Data Sheet
ASSR-601JV, ASSR-601JT
Automotive Photo MOSFET with R2Coupler™
Isolation
Description
Features
The Broadcom® ASSR-601JV/JT is a high-voltage Photo
MOSFET that is designed for automotive applications.
ASSR-601JV/JT consists of an AlGaAs infrared lightemitting diode (LED) input stage optically coupled to a highvoltage output detector circuit. The detector consists of a
high-speed photovoltaic diode array and driver circuitry to
switch on/off two discrete high-voltage MOSFETs. The
Photo MOSFET turns on (contact closes) with a minimum
input current of 7 mA through the input LED. The Photo
MOSFET turns off (contact opens) with an input voltage of
0.4V or less.
The ASSR-601JV/JT is equivalent to 1FormA
Electromechanical Relays (EMR) and is available in 16-pin
SOIC package.
The Broadcom R2Coupler™ provides reinforced insulation
and reliability that delivers safe signal isolation critical in
automotive and high temperature industrial applications.
Compact solid-state bidirectional signal switch
Qualified to AEC-Q101 test guidelines
Automotive temperature range:
– TA = –40°C to +105°C for ASSR-601JV
– TA = –40°C to +125°C for ASSR-601JT
Breakdown voltage, BVDSS: 1500V at IDSS = 250 µA
Avalanche rated MOSFETs
Low off-state leakage:
– IOFF < 1 µA at VDS = 1000V for ASSR-601JV
– IOFF < 5 µA at VDS = 1000V for ASSR-601JT
On-resistance, RDS(ON) < 250Ω at ILOAD = 10 mA
Turn on time: TON < 4 ms
Turn off time: TOFF < 0.5 ms
Package: 300 mil SO-16
Creepage and clearance ≥ 8 mm (input-output)
Creepage > 5 mm (between drain pins of MOSFETs)
Safety and regulatory approvals:
– IEC/EN/DIN EN 60747-5-5
– Maximum working insulation voltage 1414 VPEAK
– 5000 VRMS for 1 minute per UL1577
– CSA component acceptance
Applications
Broadcom
Battery insulation resistance measurement/leakage
detection
BMS flying capacitor topology for sensing batteries
ASSR-601Jx-DS104
November 21, 2019
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Functional Diagram
Truth Table
Opto-Isolation
LED
Output
NC
D1
Off
Open
NC
D1
On
Close
NC
Turn-Off
Circuit
AN
CA
NC
NC
D2
NC
D2
Pin Description
Opto-Isolation
1
16
D1
Pin Number
Pin Name
NC
2
15
D1
NC
1, 2, 6, 7, 8
NC
No connection.
3
AN
3
NC
4
Do not connect (internally connected
to Pin 5).
CA
5
4
AN
Anode.
NC
6
5
CA
Cathode.
NC
7
10
D2
9, 10
D2
Drain 2 (internally connected).
NC
8
9
D2
15, 16
D1
Drain 1 (internally connected).
Turn-Off
Circuit
NC
Description
Ordering Information
Specify part number followed by option number.
Option
Part Number (RoHS Compliant)
ASSR-601JV
-000E
Package
Surface
Mount
SO-16
X
-500E
ASSR-601JT
-000E
-500E
X
SO-16
Tape & UL 5000 Vrms /
Reel 1 Minute Rating
X
X
X
X
IEC 60747-5-5
EN/DIN EN 60747-5-5
Quantity
X
X
45 per tube
X
X
850 per reel
X
X
45 per tube
X
X
850 per reel
To order, choose a part number from the part number column and combine with the desired option from the option column
to form an order entry.
Example 1:
ASSR-601JT-500E to order product of SO-16 Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN
60747-5-5 Safety Approval in RoHS compliant.
Option data sheets are available. Contact your Broadcom sales representative or authorized distributor for information.
