AT-42070

AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitterto-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42070 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package 70 mil Package AT-42070 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 0 1 80 600 00 -65 to 00 Thermal Resistance [2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 6.7 mW/°C for Tc > 110°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol |S 1E|  P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions[1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = .0 GHz f = 4.0 GHz f = .0 GHz f= 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz — µA µA pF 30 Min. 10.5 Typ. 11.5 5.5 1.0 0.5 15.0 10.0 1.9 3.0 14.0 10.5 8.0 150 70 0. .0 Max. 0.8 Note: 1. For this test, the emitter is grounded.  AT-42070 Typical Performance, TA = 25°C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 20 16 12 P1dB 10 V 6V 4V 16 |S21E|2 GAIN (dB) 2.0 GHz 20 P1dB 4.0 GHz 12 16 2.0 GHz 8 G1 dB (dB) 4.0 GHz 12 G1 dB (dB) G1dB 4.0 GHz 16 14 12 10 0 G1dB 10 V 6V 4V 4 8 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 10 20 30 IC (mA) 40 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 GAIN (dB) GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 MAG |S21E|2 MSG 24 21 18 15 12 9 6 3 0 0.5 1.0 2.0 NFO GA 4 3 2 1 NFO (dB) 0 3.0 4.0 5.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 3 AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 5°C, VCE = 8 V, IC = 10 mA Freq. S11 GHz Mag. Ang. dB 0.1 .70 -49 8.5 0.5 .69 -137 1.5 1.0 .69 -165 16.0 1.5 .68 -179 1.7 .0 .69 169 10.3 .5 .69 164 8.5 3.0 .70 157 6.9 3.5 .70 151 5.6 4.0 .69 144 4.5 4.5 .68 137 3.5 5.0 .68 18 .7 5.5 .68 117 .0 6.0 .70 107 1. S21 Mag. 6.56 11.85 6.34 4.33 3.6 .64 . 1.91 1.68 1.50 1.37 1.6 1.15 Ang. 154 105 85 7 6 56 48 39 30  14 5 -3 dB -36.0 -9.6 -7. -7.4 -5.6 -5.4 -3.8 -.4 -1.4 -0.4 -19.4 -18.3 -17.6 S12 Mag. .016 .033 .044 .043 .05 .054 .065 .076 .085 .096 .107 .11 .13 Ang. 77 34 9 37 4 46 5 51 55 49 50 45 44 Mag. .91 .50 .40 .38 .37 .37 .39 .41 .43 .46 .48 .48 .48 S22 Ang. -18 -41 -44 -48 -54 -55 -63 -71 -77 -83 -87 -91 -98 AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 5°C, VCE = 8 V, IC = 35 mA Freq. S11 GHz Mag. Ang. dB 0.1 .5 -95 33.4 0.5 .66 -163 3.1 1.0 .67 179 17.3 1.5 .67 169 13.9 .0 .68 160 11.4 .5 .69 157 9.6 3.0 .69 151 8.1 3.5 .69 145 6.8 4.0 .68 139 5.7 4.5 .67 13 4.7 5.0 .67 13 4.0 5.5 .67 113 3. 6.0 .69 103 .5 A model for this device is available in the DEVICE MODELS section. S21 Mag. 46.5 14.33 7.36 4.97 3.74 3.04 .55 .0 1.93 1.74 1.59 1.46 1.34 Ang. 139 95 80 69 60 55 47 39 0  13 5 -4 dB -40.0 -34.4 -9.6 -8.0 -7.3 -3.8 -.8 -1.4 -0. -19.3 -18.0 -17. -16.4 S12 Mag. .010 .019 .033 .040 .053 .065 .07 .086 .097 .109 .16 .138 .15 Ang. 50 46 51 59 59 65 65 59 60 54 50 46 40 Mag. .77 .34 .8 .7 .7 .8 .8 .30 .33 .36 .38 .39 .38 S22 Ang. -9 -4 -41 -44 -51 -53 -6 -7 -80 -85 -90 -94 -10 AT-42070 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 .0 4.0 NFO dB 1.0 1.1 1.5 1.9 3.0 Γopt Mag .05 .06 .10 .3 .45 Ang 15 75 16 17 -145 RN/50 0.13 0.13 0.1 0.11 0.17 4 Ordering Information Part Number AT-4070 No. of Devices 100 70 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE 1 COLLECTOR 3 2 EMITTER .004 ± .002 .10 ± .05 .070 1.78 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .495 ± .030 12.57 ± .76 .035 .89 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-654EN AV0-118EN May 5, 008