CPK = 3.3 40 0.5 .5 42 43 44 Mean = 27.7 dBm CPK = 3.8 27 28 29 Figure 4. OP1dB (dBm) Distribution Note: 4. Distribution data sample size is 1700 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. Measurements are made on a production test boards, which can show a variance of up to 1dB in Gain and OIP3 compared to a soldered-down demo board. Circuit trace losses have not been de-embedded from actual measurements.  Electrical Specifications[6][9] TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, given for each of the 2 RF paths, measured on evaluation board (see Fig. 5) unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V - 5.0 - Vctrl Control Voltage V - 2.7 - Idd Quiescent Supply Current mA 180 240 280 Gain Gain dB 29.6 31 32.6 OIP3[7] Output Third Order Intercept Point dBm 39 43 - NF[8] Noise Figure dB - 0.6 1.0 OP1dB Output Power at 1dB Gain Compression dBm 26.5 27.7 - S11 Input Return Loss, 50Ω source dB - -10 - S22 Output Return Loss, 50Ω load dB - -14 - S12 Reverse Isolation dB - 45 - ISO1-2 Isolation between RF Input 1 and RF Input 2 dB - 27 - Notes: 6. Measurement at 900MHz obtained using demo board described in Figure 5. 7. 900MHz OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -20 dBm per tone. 8. Circuit trace losses have not been de-embedded from actual measurements. 9. Use proper bias, board, heatsink and derating designs to ensure maximum junction temperature is not exceeded. See absolute maximum ratings and application note for more details.  ALM-1522 Demo Board Layout 20-pin Connector Ground Pinout Designation 10 Vsupply 1 1,2 Single-Ended Demo Board Layout RF output 1 RF input 1 RF input 2 RF output 2 Figure 5. Evaluation Board Layout Diagram Recommended PCB material is 10 mils Rogers RO4350. Suggested component values may vary according to layout and PCB material. Vsupply Bias1 Vsense Demo Board Schematic Module Outline C3 C5 21 1,22 20 C1 19 17,18 Bias 50-Ohms TL 2 Input Match 50-Ohms TL Interstage Match Output Match 3,4 14,15 5 50-Ohms TL Input Match Interstage Match 6 Output Match 8 9 10 11 Bias2 Vsupply 1,2,19,20 C8 10 C6 Figure 6. Evaluation Board Schematic Diagram 13 12 Bias 7  16 C10 50-Ohms TL Circuit Symbol Size Description C1, C10 0805 2.2uF ceramic C2, C7 0402 Not used C3, C6 0402 0.1uF ceramic C4, C9 0402 Not used C5, C8 0402 0.1uF ceramic ALM-1522 Single-Ended Typical Performance Curves 300 280 260 240 220 200 180 160 140 120 100 350 300 250 Idd (mA) Idd (mA) Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 5) unless otherwise specified. 200 150 100 -40°C 25°C 85°C 50 -40 -20 0 20 40 Temperature °C 60 80 0 100 Figure 7. Idd vs. Temperature 2 2.2 2.4 2.6 Vctrl (V) 2.8 3 Figure 8. Idd vs. Vctrl and Temperature 1 35 -40°C 25°C 85°C 34 33 32 0.6 Gain (dB) NF (dB) 0.8 0.4 31 30 29 -40°C 25°C 85°C 0.2 0 700 3.2 800 900 Frequency (MHz) 1000 28 27 26 700 1100 Figure 9. NF vs. Frequency and Temperature 800 900 Frequency (MHz) 1000 1100 Figure 10. Gain vs. Frequency and Temperature 49 30 47 29 43 P1dB (dBm) OIP3 (dBm) 45 41 39 37 -40°C 25°C 85°C 35 33 700 800 900 Frequency (MHz) Figure 11. OIP3 vs. Frequency and Temperature  1000 1100 28 27 26 -40°C 25°C 85°C 25 24 700 800 900 Frequency (MHz) Figure 12. OP1dB vs. Frequency and Temperature 1000 1100 1 35 34 33 32 0.6 Gain (dB) NF (dB) 0.8 0.4 30 29 -40°C 25°C 85°C 0.2 0 31 2 2.2 2.4 2.6 Vctrl (V) 2.8 3 -40°C 25°C 85°C 28 27 26 3.2 Figure 13. NF vs. Vctrl and Temperature 2 2.2 2.4 2.6 Vctrl (V) 2.8 3 3.2 Figure 14. Gain vs. Vctrl and Temperature 49 30 47 29 43 P1dB (dBm) 41 39 37 -40°C 25°C 85°C 35 33 2 2.2 2.4 2.6 Vctrl (V) 2.8 3 26 24 3.2 -40°C 25°C 85°C 2 2.2 2.4 2.6 Vctrl (V) 2.8 3 3.2 Figure 16. OP1dB vs. Vctrl and Temperature 10 40 0 0 20 -20 0 -40 -20 -60 -10 S21 (dB) S11 (dB) & S22 (dB) 27 25 Figure 15. OIP3 vs. Vctrl and Temperature -20 -30 -50 -40 S11 S22 -40 0 500 1000 Frequency (MHz) Figure 17. S11 & S22 vs. Frequency (0.1 to 2GHz)  28 1500 2000 -60 S11 S22 0 500 1000 