AMMC-6550
15 to 50 GHz Image Rejection Mixer
Data Sheet
Chip Size: 1600 x 1300 m (63 x 51 mils)
Chip Size Tolerance: ± 10 m (± 0.4 mils)
Chip Thickness: 100 ± 10 m (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 m (4 x 4 ± 0.4 mils)
Description
Features
AMMC-6550 is an image rejection mixer (IRM), which
can also be used as an IQ mixer. The AMMC-6550 utilizes
two distributed passive FET mixers and a Lange coupler
realized in Avago Technologies unique 0.25m gate
length Enhancement mode PHEMT (E-PHEMT) technology. Although the AMMC-6550 works as a resistive mixer,
the mixer can be biased with a positive DC voltage (+0.4V
Typ.).
AMMC-6550 is designed for use in commercial digital
radios and wireless LANs. The mixer requires an off-chip
90-degree hybrid to achieve signal image rejection and
+0.4V (Typ.) DC bias.
Wide frequency range: 15 - 50 GHz
Low conversion loss: 10 dB (Typ.)
Image Rejection: 15 dB (Typ.)
High Input IP3: +20dBm
Positive polarity for Gate and Drain Bias
Schematic
RF
Vg
drain
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
IF1
IF2
LO
gate
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure
that an ESD approved carrier is used when units are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices. The manufacturer assumes no responsibilities for ESD damage due to improper storage and handling of these devices.
AMMC-6550 Maximum Ratings [1]
Symbol
Parameters and Conditions
Units
Minimum
Maximum
Vg
Gate Supply Voltage
V
-1.2
+1.2
Pin
CW Input Power (IF and LO port)
dBm
25
Tch
Operating Channel Temperature
°C
+150
Tstg
Storage Case Temperature
°C
Tmax
Max. Assembly Temp (60 sec. max)
°C
-65
+150
+300
Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.
AMMC-6550 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Typical
Vg
Gate Supply Operating Voltage
V
+0.4
Ig
Gate Supply Current (under any RF power drive and temperature)
mA
0
Note: 1. Ambient operational temperature Ta=25°C unless otherwise noted.
AMMC-6550 Typical performances (TA= 25°C, Vg=+0.4 V, IF frequency=1GHz, Zo=50 )
Symbol
Parameters and Test Conditions
Units
Typical
FRF
RF Frequency Range
GHz
15 - 50
FLO
LO Frequency Range
GHz
15 - 50
FIF
IF Frequency Range
GHz
DC - 5
PLO
Lo port pumping power
dBm
>10
CG
RF to IF conversion gain
dB
-10
RL_RF
RF Port Return Loss
dB
-10
RL_LO
LO Port Return Loss
dB
-15
RL_IF
IF Port Return Loss
dB
-10
IR
Image rejection ratio
dB
15
LO-RF Iso.
LO to RF port Isolation
dB
20
LO-IF Iso.
LO to IF port Isolation
dB
20
RF-IF Iso.
RF to IF port Isolation
dB
15
IIP3
Input IP3, Fdelta=100MHz, Prf=-10dBm, Plo=15dBm
dBm
20
P-1
Input port power at 1dB gin compression point, Plo=+15dBm
dBm
+10
NF
Noise Figure
dB
10
2
AMMC-6550 RF Specifications [2, 3, 6, 7] (TA= 25°C, Vg=+0.4V, Plo=+10dBm, Zo=50 )
Symbol
LO=17GHz
Parameters and
Test Conditions
[4]
CG
Conversion Gain
IR
Image Rejection Ratio [5]
Units
Min.
Typ.
dB
-11.5
-10
dB
-14
LO=28GHz
Max.
Min.
Typ.
-10.5
-9.5
-12
-18.6
LO=40GHz
Max.
-12
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture from Ta=25°C.
3. Specifications are derived from measurements in 50 test environment.
4. 100% on-wafer RF testing is done at RF frequency = 19, 30, and 42GHz; IF frequency = 1GHz.
5. 100% on-wafer RF testing is done at RF frequency = 15, 26, and 38GHz; IF frequency = 2GHz.
6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency = 1.0-2.0GHz
7. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc.
Typical distribution of conversion gain and image rejection ratio based on 5000 parts.
StdDev=0.26
Conversion Gain LO=17GHz,RF=19GHz
StdDev=0.27
Conversion Gain LO=40GHz, RF=42GHz
StdDev=0.89
Image Rejection Ratio LO=28GHz, RF=26GHz
3
StdDev=0.24
Conversion Gain LO=28GHz, RF=30GHz
StdDev=0.53
Image Rejection Ratio LO=17GHz, RF=15GHz
StdDev=1.15
Image Rejection Ratio LO=40GHz, RF=38GHz
Min.
Typ.
-12
-10.3
-17.5
Max.
-12
Biasing and Operation
The recommended DC bias condition for optimum
performance, and reliability is Vg=+0.4 volts. There is
approximately zero current consumption for the gate
biasing because the FET mixer was designed as the passive operation.
Vg
RF
IF1
Figure 1 is a simple block diagram, as reference for
Figure 2. Figure 2 is a schematic of the image-rejection
(SSB) mixer MMIC connected to an off-chip quadrature
hybrid.
