AMGP-6445
40.5 – 43.5 GHz SMT Packaged Linear Power Amplifier
Data Sheet
Description
Features
The AMGP-6445 is a linear power amplifier in a surface
mount package designed for use in transmitters that
operate at frequencies between 40.5 GHz and 43.5 GHz. In
the operational frequency band, it provides 27dBm of
output power (P-1 dB) and 19 dB of small-signal gain. This
PA is designed for high linearity applications, and the PA
shows more than +31 dBm OIP3 at 18 dBm/tone output
power.
5 x 5 mm surface mount package
2
10 K:
4
7
6
5
Output IP3: +31 dBm Typical
50 Input and Output Match
Pin
Function
Vdd/Id: 5 V/700 mA
1
2
3
4
5
6
7
8
Vd1
Vd2
DET_O
RF_OUT
DET_R
Vg2
Vg1
RF_IN
40° C to +85° C operation
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Model: 50V
ESD Human Body Model: 250V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note: MSL Rating = Level 2A
Output P1dB : +27.5 dBm Typical
Integrated temperature compensated power detector
3
8
Gain: 19 dB Typical
ESD protection all ports above 50 V MM and 250 V HBM
Functional Block Diagram
1
RF frequency range from 40.5 to 43.5 GHz
Application
Microwave Radio Systems
Package Diagram
RF_IN
Vd1
Vd2
DET_OUT
1
2
3
8
4
7
6
5
Vg1
Vg2
DET_REF
RF_OUT
ELECTRICAL SPECIFICATIONS
Table 1. Absolute Minimum and Maximum Ratings
Parameter
Specifications
Description
Min.
Drain Supply Voltage
Vd1
Max.
Unit
Comments
5.5
V
0
V
-3
mA
Ig, total = Ig1 + Ig2 Ig, total occurs at
highest RF Pout condition.
Vd2
Gate Voltage
Vg1
-2
Vg2
Totel Gate Current
Ig1
Ig2
RF Input Power (Pin)
20
dBm
CW
Powe Dissipation (Pd)
RFIN
4
W
Pd = Vd1 x Id1 + Vd2 x Id2 + Pin – Pout
Channel Temperature
150
°C
150
°C
Storage Temperature
-65
Table 2. Recommended Operating Range
Parameter
Description
Drain Supply Voltage
Specifications
Pin
Min.
Vd1
Vg1
Max.
4.7 [1]
Vd2
Gate Supply Voltage
Typical
Unit
Comments
V
4.4
-0.83
-0.63
-0.43
V
Vg2
Quiescent Drain Supply
Current (Idq)
Vd1
200 [2]
Vd2
560
RF Output Power (Pout)
RFOUT
28
Frequency Range
40.5
Thermal Resistance, ch-b
Case Temperature
ESD
mA
Idq = Id1 + Id2
30
dBm
CW
43.5
GHz
13
-40
°C/W
+85
°C
Human Body Model
250
V
Machine Model
50
V
Notes:
1. Not recommend to operate below that this voltage level; otherwise, the amplifier may enter instability.
2. Not recommend to operate above that this current level; otherwise, the amplifier may enter instability.
2
Channel to board
Table 3. RF Electrical Characteristics [1]
All data measured on a 2.4mm connector based evaluation board at Vdd1 = Vdd2 = 5 V (pulse), Idq = 0.7 A (Id1 + Id2),
TC = 25° C, and 50 at all ports.
Performance
Parameter
Min.
Input Return Loss (S11)
Typical
Max.
Unit
Comments
-8
dB
-8
dB
22.9
21.1
22.5
dBm
-40
dB
28.9
27.9
29.8
dBm
Freq = 40.5, 42, 43.5 GHz
IM3 Level
-23
dBc
f = 20 MHz,
Po =18 dBm/tone
Detector sensitivity
2.4
V/W
Output Return Loss (S22)
Gain (S21)
Freq = 40.5 GHz
Freq = 42 GHz
Freq = 43.5 GHz
18
Reverse Isolation (S21)
P1dB
Freq = 40.5 GHz
Freq = 42 GHz
Freq = 43.5 GHz
27
Note:
