ALM-42216
(3.3 – 5)V Linear Wireless Data Power Amplifier
for (2.3 – 2.7)GHz Operation
Data Sheet
Description
Features
Avago Technologies’ ALM-42216 is a fully-matched Power
amplifier module for use in the (2.3-2.7)GHz band. High
linear output power at 3.3V is achieved through the use of
Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 5.0
x 5.0 x 1.1mm MCOB module. It includes shutdown and
switchable gain functions. A detector is also included onchip. The compact footprint and low profile coupled with
high gain and high efficiency make the ALM-42216 an
ideal choice as a power amplifier for IEEE 802.16 (Wimax)
and WLL applications.
• High Efficiency of 17.4% at low 3.3V supply voltage
Applications
• High linearity amplifier for IEEE 802.16 mobile and fixed
terminal amplifier
• High gain : 30dB
• High linearity performance : 23.5dBm at 2.5% EVM
(64 QAM ¾ FEC rate OFDMA).
• Broadband Fully-matched 50 Ohm input and output
impedances
• >45dBc 2nd harmonic attenuation
• Built-in detector and shutdown switches
• Switchable gain : 20 dB attenuation using one single
CMOS compatible switch pin
• GaAs E-pHEMT Technology[1]
• Low cost small package size: 5.0 x 5.0 x 1.1 mm3
• WLL amplifier
• Useable at 5V supplies for higher output power
Component Image
Specifications
5.0 x 5.0 x 1.1 mm3 MCOB
2.5GHz; 3.3V, Iqtotal=240 mA (typ)
• 30 dB Gain
• 23.5dBm linear Pout (2.5% EVM, 64QAM OFDMA)
42216
WWYY
XXXX
Top View
Pin Configuration
Notes:
Package marking provides orientation
and identification
“42216” = Device part number
“WWYY” = Work week and Year
“XXXX” = Assembly lot number
• 25.5dBm linear Pout (2.5% EVM, 64QAM OFDMA)
@ Vdd=5V
• P1dB : 30dBm
• Detector range : 10dB (0.5V – 2.5V)
• 20 dB switchable gain attenuation
• Shutdown current : < 20uA
Notes:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Top View
Absolute Maximum Rating [1] TA=25°C
Symbol
Parameter
Units
Absolute Max.
Vdd, Vddbias
Supply voltages, bias supply voltage
V
5.5
Vc
Control Voltage
V
(Vdd)
Pin,max
CW RF Input Power
dBm
+12
Pdiss
Total Power Dissipation [3]
W
4.4
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2,3]
(Vdd = 3.3V, Id=240mA), θjc = 28 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
Measurement Technique.
3. Board temperature (TB) is 25 °C , for TB >25 °C
derate the device power at 30mW per °C rise in
Board (package belly) temperature.
Electrical Specifications
TA = 25 °C, Vdd =3.3V, Iqtotal = 240mA, RF performance at 2.5 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, OFDMA operation
unless otherwise stated. Vbyp = 0V.
Symbol
Parameter and Test Condition
Units
Vdd
Supply Voltage
Iqtotal
Quiescent Supply Current (normal high gain mode) [4]
mA
240
Quiescent Supply Current (bypass mode, Vbyp = 3.3V)
mA
240
freq
Input Frequency Range
GHz
2.3
Vc
Control voltage required for Iqtotal=240mA
V
2.1
2.5
2.8
Gain
Gain
dB
28
30
31.5
OP1dB
Output Power at 1dB Gain Compression
dBm
Plin
Linear Output power at 2.5%EVM (normal gain mode)
dBm
Ilintotal
Total current draw at Plin level [5]
mA
425
S11
Input Return Loss, 50Ω source
dB
-16
S22
Output Return Loss, 50Ω load
dB
-17.5
S12
Reverse Isolation
dB
-52
2Fc
Second harmonic attenuation
dBc
45
Atten
Gain attenuation in bypass mode
dB
20
Vdet
Detector output DC voltage at Plin
V
2.6
DetR
Detector RF dynamic range
dB
10
Typ.
Max.
S
Stability under load VSWR of 6:1 (all phase)
dBc
3.3
Notes:
4. Iqtotal is defined as the sum of all quiescent currents flowing into pins Vdd1, Vdd2, Vdd3, Vddbias.
5. Current is measured during ON portion of amplifier using 50% downlink ratio, IEEE 802.16e modulation.
Min.
2.7
30
22.0
23.5
485
-55
Product Consistency Distribution Charts[1]
Figure 1a. Linear Pout Distribution (normal gain mode)
Figure 1b. Gain Distribution (normal gain mode)
Figure 1c. Vc Distribution for Iq(total)=240mA
Figure 1d. Gain Distribution (bypass mode)
Notes:
1. Distribution data sample size are 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
Figure 2. Demo board circuit for ALM-42216 module
Notes:
C1, C2, C7 : 7.5 pF, 0402 ceramic chip capacitor
C3, C4, C8 : 0.1uF 0402 ceramic chip capacitor
C5 : 100pF 0402 ceramic chip capacitor
C6 : 2.2 uF 0805 ceramic chip capacitor
Vdd3
Vdd2
Vdd1
C6
C3
C4
C5
RFinput
RFoutput
MATCH
MATCH
MATCH
MATCH
C1
C2
Bypass
SWITCH
& Bias
Vbyp
C7
Vc
C8
Vddbias
Vdet
Figure 3. Application circuit in demoboard
Notes:
1. In normal gain mode operation, Vbyp = 0V. Vc is a bias pin that is used to set the bias conditions to the 3 internal gain stages of the PA.
