AMMP-6421-TR1G

AMMP-6421 13-16 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6421 MMIC is a 1W power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 13GHz and 16GHz. Between 13GHz and 16GHz, it provides 29 dBm of output power (P-1dB) and 26dB of small-signal gain. This power amplifier is optimized for linear operation with an output third order intercept point (OIP3) of +36dBm. The AMMC-6421 is manufactured with Avago’s unique enhancement mode 0.25m GaAs PHEMT process that eliminates the need for negative DC biasing.  5x5mm SMT package  One-watt saturated output power  50  match on input and output Package Diagram Applications RF IN Vg Vd1 Vd2 1 2 3 8 Typical Specifications (Vd=5V, Idsq=0.6A)     Frequency range 13 to 16 GHz Small signal Gain of 26dB Output power @P-1 of 29dBm (Typ.) Input/Output return-loss of -6dB/-8dB     4 RF OUT Microwave Radio systems Satellite VSAT, Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax)  WLL and MMDS loops Functional Block Diagram 7 6 5 1 Vg Vd1 2 3 Vd2 8 4 7 6 5 RoHS-Exemption Pin Function 1 2 3 4 5 6 7 8 Vg Vd1 Vd2 RF_OUT Vd2 Vd1 Vg RF_IN Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 50 V ESD Human Body Model (Class 0) = 200 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Please refer to hazardous substances table on page 10. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on wafer. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. 5. The Gain at P1dB tested at 13, 14.5 and 16 GHz guaranteed with measurement accuracy +/-1dB for Gain, +/-1.2dB for P1dB at 13 GHz and +/-1.5dB for P1dB at 14.5 GHz and 16 GHz. 6. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies. Table 1. RF Electrical Characteristics TA=25°C, Vd=5.0V, Idq=0.6mA, Vg= +0.5V, Zo=50 Ω 13GHz 14.5GHz 16GHz Parameter Min Typ Max Min Typ Max Min Typ Max Unit Small Signal Gain, Gain 24 26 30 22 26 28 24 26 30 dB Output Power at 1dBGain Compression, P1dB 27 29 26 29 25 29 dBm Output Power at 3dBGain Compression, P3dB 30 30 30 dBm Output Third Order Intercept Point, OIP3; Point Δf= 2 MHz; Pout = +10 dBm, SCL 36 36 36 dBm Min Reverse Isolation, Isolation 45 45 45 dB Input Return Loss, Rlin 6 6 6 dB Output Return Loss, RLout 8 8 8 dB Comment Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Id 600 mA Vd = 5V, Vg set for typical Id(q) Typical Gate Supply Voltage, Vg 0.5 V Id(q) = 600mA 2 Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance (channel to backside), jc Ambient operational temperature TA = 25°C jc = 17 °C/W Channel Temperature, Tch Tch = 136 °C Note: 1. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case for the channel temperature is under the quiescent operation. At saturated output power, DC power consumption rises to 5 W with 1.43 W RF power delivered to load. Power dissipation is 3.57 W and the temperature rise in the channel is 33.6°C. In this condition, the base plate temperature must be remained below 94.3°C to maintain maximum operating channel temperature below 155°C. