ATF-33143-BLKG

ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. • Lead-free Option Available Based on its featured performance, ATF-33143 is ideal for the first or second stage of base station LNA due to the excellent combination of low noise figure and enhanced linearity[1]. The device is also suitable for applications in Wireless LAN, WLL/RLL, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. • 1600 micron Gate Width • Low Noise Figure • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT‑343 (4 lead SC-70) • Tape-and-Reel Packaging Option Available Specifications Note: 1.9 GHz; 4V, 80 mA (Typ.) 1. From the same PHEMT FET family, the smaller geometry ATF34143 may also be considered for the higher gain performance, particularly in the higher frequency band (1.8 GHz and up). • 0.5 dB Noise Figure Surface Mount Package SOT-343 • 22 dBm Output Power at 1 dB Gain Compression • 15 dB Associated Gain • 33.5 dBm Output 3rd Order Intercept Applications • Tower Mounted Amplifier, Low Noise Amplifier and Driver Amplifier for GSM/TDMA/CDMA Base Stations DRAIN SOURCE 3Px Pin Connections and Package Marking SOURCE GATE Note: Top View. Package marking provides orientation and identification. “3P” = Device code “x” = Date code character. A new character is assigned for each month, year. • LNA for Wireless LAN, WLL/RLL and MMDS Applications • General Purpose Discrete PHEMT for other Ultra Low Noise Applications Attention: Observe precautions for handling electrostatic ­sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. ATF-33143 Absolute Maximum Ratings[1] Symbol     Parameter Units Absolute Maximum Drain - Source Voltage [2] V 5.5 VDS Source Voltage [2] VGS Gate - V -5 VGD Gate Drain Voltage [2] V -5 IDS Drain Current[2] mA Idss[3] Pdiss Total Power Dissipation[4] mW 600 Pin max RF Input Power dBm 20 TCH °C 160 TSTG Storage Temperature °C -65 to 160 θjc Thermal Resistance [6] °C/W 145 Channel Temperature [5] Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiesent conditions. 3. VGS = 0 V 4. Source lead temperature is 25°C. Derate 6 mW/°C for TL > 60°C. 5. Please refer to failure rates in reliability section to assess the reliability impact of running devices above a channel temperature of 140°C. 6. Thermal resistance measured using 150°C Liquid Crystal Measurement method. Product Consistency Distribution Charts [8, 9] 500 120 Cpk = 1.7 Std = 0.05 +0.6 V 100 I DS (mA) 400 80 300 0V +3 Std -3 Std 60 200 40 100 0 –0.6 V 0 2 4 V DS (V) 6 20 0 0.2 8 0.3 0.4 0.5 0.6 0.7 0.8 NF (dB) Figure 1. Typical Pulsed I-V Curves[7]. (VGS = -0.2 V per step) 100 Cpk = 1.21 Std = 0.94 80 Figure 2. NF @ 2 GHz, 4 V, 80 mA. LSL=0.2, Nominal=0.53, USL=0.8 120 Cpk = 2.3 Std = 0.2 100 80 60 -3 Std +3 Std -3 Std 60 +3 Std 40 40 20 0 20 29 31 33 35 OIP3 (dBm) Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA. LSL=30.0, Nominal=33.3, USL=37.0 37 0 13 14 15 16 17 GAIN (dB) Figure 4. Gain @ 2 GHz, 4 V, 80 mA. LSL=13.5, Nominal=14.8, USL=16.5 Notes: 7. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded. 8. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 10. The probability of a parameter being between ±1σ is 68.3%, between ±2σ is 95.4% and between ±3σ is 99.7%. 2 ATF-33143 DC Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol [1] Idss VP [1] Min. Typ.[2] Parameters and Test Conditions Units Saturated Drain Current mA 175 237 305 V -0.65 -0.5 -0.35 mA — 80 — mmho 360 440 — VDS = 1.5 V, VGS = 0 V Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss Id Quiescent Bias Current VGS = -0.5 V, VDS = 4 V gm[1] Transconductance VDS = 1.5 V, gm = Idss /VP IGDO Gate to Drain Leakage Current VGD = 5 V Igss Gate Leakage Current VGD = VGS = -4 V Max. µA 1000 µA 42 600 f = 2 GHz ­VDS = 4 V, IDS = 80 mA dB VDS = 4 V, IDS = 60 mA NF Noise Figure f = 900 MHz VDS = 4 V, IDS = 80 mA dB VDS = 4 V, IDS = 60 mA 0.5 0.5 0.8 f = 2 GHz Ga Associated Gain[3] f = 900 MHz VDS = 4 V, IDS = 80 mA dB 13.5 VDS = 4 V, IDS = 60 mA 15 15 VDS = 4 V, IDS = 80 mA dB VDS = 4 V, IDS = 60 mA 21 21 rd Order Output 3 OIP3 Intercept Point [3] f = 2 GHz 5 dBm Pout/Tone VDS = 4 V, IDS = 80 mA dBm 30 VDS = 4 V, IDS = 60 mA 33.5 32 f = 900 MHz 5 dBm Pout/Tone VDS = 4 V, IDS = 80 mA dBm VDS = 4 V, IDS = 60 mA 32.5 31 f = 2 GHz 1 dB Compressed P1dB Compressed Power [3] f = 900 MHz VDS = 4 V, IDS = 80 mA dBm VDS = 4 V, IDS = 60 mA 22 21 VDS = 4 V, IDS = 80 mA dBm VDS = 4 V, IDS = 60 mA 21 20 — 0.4 0.4 16.5 Notes: 1. Guaranteed at wafer probe level. 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. Measurements obtained using production test board described in Figure 5. Input 50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss) Input Matching Circuit G_mag = 0.20 G_ang = 124 (0.3 dB loss) DUT 50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 3 40 40 30 30 OIP3, IIP3 (dBm) OIP3, IIP3 (dBm) ATF-33143 Typical Performance Curves 20 10 2V 3V 4V 20 10 2V 3V 4V 0 20 40 60 80 0 120 100 0 20 40 IDSQ (mA) 25 25 20 20 15 10 2V 3V 4V 5 0 20 40 60 80 100 0 120 2V 3V 4V 0 20 40 1.2 1.2 21 1.0 0.6 NF 11 80 IDSQ (mA) Figure 10. NF and Ga vs. Bias[1] at 2 GHz. 100 Ga 0.6 19 NF 18 0.4 17 0.2 120 16 2V 3V 4V 0.8 20 Ga (dB) 0.8 13 NOISE FIGURE (dB) Ga (dB) 120 22 1.0 14 60 100 1.4 Ga 40 80 Figure 9. P1dB vs. Bias[1,2] Tuned for NF @ 4V, 80 mA at 900 MHz. 15 20 60 IDSQ (mA) 16 0 120 10 5 Figure 8. P1dB vs. Bias[1,2] at 2 GHz. 10 100 15 IDSQ (mA) 12 80 Figure 7. OIP3, IIP3 vs. Bias[1] at 900 MHz. P1dB (dBm) P1dB (dBm) Figure 6. OIP3, IIP3 vs. Bias[1] at 2 GHz. 0 60 IDSQ (mA) 0.4 2V 3V 4V 0 20 40 60 80 100 NOISE FIGURE (dB) 0 0.2 0 120 IDSQ (mA) Figure 11. NF and Ga vs. Bias[1] at 900 MHz. Notes: 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. 