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AMMP-6441-TR2G

AMMP-6441-TR2G

  • 厂商:

    AVAGO(博通)

  • 封装:

    8-QFN

  • 描述:

    IC RF AMP LMDS 36GHZ-40GHZ 8SMD

  • 数据手册
  • 价格&库存
AMMP-6441-TR2G 数据手册
AMMP-6441 36 - 40 GHz, 0.4W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6441 MMIC is a 0.4W power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 36GHz and 40GHz. In the operational band, it provides 26 dBm of output power (P-1dB) and 20dB of small-signal gain.  5x5mm SMT package Applications  Frequency range 36 to 40 GHz  LMDS & Pt-Pt mmW Long Haul  Small signal Gain of 20dB  Microwave Radio systems  Output power @P-1 of 26dBm (Typ.)  WLL and MMDS loops  Input and Output return losses -10dB Package Diagram Functional Block Diagram Vg 1 RF IN Vd1 2  0.4 watt output power  50  match on input and output Typical Performance (Vd=5V, Idsq=0.45A) Vd2 1 2 3 3 8 4 7 6 5 Vg Vd1 Vd2 RF OUT 8 4 7 6 Pin Function 1 2 3 4 5 6 7 8 Vg Vd1 Vd2 RF OUT Vd2 Vd1 Vg RF IN 5 Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. RoHS-Exemption Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 40V ESD Human Body Model (Class 0): 150V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Please refer to hazardous substances table on page 10. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6120 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. Table 1. RF Electrical Characteristics TA=25°C, Vd=5.0V, Idq=0.45V, Vg=-1V, Zo=50 Ω Parameter Min Typ. Max 40 Unit Operational Frequency, Freq 36 Small-signal Gain, Gain 18 20 dB GHz Output Power at 1dB Gain Compression, P-1dB 24.5 26 dBm Relative Third Order Inter-modulation level (Δf=10MHz, Po=+12dBm, SCL), IM3 -38 dBc Input Return Loss, Rlin 10 dB Output Return Loss, Rlout 10 dB Reverse Isolation, Isolation 45 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Typical Drain Supply Current, Idq Max. 450 Gate Supply Operating Voltage, Vg -1.3 -1 -0.7 Unit Comments mA Vd = 5V, Vg set for Id Typical V Idq=450mA Table 3. Thermal Properties Parameter Test Conditions Value Channel Temperature, Tch Thermal Resistance (Channel-to-Base Plate), ch-bs Tch=150 °C Jc = 34 °C/W Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C Thermal Resistance at backside temperature Tb=25°C Note: 1. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Pin Min. Max. Unit 5.5 V -2 0 Drain Supply Voltage, Vd Gate Supply Voltage, Vg Power Dissipation, P¬D 3 CW Input Power, Pin 20 dBm Channel Temperature +150 °C +155 °C +260 °C Storage Temperature Maximum Assembly Temperature -65 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2 Comments CW 30 second maximum Typical Distribution Charts LSL LSL 20 21 22 23 24 18 Figure A. Gain @ 37GHz, Nominal = 23, LSL = 18 LSL 20 21 22 LSL 18 19 20 21 22 25 Figure C. Gain @ 