ARE1-8F30-00000

Data Sheet ARE1-xxx0-00000 High Power Infrared Emitting Diodes Description The Broadcom® high-power IR LEDs are available in 850-nm and 940-nm peak wavelength ranges, appropriate for specific devices, such as infrared illumination, surveillance systems, CCTV, and gesture recognition. Packaged in a 3.85 mm × 3.85 mm surface-mount platform, together with viewing angles of 90° and 150° lens optics options, the high-power IR LEDs are suitable for a wide variety of applications. The package is compatible with the reflow soldering process. To facilitate easy pick-and-place assembly, the LEDs are packed in tape and reel. Broadcom Features        Available in peak wavelengths: 850 nm and 940 nm High radiant intensity High radiant power Low forward voltage Typical viewing angles: 90° and 150° Compatible with industrial reflow soldering process MSL 3 Applications   Infrared illumination for cameras Surveillance systems ARE1-xxx0-DS103 October 7, 2019 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Figure 1: Package Drawing Viewing Angle 90° (ARE1-89x0, ARE1-99x0) Viewing Angle 150° (ARE1-8Fx0, ARE1-9Fx0) Cathode Cathode Anode Anode ESD protection device ESD protection device NOTE: 1. All dimensions in millimeters (mm). 2. Tolerance is ± 0.1 mm unless otherwise specified. Broadcom ARE1-xxx0-DS103 2 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Device Selection Guide (TJ = 25°C, IF = 1A) a,b Part Number Radiant Flux, Φe Radiant Intensity, Ie (mW/sr) Peak Wavelength, peak (nm) (mW)c Viewing Angle, 2θ½ (°) d Min. Max. Typ. Typ. ARE1-89C0-00000 850 160 450 685 90 ARE1-89D0-00000 850 250 600 800 90 ARE1-8930-00000 850 630 1000 1340 90 ARE1-8FC0-00000 850 100 350 630 150 ARE1-8FD0-00000 850 150 400 800 150 ARE1-8F30-00000 850 200 500 1270 150 ARE1-99D0-00000 940 160 450 590 90 ARE1-9930-00000 940 320 850 935 90 ARE1-9F30-00000 940 160 400 970 150 a. The radiant intensity, Ie is measured at the mechanical axis of the package and it is tested with a single current pulse condition (tp = 10 ms). The actual peak of the spatial radiation pattern may not be aligned with the axis. b. Tolerance is ±15%. c. The radiant flux,Φe is the total flux output as measured with an integrating sphere at a single current pulse condition (tp = 10 ms). d. θ½ is the off-axis angle where the luminous intensity is half of the peak intensity. Absolute Maximum Ratings Parameters ARE1-8xC0 ARE1-8xD0 ARE1-8x30 ARE1-9xD0 ARE1-9x30 Units DC Forward Currenta 1000 1000 1000 1000 1000 mA Peak Forward Currentb, c 3000 3000 3000 3000 3000 mA Power Dissipation 2500 2500 3600 2500 3400 mW Reverse Voltage LED Junction Temperature Not designed for reverse bias operation 115 145 115 115 115 °C Operating Temperature Range –40 to +85 –40 to +100 –40 to +85 –40 to +85 –40 to +85 °C Storage Temperature Range –40 to +100 –40 to +100 –40 to +100 –40 to +100 –40 to +100 °C a. Derate linearly as shown in Figure 8, Figure 9, Figure 10, and Figure 11. b. Duty factor = 10%, frequency = 1kHz. c. Solder point temperature, TS = 25°C. Broadcom ARE1-xxx0-DS103 3 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Optical and Electrical Characteristics (TJ = 25°C) Parameters Min. Typ. Max. Units Test Condition IF = 1A V Forward Voltage, VFa 1.4 1.4 2.7 1.4 2.5 ARE1-8xC0 ARE1-8xD0 ARE1-8x30 ARE1-9xD0 ARE1-9x30 1.8 1.8 3.2 1.8 3.0 2.5 2.5 3.6 2.5 3.4 Not designed for reverse bias Reverse Voltage, VR — Thermal Resistance, RθJ-Sb 10 — °C/W LED junction to solder point a. Forward voltage tolerance is ±0.1V. b. Thermal resistance from the LED junction to the solder point. Part Numbering System A R E Code 1 - x1 x2 x3 0 - Description 0 0 0 0 0 Option x1 Peak Wavelength 8 9 940 nm x2 Viewing Angle 9 90° F 150° x3 Brightness Option C Single junction normal brightness D Single junction high brightness 3 Double junction high brightness 850 nm Part Number Example ARE1-89D0-00000 x 1: 8 — Peak wavelength 850 nm x 2: 9 — Viewing angle typical 90° x 3: D — Single junction high brightness Broadcom ARE1-xxx0-DS103 4 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Figure 