ATF-52189-TR1

ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a medium-power, high-linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz. • Single voltage operation ATF-52189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested. • SOT 89 standard package Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data 3. Conform to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power • High Linearity and P1dB • Low Noise Figure • Excellent uniformity in product specifications • Point MTTF > 300 years[2] • MSL-2 and lead-free • Tape-and-Reel packaging option available Specifications 2 GH, 4.5V, 280 mA (Typ.) • 42 dBm Output IP3 • 27 dBm Output Power at 1dB gain compression • 1.50 dB Noise Figure • 16.0 dB Gain • 55% PAE at P1dB Pin Connections and Package Marking • LFOM[3] 12.5 dB Applications • Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure 2GX #1 #2 RFin GND Top View • Driver Amplifier for WLAN, WLL/RLL and MMDS applications #3 RFout #3 #2 RFout GND #1 RFin Bottom View Notes: Package marking provides orientation and identification: “2G” = Device Code “x” = Month code indicates the month of manufacture. • General purpose discrete E-pHEMT for other high linearity applications ATF-52189 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum Vds Drain–Source Voltage[2] V 7 Vgs Gate–Source Voltage[2] V -5 to 1.0 Vgd Gate Drain Voltage[2] V -5 to 1.0 Ids Drain Current[2] mA 500 Igs Gate Current mA 46 Pdiss Total Power Dissipation[3] W 1.5 Pin max. RF Input Power dBm +27 Tch Channel Temperature °C 150 Tstg Storage Temperature °C -65 to 150 Thermal Resistance[2,4] θch-b = 52°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature TB is 25°C. Derate 19.25 mW/°C for TB > 72°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. ATF-52189 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage V — 0.62 — Vth Threshold Voltage Vds = 4.5V, Ids = 16 mA V Ids Drain to Source Current Vds = 4.5V, Vgs = 0V μA — 0.28 — — 14.8 — Gm Transconductance Vds = 4.5V, Gm = ΔIds/ΔVgs; ΔVgs = Vgs1 – Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V mmho — 1300 — Igss Gate Leakage Current Vds = 0V, Vgs = -4V μA -20.0 0.49 — NF Noise Figure f = 2 GHz f = 900 MHz dB dB — — 1.50 1.25 — — G Gain [1] f = 2 GHz f = 900 MHz dB dB 14.8 — 16.0 16.5 17.8 — OIP3 Output 3rd Order Intercept Point [1] f = 2 GHz f = 900 MHz dBm dBm 38.5 — 42.0 42.0 — — P1dB Output 1dB Compressed[1] f = 2 GHz f = 900 MHz dBm dBm 25.5 — 27.0 27.2 — — PAE Power Added Efficiency f = 2 GHz f = 900 MHz % % 40.0 — 55.0 50.0 — — NF Noise Figure f=900 MHz f=2.0 GHz f=2.4 GHz dB dB dB — — — 1.25 1.50 1.60 — — — G Gain [1] f=900 MHz f=2.0 GHz f=2.4 GHz dB dB dB — 14.8 — 16.5 16.0 13.5 — 17.8 — OIP3 Output 3rd Order Intercept Point [1] f=900 MHz f=2.0 GHz f=2.4 GHz dBm dBm dBm — 38.5 — 42.0 42.0 41.0 — — — P1dB Output 1dB Compressed [1] f=900 MHz f=2.0 GHz f=2.4 GHz dBm dBm dBm — 25.5 — 27.2 27.0 26.0 — — Vds = 4.5V, Ids = 200 mA continued on next page 22 Symbol Parameters and Test Conditions PAE Power Added Efficiency ACLR Adjacent Channel Leakage Power Ratio [1,2] Units Min. Typ. Max. f=900 MHz f=2.0 GHz f=2.4 GHz % % % — 40.0 — 50.0 55.0 52.0 — — Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc — — -58.0 -66.0 — — Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz Input Matching Circuit Γ_mag=0.76 Γ_ang=-131.3° Input Output Matching Circuit Γ_mag=0.32 Γ_ang=-176.6° DUT Output Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts [1,2] 150 150 Stdev=0.30 Stdev=0.35 120 90 –3 Std +3 Std 60 FREQUENCY FREQUENCY 120 90 –3 Std 60 30 30 0 41.5 42 42.5 43 0 43.5 26.25 26.75 28.25 150 150 Stdev=0.10 