4 ATF-33143 Typical Performance Curves, continued 1.5 30 80 mA 60 mA 25 20 1.0 Ga (dB) Fmin (dB) 80 mA 60 mA 15 10 0.5 5 0 2 4 6 8 0 10 0 2 FREQUENCY (GHz) Figure 12. Fmin vs. Frequency and Current at 4V. 15 1.0 10 0.5 4 6 30 25 20 15 0 10 8 0 2000 35 3.0 30 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0 20 40 60 80 100 0 120 IDSQ (mA) Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at 3.9 GHz. OIP3, P1dB (dBm), GAIN (dB) P1dB OIP3 Gain NF 3.5 NOISE FIGURE (dB) OIP3, P1dB (dBm), GAIN (dB) 35 0 6000 8000 Figure 15. P1dB, OIP3 vs. Frequency and Temp at VDS = 4V, IDS = 80 mA. Figure 14. Fmin and Ga vs. Frequency and Temp at VDS = 4V, IDS = 80 mA. 25 4000 FREQUENCY (MHz) FREQUENCY (GHz) 30 10 25C -40C 85C 35 P1dB, OIP3 (dBm) 1.5 NOISE FIGURE (dB) Ga (dB) 20 2 8 40 2.0 25C -40C 85C 0 6 Figure 13. Associated Gain vs. Frequency and Current at 4V. 25 5 4 FREQUENCY (GHz) 3 25 2 20 15 1 10 5 0 P1dB OIP3 0 20 40 60 Gain NF 80 100 NOISE FIGURE (dB) 0 0 120 IDSQ (mA) Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1,2] at 5.8 GHz. Notes: 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been deembedded from actual measurements. 2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. 5 25 25 20 20 15 15 P 1d B (dBm) P 1dB (dBm) ATF-33143 Typical Performance Curves, continued 10 5 5 0 10 0 20 40 60 80 100 120 I DS (mA) Figure 18. P1dB vs. IDS Active Bias[1] Tuned for NF @ 4V, 80 mA at 2 GHz. 0 0 20 40 60 80 100 120 I DS (mA) Figure 19. P1dB vs. IDS Active Bias[1] Tuned for NF @ 4V, 80 mA at 900 MHz. Note: 1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 6 ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA Freq (GHz) P1dB (dBm) Id (mA) G1dB (dB) PAE1dB (%) P3dB (dBm) Id (mA) PAE3dB (%) Γ Out_mag (Mag.) 0.9 1.5 1.8 2.0 4.0 6.0 20.7 21.2 21.1 21.6 23.0 24.0 89 91 80 81 97 130 23.2 20.7 19.2 18.1 11.9 5.9 33 36 40 44 48 36 23.2 23.8 23.0 23.2 24.6 25.2 102 116 94 89 135 136 51 51 52 57 48 36 0.39 0.43 0.43 0.42 0.40 0.37 Γ Out_ang (°) 160 165 170 174 -150 -124 Pout (dBm), G (dB), PAE (%) 70 Pout Gain PAE 60 50 40 30 20 10 0 -10 -20 -40 -30 -20 -10 0 10 20 Pin (dBm) Figure 20. Swept Power Tuned for Max P1dB VDS =4V, IDSQ = 80 mA, 2 GHz. Notes: 1. Measurements made on ATN LP1 power load pull system. 2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. 3. PAE (%) = ((Pout – Pin) / Pdc) X 100 4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. 7 ATF-33143 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.88 0.79 0.78 0.75 0.74 0.74 0.74 0.75 0.75 0.76 0.78 0.80 0.83 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -72.70 -112.10 -119.80 -149.60 -162.80 -170.10 172.30 159.10 137.00 117.20 98.10 80.10 64.50 50.30 36.30 21.50 7.20 -5.00 -15.50 -27.50 -40.50 -52.30 -61.20 22.08 19.46 18.86 16.11 14.70 13.84 11.98 10.37 7.95 6.20 4.69 3.12 1.68 0.48 -0.46 -1.50 -2.70 -4.24 -5.49 -6.42 -7.26 -8.20 -9.51 S21 Mag. 12.81 9.41 8.86 6.44 5.47 4.94 3.98 3.31 2.50 2.05 1.73 1.44 1.22 1.07 0.96 