Broadcom
ASSR-601Jx-DS104
2
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Package Outline Drawings (SO-16)
0.457
(0.018)
BSC
1.270
(0.050)
RECOMMENDED LAND PATTERN
PART NUMBER
DATECODE
RoHS-COMPLIANCE
INDICATOR
A 601JX
YYWW
EE
11.634
(0.458)
7.493 +0.254 / -0.127
(0.295 +0.010 / -0.005)
EXTENDED
Datecode for
Lot tracking
2.160
(0.086)
0.635min.
(0.025)
10.363 +0.254 / -0.127
(0.408 +0.010 / -0.005)
1.270
(0.050)
8.763 + 0.254
(0.345 + 0.010)
3.505 + 0.127
(0.138 + 0.005)
0.203 + 0.102
(0.008 + 0.004)
STANDOFF
(0 – 8o)
0.750 + 0.254
(0.030 + 0.010)
0.254 + 0.012
(0.010 + 0.004)
10.363 + 0.254
(0.408 + 0.010)
NOTE:
Dimensions in millimeters (inches).
NOTE:
1. Lead coplanarity = 0.10 mm (0.004 inches) maximum.
2. Floating lead protrusion = 0.254 mm (0.010 inches) maximum.
3. Mold Flash on each side = 0.127 mm (0.005 inches) maximum.
Recommended Pb-Free IR Profile
Recommended reflow condition as per JEDEC Standard J-STD-020 (latest revision).
NOTE:
Broadcom
Non-halide flux should be used.
ASSR-601Jx-DS104
3
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Regulatory Information
The ASSR-601JV and ASSR-601JT are approved by the following organizations:
UL/cUL
IEC/EN/DIN EN 60747-5-5
UL 1577, component recognition program up to VISO = 5 kVRMS
Approved under CSA Component Acceptance Notice #5.
IEC 60747-5-5
EN 60747-5-5
DIN EN 60747-5-5
Insulation and Safety Related Specifications
Parameter
Symbol
ASSR-601JV/JT
Unit
Conditions
Minimum External Air Gap
(Clearance)
L(101)
8.3
mm
Measured from input terminals to output terminals,
shortest distance through air.
Minimum External Tracking
(Creepage)
L(102)
8.3
mm
Measured from input terminals to output terminals,
shortest distance path along body.
0.5
mm
Through insulation distance conductor to conductor,
usually the straight line distance thickness between
the emitter and detector.
>600
V
Minimum Internal Plastic Gap (Internal
Clearance)
Tracking Resistance (Comparative
Tracking Index)
CTI
IEC 60695.
IEC/EN/DIN EN 60747-5-5 Insulation Related Characteristic
Description
Symbol
Installation classification per DIN VDE 0110/1.89, Table 1
For rated mains voltage < 600 VRMS
Climatic Classification
40/125/21
Pollution Degree (DIN VDE 0110/1.89)
Input to Output Test Voltage, Method b
VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec
Unit
I - III
I - II
For rated mains voltage < 1000 VRMS
Maximum Working Insulation Voltage
Characteristic
2
VIORM
1414
VPEAK
VPR
2651
VPEAK
VPR
2262
VPEAK
VIOTM
6000
VPEAK
TS
175
400
1200
°C
mA
mW
>109
Ω
Partial Discharge < 5 pC
Input to Output Test Voltage, Method a
VIORM x 1.6 = VPR, Type and sample test, tm = 10 sec,
Partial Discharge < 5 pC
Highest Allowable Overvoltage
(Transient Overvoltage, tini = 60 sec)
Safety Limiting Values
(Maximum values allowed in the event of a failure)
Ambient Safety Temperature
Input Current
Output Power
Insulation Resistance at TS, VIO = 500V
Broadcom
IS,INPUT
PS,OUTPUT
RS
ASSR-601Jx-DS104
4
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Absolute Maximum Ratings
All specifications at TA= 25°C unless otherwise specified.
Parameter
Symbol
Min.
Max.