Stdev=0.16 120 90 –3 Std FREQUENCY 120 FREQUENCY 27.75 Figure 3. P1dB @ 2 GHz, 4.5V, 200 mA. LSL = 25.5 dBm, Nominal = 27.1 dBm. Figure 2. OIP3 @ 2 GHz, 4.5V/200 mA. LSL = 38.5 dBm, Nominal = 42.4 dBm. +3 Std 60 0 15.5 90 –3 Std +3 Std 60 30 30 0 16 16.5 GAIN (dBm) Figure 4. Gain @ 2 GHz, 4.5V, 200 mA. LSL = 14.8 dBm, Nominal = 16.1 dBm, USL = 17.8 dB. 3 27.25 P1dB (dBm) OIP3 (dBm) 3 +3 Std 17 1 1.25 1.5 1.75 NF (dBm) Figure 5. NF @ 2 GHz, 4.5V, 200 mA. Nominal = 1.5 dBm. 2 Notes: 1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device’s optimum OIP3 and P1dB measurements were determined using a Maury Load Pull System at 4.5V, 200 mA quiesent bias. Typical Gammas at Optimum OIP3 [1] Freq (GHz) Gamma Source Mag Ang (deg) Gamma Load Mag Ang (deg) OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.7511 -132.82 0.6444 -157.38 42.0 16.5 27.2 49.7 2.0 0.7577 -131.31 0.3236 -176.55 42.0 15.7 26.8 54.9 2.4 0.7625 -128.49 0.2665 -148.09 41.0 13.6 26.5 49.5 3.9 0.7432 -94.91 0.4125 -98.27 40.0 10.8 27.3 49.1 Typical Gammas at Optimum P1dB [1] Freq (GHz) Gamma Source Mag Ang (deg) Gamma Load Mag Ang (deg) OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.7786 139.82 0.5494 -177.76 38.6 17.3 28.4 58.3 2.0 0.7052 -168.54 0.6981 -165.37 37.5 14.8 29.0 48.6 2.4 0.7117 -161.45 0.6624 -159.44 37.3 12.0 29.3 48.2 3.9 0.3379 -100.92 0.6151 -126.28 37.0 9.1 28.0 46.2 Note: 1. Typical describes additional product performance information that is not covered by the product warranty. 600 0.8V 500 0.7V Ids (mA) 400 300 0.6V 200 0.5V 100 0.4V 0 0 1 2 3 4 Vds (V) Figure 6. Typical IV Curve. 44 5 6 7 45 45 40 40 40 35 35 35 25 3V 4V 4.5V 20 15 100 150 200 250 300 350 30 25 3V 4V 4.5V 20 15 100 400 150 200 15 100 400 18 18 13 17 17 12 16 15 14 300 350 13 12 100 400 150 200 Gain_3V Pout_3V PAE_3V 70 30 60 25 40 15 30 10 20 5 0 -10 -6 -2 2 6 10 14 PAE (%) 50 20 GAIN (dB) & Pout (dBm) 30 300 350 7 100 400 3V 4V 4.5V 150 200 Pin (dBm) Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 30 60 25 50 30 10 0 -10 Figure 13. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 900 MHz. Gain_4V Pout_4V PAE_4V 70 40 0 20 -6 -2 2 250 300 350 400 Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 15 10 400 Ids (mA) 20 5 350 10 8 Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz. Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz. 300 11 Ids (mA) Ids (mA) 25 250 250 9 3V 4V 4.5V 6 10 14 GAIN (dB) & Pout (dBm) 250 15 PAE (%) 200 16 14 3V 4V 4.5V 13 GAIN (dB) 14 150 200 Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz. 19 12 100 150 Ids (mA) 19 GAIN (dB) GAIN (dB) 350 3V 4V 4.5V 20 Figure 8. OIP3 vs. Ids and Vds at 2 GHz. Figure 7. OIP3 vs. Ids and Vds at 900 MHz. GAIN (dB) & Pout (dBm) 300 25 Ids (mA) Ids (mA) 55 250 30 60 50 40 15 30 10 10 0 0 -10 Pin (dBm) Gain_4.5V Pout_4.5V PAE_4.5V 20 5 Figure 14. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 900 MHz. 70 20 10 -6 -2 2 6 10 14 0 Pin (dBm) Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 900 MHz. PAE (%) 30 OIP3 (dBm) 45 OIP3 (dBm) OIP3 (dBm) ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA. ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA. 30 10 20 5 2 6 10 14 18 40 15 30 10 20 0 0 -10 -6 -2 30 Gain_3V Pout_3V PAE_3V 40 30 10 20 5 10 6 10 14 18 0 Pin (dBm) Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 3.9 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 66 GAIN (dB) & Pout (dBm) 60 2 18 50 40 15 30 10 20 0 0 -10 10 -6 -2 30 50 25 0 18 50 20 10 5 10 0 0 -10 5 14 Gain_4.5V Pout_4.5V PAE_4.5V 10 20 10 60 30 10 6 18 15 30 2 14 40 15 -2 10 20 40 -6 6 Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 2 GHz. 60 20 0 -10 2 Pin (dBm) Gain_4V Pout_4V PAE_4V 25 PAE (%) GAIN (dB) & Pout (dBm) 70 15 -2 14 30 50 -6 10 Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 2 GHz. 80 20 0 -10 6 60 20 Pin (dBm) Pin (dBm) Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 2 GHz. 25 2 70 5 10 GAIN (dB) & Pout (dBm) -2 50 5 10 -6 60 20 Gain_4.5V Pout_4.5V PAE_4.5V 25 Pin (dBm) Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 3.9 GHz. PAE (%) 0 -10 70 PAE (%) 40 15 PAE (%) 50 GAIN (dB) & Pout (dBm) 60 20 Gain_4V Pout_4V PAE_4V 25 80 -6 -2 2 6 10 14 18 0 Pin (dBm) Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 3.9 GHz. PAE (%) 70 30 80 PAE (%) Gain_3V Pout_3V PAE_3V 25 GAIN (dB) & Pout (dBm) 30 80 GAIN (dB) & Pout (dBm) 30 46 18 44 16 42 14 GAIN (dB) OIP3 (dBm) ATF-52189 Typical Performance Curves, continued Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA, Over Temperature and Frequency 40 38 10 -40°C 25°C 80°C 36 34 0.5 12 1 1.5 -40°C 25°C 80°C 8 2 2.5 3 3.5 6 0.5 4 1 FREQUENCY (GHz) 60 27.5 55 27 50 PAE (%) 28 P1dB (dBm) 2.5 3 3.5 4 Figure 23. Gain vs. Temperature and Frequency at optimum OIP3. 26.5 26 45 40 -40°C 25°C 80°C 25.5 1 1.5 -40°C 25°C 80°C 35 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 24. P1dB vs. Temperature and Frequency at optimum OIP3. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 77 2 FREQUENCY (GHz) Figure 22. OIP3 vs. Temperature and Frequency at optimum OIP3. 25 0.5 1.5 30 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 25. PAE vs. Temperature and Frequency at optimum OIP3. 4 45 45 40 40 40 35 35 35 25 3V 4V 4.5V 20 15 100 150 200 250 300 350 30 25 3V 4V 4.5V 20 15 100 400 150 200 15 100 400 17 15 15 15 13 13 13 GAIN (dB) 17 11 9 11 3V 4V 4.5V 9 250 300 350 7 5 100 400 150 200 35 Gain_3V Pout_3V PAE_3V 50 10 5 0 0 -10 5 10 14 Pin (dBm) Figure 32. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. -6 -2 2 250 300 350 400 35 6 10 14 70 Gain_4.5V Pout_4.5V PAE_4.5V 30 50 20 20 6 25 10 10 2 200 Figure 31. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 60 30 30 -2 Gain_4V Pout_4V PAE_4V 15 15 -6 150 Ids (mA) 40 40 400 11 5 100 400 20 20 0 -10 350 70 30 60 PAE (%) 25 300 35 GAIN (dB) & Pout (dBm) 30 250 Figure 30. Small Signal Gain vs. Ids and Vds at 2 GHz. 70 350 3V 4V 4.5V Ids (mA) Ids (mA) Figure 29. Small Signal Gain vs. Ids and Vds at 900 MHz. 300 7 GAIN (dB) & Pout (dBm) 200 250 9 3V 4V 4.5V 25 60 50 20 40 15 30 10 20 10 5 10 0 0 -10 Pin (dBm) Figure 33. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 900 MHz. PAE (%) 150 200 Figure 28. OIP3 vs Ids and Vds at 3.9 GHz. 17 7 100 150 Ids (mA) 19 GAIN (dB) GAIN (dB) 350 3V 4V 4.5V 20 Figure 27. OIP3 vs. Ids and Vds at 2 GHz. Figure 26. OIP3 vs Ids and Vds at 900 MHz. GAIN (dB) & Pout (dBm) 300 25 Ids (mA) Ids (mA) 88 250 30 -6 -2 2 6 10 14 0 Pin (dBm) Figure 34. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 900 MHz. PAE (%) 30 OIP3 (dBm) 45 OIP3 (dBm) OIP3 (dBm) ATF-52189 Typical Performance Curves, (at 25°C unless specified otherwise) Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA. ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA. 20 30 15 20 10 10 5 -2 2 6 10 14 18 40 20 30 15 20 10 5 0 0 -10 -6 -2 Pin (dBm) Gain_3V Pout_3V PAE_3V 35 60 30 50 40 15 30 10 20 5 -8 -4 0 4 8 18 40 30 15 20 10 10 0 0 -10 -6 -2 12 16 20 24 Gain_4V Pout_4V PAE_4V 25 35 60 30 50 30 10 20 10 5 0 0 Pin (dBm) Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. -4 0 4 8 12 6 10 14 18 0 Figure 37. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 2 GHz. 70 15 -8 2 Pin (dBm) 40 Figure 38. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 3.9 GHz. 99 14 20 PAE (%) GAIN (dB) & Pout (dBm) 70 20 0 10 50 20 5 Figure 36. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 2 GHz. GAIN (dB) & Pout (dBm) 35 25 6 25 Pin (dBm) Figure 35. Small Signal Gain/Pout/PAE vs. Pin at Vds = 3V and Frequency = 2 GHz. 30 2 Gain_4.5V Pout_4.5V PAE_4.5V 10 16 20 24 GAIN (dB) & Pout (dBm) -6 30 70 Gain_4.5V Pout_4.5V PAE_4.5V 25 60 50 20 40 15 30 10 20 10 5 10 0 0 Pin (dBm) Figure 39. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Frequency = 3.9 GHz. PAE (%) 0 -10 25 50 60 PAE (%) 40 Gain_4V Pout_4V PAE_4V 35 -8 -4 0 4 8 12 16 20 24 0 Pin (dBm) Figure 40. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4.5V and Frequency = 3.9 GHz. PAE (%) 30 60 GAIN (dB) & Pout (dBm) 50 PAE (%) GAIN (dB) & Pout (dBm) 25 35 PAE (%) Gain_3V Pout_3V PAE_3V 30 60 GAIN (dB) & Pout (dBm) 35 40 18 38 16 36 14 GAIN (dB) OIP3 (dBm) ATF-52189 Typical Performance Curves, continued Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA, Over Temperature and Frequency. 34 32 10 -40°C 25°C 80°C 30 28 0.5 12 1 1.5 -40°C 25°C 80°C 8 2 2.5 3 3.5 6 0.5 4 1 FREQUENCY (GHz) 29.5 55 29 50 PAE (%) 60 P1dB (dBm) 2.5 3 3.5 4 Figure 42. Gain vs. Temperature and Frequency at optimum P1dB. 30 28.5 45 40 28 -40°C 25°C 80°C 27.5 1 1.5 -40°C 25°C 80°C 35 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 43. P1dB vs. Temperature and Frequency at optimum P1dB. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 10 10 2 FREQUENCY (GHz) Figure 41. OIP3 vs. Temperature and Frequency at optimum P1dB. 27 0.5 1.5 30 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 44. PAE vs. Temperature and Frequency at optimum P1dB. 4 ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA. 17 45 16 40 35 OIP3 (dBm) 14 13 12 3.0V 4.0V 4.5V 11 10 100 150 200 250 300 350 30 25 3.0V 4.0V 4.5V 20 15 100 400 150 200 250 30 10 20 5 -2 2 6 10 14 18 40 15 30 10 20 10 5 10 0 0 -10 Pin (dBm) 30 15 30 10 20 5 10 -2 2 6 10 14 18 0 Pin (dBm) Figure 49. Small Signal Gain/Pout/PAE vs. Pin at Vds 4.5V and Freq = 2.4 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 11 11 PAE (%) GAIN (dB) & Pout (dBm) 50 40 -6 -2 2 6 10 14 18 0 Figure 48. Small Signal Gain/Pout/PAE vs. Pin at Vds 4V and Freq = 2.4 GHz. 60 Gain_4.5V Pout_4.5V PAE_4.5V 20 0 -10 -6 Pin (dBm) Figure 47. Small Signal Gain/Pout/PAE vs. Pin at Vds 3V and Freq = 2.4 GHz. 25 50 20 PAE (%) 30 GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 15 60 Gain_4V Pout_4V PAE_4V 25 50 40 -6 400 30 60 Gain_3V Pout_3V PAE_3V 20 0 -10 350 Figure 46. Small Signal Gain vs. Ids and Vds at 2.4 GHz. Figure 45. OIP3 vs. Ids and Vds at 2.4 GHz. 25 300 Ids (mA) Ids (mA) PAE (%) GAIN (dB) 15 ATF-52189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.5V, IDS = 280 mA Freq GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Mag. 0.544 0.704 0.777 0.813 0.856 0.866 0.872 0.874 0.876 0.880 0.881 0.882 0.879 0.874 0.882 0.889 0.903 0.918 0.948 0.960 0.941 0.946 0.937 0.914 0.951 0.948 0.939 0.948 0.947 0.903 S11 Ang. -91.7 -128.0 -146.6 -158.4 -171.5 -176.8 178.8 175.1 171.6 168.4 154.5 141.6 128.6 115.1 105.8 96.5 77.9 59.3 43.4 31.6 23.4 14.0 3.1 -3.8 -15.1 -19.8 -21.2 -24.7 -33.0 -45.1 Fmin dB 1.45 1.60 1.90 2.20 2.46 2.79 3.09 3.39 3.69 (dB) 31.93 29.23 26.78 24.74 21.75 20.26 19.00 17.92 16.96 16.08 12.74 10.39 8.63 7.31 6.39 5.36 2.83 -0.75 -3.31 -5.68 -8.20 -10.29 -12.11 -13.68 -15.70 -17.79 -18.56 -18.94 -17.99 -17.14 G amma Opt Mag Ang 0.704 -175.0 0.706 -162.6 0.727 -137.5 0.763 -112.8 0.804 -91.9 0.855 -68.9 0.896 -51.5 0.923 -38.6 0.930 -31.0 S21 Mag. 39.502 28.943 21.823 17.257 12.238 10.303 8.913 7.866 7.050 6.366 4.333 3.309 2.702 