Figures 3 through Figure 11 show typical down conversion measurement results under the image rejection
operation. Data presented for the AMMC-6550 was
obtained using the circuit described here. Please note
that the image rejection and isolation performance
is dependent on the selection of the low frequency
quadrature hybrid. The performance specification of the
low frequency quadrature hybrid as well as the phase
balance and VSWR of the interface to the AMMC-6550
will affect the overall mixer performance.
IF2
LO
Figure 1. AMMC-6550 Schematic
No ground wires are needed since ground connections
are made with plated through-holes to the backside of
the device.
The AMMC-6550 is not recommended for up conversion
applications.
LSB
USB
IF
RF
15-50GHz
IF
LO
+0.4V
100pF
Vg
RF
IF1
LSB
USB
IF2
LO
LO
15-50GHz
+10dBm
Figure 2. AMMC-6550 Assembly diagram for SSB mixer applications. 50 termination is required for the unwanted side-band termination
4
AMMC-6550 Typical performances (TA = 25°C, Vg =+0.4 V)
0
0
-5
-5
LSB
-10
-10
-15
-15
-20
CG [dB]
CG [dB]
USB
LSB
-20
-25
-25
-30
-30
USB
-35
-35
10
15
20
25
30
35
Frequency [GHz]
40
45
50
10
55
15
20
25
30
35
40
Frequency [GHz]
45
50
55
Figure 4. Typical conversion Gain, Plo=+10dBm, IF2=1GHz
Figure 3. Typical conversion Gain, Plo=+10dBm, IF1=1GHz
15
20
P-1[dBm] @Plo=14dBm
10
CG [dB], P-1[dBm]
Noise Figure [dB]
15
5
P-1[dBm] @Plo=10dBm
0
-5
CG[dB] @Plo=14dBm
-10
10
5
CG[dB] @Plo=10dBm
-15
0
15
20
25
30
35
Frequency [GHz]
40
45
50
Figure 5. Typical RF port input power (@P-1), Plo=+10dBm, Fif=1GHz
15
20
25
30
35
Frequency [GHz]
40
45
50
Figure 6. Typical Noise Figure, Plo=10dBm, Fif=1GHz
0
25
-5
IIP3[15dBm]
USB
-10
-15
15
IIP3[10dBm]
10
CG [dB]
IIP3 [dBm]
20
-20
-25
LSB
-30
5
-35
-40
0
15
20
25
30
35
Frf [GHz]
40
Figure 7. Typical IP3, Fif=1GHz, Plo=10dBm and 15dBm
5
45
50
-20
-15
-10
-5
0
5
Plo [dBm]
10
15
Figure 8. Typical Conversion gain vs. LO power, Prf=-20dBm, and
Flo=30GHz
20
0
0
-5
USB(13dBm)
-10
Return Loss[dB]
Concersion Gain[dB]
-5
USB(10dBm)
-15
LSB(10dBm)
-20
LSB(13dBm)
-25
-20
-25
-35
0
0.2
0.4
0.6
Vgs[V]
0.8
1
15
1.2
0
-5
-5
-10
-10
Return-Loss [dB]
0
-15
-20
-25
25
30
35
Frf [GHz]
40
45
50
-15
-20
-25
-30
-30
-35
20
Figure 10. Typical RF port Return Loss vs. Frequency, Plo=+10dBm
Figure 9. Typical Conversion gain vs. Gate voltage, Flo=30GHz,
Plo=+10dBm and +13dBm
Return Loss [dB]
-15
-30
-30
-35
0
1
2
3
4
5
6
IF Frequency [GHz]
Figure 11. Typical IF port Return Loss vs. IF frequency, Frf=35GHz, and
Plo=+10dBm
Figure 13. Bond pad location (um)
6
-10
15
20
25
30
35
Flo [GHz]
40
45
50
Figure 12. Typical LO port return Loss vs. Frequency, Plo=+10dBm,
Fif=1GHz
Assembly Techniques
The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1,2]. For conductive epoxy,
the amount should be just enough to provide a thin fillet around the bottom perimeter of the die. The ground
plane should be free of any residue that may jeopardize
electrical or mechanical attachment. Caution should be
taken to not exceed the Absolute Maximum Rating for
assembly temperature and time.
duration of 76 8mS. A guided wedge at an ultrasonic
power level of 64dB can be used for the 0.7mil wire. The
recommended wire bonding stage temperature is 150
2C.
Thermo-sonic wedge bonding is the preferred method
for wire attachment to the bond pads. The RF connections should be kept as short as possible to minimize
inductance. Gold mesh or double-bonding with 0.7mil
gold wire is recommended. Mesh can be attached using a
2mil round tracking tool and a too force of approximately
22grams with an ultrasonic power of roughly 55dB for a
This MMIC is also static sensitive and ESD handling precautions should be taken.
The chip is 100ìm thick and should be handled with
care.
This MMIC has exposed air bridges on the top surface.
Handle at the edges or with a custom collet (do not pick
up die with vacuum on die center).
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
Vgs
100pF
Note:
1. Flares on thin film
substrate compensate
bonding wire inductance.
LO
RF
IF1
Figure 14. Recommended die assembly
7
IF2
Ordering Information:
AMMC-6550-W10 = 10 devices per tray
AMMC-6550-W50 = 50 devices per tray
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. Obsoletes AV01-0394EN
AV02-1285EN - September 23, 2011