HDJD-JD02

Agilent HDJD-S722-QR999 Color Sensor Data Sheet Description Agilent color sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic CMOS IC solution. With a Red (R), Green (G) and Blue (B) color filters coated over the photodiode array, the sensor converts R, G, B light to analog voltage outputs, denoted by VROUT, VGOUT and VBOUT, respectively. The sensor is packaged in a 5x5x1 (mm) surface mount QFN-16 package. Applications Agilent color sensor is ideal for open-loop color identification and closed-loop color point control. The sensor is designed for low illuminance applications including color detection, environmental lighting, industrial process, etc. With R, G, B photo-sensor and amplifier integrated in a single 5x5x1 (mm) package, Agilent color sensor provides a high performance, small in size and cost effective solution to color sensing. Features • Convert light to R, G, B voltage output • Monolithic CMOS IC solution with integrated R, G, B color filter, photodiode array, transimpedance amplifier in one chip • 3 sets of 3x3 photodiode array design minimize the effect of contamination and optical aperture misalignment • Small in size 5x 5x1 mm • Independent gain selection options for each R, G, B channel ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. Package Dimension 5 6 7 8 4 9 3 10 2 11 1 12 16 15 14 13 BOTTOM VIEW 16L QFN 5X5 (0.8) (0.3) 5.0 ± 0.15 (3.2) (3.2) 5.0 ± 0.15 1.0 ± 0.15 NOTE: DIMENSIONS ARE IN MILLIMETERS (mm) ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 2 Part Numbering System HDJD-S 7 X X-X X X X X Gain Selection (GS) Option 999: GS 00,01 or 10 Packaging Type R: Tape and Reel Product Packaging Q: QFN Product ID 22: Component without IR Filter Pin Out for HDJD-S722-QR999 Pin Pin Name Normal Operation Pin 1 VBOUT Analog output voltage for BLUE Pin 2 VGOUT Analog output voltage for GREEN Pin 3 VROUT Analog output voltage for RED Pin 4 VDD 5 V DC Supply Pin 5 GND Ground Pin 6 GSGRN1 Gain Selection Green bit 1 Pin 7 GND Ground Pin 8 GSRED1 Gain Selection Red bit 1 Pin 9 GSRED0 Gain Selection Red bit 0 Pin 10 NC No connection Pin 11 NC No connection Pin 12 GSBLUE0 Gain Selection Blue bit 0 Pin 13 GSBLUE1 Gain Selection Blue bit 1 Pin 14 GND Ground Pin 15 GSGRN0 Gain Selection Green bit 0 Pin 16 GND Ground ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 3 Theory of Operation The integral R, G, B color filters on the photodiode array detect the R, G, B components of the light falling on the sensor. The photodiode converts the R, G, B light components into photocurrents. The integrated transimpedence amplifiers for R, G, B components then convert the photocurrent to analog voltage outputs. The voltage output of each R, G, B channel increases linearly with increasing light intensity. Sensor IC Block Diagram GS (1:0) RF CF VDD5 – + GND VROUT TRANSIMPEDANCE AMP GS (1:0) RF CF GSRED (1:0) GSGRN (1:0) RED GAIN SELECTION – + VGOUT TRANSIMPEDANCE AMP GREEN GAIN SELECTION GS (1:0) RF CF GSBLUE (1:0) BLUE GAIN SELECTION – + VBOUT TRANSIMPEDANCE AMP Absolute Maximum Ratings[1,2] Parameter Symbol Min. Max. Unit Supply Voltage VDD 4.5 5.5 V Storage Temperature TS -40 100 °C Operating Temperature TA -40 85 °C Human Body Model ESD Rating ESDHBM 1 kV Notes Notes: 1. Subjecting the part to stresses beyond those listed under this section may cause permanent damage to the device. These are stress ratings only and do not imply that the devices will function beyond these ratings. Exposure to the extremes of these conditions for extended periods may affect device reliability. 