HPND-4005

HPND- 4005 Beam Lead PIN Diode Data Sheet Description Features The HPND-4005 planar beam lead PIN diode is ­constructed to offer exceptional lead strength while achieving excellent elec­tri­cal performance at high ­frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance ­allows high isola­tion to be realized. • • • • • High Breakdown Voltage: 120 V Typical Low Capacitance: 0.017 pF Typical Low Resistance: 4.7 W Typical Rugged Construction: 4 Grams Minimum Lead Pull Nitride Passivated Nitride passivation and poly­imide coating provide ­reliable device protection. Outline 21 Applications The HPND-4005 beam lead PIN diode is designed for use in stripline or microstrip circuits. Applications include switching, attenuating, phase shifting, limiting, and modulating at microwave fre­quencies. The extremely low capaci­tance of the HPND-4005 makes it ideal for circuits requiring high isolation in a series diode configuration. GOLD LEADS S 1 O 2 /Si 3 N 4 PASSIVATION CATHODE 130 (5.1) 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) Maximum Ratings Operating Temperature -65°C to +175°C Storage Temperature -65°C to +200°C Power Dissipation at TCASE = 25°C   (Derate linearly to zero at 175°C.) 250 mW Minimum Lead Strength 4 grams pull on either lead Diode Mounting Temp 220°C for 10 sec. max. 760 (29.9) 640 (25.2) 8 (0.3) Min. 220 (8.7) 180 (7.1) DIMENSIONS IN µm (1/1000 inch) 320 (12.6) 280 (11.0) 60 (2.4) 30 (1.2) SILICON GLASS 220 (8.7) 180 (7.1) 25 MIN (1.0)  Electrical Specifications at TA = 25°C Part Number Breakdown Voltage Series Resistance VBR (V) RS (Ω)[2] Capacitance CT (pF)[1,2] HPND- Min. Typ. Typ. Max. Typ. 4005 100 120 4.7 6.5 0.017 Test Conditions IR = 10 mA IF = 20 mA IF = 100 MHz Forward Voltage VF (V) Reverse Current IR (nA) Minority Carrier Lifetime τ (ns)[2] Max. Max. Max. Min. Typ. 0.02 1.0 100 50 100 IF= 20 mA VR = 30 V IF = 10 mA IR = 6 mA VR = 10 V f = 10 GHz Notes: 1. Total capacitance calculated from measured isolation value in a series configuration. 2. Test performed on packaged samples. 10,000 10 1000 0.1 0.01 0.25 0.50 0.75 1.00 1.25 V F - FORWARD VOLTAGE (V) CAPACITANCE (PF) 0.06 0.04 0.02 0 10 10 1 0.01 0.1 1 10 Figure 2. Typical RF Resistance vs. Forward Bias Current. 0.08 0 100 I F - FORWARD BIAS CURRENT (mA) Figure 1. Typical Forward Conduction Characteristics. 20 REVERSE VOLTAGE (V) Figure 4. Typical Capacitance at 10 GHz vs. Reverse Bias. 30 ISOLATION AT: - 30V - 10V 30 ISOLATION (dB) 1 40 100 20 10 1 INSERTION LOSS AT: 10 mA 20 mA 50 mA 1 1 FREQUENCY (GHz) Figure 3. Typical Isolation and Insertion Loss in the Series Configuration (Z O = 50 ½). 0 18 0 INSERTION LOSS (dB) 100 RF RESISTANCE (OHMS) I F - FORWARD CURRENT (mA) Typical Parameters Bonding and Handling Procedures for Beam Lead Diodes 4. Bonding 1. Storage Thermocompression: See Application Note 979 “The Handling and Bonding of Beam Lead Devices Made Easy”. This method is good for hard substrates only. Under normal circumstances, storage of beam lead diodes in Avago-supplied waffle/gel packs is sufficient. In particularly dusty or chemically hazardous environments, storage in an inert atmosphere desiccator is advised. 2. Handling In order to avoid damage to beam lead devices, particular care must be exercised during inspection, testing, and assembly. Although the beam lead diode is designed to have exceptional lead strength, its small size and delicate nature requires that special handling techniques be observed so that the devices will not be mechanically or electrically damaged. A vacuum pickup is recommended for picking up beam lead devices, particularly larger ones, e.g., quads. Care must be exercised to assure that the vacuum opening of the needle is sufficiently small to avoid passage of the device through the opening. A #27 tip is recommended for picking up single beam lead devices. A 20X magnification is needed for precise positioning of the tip on the device. Where a vacuum pickup is not used, a sharpened wooden Q-tip dipped in isopropyl alcohol is very commonly used to handle beam lead devices. 3. Cleaning For organic contamination use a warm rinse of trichloroethane, or its locally approved equivalent, followed by a cold rinse in acetone and methanol. Dry under infrared heat lamp for 5–10 minutes on clean filter paper. Freon degreaser, or its locally approved equivalent, may replace trichloroethane for light organic contamination. • Ultrasonic cleaning is not recommended. • Acid solvents should not be used. Wobble: This method picks up the device, places it on the substrate and forms a thermo-compression bond all in one operation. This is described in the latest version of MIL-STD-883, Method 2017, and is intended for hard substrates only. Resistance Welding or ­Parallel-GAP Welding: To make welding on soft substrates easier, a low pressure welding head is recommended. Suitable equipment is available from HUGHES, Industrial Products Division in Carlsbad, CA. Epoxy: With solvent free, low resistivity epoxies (available from ABLESTIK and improvements in dispensing equipment, the quality of epoxy bonds is sufficient for many applications. 5. Lead Stress In the process of bonding a beam lead diode, a certain amount of “bugging” occurs. The term bugging refers to the chip lifting away from the substrate during the bonding process due to the deformation of the beam by the bonding tool. This effect is beneficial as it provides stress relief for the diode during thermal cycling of the substrate. The coefficient of expansion of some substrate materials, specifically soft substrates, is such that some bugging is essential if the circuit is to be operated over wide temperature extremes. Thick metal clad ground planes restrict the thermal expansion of the dielectric substrates in the X-Y axis. The expansion of the dielectric will then be mainly in the Z axis, which does not affect the beam lead device. An alternate solution to the problem of dielectric ground plane expansion is to heat the substrate to the maximum required operating temperature during the beam lead attachment. Thus, the substrate is at maximum expansion when the device is bonded. Subsequent cooling of the substrate will cause bugging, similar to bugging in thermocompression bonding or epoxy bonding. Other methods of bugging are preforming the leads during assembly or prestressing the substrate.  For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved. Obsoletes 5965-8877E AV01-0593EN - October 12, 2006