2. Typical quiescent current distribution with Vdd1=Vdd2=Vdd3 = 3.3V, Vbyp = 0V, Vc = 2.45V is :
a. Idd1 = 18 mA
b. Idd2 = 75 mA
c. Idd3 = 130 mA
d. I_Vddbias = 17mA
3. Bypass mode is enabled by setting Vbyp pin to 3.3V. This condition overrides the normal high gain mode operation and bypasses the first gain
stage, regardless of the voltage at Vc1 pin.
4. Modulated signal measurements are made with Agilent 89600 VSA and Agilent ESG4438C signal generator with IEEE 802.16e option using the
following test conditions :
- Signal format : IEEE 802.16e OFDMA, ¾ rate FEC
- Modulation : 64-QAM
- Numher of Subcarriers : 840
- Modulation bandwidth : 10 MHz
- Downlink ratio : 50%
Residual distortion of signal generator : (0.6-0.8)%. This distortion is included in the overall EVM data in the datasheet.
5. Typical operating voltages and currents : a. Normal gain mode : Vdd1 = Vdd2 = Vdd3 = Vddbias = 3.3V. Vc = 2.45V. Vbyp = 0V. Iqtotal = 240 mA.
b. Bypass mode : Vdd1 = Vdd2 = Vdd3 = Vddbias = 3.3V. Vc = 2.45V. Vbyp = 3.3V. Iqtotal = 240 mA.
S21, S11, S22 / dB
Figure 4. Small-signal performance in high-gain mode, Vdd = 3.3V
20
25deg C
15
S21
-30deg C
10
+85 deg C
5
0
-5
S11
-10
-15
S22
-20
-25
30
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Freq / GHz
Figure 6. Small-signal performance in bypass mode, Vdd = 3.3V
S21, S11, S22 / dB
40
35
25deg C
S21
30
-30deg C
25
+85 deg C
20
15
10
5
0
-5
S11
-10
-15
S22
-20
-25
30
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Freq / GHz
40
S21
35
25deg C
30
-30deg C
25
+85 deg C
20
15
10
5
0
S11
-5
-10
-15
S22
-20
-25
-30
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Freq / GHz
Figure 5. Small-signal performance in high-gain mode, Vdd = 5V
S21, S11, S22 / dB
S21, S11, S22 / dB
Unless otherwise stated, all measurements are made at Vdd=+3.3V, Iqtotal=240mA. Vc (typ) = 2.45V
20
25deg C
15
S21
-30deg C
10
+85 deg C
5
0
-5
S11
-10
-15
S22
-20
-25
30
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Freq / GHz
Figure 7. Small-signal performance in bypass mode, Vdd = 5V
8 10 12 14 16 18 20 22 24 26 28 30 32
Pout (dBm)
1000
900
800
700
600
500
400
300
200
100
0
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
1000
900
800
700
600
500
Gain_2.3GHz 400
Gain_2.5GHz
Gain_2.7GHz 300
Idd_2.3GHz 200
Idd_2.5GHz
Idd_2.7GHz 100
0
8 10 12 14 16 18 20 22 24 26 28 30 32
Pout (dBm)
Figure 12. CW Gain vs Pout @ 85°C high-gain mode, Vdd = 3.3V
Gain_2.3GHz
Gain_2.5GHz
Gain_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pout (dBm)
Gain (dB)
Idd_total (mA)
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Figure 11. CW Gain vs Pout @ -30°C high-gain mode, Vdd = 5 V
Idd_total (mA)
Gain (dB)
Figure 10. CW Gain vs Pout @ -30°C high-gain mode, Vdd = 3.3V
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
Idd_total (mA)
Gain_2.3GHz
Gain_2.5GHz
Gain_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
1100
1000
900
800
700
600
500
Gain_2.3GHz 400
Gain_2.5GHz
Gain_2.7GHz 300
Idd_2.3GHz 200
Idd_2.5GHz
Idd_2.7GHz 100
0
8 10 12 14 16 18 20 22 24 26 28 30 32 34
Pout (dBm)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
Gain_2.3GHz
Gain_2.5GHz
Gain_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
8 10 12 14 16 18 20 22 24 26 28 30 32 34
Pout (dBm)
Figure 13. CW Gain vs Pout @ 85°C high-gain mode, Vdd = 5V
1100
1000
900
800
700
600
500
400
300
200
100
0
Idd_total (mA)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
Figure 9. CW Gain vs Pout @ 25°C high-gain mode, Vdd = 5V
Idd_total (mA)
Gain (dB)
Figure 8. CW Gain vs Pout @ 25°C high-gain mode, Vdd = 3.3V
Gain (dB)
8 10 12 14 16 18 20 22 24 26 28 30 32
Pout (dBm)
Gain (dB)
Gain_2.3GHz
Gain_2.5GHz
Gain_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
1000
900
800
700
600
500
400
300
200
100
0
Idd_total (mA)
Gain (dB)
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Pout (dBm)