1. Gain and P1dB measurement accuracy is subjected to the tolerance of ± 0.5 dB, ± 0.5 dBm respectively.
3
Freq = 40.5, 42, 43.5 GHz
Product Consistency Distribution Charts at 40.5 GHz, 42 GHz and 43.5 GHz, Vdd = 5.5 V, Id = 0.7 A
(Sample Size of 1500 pieces)
LSL
26
LSL
27
28
29
30
31
32
P1dB @ 40.5 GHz, Mean = 28.9 dBm, LSL = 27 dBm
27
28
29
30
31
32
29
30
31
32
18
19
20
21
22
23
24
25
26
24
25
26
Gain @ 40.5 GHz, Mean = 22.9 dB, LSL = 18 dB
LSL
LSL
19
20
21
22
Gain @ 42 GHz, Mean = 21.1 dB, LSL = 18 dB
4
28
LSL
P1dB @ 43.5 GHz, Mean = 29.8 dBm, LSL = 27 dBm
18
27
P1dB @ 42 GHz, Mean = 27.9 dBm, LSL = 27 dBm
LSL
26
26
23
24
25
26
18
19
20
21
22
23
Gain @ 43.5 GHz, Mean = 22.5 dB, LSL = 18 dB
25
0
20
-5
15
-10
S11 [dB]
S21 [dB]
Selected performance plots
10
5
-15
-20
0
-25
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
45
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
45
39 40 41 42
Frequency [GHz]
43
44
45
Figure 2. S11(dB) Frequency Sweep
Figure 1. S21(dB) Frequency Sweep
0
0
-10
-5
S12 [dB]
S22 [dB]
-20
-10
-15
-30
-40
-50
-20
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
-70
45
Figure 3. S22(dB) Frequency sweep
OIP3 [dBm]
P-1 [dBm]
29
28
27
26
25
39
40
41
42
Frequency [GHz]
Figure 5. P-1(dBm) Frequency Sweep
5
36
37
38
Figure 4. S12(dB) Frequency Sweep
30
38
35
43
44
35
34
33
32
31
30
29
28
27
26
25
OIP3 [dBm]
IM3 [dBc]
38
39
40
41
42
Frequency [GHz]
43
Figure 6. OIP3(dBm) Frequency Sweep at Po=18dBm/tone
44
-15
-17
-19
-21
-23
-25
-27
-29
-31
-33
-35
IM3 Level [dBc]
-25
-60
Selected Over Temperature Performance Plots
All data measured on a 2.4 mm connector based evaluation board at Vdd1 = Vdd2 = 5 V, Idq = 0.7 A (Id1 + Id2), and 50
at all ports. Idg has been maintained at 700 mA under different temperature conditions.
30
0
25
-5
S11 [dB]
S21 [dB]
20
15
-10
-15
10
-40° C
25° C
85° C
5
0
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
-25
45
Figure 7. S21(dB) Frequency Sweep over Temperature
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
45
Figure 8. S11(dB) Frequency Sweep over Temperature
0
0
-40° C
25° C
85° C
-5
-40° C
25° C
85° C
-10
-20
-10
S12 [dB]
S22 [dB]
-40° C
25° C
85° C
-20
-15
-30
-40
-50
-60
-20
-70
-25
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
P-1 [dBm]
Vgs [V]
-40° C
25° C
85° C
38
39
40
41
42
Frequency [GHz]
Figure 11. P-1(dBm) Frequency Sweep over Temperature
6
35
36
37
38
39 40 41
Frequency [GHz]
42
43
44
45
Figure 10. S12(dB) Frequency Sweep over Temperature
Figure 9. S22(dB) Frequency Sweep over Temperature
31
30
29
28
27
26
25
24
23
22
21
20
-80
45
43
44
-0.590
-0.595
-0.600
-0.605
-0.610
-0.615
-0.620
-0.625
-0.630
-0.635
-0.640
-0.645
-60
-40
-20
0
20
40
Temperature [°C]
60
Figure 12. Typical Vg to obtain Idq = 700 mA over Temperature
80
100
1.5
1.5
1
1
DET_O [V] and DET_R[V]