40GHz, Nominal = 20, LSL = 18 26 27 28 Figure D. P1dB @ 37GHz, Nominal = 27, LSL = 24.5 LSL LSL 25 26 27 Figure E. P1dB @ 38GHz, Nominal = 27, LSL = 24.5 3 19 Figure B. Gain @ 38GHz, Nominal = 21, LSL = 18 28 29 25 26 27 Figure F. P1dB @ 40GHz, Nominal = 28, LSL = 24.5 28 29 Typical Performance (Data was obtained from a 2.4mm connector based test fixture and includes connector and board losses. Connector and board loss is approximately 0.5dB at input and output ports for an approximate total of 1dB.) (TA = 25°C, Vdd=5V, Idq=0.45 A, Vg=-1 V, Zin = Zout = 50 ) 30 S21[dB] S12[dB] 0 -35 -5 -40 15 -45 10 -50 5 -55 -20 -60 -25 0 30 32 34 36 38 40 42 44 Frequency [GHz] 46 48 30 8 Noise Figure [dB] 25 20 15 P-1 PAE@P1 P-3 PAE@P3 34 36 38 40 42 44 Frequency [GHz] 46 48 50 6 4 2 0 0 35 36 37 38 Frequency[GHz] 39 40 41 35 37 39 41 Frequency [GHz] 43 45 Figure 4. Typical noise figure Figure 3. Typical output power (P-1 and P-3) vs. frequency 40 0 SCL=18[dBm] SCL=12dBm] SCL=4[dBm] -20 35 Po[dBm], and, PAE[%] -10 850 Pout(dBm) PAE[%] Id(total) 30 800 750 25 700 20 650 15 600 10 550 5 500 -60 0 450 -70 34 -5 -30 -40 -50 35 36 37 38 Frequency [GHz] 39 40 41 Figure 5. Typical third order inter-modulation product level vs. frequency at different single carrier output level (SCL) -25 -20 -15 -10 -5 Pin [dBm] 0 5 10 400 Figure 6. Typical output power, PAE, and total drain current versus Input power at 40GHz Ids [mA] 34 Relative IM3 Level [dBc] 32 Figure 2. Typical return Loss (input and output) 10 5 4 -15 30 10 S11[dB] S22[dB] -10 50 Figure 1. Typical gain and reverse Isolation P1, P3 [dBm], PAE[%] Return Loss [dB] 20 S12 [dB] S21[dB] 25 -30 480 -20 -40 470 -50 465 -60 -70 -80 0 2 4 6 8 475 -40 470 -50 465 460 -60 460 455 -70 455 450 -80 IM3_h [dBc] IM3_l [dBc] Ids_total 490 0 485 -10 480 -20 -30 475 -40 470 -50 465 -60 -70 -80 0 2 4 6 8 -70 455 450 10 12 14 16 18 20 22 Po [dBc, SCL] -80 0 4 6 8 450 10 12 14 16 18 20 22 Po [dBc, SCL] 0 485 -10 480 -20 490 IM3_h [dBc] IM3_l [dBc] Ids_total 485 480 -30 475 -40 470 -50 465 460 -60 460 455 -70 455 450 -80 -50 465 -60 -70 10 12 14 16 18 20 22 Po [dBc, SCL] 2 Figure 10. Typical IM3 level and Ids vs. single carrier output level at 38GHz Ids [mA] IM3 Level [dBc] 480 455 Figure 11. Typical IM3 level and Ids vs. single carrier output level at 39GHz 5 485 460 470 8 IM3_h [dBc] IM3_l [dBc] Ids_total -60 -40 6 490 460 475 4 450 465 490 2 10 12 14 16 18 20 22 Po [dBc, SCL] -50 IM3_h [dBc] IM3_l [dBc] Ids_total 0 8 470 -30 -80 6 -40 0 -20 4 475 Figure 9. Typical IM3 level and Ids vs. single carrier output level at 37GHz -10 2 -30 Ids [mA] IM3 Level [dBc] -20 0 Figure 8. Typical IM3 level and Ids vs. single carrier output level at 36GHz Figure 7. Typical IM3 level and Ids vs. single carrier output level at 35GHz -10 