ASDL-6620

ASDL-6620 Silicon NPN Phototransistor in T- Package Data Sheet Description ASDL-6620 is a silicon phototransistor in a standard T-1 package with options of clear and dark package. It has high sensitivity, fast response time and low dark current. Collector is denoted by a flat on the packaging diagram and the shorter of the two leads. This device matches with infrared emitter ASDL-4671 and is ideal for low cost, high volume applications. Features • T-1 package • Option of Dark Lens that remove visible light • Option of Clear Lens • High Speed • High Sensitivity • Narrow Viewing Angle Applications • Suitable for detectors of Infrared Applications • Smoke Detector • Alarm System • Photo Interrupter • Industrial Equipment  Ordering Information Part Number ASDL-660-C ASDL-660-C3 ASDL-660-D ASDL-660-D3 Lead Form Straight Color Clear Dark Packaging Tape & Reel Bulk Tape & Reel Bulk Shipping Option 4000pcs 8000pcs / Carton 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice.  Absolute Maximum Ratings at TA=25°C Parameter Power Dissipation Collector Emitter Voltage Emitter Collector Voltage Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.063”) From Body ] Symbol PDISS VCEO VECO TO TS TJ 60°C for 5 seconds -40 -55 Min. Max 00 30 5 85 00 0 °C Unit mW V V °C °C °C Electrical Characteristics at 25°C Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Emitter Saturation Voltage Collector Dark Current Thermal Resistance, Junction to Pin Symbol V(BR)CEO V(BR)ECO VCE(SAT) ICEO RqJP 350 Min. 30 5 0.4 00 Typ. Max. Unit V V V nA °C/W Condition Ic= mA Ee = 0mW/cm Ie = 00µA Ee = 0mW/cm Ie = 0.5mA Ee = mW/cm VCE=0V Ee=0mW/cm Optical Characteristics at 25°C Parameter Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time Symbol θ/ λPK Δλ tr 400 700 Min. Typ. 0 900 900 900 0 00 00 Max. Unit Deg nm nm nm µs Clear Dark VCC = 5V Ic = mA RL = KΩ VCC = 5V Ic = mA RL = KΩ VCE = 5V Ee = mW/cm λ = 940nm Condition Fall Time tf 0 µs On State Collector Current IC(ON) .6 9.6 mA 3 Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Collector Power Dissipation Pc(mW) 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 Iceo-Collector Dark Current- A 100 10 1 0.1 0.01 0 0 40 80 120 o Ta-Ambient Temperature- C FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE Ta-Ambient Temperature- o C FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 Tr Tf-Rise and Fall Time- Relative Collector Current Vcc=5V VRL=1V F =100Hz PW =1ms tf tr s 4.0 3.0 2.0 1.0 0 Vce= 5V 0 2 4 6 8 10 0 1 2 3 4 2 5 RL-Load Resistance-K FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE Ee-Irradiance-mW/cm FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0 o 10 o 20 o 30 o Relative Sensitivity 1.0 0.9 0.8 0.7 40 50 60 o o o 70 o 80 o 90 0.5 0.3 0.1 0.2 0.4 0.6 o FIGURE 5. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 007 Avago Technologies Limited. All rights reserved. AV0-003EN - January , 007