DET_O [V] and DET_R[V]
Detector Performance Plots
0.5
0
Det_O @25° C
Det_R @25° C
Det_O @-40° C
Det_R @-40° C
Det_O @85° C
Det_R @85° C
-0.5
-1
5
10
15
Pout [dBm]
20
25
1.5
1.5
1
1
0.5
0
Det_O @25° C
Det_R @25° C
Det_O @-40° C
Det_R @-40° C
Det_O @85° C
Det_R @85° C
-0.5
-1
5
10
15
Pout [dBm]
20
25
30
Figure 14. Detector voltages vs. Output Power at Freq = 41 GHz
DET_O [V] and DET_R[V]
DET_O [V] and DET_R[V]
0
30
Figure 13. Detector voltages vs. Output Power at Freq = 40 GHz
0.5
0
Det_O @25° C
Det_R @25° C
Det_O @-40° C
Det_R @-40° C
Det_O @85° C
Det_R @85° C
-0.5
-1
-1.5
-1.5
0
5
10
15
Pout [dBm]
20
25
0
30
1.5
Vdet_R - Vdet_O [V]
1
0.5
0
Det_O @25° C
Det_R @25° C
Det_O @-40° C
Det_R @-40° C
Det_O @85° C
Det_R @85° C
-0.5
-1
0
5
10
15
Pout [dBm]
20
25
Figure 17. Detector voltages vs. Output Power at Freq = 44 GHz
5
10
15
Pout [dBm]
20
25
30
Figure 16. Detector voltages vs. Output Power at Freq = 43 GHz
Figure 15. Detector voltages vs. Output Power at Freq = 42 GHz
-1.5
Det_O @25° C
Det_R @25° C
Det_O @-40° C
Det_R @-40° C
Det_O @85° C
Det_R @85° C
-0.5
-1.5
0
DET_O [V] and DET_R[V]
0
-1
-1.5
7
0.5
30
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DET_O
Vdelta [V]
0
0.1
0.2
0.3
0.4
Pout [W]
0.5
0.6
0.7
Figure 18. Typical detector sensitivity vs. Output Power at Freq = 42 GHz
Evaluation Board Description
1
2
Recommended turn on sequence
3
GND
Apply Vg1 and Vg2 at -1.5 V
GND
Apply Vd1 and Vd2 at 0 V
Increase Vd to 5 V
AVAGO
Tech
Increase Vg of -1.5 V to approximately -0.6 V to obtain
Idsq = 0.7 A
5 x 5 mm
AMGP
6445
YWWDNN
8
4
Apply RF Input not to exceed 20 dBm
Turn off in reverse order
Q104
Table 4. Typical Test Conditions
Pin
GND
Vd1,2
GND
7
6
5
5V
Drain Supply Voltage
Idq = Id1 + Id2
700 mA
Quiescent Drain Current
Vg1, 2
-0.6
Gate Supply Voltage
Notes:
Vg1 and Vg2 of -0.6 V may need be adjusted to obtain Idsq = 700 mA.
Demo board circuit
DET_0
100 pF > 0.1 PF
Vdd
+5 V
1
2
100 K:
3
DET_0
100 K:
10 K:
10 K:
+5 V
8
RF_IN
4
RF_OUT
DET_R
–
10 K:
+
7
6
Vout = DET_R – DET_0
10 K:
5
–5 V
Figure 20.
DET_R
Vgg
> 0.1 PF 100 pF
Figure 19.
Integrated Detector Application Circuit
To obtain temperature compensated RF power detector
function, a differential voltage between DET_R and DET_O
must be obtained by using an operational amplifier in a
differential mode configuration as shown in Figure 19.
8
Package Dimension, PCB Layout and Tape and Reel
information
Part Number Ordering Information
Please refer to Avago Technologies Application Note 5521,
AMxP-xxxx production Assembly Process (Land Pattern B).
Part Number
Devices per
Container
Container
AMGP-6445-BLKG
10
antistatic bag
AMGP-6445-TR1G
100
7” Reel
AMGP-6445-TR2G
500
7” Reel
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-3210EN - May 10, 2012
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