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Max. Unit Drain Supply Voltage, Vd 6 V Gate Supply Voltage, Vg 1 V Power Dissipation, Pd [2,3] 8 W RF CW Input Power, Pin [2] 23 dBm Channel Temperature, Tch, max [4,5] +150 °C +150 °C 260 °C Storage Case Temperature, Tstg Maximum Assembly Temperature, Tmax Min. -65 Comments CW 30 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET 5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3 AMMP-6421 Typical Performances (Data obtained from 3.5-mm connector based test fixture, and this data is including connecter loss, and board loss.) (TA = 25°C, Vd = 5 V, Id(q) = 600 mA, Zin = Zout = 50 ) 40 35 S11[dB] S22[dB] 30 -5 25 20 -40 15 10 Return Loss [dB] -20 S12 [dB] S21[dB] 0 0 S21[dB] S12[dB] -10 -60 -15 -80 -20 5 0 8 10 12 14 16 Frequency [GHz] 18 8 20 Figure 1. Typical Gain and Reverse Isolation 18 20 18 20 8 Noise Figure [dB] P-1 [dBm], PAE [%] 14 16 Frequency [GHz] 10 P-1 PAE 30 25 20 15 6 4 2 10 0 5 8 10 12 14 16 Frequency [GHz] 18 1600 Pout(dBm) PAE[%] Id(total) 1200 25 1000 20 800 15 600 10 400 5 200 0 -20 -15 -10 -5 0 Pin [dBm] 5 10 15 Figure 5. Typical Output Power, PAE, and Total Drain Current versus Input Power at 14GHz IM3 Level [dBc] 30 1400 Ids [mA] 35 10 12 14 16 Frequency [GHz] Figure 4. Typical Noise Figure 40 0 -25 8 20 Figure 3. Typical Output Power (@P-1) and PAE and Frequency Po[dBm], and, PAE[%] 12 Figure 2. Typical Return Loss (Input and Output) 35 4 10 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 10 11 12 13 14 15 16 17 Frequency [GHz] 18 19 20 Figure 6. Typical IM3 level vs. Frequency at +20dBm output single carrier level (SCL) Typical Performance (continued) (Data obtained from 3.5-mm connector based test fixture, and this data is including connecter loss, and board loss.) (TA = 25°C, Vd = 5 V, Id(q) = 600 mA, Zin = Zout = 50 ) -20 800 -20 800 -30 750 -30 750 -40 700 -40 700 -50 650 -50 650 -60 600 -60 600 -70 550 -70 550 500 -80 4 6 8 10 12 14 16 18 20 22 24 26 SCL [dBm] Figure 7. Typical IM3 level and Ids vs. single carrier output level at 13GHz 0 4 6 8 10 12 14 16 18 20 22 24 26 SCL [dBm] 850 500 Figure 8. Typical IM3 level and Ids vs. single carrier output level at 14GHz 900 IM3[dBc] Ids[mA] 900 0 IM3[dBc] Ids[mA] 850 -10 -20 800 -20 800 -30 750 -30 750 -40 700 -40 700 -50 650 -50 650 -60 600 -60 600 -70 550 -70 550 500 -80 -80 4 6 8 10 12 14 16 18 20 22 24 26 SCL [dBm] Figure 9. Typical IM3 level and Ids vs. single carrier output level at 15GHz IM3 [dBc] 850 Ids [mA] -10 IM3 [dBc] IM3 [dBc] -10 -80 5 900 IM3[dBc] Ids[mA] 850 Ids [mA] IM3 [dBc] -10 0 Ids [mA] 900 IM3[dBc] Ids[mA] Ids [mA] 0 500 4 6 8 10 12 14 16 18 20 22 24 26 SCL [dBm] Figure 10. Typical IM3 level and Ids vs. single carrier output level at 16GHz AMMP-6421 Typical over temperature dependencies (TA = 25°C, Vd =5 V, Id(q) = 600 mA, Zin = Zout = 50 ) 0 S21[dB] S11[dB] -5 -10 S11_25 S11_-40 S11_85 -15 -20 2 4 6 8 10 12 14 16 Frequency[GHz] 18 20 22 P-1 [dBm] S22[dB] -5 -10 S22_25 S22_-40 S22_85 -20 4 6 8 10 12 14 16 Frequency[GHz] Figure 13. Typical S22 over temperature 6 4 6 8 10 12 14 16 Frequency[GHz] 18 20 22 24 Figure 12. Typical Gain