ASDL-6770-C41

ASDL-6770 High Performance Silicon NPN Phototransistor in Side Look Package Data Sheet Description ASDL-6770 is a silicon phototransistor encapsulated in clear molded Side Look package. It has high sensitivity with low dark current and fast response time. Collector is denoted by a flat on the packaging diagram and the shorter of the two leads. This device matches with infrared emitter ASDL-4770 and is ideal for low cost, high volume applications. Features • Clear Side Look Package • Wide spectral response • High Sensitivity • High Speed • Low Dark Current • Narrow Viewing Angle • Low Cost • Lead Free & ROHS Compliant • Available in Tape & Reel Applications • Detector in Consumer Electronics • Detector Industrial Electronics & Equipment • Coin counters • Position sensing • IR Data Communication • Photo Interrupter  Ordering Information Part Number ASDL-6770-C ASDL-6770-C4 Lead Form Straight Color Clear Packaging Tape & Reel Bulk Shipping Option 4000pcs 0Kpcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Lead spacing is measured where leads emerge from package 4. Specifications are subject to change without notice.  Absolute Maximum Ratings at TA=25°C Parameter Power Dissipation Collector Emitter Voltage Emitter Collector Voltage Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.06”) From Body ] Symbol PDISS VCEO VECo TO TS TJ 60°C for 5 seconds -40 -55 Min. Max 00 0 5 85 00 0 Unit mW V V °C °C °C Electrical Characteristics at 25°C Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Emitter Saturation Voltage Collector Dark Current Thermal Resistance, Junction to Pin Symbol V(BR)CEO V(BR)ECO VCE(SAT) ICEO Rqjp 50 Min. 0 5 0.4 00 Typ. Max. Unit V V V nA °C/W Condition Ic= mA Ee = 0mW/cm Ie = 00µA Ee = 0mW/cm Ic = 0.mA Ee = mW/cm VCE=0V Ee=0mW/cm Optical Characteristics at 25°C Parameter Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time Symbol q/ λPK Δλ tr 400 Min. Typ. 40 900 900 0 00 Max. Unit Deg nm nm µs Vcc = 5V Ic = mA RL = KΩ Vcc = 5V Ic = mA RL = KΩ VCE = 5V Ee = mW/cm λ = 940nm Condition Fall Time tf 5 µs On State Collector Current IC(ON) .04 .40 mA  Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Collector Power Dissipation Pc(mW) 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 Iceo-Collector Dark Current- A 100 10 1 0.1 0.01 0 0 40 80 120 Ta-Ambient Temperature- o C FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE Ta-Ambient Temperature- o C FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 Tr Tf-Rise and Fall Time- Relative Collector Current Vcc=5V VRL=1V F =100Hz PW =1ms s 4.0 3.0 2.0 1.0 0 Vce= 5V 0 2 4 6 8 10 0 1 2 3 4 2 5 RL-Load Resistance-K FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE Ee-Irradiance-mW/cm FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0 o 10 o 20 o 30 o Relative Sensitivity 1.0 0.9 0.8 0.7 40 50 60 o o o 70 o 80 o 90 0.5 0.3 0.1 0.2 0.4 0.6 o FIGURE 5. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 007 Avago Technologies Limited. All rights reserved. AV0-004EN - January , 007