500
450
400
350
300
250
200
150
100
50
0
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Pout (dBm)
Figure 18. EVM vs Pout @ 85°C High-gain mode, Vdd = 3.3V
EVM (%)
Idd_total (mA)
600
550
500
450
400
350
300
250
200
150
100
50
0
600
550
500
450
400
350
300
250
200
150
100
50
0
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
Figure 17. EVM vs Pout @ -30°C High-gain mode, Vdd = 5V
500
450
400
350
300
250
200
150
100
50
0
Idd_total (mA)
EVM (%)
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
Pout (dBm)
Figure 16. EVM vs Pout @ -30°C High-gain mode, Vdd = 3.3V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Idd_total (mA)
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
Idd_total (mA)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
600
550
500
450
400
350
300
250
200
150
100
50
0
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
Figure 15. EVM vs Pout @ 25°C High-gain mode, Vdd = 5V
Idd_total (mA)
EVM (%)
Figure 14. EVM vs Pout @ 25°C High-gain mode, Vdd = 3.3V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
EVM (%)
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Pout (dBm)
550
500
450
400
350
300
250
200
150
100
50
0
EVM (%)
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
Idd_total (mA)
EVM (%)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
EVM_2.3GHz
EVM_2.5GHz
EVM_2.7GHz
Idd_2.3GHz
Idd_2.5GHz
Idd_2.7GHz
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Pout (dBm)
Figure 19. EVM vs Pout @ 85°C High-gain mode, Vdd = 5V
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Vdet_2.3GHz_25C
Vdet_2.5GHz_25C
Vdet_2.7GHz_25C
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pout (dBm)
Figure 22. Detector vs Pout, normal gain mode, Vdd = 3.3V,
Temperature = 25°C
Figure 21. Spectral mask at Pout = 24.7 dBm meeting specs, Freq=2.5GHz,
normal gain mode, Vdd = 5V, Temperature = 25°C
VDet (V)
VDet (V)
Figure 20. Spectral mask at Pout = 22.2 dBm, Freq= 2.5GHz,
normal gain mode, Vdd = 3.3V, Temperature = 25°C
4.50
4.25
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Vdet_2.3GHz_25C
Vdet_2.5GHz_25C
Vdet_2.7GHz_25C
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Pout (dBm)
Figure 23. Detector vs Pout, normal gain mode, Vdd = 5V,
Temperature = 25°C
Top View
Sde View
Bottom View
Figure 24. Package Drawing dimensions
PCB Layout and Stencil Design
PCB Land Pattern (Top View)
Combined PCB and Stencil Layout
All dimensions are in mm
Figure 25. PC board and stencil design
10
Stencil Outline
Package Dimensions
REEL
USER FEED DIRECTION
CARRIER
TAPE
42216
WWYY
XXXX
TOP VIEW
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
Part Number Ordering Information
Part Number
No. of Devices
Container
ALM-42216-BLKG
100
Antistatic Bag
ALM-42216-TR1G
1000
7” Reel
ALM-42216-TR2G
3000
13” Reel
11
42216
WWYY
XXXX
42216
WWYY
XXXX
END VIEW
Reel Dimension - 7 inch
Ø178.0±1.0
FRONT
BACK
SEE DETAIL "X"
RECYCLE LOGO
FRONT VIEW
65°
7.9 - 10.9*
+1.5*
8.4
-0.0
45°
R10.65
R5.2
Slot hole ‘b’
BACK
60°
Ø55.0±0.5
Ø178.0±1.0
FRONT
Slot hole ‘a’
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
BACK VIEW
12
Ø51.2±0.3
14.4*
MAX.
Reel Dimension - 13 inch
11
12 1
2
3
4
0 2
10
9
7
6
5
DATE CODE
12MM
8
EMBOSSED LETTERING
16.0mm HEIGHT x MIN. 0.4mm THICK.
Ø329.0±1.0
HUB
Ø100.0±0.5
6
PS
02
12
12
10
911
876534
MP
N
CPN
EMBOSSED LETTERING
7.5mm HEIGHT
EMBOSSED LETTERING
7.5mm HEIGHT
1.5
(MI
N.)
FRONT VIEW
EMBOSSED LINE (2x)
89.0mm LENGTH LINES 147.0mm
AWAY FROM CENTER POINT
+0.5
-0.2
20.2(MIN.)
Ø13.0
11.9-15.4**
+2.0*
12.4
-0.0
Ø16.0
ESD LOGO
6
PS
RECYCLE LOGO
Detail "X"
SEE DETAIL "X"
Ø100.0±0.5
Ø329.0±1.0
6
PS
R19.0±0.5
BACK VIEW
SLOT
5.0±0.5(3x)
Ø12.3±0.5(3x)
For product information and a complete list of distributors, please go to our web site:
18.4 MAX.*
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved.
AV02-1191EN - May 2, 2008