Unit
Storage Temperature
TS
–55
150
°C
Operating Ambient Temperature
TA
–40
125
°C
Junction Temperature
TJ
–40
150
°C
IF(avg)
—
30
mA
TA= –40°C to +125°C
IF(surge)
—
60
mA
TA= –40°C to +125°C
IFP
—
1
A
f = 100 Hz,
duty cycle = 0.1%
Reversed Input Voltage
BVR
—
6
V
TA = –40°C to +125°C
Input Power Dissipation
PIN
—
100
mW
Output Load Current
IO
—
50
mA
Output Avalanche Current
IAV
—
0.6
mA
Output Power Dissipation
Po
—
1000
mW
Temperature
—
260
°C
Time
—
10
s
Input Current
Average
Surge (50% duty
cycle)
Peak Transient Input Current
Lead Soldering Cycle
Solder Reflow Temperature Profile
Note
tm = 1 min,
duty cycle = 0.1%,
cumulative of 5 mins over
lifetime
Recommended reflow condition as per JEDEC Standard J-STD-020 (latest revision).
ESD Rating
Parameter
Level
Note
Human Body Model
H2 (2000V < HBM ≤ 4000V)
Per AEC Q101-001
Charge Device Model
C4 (750V < CDM ≤ 1000V)
Per AEC Q101-005
Recommended Operating Conditions
Parameter
Symbol
Device
Min.
Max.
Unit
Input Current (ON)
IF(ON)
7
30
mA
Input Voltage (OFF)
VF(OFF)
–5
0.4
V
Operating Temperature
TA
ASSR-601JV
–40
105
°C
ASSR-601JT
–40
125
°C
Continuous Load Voltage
Vo
—
1000
VDC
Load Current
IO
–10
10
mA
Note
a
a. VO is the voltage across output terminals, pins 9, 10 and pins 15, 16.
Broadcom
ASSR-601Jx-DS104
5
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Electrical Specifications (DC)
Unless otherwise stated, all minimum/maximum specifications are over recommended operating conditions. All typical
values are at TA = 25°C, IF = 10 mA.
Parameter
Symbol
Device
Min.
Typ.
Max.
Unit
Test Conditions
Fig.
Note
Input Reverse Breakdown
Voltage
VR
5
—
—
V
IR =10 µA
Input Forward Voltage
VF
1.25
1.55
1.85
V
IF = 10 mA
1
|VO(OFF)|
1500
1700
—
V
IO = 250 µA, TA = 25°C
3
a, b
ASSR-601JV
—
0.3
1000
nA
VO = 1000V
4
a
ASSR-601JT
—
0.3
5000
nA
VO = 1000V
4
a
a
Output Withstand Voltage
Output Leakage Current
IO(OFF)
Output Capacitance
COUT
—
190
—
pF
VO = 0V, f = 1 MHz
7
Output Resistance
RON
—
100
300
Ω
IO = 2 mA
8
—
100
250
Ω
IO = 10 mA
8
a. Device is in OFF state with VF ≤ 0.4V.
b. Per AEC-Q101, device performance is demonstrated with high temperature reverse bias stress at 1200V (80% of rated voltage).
Switching Specifications (AC)
Unless otherwise stated, all minimum/maximum specifications are over recommended operating conditions. All typical
values are at TA = 25°C, IF = 10 mA.
Parameter
Symbol
Min.
Typ.
Max.
Turn-On Time
TON
—
0.8
4.0
Turn-Off Time
TOFF
Unit
ms
Test Conditions
Fig.
Note
IF = 10 mA, VDD = 40V, RLOAD = 20 kΩ 9, 11, 13
—
0.3
1.0
ms
IF = 30 mA, VDD = 40V, RLOAD = 20 kΩ
—
0.05
0.5
ms
VDD = 40V, RLOAD = 20 kΩ
10, 12,
13
Package Characteristics
Unless otherwise stated, all minimum/maximum specifications are over recommended operating conditions. All typical
values are at TA = 25°C.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Fig.