over temperature 0 2 S21_25 S21_-40 S21_85 2 24 Figure 11. Typical S11 over temperature -15 34 32 30 28 26 24 22 20 18 16 14 12 10 18 20 22 24 32 30 28 26 24 22 20 18 16 14 12 P-1_-40deg P-1_25deg P-1_85deg 10 11 12 13 14 15 Frequency [GHz] Figure 14. Typical P1 over temperature 16 17 18 Typical Scattering Parameters [1] (TA = 25°C, Vd =5 V, ID = 600 mA, Zin = Zout = 50 ) Freq [GHz] S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 1 3.22 1.45 -20.80 -20.82 0.09 -5.05 -35.45 1.69E-02 -113.80 3.60 1.51 158.04 2 0.82 1.10 -15.77 -22.80 0.07 -4.50 -37.48 1.34E-02 -113.80 1.56 1.20 149.01 3 -2.32 0.77 -6.21 -25.37 0.05 -3.56 -40.14 9.84E-03 -113.79 -0.64 0.93 134.19 4 -6.32 0.48 15.98 -29.01 0.04 -1.66 -43.99 6.32E-03 -113.79 -2.32 0.77 110.63 5 -8.24 0.39 64.29 -35.36 0.02 4.37 -51.09 2.79E-03 -113.77 -2.22 0.77 81.97 6 -4.75 0.58 102.83 -48.21 0.00 110.97 -62.67 7.35E-04 66.08 -0.44 0.95 59.24 7 -5.12 0.55 104.57 -45.45 0.01 84.47 -47.30 4.32E-03 -48.35 -0.32 0.96 40.55 8 -6.93 0.45 92.88 -19.99 0.10 111.07 -50.95 2.83E-03 175.39 -1.81 0.81 12.86 9 -7.57 0.42 69.98 2.91 1.40 16.33 -51.57 2.64E-03 147.20 -5.10 0.56 -24.21 10 -7.03 0.45 42.82 20.60 10.71 -119.19 -54.32 1.92E-03 146.44 -6.63 0.47 -33.47 11 -5.63 0.52 16.27 29.64 30.33 70.21 -56.65 1.47E-03 134.01 -5.09 0.56 -70.24 12 -5.04 0.56 5.80 30.63 34.01 -75.22 -56.90 1.43E-03 166.70 -8.25 0.39 -77.87 13 -4.07 0.63 -26.92 30.60 33.87 146.03 -57.11 1.39E-03 114.49 -8.88 0.36 -86.72 14 -8.53 0.37 -26.01 26.99 22.35 36.29 -61.39 8.52E-04 -39.90 -23.11 0.07 -40.24 15 -9.63 0.33 -32.05 25.98 19.91 -61.13 -56.95 1.42E-03 -163.33 -10.16 0.31 5.61 16 -8.89 0.36 -56.38 26.58 21.33 -172.51 -50.29 3.06E-03 -170.11 -6.59 0.47 -16.17 17 -10.61 0.29 -91.07 26.33 20.74 70.84 -70.34 3.04E-04 168.60 -8.98 0.36 -56.63 18 -5.44 0.53 -95.08 29.14 28.64 -92.98 -59.79 1.03E-03 -82.15 -12.98 0.22 -101.09 19 -6.01 0.50 -140.38 11.72 3.85 62.18 -47.74 4.10E-03 -43.64 -15.86 0.16 89.98 20 -9.54 0.33 169.29 -12.96 0.22 -10.58 -39.20 1.10E-02 -120.94 -5.92 0.51 -18.40 21 -15.70 0.16 64.10 -21.08 0.09 -129.11 -40.97 8.94E-03 -167.68 -2.35 0.76 -65.21 22 -5.81 0.51 27.18 -39.66 1.04E-02 150.93 -43.70 6.53E-03 159.88 -1.14 0.88 -90.95 23 -2.67 0.73 -6.68 -39.83 1.02E-02 104.74 -47.51 4.21E-03 105.92 -1.22 0.87 -107.37 24 -3.07 0.70 -31.53 -43.85 6.42E-03 -11.62 -53.42 2.13E-03 17.26 -1.23 0.87 -117.13 25 -4.30 0.61 -56.50 -44.41 6.02E-03 -98.07 -51.89 2.54E-03 -63.98 -1.12 0.88 -132.87 26 -5.42 0.54 -89.90 -50.60 2.95E-03 43.80 -46.85 4.55E-03 -67.11 -0.55 0.94 -148.59 27 -4.92 0.57 -125.50 -40.26 9.70E-03 -129.43 -41.20 8.71E-03 -101.52 -0.60 0.93 -168.10 28 -4.52 0.59 -148.37 -35.86 1.61E-02 -138.94 -41.27 8.64E-03 -164.60 -0.86 0.91 176.85 29 -4.56 0.59 -156.26 -40.91 9.01E-03 172.66 -44.67 5.84E-03 159.25 -0.47 0.95 167.80 30 -4.57 0.59 -151.19 -64.26 6.12E-04 40.57 -53.94 2.01E-03 89.72 -0.32 0.96 163.09 31 -5.29 0.54 -144.53 -44.94 5.66E-03 -107.38 -55.80 1.62E-03 -161.00 -0.43 0.95 154.34 Note: 1. Reference planes for this data are at the package RF I/O edges. 