2.320 2.087 1.853 1.385 0.918 0.683 0.520 0.389 0.306 0.248 0.207 0.164 0.129 0.118 0.113 0.126 0.139 Rn/50 0.23 0.15 0.10 0.14 0.27 0.61 0.81 1.02 1.42 Ang. 144.2 122.7 109.6 100.6 93.9 89.3 85.4 81.8 78.4 75.3 61.0 47.5 34.1 20.5 9.7 -1.2 -22.8 -44.5 -63.8 -81.4 -96.9 -112.0 -128.9 -143.7 -163.9 -172.6 179.7 171.7 157.7 140.5 (dB) -39.17 -35.39 -33.98 -33.15 -33.98 -33.56 -33.56 -33.15 -32.77 -32.40 -31.06 -29.63 -28.18 -27.26 -26.92 -26.60 -25.98 -25.41 -26.02 -26.74 -28.18 -29.63 -32.77 -37.72 -37.08 -37.72 -41.94 -46.02 -38.42 -33.98 S12 Mag. 0.011 0.017 0.020 0.022 0.020 0.021 0.021 0.022 0.023 0.024 0.028 0.033 0.039 0.043 0.045 0.047 0.050 0.054 0.050 0.046 0.039 0.033 0.023 0.013 0.014 0.013 0.008 0.005 0.012 0.020 Ga dB 21.63 18.91 16.10 12.97 11.03 9.62 8.46 7.62 6.50 Ang. 52.6 40.4 33.2 28.6 26.1 25.4 25.1 25.0 25.0 25.0 24.2 21.5 16.7 9.6 3.3 -3.1 -15.7 -28.4 -39.9 -51.6 -63.8 -80.6 -113.1 -154.6 106.3 51.0 60.4 71.8 123.0 114.5 S22 Ang. -99.7 -130.4 -145.8 -155.3 -170.8 -174.5 -177.5 179.8 177.4 175.2 165.5 156.5 147.4 138.9 130.4 121.8 104.8 87.7 74.6 61.0 47.8 36.5 26.9 16.9 7.7 1.1 -4.4 -8.4 -13.3 -21.3 Mag. 0.289 0.397 0.446 0.470 0.551 0.559 0.562 0.564 0.564 0.563 0.558 0.549 0.542 0.543 0.560 0.578 0.613 0.648 0.687 0.729 0.773 0.805 0.825 0.843 0.842 0.849 0.879 0.876 0.884 0.859 MSG/MAG dB 35.55 32.31 30.38 28.95 27.87 26.91 26.28 25.53 24.86 24.24 21.90 18.26 16.05 14.47 13.83 13.09 11.24 8.51 8.14 7.41 4.33 3.52 2.11 -0.19 0.27 -2.38 -2.87 -2.64 -1.07 -3.66 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 0 S21 -10 -20 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 12 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 50. MSG/MAG & |S21|2 vs. Frequency at 4.5V/280 mA. ATF-52189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.5V, IDS = 200 mA Freq GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 S11 Mag. 0.848 0.856 0.863 0.868 0.882 0.885 0.886 0.886 0.885 0.887 0.886 0.886 0.881 0.879 0.885 0.891 0.903 0.915 0.948 0.960 0.941 0.945 0.938 0.914 0.953 0.946 0.939 0.948 0.947 0.900 Fmin dB 0.92 1.02 1.21 1.41 1.59 1.81 2.01 2.21 2.41 Ang. -84.4 -124.7 -144.9 -157.3 -170.8 -176.3 179.2 175.4 171.9 168.6 154.7 141.7 128.7 116.3 106.8 97.4 78.4 59.5 43.4 31.6 23.4 14.0 3.0 -3.7 -15.1 -19.8 -21.2 -24.7 -33.1 -45.1 (dB) 33.58 30.01 27.16 24.94 21.81 20.27 18.98 17.88 16.91 16.01 12.65 10.29 8.52 7.28 6.33 5.27 2.66 -1.10 -3.44 -5.78 -8.34 -10.40 -12.32 -13.89 -15.86 -17.92 -18.64 -19.17 -18.13 -17.27 G amma Opt Mag Ang 0.409 177.1 0.480 -169.1 0.602 -141.8 0.700 -115.6 0.772 -93.6 0.841 -69.9 0.891 -52.2 0.931 -39.1 0.965 -31.5 S21 Mag. 47.752 31.649 22.811 17.656 12.320 10.315 8.894 7.831 7.007 6.320 4.291 3.271 2.668 2.312 2.073 1.835 1.358 0.881 0.673 0.514 0.383 0.302 0.242 0.202 0.161 0.127 0.117 0.110 0.124 0.137 Rn/50 0.15 0.10 0.08 0.12 0.23 0.54 0.70 0.98 1.33 Ang. 136.0 114.6 102.9 95.1 89.4 85.5 82.0 78.8 75.8 72.9 59.3 46.3 33.1 20.4 9.5 -1.4 -23.2 -45.0 -64.1 -81.8 -97.0 -112.0 -129.2 -144.1 -164.5 -172.6 178.8 170.6 157.2 140.4 (dB) -37.08 -34.42 -33.15 -32.77 -33.56 -33.56 -33.15 -32.77 -32.40 -32.40 -30.75 -29.37 -28.18 -27.38 -27.01 -26.65 -25.98 -25.35 -26.02 -26.74 -28.18 -29.63 -33.15 -38.42 -37.72 -39.17 -43.10 -44.44 -38.42 -33.98 S12 Mag. 0.014 0.019 0.022 0.023 0.021 0.021 0.022 0.023 0.024 0.024 0.029 0.034 0.039 0.043 0.045 0.047 0.050 0.054 0.050 0.046 0.039 0.033 0.022 0.012 0.013 0.011 0.007 0.006 0.012 0.020 Ga dB 19.38 17.52 15.64 12.74 11.05 9.72 8.62 7.78 6.72 Ang. 51.6 35.9 28.7 24.7 22.5 22.2 22.1 22.1 22.3 22.4 22.1 19.7 15.0 8.7 2.5 -3.8 -16.3 -28.8 -40.5 -52.4 -64.2 -80.8 -113.9 -156.0 98.9 49.2 72.1 76.0 119.6 115.7 MSG/MAG dB 35.33 32.22 30.16 28.85 27.68 26.91 26.07 25.32 24.65 24.21 21.70 18.69 16.11 14.68 13.97 13.15 11.08 8.05 8.04 7.37 4.20 3.35 1.99 -0.42 0.22 -2.67 -2.97 -2.92 -1.28 -3.92 S22 Ang. -104.6 -136.7 -151.3 -159.9 -173.9 -177.2 -179.8 177.7 175.6 173.6 164.3 155.6 146.6 138.1 129.6 121.0 104.0 86.9 74.4 60.9 47.7 36.5 26.8 16.9 7.7 1.0 -4.5 -8.4 -13.2 -21.3 Mag. 0.360 0.442 0.473 0.487 0.562 0.567 0.568 0.568 0.567 0.566 0.560 0.549 0.543 0.548 0.564 0.580 0.613 0.645 0.686 0.729 0.772 0.805 0.826 0.843 0.843 0.849 0.877 0.874 0.883 0.859 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 0 S21 -10 -20 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 13 13 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 51. MSG/MAG & |S21|2 vs. Frequency at 4.5V/200 mA. ATF-52189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.5V, IDS = 120 mA Freq GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Mag. 0.926 0.891 0.882 0.879 0.885 0.886 0.886 0.886 0.885 0.887 0.884 0.884 0.880 0.875 0.882 0.889 0.903 0.917 0.947 0.959 0.941 0.946 0.936 0.914 0.951 0.948 0.937 0.949 0.947 0.906 Fmin dB 0.67 0.76 0.95 1.13 1.30 1.50 1.68 1.86 1.88 S11 Ang. -80.9 -121.5 -142.5 -155.4 -169.7 -175.4 -180.0 176.1 172.5 169.3 155.1 142.1 129.1 115.5 106.2 96.8 78.1 59.4 43.5 31.7 23.4 14.1 3.1 -3.7 -14.9 -19.8 -21.1 -24.5 -32.9 -45.1 (dB) 33.47 29.88 27.03 24.79 21.67 20.13 18.83 17.72 16.76 15.86 12.49 10.13 8.36 7.03 6.10 5.06 2.52 -1.09 -3.64 -6.00 -8.64 -10.69 -12.54 -14.24 -16.25 -18.34 -19.02 -19.66 -18.56 -17.79 G amma Opt Mag Ang 0.263 166.7 0.361 -177.3 0.524 -146.8 0.652 -118.4 0.741 -95.3 0.826 -70.9 0.887 -52.9 0.939 -39.7 0.989 -31.8 S21 Mag. 47.170 31.192 22.457 17.360 12.120 10.145 8.743 7.695 6.883 6.209 4.212 3.210 2.618 2.246 2.018 1.791 1.337 0.882 0.658 0.501 0.370 0.292 0.236 0.194 0.154 0.121 0.112 0.104 0.118 0.129 Rn/50 0.14 0.08 0.06 0.12 0.15 0.30 0.54 0.69 0.97 Ang. 135.8 114.3 102.7 94.8 88.9 85.0 81.6 78.4 75.3 72.4 58.8 45.7 32.5 18.9 8.1 -2.8 -24.5 -46.2 -65.5 -83.3 -98.9 -114.3 -131.4 -146.0 -166.9 -175.3 176.1 167.9 154.7 138.1 (dB) -35.92 -33.15 -32.04 -31.70 -32.77 -32.40 -32.40 -32.04 -31.70 -31.70 -30.46 -29.12 -27.96 -27.08 -26.80 -26.54 -26.04 -25.56 -26.20 -26.74 -28.40 -29.63 -33.15 -37.72 -37.72 -39.17 -40.92 -43.10 -37.72 -33.56 S12 Mag. 0.016 0.022 0.025 0.026 0.023 0.024 0.024 0.025 0.026 0.026 0.030 0.035 0.040 0.044 0.046 0.047 0.050 0.053 0.049 0.046 0.038 0.033 0.022 0.013 0.013 0.011 0.009 0.007 0.013 0.021 Ga dB 19.36 17.64 15.04 12.27 10.83 9.62 8.48 7.85 4.25 Ang. 51.6 34.6 26.7 22.2 19.7 19.0 18.6 18.5 18.4 18.3 17.8 15.6 11.2 4.9 -1.1 -7.1 -19.0 -31.0 -42.2 -53.9 -65.8 -82.9 -116.4 -159.1 104.3 56.9 79.5 74.4 117.9 111.8 S22 Ang. -96.0 -131.4 -147.6 -157.0 -172.5 -176.0 -178.8 178.7 176.5 174.4 165.1 156.3 147.4 139.0 130.5 122.0 105.1 88.1 75.1 61.6 48.2 36.9 27.2 17.2 8.0 1.2 -4.2 -8.2 -13.1 -21.1 Mag. 0.389 0.447 0.471 0.482 0.551 0.555 0.557 0.557 0.555 0.554 0.548 0.538 0.532 0.532 0.549 0.567 0.603 0.638 0.681 0.725 0.770 0.805 0.826 0.843 0.843 0.850 0.877 0.878 0.887 0.862 MSG/MAG dB 34.70 31.52 29.53 28.25 27.22 26.26 25.61 24.88 24.23 23.78 21.47 19.17 16.16 14.43 13.76 12.99 11.06 8.23 7.89 7.19 4.00 3.26 1.71 -0.74 -0.35 -2.88 -3.46 -3.21 -1.56 -4.11 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 0 S21 -10 -20 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 14 14 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 52. MSG/MAG & |S21|2 vs. Frequency at 4.5V/120 mA. ATF-52189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 200 mA Freq GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 S11 Mag. 0.866 0.865 0.868 0.870 0.884 0.886 0.887 0.887 0.886 0.888 0.886 0.885 0.881 0.868 0.876 0.884 0.901 0.917 0.947 0.960 0.941 0.947 0.938 0.914 0.954 0.948 0.937 0.949 0.947 0.902 Fmin dB 0.61 0.75 1.03 1.30 1.56 1.86 2.14 2.42 2.70 Ang. -84.2 -124.5 -144.8 -157.3 -170.8 -176.3 179.2 175.4 171.9 168.7 154.7 141.7 128.7 113.6 104.5 95.5 77.3 59.2 43.4 31.6 23.4 14.1 3.0 -3.7 -15.0 -19.9 -21.1 -24.6 -33.0 -45.1 (dB) 33.69 30.08 27.22 24.98 21.85 20.30 19.01 17.91 16.94 16.05 12.68 10.33 8.57 7.16 6.24 5.21 2.70 -0.84 -3.38 -5.73 -8.27 -10.34 -12.18 -13.85 -15.76 -17.79 -18.49 -18.86 -17.86 -17.20 G amma Opt Mag Ang 0.434 175.5 0.490 -170.4 0.595 -142.6 0.689 -116.0 0.763 -93.9 0.837 -70.1 0.887 -52.4 0.918 -39.2 0.929 -31.4 S21 Mag. 48.364 31.913 22.964 17.748 12.369 10.356 8.926 7.862 7.033 6.344 4.307 3.284 2.681 2.280 2.051 1.823 1.365 0.908 0.678 0.517 0.386 0.304 0.246 0.203 0.163 0.129 0.119 0.114 0.128 0.138 Rn/50 0.14 0.09 0.08 0.11 0.19 0.55 0.70 0.95 1.34 Ang. 135.7 114.3 102.7 94.9 89.3 85.4 82.0 78.8 75.8 72.9 59.5 46.5 33.3 18.8 8.3 -2.2 -23.3 -44.3 -63.3 -80.8 -96.1 -111.3 -128.0 -142.4 -162.4 -171.0 -178.9 173.5 158.9 141.5 (dB) -37.08 -33.98 -33.15 -32.77 -33.56 -33.56 -33.15 -32.77 -32.40 -32.40 -30.75 -29.37 -28.18 -26.94 -26.66 -26.39 -25.88 -25.40 -26.02 -26.74 -28.18 -29.90 -33.15 -38.42 -37.72 -39.17 -43.10 -44.44 -38.42 -33.98 S12 Mag. 0.014 0.020 0.022 0.023 0.021 0.021 0.022 0.023 0.024 0.024 0.029 0.034 0.039 0.045 0.046 0.048 0.051 0.054 0.050 0.046 0.039 0.032 0.022 0.012 0.013 0.011 0.007 0.006 0.012 0.020 Ga dB 19.42 17.66 15.68 12.74 11.11 9.71 8.56 7.89 6.79 Ang. 51.3 35.7 28.6 24.5 22.6 22.3 22.1 22.3 22.4 22.6 22.3 19.7 15.0 7.5 1.3 -4.9 -17.3 -29.7 -40.8 -52.8 -64.6 -80.9 -114.7 -156.1 100.7 49.4 72.7 78.5 119.1 116.4 S22 Ang. -106.5 -138.0 -152.3 -160.7 -174.3 -177.5 179.8 177.4 175.2 173.2 164.0 155.1 146.1 137.6 129.1 120.6 103.7 86.7 73.8 60.3 47.2 36.1 26.5 16.7 7.4 0.8 -4.6 -8.6 -13.3 -21.4 Mag. 0.366 0.451 0.483 0.498 0.572 0.577 0.579 0.579 0.578 0.577 0.570 0.560 0.554 0.549 0.566 0.584 0.618 0.653 0.691 0.732 0.774 0.807 0.826 0.844 0.843 0.849 0.876 0.873 0.881 0.856 MSG/MAG dB 35.38 32.03 30.19 28.87 27.70 26.93 26.08 25.34 24.67 24.22 21.72 18.68 16.18 14.17 13.55 12.84 11.06 8.44 8.02 7.39 4.27 3.57 2.13 -0.36 0.47 -2.37 -2.98 -2.54 -1.06 -3.85 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 0 S21 -10 -20 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 15 15 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 53. MSG/MAG & |S21|2 vs. Frequency at 4.0V/200 mA. ATF-52189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 200 mA Freq GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Mag. 0.880 0.882 0.885 0.886 0.893 0.894 0.893 0.892 0.891 0.893 0.889 0.887 0.882 0.869 0.877 0.885 0.901 0.916 0.947 0.960 0.941 0.945 0.937 0.914 0.953 0.947 0.939 0.949 0.948 0.902 Fmin dB 0.75 0.84 1.00 1.17 1.32 1.50 1.67 1.83 2.00 S11 Ang. -81.4 -121.9 -143.0 -156.1 -170.1 -175.8 179.6 175.6 172.1 168.8 154.6 141.6 128.6 113.5 104.4 95.4 77.2 59.1 43.2 31.5 23.2 13.9 2.9 -4.0 -15.3 -20.2 -21.6 -25.0 -33.4 -45.7 (dB) 33.44 29.97 27.17 24.96 21.77 20.22 18.93 17.83 16.86 15.96 12.60 10.26 8.50 7.10 6.18 5.16 2.66 -0.87 -3.36 -5.68 -8.18 -10.20 -12.04 -13.60 -15.55 -17.46 -18.20 -18.49 -17.39 -16.71 G amma Opt Mag Ang 0.341 174.7 0.427 -171.1 0.573 -143.2 0.688 -116.6 0.769 -94.3 0.847 -70.4 0.903 -52.6 0.951 -39.3 0.996 -31.6 S21 Mag. 46.976 31.521 22.842 17.691 12.257 10.259 8.842 7.786 6.967 6.281 4.265 3.258 2.660 2.264 2.037 1.811 1.358 0.904 0.679 0.520 0.390 0.309 