Note
Input-Output Momentary Withstand
Voltagea
VISO
5000
—
—
VRMS
Input-Output Resistance
RI-O
109
1014
—
Ω
VI-O = 1000 VDC
b
Input-Output Capacitance
CI-O
—
0.6
—
pF
f = 1 MHz; VI-O = 0 VDC
b
RH ≤ 50%, tm = 1 minute;
b, c
TA = 25°C
a. The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous
voltage rating.
b. Device considered a two-terminal device: pins 1 to 8 shorted together, and pins 9, 10, 15, and 16 shorted together.
c. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 6000 VRMS for 1 second.
Broadcom
ASSR-601Jx-DS104
6
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Typical Characteristic Curves
100
3
10
-40°C
25°C
105°C
1
1.2
1.3
0°C
85°C
125°C
1.4 1.5 1.6 1.7 1.8 1.9
VF - FORWARD VOLTAGE - V
1
0
-50
Figure 4: Output Leakage Current vs Ambient Temperature
(Test Condition: VO = 1000V)
IO(OFF) - OUTPUT LEAKAGE
CURRENT - nA
VO(OFF) - OUTPUT WITHSTAND
VOLTAGE - V
1,900
100
1,800
10
1,700
1,600
1
0.1
-50
-25
0
25
50
75
100
TA - AMBIENT TEMPERATURE - °C
125
Figure 5: Output Leakage Current vs Load Voltage
(Test Condition: TA = 25°C)
0.8
0.6
0.4
0.2
200
400
600
VLOAD - LOAD VOLTAGE - V
Broadcom
800
1000
50
75
100
125
TA - AMBIENT TEMPERATURE - °C
50
40
30
20
10
0
-10
-20
-30
-40
-50
0
25
Figure 6: Output Current vs Output Voltage
IO - OUTPUT CURRENT - mA
1
0
-25
0
25
50
75 100 125
TA - AMBIENT TEMPERATURE - °C
1000
2,000
1,500
2
2
Figure 3: Output Withstand Voltage vs Ambient Temperature
(Test Condition: IO = 250 µA)
IOFF - OUTPUT LEAKAGE CURRENT - nA
Figure 2: LED Forward Current Threshold vs Ambient
Temperature (Test Condition: IO = 2 mA)
iTH - THRESHOLD CURRENT -mA
IF - FORWARD CURRENT - mA
Figure 1: LED Forward Current vs LED Forward Voltage
TA = 125°C
TA = 25°C
TA = -40°C
-6 -5 -4 -3 -2 -1 0 1 2 3 4
VO - OUTPUT VOLTAGE - V
5
6
ASSR-601Jx-DS104
7
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Figure 7: Output Capacitance vs Load Voltage
(Test Condition: VLOAD = 0V, f = 1 MHz, TA = 25°C)
Figure 8: Typical On-Resistance vs Ambient Temperature
250
RON - ON-RESISTANCE -:
COUT - OUTPUT CAPACITANCE - pF
200
180
160
140
120
100
80
60
40
100
50
0
0
20
40
60
80
VLOAD - LOAD VOLTAGE - V
100
TOFF - TURN-OFF TIME -Ps
TON - TURN-ON TIME -Ps
IF=30mA
800
600
400
200
0
-50
-25
0
25
50
75 100 125
TA - AMBIENT TEMPERATURE -°C
80
70
60
50
40
30
20
IF=10mA
10
IF=30mA
-50
1600
100
1400
90
1200
1000
800
600
400
200
5
10
15
20
25
IF - INPUT FORWARD CURRENT- mA
Broadcom
30
-25
0
25
50
75 100 125
TA - AMBIENT TEMPERATURE - °C
Figure 12: Turn-Off Time vs Input Forward Current
(Test Condition: VDD = 40V, RLOAD = 20 kΩ)
T OFF - TURN OFF TIME - μs
TON - TURN ON TIME - μs
90
0
Figure 11: Turn-On Time vs Input Forward Current
(Test Condition: VDD = 40V, RLOAD = 20 kΩ)
0
-25
0
25
50
75 100 125
TA - AMBIENT TEMPERATURE - °C
100
IF=10mA
1,000
-50
Figure 10: Turn-Off Time vs Ambient Temperature
(Test Condition: VDD = 40V, RLOAD = 20 kΩ)
Figure 9: Turn-On Time vs Ambient Temperature
(Test Condition: VDD = 40V, RLOAD = 20 kΩ)
1,200
Io=10mA
150
20
0
Io=2mA
200
80
70
60
50
40
30
20
10
0
5
10
15
20
25
30
IF - INPUT FORWARD CURRENT - mA
ASSR-601Jx-DS104
8
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Figure 13: Switching Time Test Circuit and Waveform
VDD
PULSE GEN
Zo=50:
tR=tF=5ns
RLOAD
OUTPUT
MONITORING
NODE
INPUT
MONITORING
NODE
RMONITOR
GND2
GND1
INPUT
IF
50%
50%
90%
OUTPUT
VO
10%
tON
Broadcom
tOFF
ASSR-601Jx-DS104
9
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
ASSR-601JV/JT is a single-channel Photo MOSFET that is
equivalent to 1FormA electromechanical relay (EMR) as
shown in Figure 14. It functions like a bidirectional switch
with no output power requirement. The input side is LED
driven and requires a current limiting resistor (Figure 15).