7 Biasing and Operation The recommended quiescent DC bias condition for optimum efficiency, performance and reliability is Vd=5 volts with Vg (+0.5V typ.) set to give Id(q)=600 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V and the quiescent drain current biasing range is 400mA to 650mA. A single DC gate supply connected to Vg will bias all the amplifier stages. Muting can be accomplished by setting Vg to zero. A simplified schematic for the MMIC die in the package is shown in Figure 15. The MMIC die contains ESD and over voltage protection diodes for Vg, Vd1, and Vd2. ESD diodes protect all possible ESD or over voltage damages among Vg to ground, Vg to Vd1, Vg to Vd2, Vd1 to ground and VG Vd2 to ground. The typical forward current versus voltage for 11 diodes connected in series is shown in Figure 16. The RF input and output are DC blocked internally. Under the recommended DC quiescent biasing condition at Vds=5V, Ids=600mA, Vgg=+0.5V, typical gate terminal current is approximately 0.02mA. If an active biasing technique is selected for the AMMP6421 MMIC PA DC biasing, the active biasing circuit must have more than 10-times higher internal current that the gate terminal current. The AMMP6421 can be biased either single positive DC biasing or dual positive supply operation as shown in Figure 17(a) and (b). VD1 VD2 Input Output VD1 VG Figure 15. Simplified schematic for the MMIC die in the package 8 VD2 20 |Icomp(I_METER.AMP1,0)| (mA) Diode_current 18 Diode Current [mA] 16 14 12 10 8 6 4 2 0 5 5.5 6 6.5 Voltage (V) 7 7.5 8 Figure 16. Typical ESD diode current versus diode voltage for 11-connected diodes in series >0.1 PF 100 pF 100 pF >0.1 PF 50: 450: Vg = 0.5V 1 1 2 8 4 6 4 RF_OUT RF_OUT 6 5 5 Note: 1. 50O Resistor may need to modify to obtain desired quiescent drain current. 100 pF >0.1 PF 2. Vg can be connected either pin-1 or pin-7. 3. Vd1 can be connected either pin-2 or pin-6. 4. Vd2 must be connected both sides (pin-3 and pin-5). Vd = 5V (a) Single positive bias operation Figure 17. AMMP-6421 Schematic and recommended assemble example 9 3 8 7 7 2 3 RF_IN RF_IN 100 pF >0.1 PF >0.1 PF 100 pF Note: 1. Vg=+0.5V may need to adjust to obtain desired quiescent drain current. 2. Vg can be connected to either pin-1 or pin-7. 3. Vd1 can be connected to either pin-2 or pin-6. 4. Vd2 must be connected to both sides (pin-3 and pin-5). (b) Dual positive bias operation 100 pF >0.1 PF Vd = 5V Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5521, AMxP-xxxx production Assembly Process (Land Pattern B). AMMP-64xx Part Number Ordering Information Part Number Devices Per Container Container AMMP-6421-BLKG 10 Antistatic bag AMMP-6421-TR1G 100 7” Reel AMMP-6421-TR2G 500 7” Reel Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the “x” indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 “×” Note: EU RoHS compliant under exemption clause of “lead in electronic ceramic parts (e.g. piezoelectronic devices)” For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. AV02-1678EN - October 14, 2011 Polybrominated diphenylether (PBDE) PBDE