0.85 0.74 0.62 0.54 0.49 0.44 0.40 0.34 Ang. dB 134.40 111.20 106.50 88.30 79.80 74.80 63.00 53.10 35.00 17.20 -1.30 -19.30 -35.20 -49.30 -64.30 -80.20 -95.80 -110.20 -121.90 -134.20 -146.80 -160.40 -171.00 -27.02 -24.13 -23.93 -22.57 -22.14 -21.84 -21.24 -20.68 -19.59 -18.56 -17.83 -17.42 -17.29 -17.08 -16.59 -16.53 -16.81 -17.38 -17.78 -18.00 -17.87 -18.07 -18.79 S12 Mag. 0.045 0.062 0.064 0.075 0.079 0.082 0.088 0.094 0.106 0.119 0.129 0.135 0.137 0.140 0.148 0.149 0.144 0.135 0.129 0.126 0.128 0.125 0.115 S22 Ang. Mag. Ang. 54.50 40.70 38.00 29.80 26.80 24.90 20.80 17.10 9.30 -0.70 -12.80 -26.00 -37.30 -46.80 -58.30 -71.30 -83.90 -95.60 -103.90 -113.70 -124.20 -136.40 -145.10 0.28 0.37 0.38 0.42 0.45 0.46 0.49 0.51 0.53 0.54 0.54 0.57 0.60 0.63 0.65 0.68 0.72 0.75 0.77 0.80 0.82 0.83 0.85 -118.70 -149.90 -155.40 -176.20 174.70 169.40 160.10 152.10 139.20 124.70 108.00 90.40 74.80 62.70 50.90 37.40 21.40 5.80 -5.70 -15.80 -25.70 -37.90 -49.70 MSG/MAG (dB) 24.54 21.81 21.41 19.34 18.40 17.80 16.56 15.46 13.73 11.44 9.80 8.35 7.43 6.45 6.41 6.14 5.64 4.60 3.64 3.44 3.22 3.11 1.79 ATF-33143 Typical Noise Parameters 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.26 0.30 0.31 0.34 0.34 0.39 0.51 0.53 0.61 0.70 0.82 0.93 1.04 1.12 1.21 0.45 0.38 0.36 0.31 0.26 0.27 0.28 0.32 0.41 0.49 0.53 0.59 0.62 0.67 0.69 26.00 42.20 44.80 69.50 93.60 108.60 150.70 165.60 -162.10 -136.80 -113.60 -91.50 -72.60 -55.90 -42.20 40 Rn/50 - Ga dB 0.07 0.07 0.07 0.06 0.04 0.05 0.03 0.03 0.04 0.06 0.11 0.23 0.38 0.59 0.77 24.74 21.02 20.36 17.40 16.50 15.82 14.59 13.13 11.27 9.92 8.70 7.71 6.69 6.04 5.73 MSG/MAG and |S21|2 (dB) VDS = 2V, IDS = 40 mA Freq. Fmin       Γopt GHz dB Mag. Ang. 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2V, 40 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-33143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.87 0.78 0.77 0.74 0.73 0.73 0.73 0.74 0.74 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -72.20 -111.60 -119.30 -149.00 -162.20 -169.50 172.90 159.70 137.60 117.70 98.60 80.60 64.90 50.70 36.60 21.90 7.50 -4.80 -15.40 -27.40 -40.40 -52.30 -61.30 22.51 19.88 19.28 16.52 15.11 14.24 12.38 10.78 8.37 6.63 5.10 3.54 2.10 0.92 -0.04 -1.11 -2.32 -3.86 -5.11 -6.05 -6.95 -7.91 -9.25 S21 Mag. 13.42 9.87 9.26 6.73 5.72 5.17 4.17 3.46 2.62 2.15 1.80 1.51 1.28 1.12 1.00 0.89 0.77 0.64 0.56 0.50 0.45 0.41 0.35 Ang. dB 134.40 111.20 106.50 88.30 79.90 74.80 63.10 53.30 35.20 17.30 -1.30 -19.50 -35.50 -49.60 -64.90 -81.00 -96.80 -111.40 -123.30 -135.90 -148.70 -162.30 -172.90 -27.20 -24.27 -24.06 -22.79 -22.34 -22.13 -21.41 -20.91 -19.79 -18.80 -17.99 -17.58 -17.44 -17.13 -16.64 -16.58 -16.81 -17.38 -17.78 -17.93 -17.87 -18.00 -18.72 S12 Mag. S22 Ang. Mag. Ang. 0.044 0.061 0.063 0.073 0.077 0.079 0.086 0.091 0.103 0.115 0.126 0.132 0.134 0.139 0.147 0.148 0.144 0.135 0.129 0.127 0.128 0.126 0.116 54.40 