480 -30 10 12 14 16 18 20 22 Po [dBc, SCL] 0 485 Ids [mA] 475 490 IM3_h [dBc] IM3_l [dBc] Ids_total Ids [mA] -30 IM3 Level [dBc] -10 IM3 Level [dBc] IM3 Level [dBc] -20 485 IM3 Level [dBc] -10 0 Ids [mA] 490 IM3_h [dBc] IM3_l [dBc] Ids_total Ids [mA] 0 450 0 2 4 6 8 10 12 14 16 18 20 22 Po [dBc, SCL] Figure 12. Typical IM3 level and Ids vs. single carrier output level at 40GHz Typical over temperature dependencies (Vdd =5 V, Id(q) = 0.45 A, Zin = Zout = 50 ) 0 S21[dB] S11[dB] -5 -10 -15 S11_25 S11_-40 S11_85 -20 25 30 35 40 Frequency[GHz] 45 S22_25 S22_-40 S22_85 P-1 [dBm] S22[dB] -10 -15 -20 30 35 40 Frequency[GHz] Figure 15. Typical S22 over temperature 6 30 35 40 Frequency[GHz] 45 50 Figure 14. Typical Gain over temperature 0 25 S21_25 S21_-40 S21_85 25 50 Figure 13. Typical S11 over temperature -5 34 32 30 28 26 24 22 20 18 16 14 12 10 45 50 30 29 28 27 26 25 24 23 22 21 20 P-1_-40deg P-1_25deg P-1_85deg 35 36 37 38 39 Frequency [GHz] Figure 16. Typical P1 over temperature 40 41 42 Typical Scattering Parameters [1], (TA = 25°C, Vd =5 V, ID = 0.45A, Zin = Zout = 50 ) S11 S11 S11 S21 S21 S21 S12 S12 S12 S22 S22 S22 Freq [dB] Mag. Ang. [dB] Mag. Ang. [dB] Mag. Ang. [dB] Mag. Ang. 20 -1.44 0.85 -29.26 -37.16 0.01 65.56 -63.28 6.86E-04 -177.94 -1.19 0.87 18.22 21 -1.63 0.83 -120.63 -29.23 0.03 -99.35 -54.49 1.89E-03 -40.70 -1.24 0.87 -78.33 22 -2.17 0.78 156.73 -28.37 0.04 118.06 -48.78 3.64E-03 -139.74 -1.40 0.85 -163.84 23 -2.54 0.75 82.21 -28.13 0.04 5.08 -43.64 6.58E-03 121.50 -1.70 0.82 118.20 24 -2.57 0.74 8.22 -25.49 0.05 -99.30 -46.26 4.87E-03 9.57 -2.03 0.79 42.54 25 -2.37 0.76 -72.68 -22.13 0.08 153.82 -48.56 3.73E-03 -50.55 -2.09 0.79 -37.40 26 -2.20 0.78 -157.58 -18.74 0.12 51.99 -49.99 3.17E-03 -95.33 -1.78 0.81 -125.00 27 -2.63 0.74 119.20 -15.74 0.16 -57.08 -47.44 4.24E-03 -162.87 -1.98 0.80 144.30 28 -3.60 0.66 38.52 -12.05 0.25 -151.97 -46.99 4.47E-03 129.19 -2.76 0.73 58.95 29 -4.45 0.60 -49.91 -9.02 0.35 103.37 -44.13 6.22E-03 52.66 -4.18 0.62 -26.18 30 -4.16 0.62 -146.99 -3.43 0.67 7.49 -42.45 7.54E-03 -34.31 -4.71 0.58 -119.60 31 -3.33 0.68 125.31 1.38 1.17 -104.04 -44.38 6.04E-03 -132.01 -4.83 0.57 145.56 32 -3.33 0.68 49.43 6.37 2.08 144.41 -48.04 3.96E-03 153.99 -6.19 0.49 64.25 33 -4.98 0.56 -26.60 11.65 3.83 27.95 -46.59 4.68E-03 77.28 -10.13 0.31 -4.65 34 -11.74 0.26 -113.03 17.79 7.75 -106.88 -49.08 3.51E-03 -10.06 -15.14 0.18 -19.11 35 -30.25 0.03 24.52 21.45 11.82 106.76 -55.81 1.62E-03 -98.22 -14.40 0.19 -72.40 36 -17.57 0.13 -87.74 23.79 15.47 -40.53 -60.09 9.90E-04 -129.51 -18.76 0.12 -108.00 37 -13.79 0.20 -164.97 23.65 15.22 162.26 -59.53 1.06E-03 -76.94 -17.05 0.14 132.26 38 -14.61 0.19 77.57 21.23 11.52 23.42 -59.27 1.09E-03 -175.64 -13.57 0.21 -1.64 39 -16.58 0.15 -61.70 19.06 8.98 -108.07 -51.41 