2: Spectral Power Distribution 1.0 1000 0.9 900 850nm 0.7 0.6 800 FORWARD CURRENT - mA 0.8 RELATIVE INTENSITY Figure 3: Forward Current vs. Forward Voltage 940nm 0.5 0.4 0.3 0.2 500 400 300 200 100 0.0 0 380 440 500 560 620 680 740 800 860 920 980 1,040 WAVELENGTH - nm Figure 4: Relative Radiant Flux vs. Mono Pulse Current 0.0 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ARE1-8xD0 ARE1-9xD0 2.5 ARE1-8xC0 ARE1-8x30 2.0 ARE1-9x30 tp = 100μs 1.5 1.0 0.5 0.0 0 500 1000 1500 2000 MONO PULSE CURRENT -mA 2500 1.0 2.0 3.0 FORWARD VOLTAGE - V 4.0 5.0 Figure 5: Relative Light Output vs. Junction Temperature ARE1-8x30 RELATIVE LIGHT OUTPUT - % (NORMALIZED AT 25°C) RELATIVE RADIANT FLUX (NOMRLAIZED @1000mA) 3.0 3000 Figure 6: Forward Voltage Shift vs. Junction Temperature ARE1-8xD0 (TJmax 145°C) ARE1-9xD0 (TJmax 115°C) ARE1-8xC0 ARE1-9x30 -50 -25 0 25 50 75 100 125 JUNCTION TEMPERATURE, TJ - °C 150 175 Figure 7: Radiation Pattern 0.50 1.0 ARE1-9x30 0.40 0.9 ARE1-8x30 0.30 ARE1-9xD0 0.20 ARE1-8xD0 0.10 150° 0.8 RELATIVE INTENSITY FORWARD VOLTAGE SHIFT - V (NORMALIZED AT 25°C) ARE1-8x30 ARE1-9x30 600 0.1 ARE1-8xC0 0.00 -0.10 -0.20 0.7 0.6 0.5 0.4 90° 0.3 0.2 -0.30 0.1 -0.40 0.0 -50 Broadcom ARE1-8xC0 ARE1-8xD0 ARE1-9xD0 700 -25 0 25 50 75 100 JUNCTION TEMPERATURE, TJ - °C 125 150 -90 -60 -30 0 30 60 ANGULAR DISPLACEMENT - DEGREE 90 ARE1-xxx0-DS103 5 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Figure 8: Maximum Forward Current vs. Ambient Temperature for ARE1-8xC0 and ARE1-9xD0 Figure 9: Maximum Forward Current vs. Ambient Temperature for ARE1-8xD0 1200 MAX ALLOWABLE DC CURRENT - mA MAX ALLOWABLE DC CURRENT - mA 1200 1000 800 600 RșJ-A = 25°C/W RșJ-A = 35°C/W RșJ-A = 45°C/W 400 200 1000 800 400 200 0 0 0 20 40 60 80 AMBIENT TEMPERATURE, TA - °C 100 Figure 10: Maximum Forward Current vs. Ambient Temperature for ARE1-8x30 0 40 60 80 100 AMBIENT TEMPERATURE, TA - °C 120 1200 MAX ALLOWABLE DC CURRENT - mA MAX ALLOWABLE DC CURRENT - mA 20 Figure 11: Maximum Forward Current vs. Ambient Temperature for ARE1-9x30 1200 1000 800 RșJ-A = 20°C/W RșJ-A = 25°C/W RșJ-A = 30°C/W 600 400 200 1000 800 RșJ-A = 20°C/W RșJ-A = 25°C/W RșJ-A = 30°C/W 600 400 200 0 0 0 20 40 60 80 AMBIENT TEMPERATURE, TA - °C 100 Figure 12: Maximum Forward Current vs. Solder Point Temperature 0 20 40 60 80 AMBIENT TEMPERATURE, TA - °C 100 Figure 13: Recommended Soldering Land Pattern 1.0 120 0 MAX ALLOWABLE DC CURRENT - mA RșJ-A = 25°C/W RșJ-A = 35°C/W RșJ-A = 45°C/W 600 0.5 100 0 ARE1-8xC0 ARE1-9xD0 800 600 2.8 400 ARE1-8x30 ARE1-9x30 200 ARE1-8xD0 2.8 0 0 20 40 60 80 100 SOLDER POINT TEMPERATURE, TS - °C Broadcom 120 NOTE: All dimensions are in millimeters (mm). ARE1-xxx0-DS103 6 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Figure 14: Carrier Tape Dimensions NOTE: All dimensions in millimeters (mm). Figure 15: Reel Dimensions 14.4 Typ. Ø 178.0 ± 2.0 Ø 60.0 ± 1.0 PRODUCT LABEL Ø13.0 Typ. USER FEED DIRECTION NOTE: Broadcom All dimensions are in millimeters (mm). ARE1-xxx0-DS103 7 ARE1-xxx0-00000 Data Sheet High Power Infrared Emitting Diodes Precautionary Notes Reflow Soldering Do not perform reflow soldering more than twice. Observe necessary precautions of handling moisture-sensitive devices as stated in Handling of Moisture-Sensitive Devices. Do not apply any pressure or force on the LED during reflow and after reflow when the LED is still hot.   Figure 16: Recommended Lead-Free Reflow Soldering Profile TEMPERATURE 10 to 30 SEC. 255 – 260°C 217°C 200°C cleaning, rub the surface gently without putting too much pressure on the silicone. Ultrasonic cleaning is not recommended. Handling of Moisture-Sensitive Devices This product has a Moisture Sensitive Level 3 rating per JEDEC J-STD-020. Refer to Broadcom Application Note AN5305, Handling of Moisture Sensitive Surface Mount Devices, for additional details and a review of proper handling procedures. Before use:  3°C/SEC. MAX. 6°C/SEC. MAX. 150°C 3°C/SEC. MAX.  100 SEC. MAX. 60 – 120 SEC. TIME An unopened moisture barrier bag (MBB) can be stored at