40.60 37.90 29.80 26.90 25.00 21.10 17.50 10.00 0.00 -11.90 -24.90 -36.00 -45.50 -57.00 -70.10 -82.70 -94.40 -103.00 -112.80 -123.40 -135.70 -144.30 0.27 0.35 0.36 0.40 0.42 0.43 0.46 0.48 0.50 0.51 0.52 0.55 0.57 0.60 0.63 0.66 0.70 0.73 0.76 0.79 0.81 0.82 0.84 MSG/MAG (dB) -109.80 -143.70 -150.10 -172.10 178.40 172.90 163.10 154.80 141.20 126.50 109.80 92.10 76.20 64.00 52.10 38.60 22.60 6.80 -5.00 -15.10 -25.10 -37.30 -49.10 24.84 22.09 21.67 19.64 18.71 18.16 16.85 15.80 14.06 11.53 9.99 8.57 7.64 6.69 6.65 6.38 6.00 4.90 3.90 3.71 3.48 3.41 1.94 ATF-33143 Typical Noise Parameters 40 Freq. GHz Fmin       Γopt dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.24 0.29 0.31 0.37 0.34 0.38 0.51 0.52 0.58 0.68 0.80 0.89 1.01 1.09 1.18 0.45 0.38 0.34 0.28 0.25 0.25 0.28 0.31 0.40 0.46 0.54 0.57 0.61 0.65 0.68 28.40 40.90 42.60 66.30 90.10 105.80 147.40 162.80 -165.20 -138.50 -115.00 -92.50 -72.80 -56.40 -42.60 Rn/50 - Ga dB 0.07 0.07 0.07 0.07 0.05 0.05 0.03 0.03 0.03 0.05 0.09 0.20 0.35 0.53 0.69 25.26 21.26 20.50 17.67 16.57 15.93 14.72 13.29 11.45 10.05 8.97 7.90 6.90 6.26 5.99 MSG/MAG and |S21|2 (dB) VDS = 3 V, IDS = 40 mA 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3V, 40 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-33143 Typical Scattering Parameters, VDS = 3 V, IDS = 60 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.87 0.78 0.77 0.74 0.73 0.73 0.73 0.74 0.75 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -75.30 -114.70 -122.30 -151.60 -164.60 -171.80 171.00 158.10 136.40 116.90 97.80 79.90 64.50 50.40 36.40 21.60 7.30 -5.00 -15.50 -27.50 -40.60 -52.30 -61.40 22.95 20.22 19.59 16.78 15.35 14.47 12.60 10.99 8.56 6.80 5.28 3.71 2.26 1.07 0.12 -0.94 -2.13 -3.67 -4.93 -5.85 -6.70 -7.61 -8.97 S21 Mag. 14.06 10.26 9.56 6.91 5.87 5.30 4.27 3.54 2.68 2.19 1.84 1.53 1.30 1.13 1.02 0.90 0.78 0.66 0.57 0.51 0.46 0.42 0.36 Ang. dB 133.00 110.00 105.50 87.60 79.30 74.40 62.80 53.10 35.40 17.70 -0.60 -18.60 -34.40 -48.50 -63.50 -79.50 -95.10 -109.70 -121.40 -133.90 -146.60 -160.30 -170.90 -28.18 -25.19 -24.89 -23.37 -22.87 -22.53 -21.76 -21.07 -19.79 -18.68 -17.88 -17.42 -17.29 -17.03 -16.49 -16.43 -16.71 -17.27 -17.72 -17.86 -17.72 -17.92 -18.64 S12 Mag. S22 Ang. Mag. Ang. 0.039 0.055 0.057 0.068 0.072 0.075 0.082 0.089 0.103 0.117 0.128 0.135 0.137 0.141 0.150 0.151 0.146 0.137 0.130 0.128 0.130 0.127 0.117 55.10 42.60 40.50 33.50 30.80 29.00 25.10 21.40 13.20 2.80 -9.70 -23.20 -34.60 -44.50 -56.20 -69.40 -82.10 -94.00 -102.70 -112.40 -123.00 -135.30 -144.00 ATF-33143 Typical Noise Parameters Fmin       Γopt dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.23 0.28 0.29 0.34 0.34 0.38 0.52 0.53 0.61 0.68 0.83 0.91 1.04 1.09 1.13 0.43 0.35 0.35 0.26 0.23 0.22 0.25 0.30 0.39 0.47 0.52 0.58 0.61 0.66 0.70 29.20 42.40 45.00 68.80 93.30 109.70 150.60 167.50 -160.30 -134.70 -112.10 -89.70 -71.50 -54.80 -41.40 Rn/50 - Ga dB 0.06 0.06 0.07 0.06 0.04 0.05 0.03 0.03 0.04 0.06 0.11 0.22 0.36 0.56 0.73 25.64 21.62 20.87 17.84 16.89 16.24 14.93 13.52 11.65 10.28 9.09 8.09 7.07 6.43 6.15 MSG/MAG and |S21|2 (dB) Freq. GHz -124.20 -153.90 -158.80 -178.70 172.60 167.50 158.50 151.00 138.60 124.40 107.80 90.20 74.70 62.70 50.90 37.40 21.40 5.80 -6.10 -15.80 -25.80 -37.90 -49.70 25.57 22.71 22.24 20.07 19.11 18.49 17.17 16.00 14.15 11.53 10.03 8.66 7.75 6.81 6.72 6.46 6.04 4.99 3.98 3.78 3.54 3.45 2.08 40 VDS = 3 V, IDS = 60 mA 0.27 0.36 0.37 0.41 0.43 0.44 0.47 0.50 0.52 0.52 0.53 0.56 0.59 0.62 0.65 0.68 0.71 0.74 0.77 0.80 0.82 0.82 0.84 MSG/MAG (dB) 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3V, 60 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 10 ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.87 0.78 0.77 0.73 0.72 0.72 0.72 0.73 0.74 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -72.50 -111.80 -119.40 -149.10 -162.20 -169.50 173.00 159.80 137.70 117.90 98.80 80.80 65.10 50.90 36.80 22.00 7.60 -4.70 -15.30 -27.20 -40.30 -52.20 -61.20 22.73 20.07 19.46 16.69 15.28 14.41 12.55 10.95 8.54 6.80 5.28 3.72 2.29 1.10 0.15 -0.93 -2.14 -3.69 -4.97 -5.92 -6.85 -7.83 -9.19 S21 Mag. 13.74 10.09 9.43 6.85 5.82 5.26 4.24 3.53 2.68 2.19 1.84 1.54 1.30 1.14 1.02 0.90 0.78 0.66 0.57 0.51 0.46 0.41 0.35 Ang. dB 134.30 111.00 106.40 88.20 79.80 74.70 63.00 53.20 35.10 17.10 -1.60 -19.80 -35.90 -50.20 -65.60 -81.80 -97.60 -112.40 -124.50 -137.30 -150.10 -163.80 -174.60 -27.39 -24.42 -24.20 -22.90 -22.44 -22.23 -21.58 -21.07 -19.93 -18.92 -18.11 -17.68 -17.50 -17.23 -16.69 -16.58 -16.81 -17.32 -17.78 -17.93 -17.79 -18.00 -18.72 S12 Mag. 0.043 0.060 0.062 0.072 0.076 0.078 0.084 0.089 0.101 0.113 0.124 0.130 0.133 0.137 0.146 0.148 0.144 0.136 0.129 0.127 0.129 0.126 0.116 S22 Ang. Mag. Ang. 54.10 40.40 37.70 29.80 26.90 25.00 21.20 17.80 10.40 0.70 -11.20 -24.10 -35.10 -44.60 -56.10 -69.10 -81.70 -93.50 -102.10 -112.20 -122.80 -135.10 -143.80 ATF-33143 Typical Noise Parameters Fmin       Γopt dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.30 0.33 0.34 0.38 0.37 0.40 0.53 0.54 0.60 0.68 0.82 0.89 1.00 1.07 1.16 0.44 0.36 0.33 0.26 0.25 0.23 0.27 0.31 0.38 0.46 0.49 0.56 0.60 0.66 0.68 31.50 42.70 44.50 68.70 90.70 106.40 145.80 162.00 -165.30 -138.80 -115.40 -93.20 -73.10 -56.60 -42.80 Rn/50 - Ga dB 0.08 0.07 0.08 0.06 0.05 0.05 0.04 0.03 0.04 0.05 0.09 0.19 0.33 0.50 0.65 25.59 21.43 20.63 17.72 16.65 15.99 14.70 13.32 11.47 10.17 8.93 7.99 7.00 6.40 6.11 MSG/MAG and |S21|2 (dB) Freq. GHz -104.90 -140.20 -147.10 -169.70 -179.30 175.10 165.10 156.50 142.50 127.70 111.00 93.40 77.30 64.90 53.00 39.50 23.50 7.50 -4.30 -14.60 -24.50 -36.80 -48.70 25.04 22.26 21.82 19.78 18.84 18.29 17.03 15.98 14.23 11.54 10.07 8.68 7.77 6.80 6.78 6.55 6.13 5.03 4.06 3.87 3.62 3.54 2.05 40 VDS = 4 V, IDS = 40 mA 0.26 0.33 0.34 0.38 0.40 