ASDL-5270-D31

ASDL-5270 High-Performance Photodiode in T-¾ Package Data Sheet Description ASDL-5270 is a Silicon PIN Photodiode encapsulated in dark T-1¾ package. The added feature of a dark tint acts as an optical filter to reduce effects of ambient light from interfering with the Infrared signal. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and fast response time. Features • T-1¾ package • Fast Response Time • Low Dark Current • High Sensitivity • Low junction capacitance • Wide Viewing Angle • Lead Free & ROHS Compliant • Available in Tape & Reel Applications • Photo-Interrupters • High Speed IR data communication • Industrial Electronics & Equipment • Consumer Electronics (Optical Mouse, Remote Control, Printer etc)  Ordering Information Part Number ASDL-570-D ASDL-570-D3 Lead Form Straight Color Dark Packaging Tape & Reel Bulk Shipping Option 4000 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice.  Absolute Maximum Ratings at TA=25°C Parameter Power Dissipation Reverse Voltage (Ir=00uA) Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.063”) From Body ] Symbol PDISS VR TO TS TJ 60°C for 5 seconds -40 -55 Min. Max 50 30 85 00 0 Unit mW V °C °C °C Electrical Characteristics at 25°C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Symbol VF VBR ID CO 5 30 30 Min. Typ.  Max. .3 Unit V V nA pF Condition IF = 50mA IR= 00uA Ee = 0mW/cm VR=0V Ee=0mW/cm Vr = 3V F = MHZ Ee = 0mW/cm l = 940nm Ee=0.5mW/cm Open Circuit Voltage Thermal Resistance, Junction to Pin VOC RqJP - 350 375 mV °C/W Optical Characteristics at 25°C Parameter Photocurrent Symbol IPH Min. 8 Typ. 3 Max. Unit uA Condition Ee = 0.mW/cm l = 940nm Vr = 5V l = 940nm Vr = 5V Radiant Sensitive Area Absolute Spectral Sensitivity Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time A S q/ lPK Δl tr 700 .55 0.6 60 900 900 50 00 mm A/W Deg nm nm ns VR = 0V l = 850nm RL = K W VR = 0V l = 850nm RL = K W Fall Time tf 50 ns 3 Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) pA 4000 100 pF 3000 Dark Current ID Capacitance Ct 80 60 2000 40 1000 20 0 0 5 10 15 20 V 0 10 -2 10 -1 10 0 10 1 10 V 2 Reverse Voltage VR Reverse Voltage VR Figure 1. DARK CURRENT VS. REVERSE VOLTAGE TA=25°C, Ee=0 mW/cm 2 Figure 2. CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ; Ee=0mW/cm nA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -1 103 10 Dark Current ID 2 Is amb Is 25 o Photocurrent 10 1 10 0 -20 0 20 40 60 80 C o 0 20 40 60 80 100 C o Ambient Temperature Ambient Temperature Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE Figure 4. DARK CURRENT AMBIENT TEMPERATURE VR=10, Ee=0mW/cm 2 4 Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Cont. 100 % 10 3 uA Relative Spectral Sensitivity 80 10 60 Photocurrent Ip 2 10 1 40 20 10 0 0 700 800 900 1000 1100 Wavelength 10 -1 10 -2 10 -1 10 0 10 1 mW 2 CM Irradiance Ee Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH Figure 6. PHOTOCURRENT VS IRRADIANCE λ = 940 nm 0 o 10 o 20 o 175 Total Power Dissipation mW o Relative Sensitivity 30 1.0 0.9 0.8 0.7 0.6 40 50 60 80 0.5 0.3 0 0.2 0.4 o 125 o o 75 o o 25 0 -40 -20 o 100 0 20 40 60 80 100 C Ambient Temperature Figure 7. SENSITIVITY DIAGRAM Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 007 Avago Technologies Limited. All rights reserved. AV0-000EN - January 8, 007