2.69E-03 134.13 -9.87 0.32 -82.52 40 -17.09 0.14 -137.82 18.71 8.62 124.45 -52.74 2.31E-03 42.42 -9.66 0.33 -154.98 41 -9.75 0.33 131.82 16.44 6.64 -23.69 -67.37 4.28E-04 -5.49 -13.64 0.21 144.48 42 -9.63 0.33 43.60 12.18 4.07 -148.68 -54.05 1.98E-03 -18.28 -12.48 0.24 130.71 43 -15.69 0.16 -22.56 10.60 3.39 91.90 -51.44 2.68E-03 -84.16 -9.78 0.32 63.32 44 -10.14 0.31 -72.86 10.82 3.47 -51.05 -51.69 2.60E-03 -171.27 -9.37 0.34 -28.63 45 -9.64 0.33 -173.38 6.05 2.01 143.60 -46.06 4.98E-03 101.90 -8.56 0.37 -145.17 46 -10.16 0.31 117.40 -2.18 0.78 -7.04 -41.86 8.08E-03 -1.64 -7.06 0.44 107.01 47 -9.25 0.34 39.30 -12.11 0.25 -134.88 -38.15 1.24E-02 -106.69 -6.70 0.46 14.48 48 -9.23 0.35 -51.59 -20.73 0.09 124.23 -35.98 1.59E-02 164.73 -6.62 0.47 -69.34 49 -7.92 0.40 -143.04 -26.43 0.05 41.29 -31.88 2.55E-02 81.22 -6.92 0.45 -152.30 50 -7.21 0.44 132.95 -28.47 0.04 -47.16 -31.37 2.70E-02 -21.85 -7.65 0.41 127.63 Note: 1. Data obtained from 2.4-mm connecter based modules, and this data is including connecter loss, and board loss. The measurement reference plane is at the RF connectors. 7 Biasing and Operation. Recommended quiescent DC bias condition for optimum power and linearity performances is Vd=5 volts with Vg (-1V) set for Id=450 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp (-2V). Vg 0.1 PF 100 pF 0.1 PF 100 pF 1 A typical DC biasing connection is shown in Figure 17. Vg and Vd can be biased from either side. The RF input port is connected internally to ground; therefore, an input decoupling capacitor is needed if the preceding output stage has DC present. The RF output is DC decoupled internally. No ground wired are needed since ground connections are made with plated through-holes to the backside of the device. 3 2 RF Input RF Output 8 4 7 5 6 100 pF 0.1 PF Figure 17. Schematic and recommended assemble example Note: No RF performance degradation is seen due to ESD up to 150V HBM and 40V MM. The DC characteristics in general show increased leakage at higher ESD discharge voltages. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols. 8 Notes: 1. Vd may be biased from either side. 2. Vg may be biased from either side. Vd AMMP-64xx Part Number Ordering Information Devices Per Container Container Part Number AMMP-6441-BLKG 10 Antistatic bag AMMP-6441-TR1G 100 7” Reel AMMP-6441-TR2G 500 7” Reel Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the “x” indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 “×” Note: EU RoHS compliant under exemption clause of “lead in electronic ceramic parts (e.g. piezoelectronic devices)” For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. AV02-1908EN - June 21, 2011 Polybrominated diphenylether (PBDE) PBDE
AMMP-6441-TR2G 价格&库存

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