0.41 0.44 0.46 0.48 0.49 0.50 0.53 0.56 0.59 0.62 0.65 0.69 0.72 0.76 0.79 0.81 0.82 0.84 MSG/MAG (dB) 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 24. MSG/MAG and |S21|2 vs. Frequency at 4V, 40 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 11 ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.86 0.77 0.76 0.73 0.72 0.72 0.72 0.73 0.74 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -75.60 -115.00 -122.50 -151.80 -164.60 -171.80 171.00 158.20 136.50 117.00 98.00 80.20 64.70 50.60 36.60 21.80 7.50 -4.80 -15.40 -27.30 -40.40 -52.20 -61.20 23.20 20.45 19.80 16.98 15.55 14.66 12.79 11.17 8.76 7.00 5.48 3.92 2.48 1.29 0.34 -0.72 -1.94 -3.48 -4.73 -5.68 -6.56 -7.54 -8.87 S21 Mag. 14.45 10.53 9.77 7.06 5.99 5.41 4.36 3.62 2.74 2.24 1.88 1.57 1.33 1.16 1.04 0.92 0.80 0.67 0.58 0.52 0.47 0.42 0.36 Ang. dB 132.90 109.80 105.30 87.50 79.20 74.20 62.70 53.00 35.20 17.50 -1.00 -19.00 -34.90 -49.10 -64.30 -80.40 -96.20 -110.80 -122.80 -135.40 -148.30 -162.10 -172.80 -28.18 -25.35 -25.04 -23.61 -22.97 -22.73 -21.94 -21.31 -20.00 -18.86 -17.99 -17.52 -17.39 -17.08 -16.54 -16.48 -16.71 -17.27 -17.65 -17.79 -17.72 -17.92 -18.56 S12 Mag. 0.039 0.054 0.056 0.066 0.071 0.073 0.080 0.086 0.100 0.114 0.126 0.133 0.135 0.140 0.149 0.150 0.146 0.137 0.131 0.129 0.130 0.127 0.118 S22 Ang. Mag. Ang. 54.80 42.20 40.20 33.20 30.60 28.90 25.10 21.60 13.70 3.40 -8.90 -22.30 -33.60 -43.40 -55.20 -68.40 -81.10 -92.90 -101.60 -111.60 -122.20 -134.70 -143.30 0.26 0.34 0.35 0.39 0.41 0.42 0.45 0.47 0.49 0.50 0.51 0.54 0.57 0.60 0.63 0.66 0.70 0.73 0.76 0.79 0.81 0.82 0.84 -118.50 -150.00 -155.50 -176.10 175.00 169.80 160.60 152.70 139.90 125.70 109.10 91.60 75.90 63.70 52.00 38.50 22.50 6.70 -5.20 -15.20 -25.10 -37.30 -49.20 MSG/MAG (dB) 25.69 22.90 22.42 20.29 19.26 18.70 17.36 16.24 13.79 11.57 10.15 8.80 7.88 6.92 6.92 6.69 6.27 5.14 4.12 3.90 3.72 3.59 2.19 ATF-33143 Typical Noise Parameters 40 Freq. GHz Fmin       Γopt dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.29 0.33 0.34 0.38 0.39 0.42 0.47 0.51 0.63 0.72 0.82 0.93 1.03 1.13 1.22 0.42 0.33 0.32 0.26 0.22 0.22 0.25 0.29 0.39 0.46 0.51 0.57 0.61 0.66 0.69 31.40 44.70 48.00 71.90 94.00 109.70 149.40 166.80 -160.60 -135.30 -112.40 -90.90 -71.80 -55.50 -41.80 Rn/50 - Ga dB 0.08 0.07 0.07 0.06 0.05 0.05 0.03 0.03 0.04 0.06 0.11 0.21 0.37 0.55 0.72 25.91 21.80 21.00 18.14 16.96 16.29 14.95 13.58 11.74 10.36 9.17 8.18 7.19 6.56 6.29 MSG/MAG and |S21|2 (dB) VDS = 4 V, IDS = 60 mA 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4V, 60 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 12 ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 80 mA Freq. S11 (GHz) Mag. Ang. dB 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.86 0.77 0.76 0.73 0.72 0.72 0.72 0.73 0.74 0.75 0.77 0.79 0.82 0.83 0.86 0.88 0.90 0.91 0.91 0.92 0.93 0.94 0.93 -77.20 -116.60 -124.00 -153.00 -165.80 -172.90 170.10 157.40 136.00 116.70 97.70 80.00 64.50 50.50 36.50 21.70 7.40 -4.80 -15.40 -27.30 -40.40 -52.20 -61.20 23.39 20.60 19.93 17.09 15.66 14.77 12.89 11.27 8.84 7.09 5.57 4.00 2.55 1.36 0.43 -0.65 -1.85 -3.39 -4.64 -5.57 -6.46 -7.40 -8.75 S21 Mag. 14.76 10.71 9.91 7.15 6.06 5.47 4.41 3.66 2.77 2.26 1.90 1.58 1.34 1.17 1.05 0.93 0.81 0.68 0.59 0.53 0.47 0.43 0.36 Ang. dB 132.20 109.20 104.80 87.10 78.90 74.00 62.50 53.00 35.30 17.70 -0.70 -18.70 -34.50 -48.70 -63.80 -79.90 -95.60 -110.20 -122.00 -134.80 -147.60 -161.40 -172.10 -28.82 -25.86 -25.49 -23.86 -23.31 -22.95 -22.03 -21.39 -20.00 -18.86 -17.99 -17.47 -17.34 -17.03 -16.49 -16.38 -16.66 -17.21 -17.59 -17.79 -17.65 -17.85 -18.56 S12 Mag. 0.036 0.051 0.053 0.064 0.068 0.071 0.079 0.085 0.100 0.114 0.126 0.134 0.136 0.141 0.150 0.152 0.147 0.138 0.132 0.129 0.131 0.128 0.118 S22 Ang. Mag. Ang. 55.30 43.40 41.70 35.20 32.70 31.00 27.20 23.50 15.30 4.80 -7.80 -21.30 -32.80 -42.80 -54.60 -67.80 -80.60 -92.60 -101.10 -111.20 -121.90 -134.30 -143.10 ATF-33143 Typical Noise Parameters Fmin       Γopt dB Mag. Ang. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.30 0.35 0.35 0.40 0.42 0.45 0.49 0.55 0.68 0.75 0.90 1.00 1.12 1.19 1.33 0.42 0.32 0.32 0.23 0.20 0.19 0.23 0.28 0.38 0.48 0.52 0.57 0.62 0.67 0.69 34.50 46.40 50.40 74.80 98.80 114.10 153.70 171.50 -156.70 -133.30 -110.70 -89.60 -70.80 -54.60 -40.80 Rn/50 - Ga dB 0.08 0.07 0.07 0.06 0.05 0.05 0.04 0.03 0.04 0.07 0.13 0.25 0.43 0.65 0.85 26.23 21.96 21.16 18.47 17.18 16.48 15.09 13.70 11.85 10.49 9.27 8.27 7.28 6.66 6.31 MSG/MAG and |S21|2 (dB) Freq. GHz -125.40 -154.80 -159.50 -179.10 172.40 167.30 158.50 151.00 138.80 124.80 108.40 90.90 75.40 63.30 51.60 38.10 22.10 6.40 -5.00 -15.40 -25.30 -37.50 -49.30 26.13 23.22 22.72 20.48 19.50 18.87 17.47 16.34 13.59 11.56 10.17 8.84 7.93 6.98 6.96 6.73 6.26 5.21 4.20 3.98 3.73 3.65 2.24 40 VDS = 4 V, IDS = 80 mA 0.26 0.34 0.36 0.39 0.41 0.42 0.45 0.48 0.50 0.51 0.52 0.55 0.58 0.61 0.63 0.66 0.70 0.73 0.76 0.79 0.81 0.82 0.84 MSG/MAG (dB) 30 MSG 20 MAG 10 0 -10 |S21|2 0 5 10 15 20 FREQUENCY (GHz) Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4V, 80 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 13 Noise Parameter ­Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Γo. If the reflection coefficient of the matching network is other than Γo, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn Zo |Γs – Γo | 2 (|1 + Γo| 2)(1 –Γs| 2) Where Rn /Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. Typically for FETs, the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Avago Application 1085. Reliability Data Channel Temperature (oC) Nominal Failures per million (FPM) 90% confidence Failures per million (FPM) for different durations for different durations (FITs) 1 year 5 year 10 year 30 year (FITs) 1 year 5 year 10 year 30 year 1000 1000 hours hours 100