2. Unless otherwise specified, voltages are referenced to ground. Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Units Operating Temperature TA 0 25 70 °C Supply Voltage VDD 4.5 5.0 5.5 V Notes A decoupling capacitor of 100 nF between VDD and ground is recommended. ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 4 Operating Conditions and Electrical Requirements Electrical Characteristics at VDD = 5 V, TA = 25°C, RL = 68 kΩ Parameter Symbol Remark Dark Voltage VD Ee = 0 Min. Typ. Max. Unit 15 mV Max. Output Voltage Swing VOMAX 4.8 V Supply Current IDD Ee = 0 2.5 mA Output Rise Time tr Min Vo = 0 V, Peak Vo = 4.3 V 5 µs Output Fall Time tf Min Vo = 0 V, Peak Vo = 4.3 V 5 µs GS:10, lP = 460 nm[1] (Blue Channel) 15 GS:10, lP = 542 nm[2] (Green Channel) 19 GS:10, lP = 645 nm[3] (Red Channel) 27 GS:01, lP = 460 nm[1] (Blue Channel) 9 GS:01, lP = 542 nm[2] (Green Channel) 11 GS:01, lP = 645 nm[3] (Red Channel) 16 GS:00, lP = 460 nm[1] (Blue Channel) 5 GS:00, lP = 542 nm[2] (Green Channel) 6 GS:00, lP = 645 nm[3] (Red Channel) 9 GS:10, lP = 460 nm[1] (Blue Channel) 0.32 GS:10, lP = 542 nm[2] (Green Channel) 0.25 GS:10, lP = 645 nm[3] (Red Channel) 0.18 GS:01, lP = 460 nm[1] (Blue Channel) 0.53 GS:01, lP = 542 nm[2] (Green Channel) 0.44 GS:01, lP = 645 nm[3] (Red Channel) 0.30 GS:00, lP = 460 nm[1] (Blue Channel) 0.96 GS:00, lP = 542 nm[2] (Green Channel) 0.80 GS:00, lP = 645 nm[3] (Red Channel) 0.53 Irradiance Responsivity Irradiance Responsivity Irradiance Responsivity Saturation Irradiance[4] Saturation Irradiance[4] Saturation Irradiance[4] Re Re Re V/(mW/cm2) V/(mW/cm2) V/(mW/cm2) mW/cm2 mW/cm2 mW/cm2 Notes: 1. 2. 3. 4. Test condition: using blue diffuse light of peak wavelength (lP) 460 nm and spectral half width (Dl1/2) 25 nm as light source. Test condition: using green diffuse light of peak wavelength (lP) 542 nm and spectral half width (Dl1/2) 35 nm as light source. Test condition: using red diffuse light of peak wavelength (lP) 645 nm and spectral half width (Dl1/2) 20 nm as light source. Saturation irradiance = (Max. output voltage swing)/(Irradiance responsivity). ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 5 Gain Selection Feedback Resistor Table GS: Bit 1 Bit 0 Feedback Resistor, RF 0 0 4 MΩ 0 1 7 MΩ 1 0 12 MΩ Notes: 1. Gains selections, GS: Bit 1 Bit 0 are applicable for each Red, Green and Blue Channel. 2. Gain selections for each channel can be selected independently of each other. 3. Feedback resistor value is proportional to responsivity. Refer to block diagram below. 4. 0 indicates that the pin is connected to ground. 1 indicates no connection. GS (1:0) RF CF – + TRANSIMPEDANCE AMP Typical Characteristics 1.2 NORMALIZED SENSITIVITY 1.0 RED 0.8 0.6 GREEN 0.4 BLUE 0.2 0 350 450 550 650 750 WAVELENGTH (nm) Figure 1. Spectral responsivity. Note: Test condition is when Gain Selection Jumpers are set to GSBLUE1=0 GSGRN1=0 GSRED1=0 GSBLUE0=1 GSGRN0=1 GSRED0=1 in which 0 = connect to Ground, 1 = no connection. Refer to Gain Selection Feedback Resistor Table. ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 6 4.8 4.4 0.025 4.0 VOLTAGE OUTPUT – VO (V) VD – DARK VOLTAGE (V) 0.03 0.02 0.015 0.01 0.005 0 -40 -20 0 20 60 40 80 GS:10 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 4.8 4.4 GS:00 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 0.4 0.8 0.6 1.0 Figure 3. Voltage output of Blue Channel vs. irradiance (lp = 460 nm). VOLTAGE OUTPUT – VO (V) VOLTAGE OUTPUT – VO (V) 4.0 3.6 0.2 IRRADIANCE – Ee (mW/cm2) Figure 2. Dark voltage vs. operating temperature. GS:10 GS:01 GS:00 3.6 3.2 TA – OPERATING TEMPERATURE (°C) 4.8 4.4 GS:01 1.0 IRRADIANCE – Ee (mW/cm2) Figure 4. Voltage output of Green Channel vs. irradiance (lp = 542 nm). GS:10 4.0 3.6 GS:01 GS:00 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 IRRADIANCE – Ee (mW/cm2) Figure 5. Voltage output of Red Channel vs. irradiance (lp = 645 nm). ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 7 Recommended Reflow Profile It is recommended that Henkel Pb- free solder paste LF310 be used for soldering HDJD-S722-QR999. Below is the recommended reflow profile. T-peak T-reflow 230 ± 5°C/sec. 218°C/sec. DELTA-FLUX = 2°C/sec. max. TEMPERATURE T-max. T-min. DELTA-COOLING = 2°C/sec. max. 160°C 120°C DELTA-RAMP = 1°C/sec. max. 40-60 sec. max. 20-40 sec. max. t-pre t-peak TIME Figure 6. Recommended reflow soldering profile. ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 8 16 Lead QFN Recommended PCB Land Pad Design IPC-SM-782 is used as the standard for the PCB land-pad design. Recommended PCB finishing is OSP. 0.8 mm 0.4 mm 0.8 mm 3.19 mm 5.5 mm 3.19 mm 3.9 mm 5.5 mm Figure 7. 16 Lead QFN Recommended Stencil Design A stencil thickness of 2.18 mm (6 mils) for this QFN package is recommended. 0.8 mm Recommendations for Handling and Storage of HDJD-S722-QR999 • Before opening the MBB (Moisture Barrier Bag) – The sensor component must be kept sealed in a MBB (Moisture Barrier Bag) stored at 30°C and 70% RH or less at all times. • After opening the MBB (Moisture Barrier Bag) – The sensor component must be kept at 30°C and 60% RH or less. – The sensor component should have a MET (Manufacturing Exposure Time) of 24 hours starting from the time of removal from the MBB to the soldering oven. – If unused sensor components remain, it is recommended to store them back in the MBB. – If the indicator card has turned from blue to pink or it has exceeded the recommended MET (Manufacturing Exposure Time) of 24 hrs, baking treatment should be performed using the following conditions before continuing to IR reflow soldering. – Baking treatment: 24 hours at 125°C. 0.4 mm 0.8 mm 2.18 mm Figure 8. ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 9 Package Tape and Reel Dimensions Carrier Tape Dimensions 4.00 ± 0.10 SEE NOTE #2 ∅1.55 ± 0.05 2.00 ± 0.05 SEE NOTE #2 B R 0.50 TYP. 1.75 ± .10 5.50 ± 0.05 12.00 ± 0.10 Bo A Ko A 8.00 ± 0.10 B ∅1.50 (MIN.) SECTION B-B Ao Ao: Bo: Ko: PITCH: WIDTH: 0.30 ± 0.05 SECTION A-A 5.30 5.30 2.20 8.00 12.00 NOTES: 1. Ao AND Bo MEASURED AT 0.3 mm ABOVE BASE OF POCKET. 2. 10 PITCHES CUMULATIVE TOLERANCE IS ± 0.2 mm. 3. DIMENSIONS ARE IN MILLIMETERS (mm). Reel Dimensions 65° +1.5* 12.4 –0.0 45° R10.65 R5.2 ∅55.0 ± 0.5 45° ∅178.0 ± 0.5 ∅176.0 EMBOSSED RIBS RAISED: 0.25 mm WIDTH: 1.25 mm BACK VIEW ∅512 18.0 MAX.* NOTES: 1. *MEASURED AT HUB AREA. 2. ALL FLANGE EDGES TO BE ROUNDED. ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge. 10 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. March 29, 2005 5989-1984EN