1500 Frequency (MHz) Figure 18. S21 & S12 vs. Frequency (0.1 to 2GHz) -80 -100 2000 S12 (dB) OIP3 (dBm) 45 0 20 -10 -20 -30 S11 S22 -40 -50 0 2 4 6 8 10 12 Frequency (GHz) 14 16 18 Figure 19. S11 & S22 vs. Frequency (0.1 to 20GHz) -20 -60 -40 -80 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 -100 0 K Mu Mu' 0 4 8 12 Frequency (GHz) Figure 21. Stability vs. Frequency (0.1 to 20GHz)  -40 Figure 20. S21 & S12 vs. Frequency (0.1 to 20GHz) 16 Ch1 Ch2 Channel Isolation (dB) -10 K, Mu, Mu' 10 9 8 7 6 5 4 3 2 1 0 -20 0 -60 20 0 S21 S12 S12 (dB) 40 S21 (dB) S11 (dB) & S22 (dB) 10 20 -20 -30 -40 -50 0 400 800 1200 Frequency (MHz) Figure 22. Channel Isolation vs. Frequency (0.1 to 2GHz) 1600 2000 Balanced Amplifier Demo Board Layout Circuit Symbol Size Description Value C1, C10 0805 Ceramic capacitor 2.2uF C3, C5, C6, C8 0402 Ceramic capacitor 0.1uF C2, C4, C7, C8 0402 Not used R1, R4 0402 Not used R2, R3 0402 Resistor Coupler 16.51mmx12.19mm Anaren Xinger II XC0900L-03S 50Ω Figure 23. Suggested Balanced Amplifier Evaluation Board Layout Diagram Recommended PCB material is 10 mils Rogers RO4350. Suggested component values may vary according to layout and PCB material. Coupler operating frequency specified from 800MHz to 1000MHz Vsupply Bias1 Vsense Balanced Demo Board Schematic Module Outline C3 Coupler C5 21 1,22 20 2 Input Match Interstage Match Output Match Input Match Interstage Match 6 Output Match 8 9 10 RF Output 11 Bias2 Vsupply 10 1,2,19,20 C8 Figure 24. Evaluation Board Schematic for Balanced Amplifier 13 12 Bias 7 C6  16 14,15 5 R3 R2 50-Ohms TL 3,4 50-Ohms TL Coupler 17,18 Bias 50-Ohms TL RF Input C1 19 C10 50-Ohms TL Balanced Amplifier Typical Performance Curves Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 23) unless otherwise specified. 35 1 34 33 32 0.6 Gain (dB) NF (dB) 0.8 0.4 31 30 29 28 0.2 27 800 900 Frequency (MHz) 1000 1000 1100 1000 1100 31 30 29 28 27 800 900 Frequency (MHz) 1000 26 1100 700 800 900 Frequency (MHz) Figure 28. Balanced mode OP1dB vs. Frequency 10 40 0 0 20 -20 0 -40 -20 -60 -10 S21 (dB) S11 (dB) & S22 (dB) 900 Frequency (MHz) 32 Figure 27. Balanced mode OIP3 vs. Frequency -20 -30 S11 S22 -40 -50 0 500 1000 Frequency (MHz) 1500 Figure 29. Balanced mode S11 & S22 vs. Frequency (0.1 to 2GHz)  800 Figure 26. Balanced mode Gain vs. Frequency P1dB (dBm) OIP3 (dBm) Figure 25. Balanced mode NF vs. Frequency 50 48 46 44 42 40 38 36 34 32 30 700 26 700 1100 2000 -40 -60 S21 S12 0 500 1000 1500 Frequency (MHz) 2000 Figure 30. Balanced mode S21 and S12 vs. Frequency (0.1 to 2GHz) S12 (dB) 0 700 -80 -100 40 20 -10 S21 (dB) S11 (dB) & S22 (dB) 0 -20 -30 -40 -50 S11 S22 0 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Figure 31. Balanced mode S11 & S22 vs. Frequency (0.1 to 6GHz) K Mu Mu' 0 1 2 3 4 Frequency (GHz) 5 Figure 33. Balanced mode Stability vs. Frequency (0.1 to 6GHz) Package Dimensions Laser Marking, POD, Stencil 1522 WWYY XXXX 10 -20 0 -40 -20 -60 -40 -80 -60 0 1000 2000 3000 4000 Frequency (MHz) 5000 -100 6000 Figure 32. Balanced mode S21 and S12 vs. Frequency (0.1 to 6GHz) K, Mu, Mu' 10 9 8 7 6 5 4 3 2 1 0 0 S21 S12 6 S12 (dB) 10 Device Orientation REEL USER FEED DIRECTION CARRIER TAPE 1522 WWYY XXXX TOP VIEW USER FEED DIRECTION COVER TAPE Tape Dimensions Part Number Ordering Information Part Number No. of Devices Container ALM-1522-BLKG 100 Antistatic bag ALM-1522-TR1G 1000 7” Reel ALM-1522-TR2G 3000 13” Reel 11 1522 WWYY XXXX END VIEW Reel Dimensions Ø178.0±1.0 FRONT BACK SEE DETAIL "X" RECYCLE LOGO FRONT VIEW 65° 7.9 - 10.9* +1.5* 8.4 -0.0 45° R10.65 R5.2 Slot hole ‘b’ BACK 60° Ø55.0±0.5 Ø178.0±1.0 FRONT Slot hole ‘a’ EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm Ø51.2±0.3 BACK VIEW For product information and a complete list of distributors, please go to our web site: 14.4* MAX. www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-1723EN - April 8, 2009
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