0.250 0.209 0.167 0.134 0.123 0.119 0.135 0.146 Rn/50 0.11 0.08 0.06 0.11 0.20 0.45 0.66 0.85 1.10 Ang. 136.0 115.1 103.3 95.3 89.6 85.7 82.3 79.1 76.1 73.3 60.0 47.2 34.2 19.8 9.5 -0.9 -21.6 -42.2 -60.8 -77.8 -92.9 -107.4 -124.1 -137.8 -157.2 -165.2 -173.2 178.6 164.0 147.2 (dB) -35.92 -33.15 -32.40 -32.04 -33.15 -32.77 -32.77 -32.40 -32.40 -32.04 -30.75 -29.37 -27.96 -26.74 -26.50 -26.27 -25.82 -25.39 -26.02 -26.74 -28.18 -29.90 -33.15 -38.42 -37.72 -39.17 -43.10 -44.44 -37.72 -33.98 S12 Mag. 0.016 0.022 0.024 0.025 0.022 0.023 0.023 0.024 0.024 0.025 0.029 0.034 0.040 0.046 0.047 0.049 0.051 0.054 0.050 0.046 0.039 0.032 0.022 0.012 0.013 0.011 0.007 0.006 0.013 0.020 Ga dB 21.18 19.42 17.13 14.59 10.99 9.83 8.48 7.61 4.30 Ang. 53.2 35.2 26.7 22.1 20.0 19.6 19.7 19.9 20.2 20.5 21.2 19.3 14.6 6.9 0.6 -5.7 -18.4 -31.0 -42.3 -54.2 -66.1 -82.6 -116.2 -158.8 100.1 50.2 73.3 81.7 121.3 117.2 MSG/MAG dB 34.68 31.56 29.79 28.50 27.46 26.49 25.85 25.11 24.63 24.00 21.68 18.87 16.25 14.22 13.59 12.87 11.07 8.45 8.06 7.42 4.41 3.57 2.23 -0.08 0.64 -2.10 -2.59 -2.23 -0.58 -3.52 S22 Ang. -106.9 -138.1 -152.9 -161.6 -174.8 -178.2 179.1 176.6 174.4 172.3 162.8 153.7 144.5 135.8 127.3 118.8 101.7 84.7 71.9 58.6 45.7 34.8 25.3 15.6 6.5 -0.1 -5.3 -9.2 -14.1 -22.1 Mag. 0.374 0.488 0.529 0.545 0.614 0.618 0.619 0.618 0.617 0.616 0.608 0.597 0.591 0.585 0.600 0.616 0.647 0.678 0.711 0.747 0.785 0.813 0.830 0.845 0.843 0.848 0.874 0.870 0.876 0.849 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 0 S21 -10 -20 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 16 16 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 54. MSG/MAG & |S21|2 vs. Frequency at 3.0V/200 mA. Device Models, PCB Layout and Stencil Device Refer to Avago’s Web Site: www.avagotech.com/view/rf Part Number Ordering Information Part Number No of devices Container ATF-52189-BLKG 100 7” Tape/Reel ATF-52189-TR1G 3000 13” Tape/Reel SOT89 Package Dimensions D D D1 D1 POLISH E1 OR E1 E L L e e S S e1 C e1 1.625 D2 MATTE FINISH HALF ETCHING DEPTH 0.100 1.23 2.35 0.77 0.2 D1 E b b1 b POLISH 1.24 E A OR b1 Dimensions in mm Symbols 17 Minimum Nominal Dimensions in inches Maximum Minimum Nominal Maximum A 1.40 1.50 1.60 0.055 0.059 0.063 L 0.89 1.04 1.20 0.0350 0.041 0.047 b 0.36 0.42 0.48 0.014 0.016 0.018 b1 0.41 0.47 0.53 0.016 0.018 0.030 0.017 C 0.38 0.40 0.43 0.014 0.015 D 4.40 4.50 4.60 0.173 0.177 0.181 D1 1.40 1.60 1.75 0.055 0.062 0.069 D2 1.45 1.65 1.80 0.055 0.062 0.069 E 3.94 - 4.25 0.155 - 0.167 E1 2.40 2.50 2.60 0.094 0.098 0.102 e1 2.90 3.00 3.10 0.114 0.118 0.122 S 0.65 0.75 0.85 0.026 0.030 0.034 e 1.40 1.50 1.60 0.054 0.059 0.063 Device Orientation USER FEED DIRECTION 2GX 2GX 2GX CARRIER TAPE 2GX REEL COVER TAPE Tape Dimensions Ø 1.5 +0.1/-0.0 8.00 0.30 ± .05 Ø 1.50 MIN. 2.00 ± .05 SEE NOTE 3 4.00 SEE NOTE 1 A R 0.3 MAX. 1.75 ± .10 5.50 ± .05 SEE NOTE 3 Bo 12.0 ± .3 Ko SECTION A - A 18 Ao Ao = 4.60 Bo = 4.90 Ko = 1.90 R 0.3 TYP. A DIMENSIONS IN MM NOTES: 1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2 2. CAMBER IN COMPLIANCE WITH EIA 481 3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE Reel Dimensions – 13” Reel R LOKREEL R MINNEAPOLIS USA U.S PAT 4726534 102.0 REF 1.5 ATTENTION Electrostatic Sensitive Devices Safe Handling Required 88 REF 330.0 REF "A" 96.5 6 PS Detail "B" 6 PS Detail "A" 8.4 - 0.2 (MEASURED AT HUB) 11.1 MAX. Ø 20.2 Dimensions in mm M IN +0.5 Ø 13.0 -0.2 2.0 ± 0.5 For product information and a complete list of distributors, please go to our web site: +0.3 (MEASURED AT HUB) www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. AV02-0050EN - November 11, 2013