Recommended input forward current is 7 mA to 30 mA.
Figure 14: ASSR-601JV/JT Equivalent Circuit
Figure 15: Typical Application Circuit
High Voltage
Low Voltage Side
RLOAD
Microprocessor
Application Information
OUTPUT
RLED
Opto-Isolation
ASSR-601JV
GND1
GND2
Turn On Time
The input LED is optically coupled through a photodiode
stack and a driver circuitry to switch two high-voltage
MOSFETs. When current is driven into the LED, the light
generates photo current on the photodiode to charge the
gate of the MOSFETs, to switch and keep the power device
on.
A typical application circuit (Figure 15) shows ASSR-601JV/
JT's input being controlled by the microprocessor to switch
the output (high voltage side). ASSR-601JV/JT's galvanic
isolation protects the low voltage side of the circuit (input)
from the high-voltage side (output).
Pins 9 to 10 and 15 to 16 are internally connected. In routing
the PCB layout, either of the pins can be used. Shorting the
pins (9 to 10) and (15 to 16) is also acceptable.
TON is influenced by the level of input current. As input
current is increased, the TON becomes shorter. In a situation
where TON needs to be shorter than what the maximum
level of input current can achieve, peaking can be
implemented as shown in Figure 16.
In this peaking circuit, the LED can be driven by two inputs
to achieve shorter TON. The second input VIN2's duty cycle
must set to a lower duty cycle to achieve the peaking effect.
Figure 16: Peaking Circuit and Sample Input Timing
High Voltage
RLOAD
VOUT
RLED
VIN1
½ RLED
VIN2
GND1
GND2
VIN1=5V,50% duty cycle
VIN2=5V, 5 % duty cycle
Broadcom
ASSR-601Jx-DS104
10
Automotive Photo MOSFET with R2Coupler™ Isolation
ASSR-601JV, ASSR-601JT Data Sheet
Land Pattern for 8-mm Creepage and
Floating Pins
For applications that require PCB creepage of 8 mm
between the control and switch sides, the land pattern below
can be used.
Figure 17: Land Pattern for 8-mm Creepage
RECOMMENDED LAND PATTERN
11.634
8.150 (0.458)
(0.321)
Figure 18: Floating Pins
Opto-Isolation
NC
1
16
D1
NC
2
15
D1
NC
3
AN
4
CA
5
NC
6
NC
7
10
D2
NC
8
9
D2
ELECTRICALLY
ISOLATED
FLOATING PINS
Turn-Off
Circuit
5.715
(0.225)
At the output side, in between pins 10 and 15, there are two
floating pins. These floating pins are electrically isolated and
have no circuit connection to any of the internal circuitry.
1.742
(0.069)
0.635min.
(0.025)
Broadcom
1.270
(0.050)
ASSR-601Jx-DS104
11
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