HSCH-5312

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331. The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz. Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device Bonding to Soft Substances. Features • Platinum tri-metal system High temperature stability • Silicon nitride passivation Stable, reliable performance • Low noise figure Guaranteed 7.5 dB at 26 GHz • High uniformity Tightly controlled process insures uniform RF characteristics • Rugged construction 4 grams minimum lead pull • Low capacitance 0.10 pF max. at 0 V • Polyimide scratch protection Outline 07 CATHODE GOLD LEADS 130 (5) 100 (4) 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7) 8 Min. (.3) 30 MIN (1) SILICON GLASS 710 (28) 670 (26) DIMENSIONS IN µm (1/1000 inch) 60 (2) 40 (1) Maximum Ratings Pulse Power Incident at TA = 25°C ........................................................ 1 W Pulse Width = 1 ms, Du = 0.001 CW Power Dissipation at TA = 25°C ............................................... 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR – Operating Temperature Range ............................. -65°C to +175 °C TSTG – Storage Temperature Range ................................... -65°C to +200°C Minimum Lead Strength ...................................... 4 grams pull on any lead Diode Mounting Temperature .............................. +350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C Part Number HSCH- Barrier 5314 Medium 5340 Low Min. Max. Max. SWR Min. Breakdown Voltage VBR (V) 7.2 at 16 GHz 200 400 1.5:1 4 7.5 at 26 GHz 150 350 Max. Noise Figure NF (dB) Test Conditions *Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap). 2 IF Impedance Ω) ZIF (Ω DC Load Resistance - 0 Ω LO Power = 1 mW IF = 30 MHz, 1.5 dB NF IR ≤ 10 µA Max. Dynamic Resistance Ω) RD (Ω Max. Total Capacitance CT (pF) Max. Forward Voltage VF (mV) Max. Leakage Current IR (nA) 16 0.15 500 100 20 0.10 375 400 IF = 5 mA VR = 0 V f = 1 MHz IF = 1 mA VR = 1 V Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C Part Number HSCH- Batch* Matched HSCH- 5312 5310 5332 5330 5331 Test Conditions ∆VF ≤ 15 mV @ 5 mA Barrier Minimum Breakdown Voltage VBR (V) Maximum Dynamic Resistance Ω) RD (Ω Maximum Total Capacitance CT (pF) Maximum Forward Voltage VF (mV) Maximum Leakage Current IR (nA) Medium 4 16 20 0.15 0.10 500 100 Low 4 16 20 0.15 0.10 375 400 IR ≤ 10 µA IF = 5 mA VR = 0 V f = 1 MHz IF = 1 mA VR = 1 V *Minimum batch size 20 units. Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions TSS –54 dBm Voltage Sensitivity γ 6.6 mV/µW 20 µA Bias, RL = 100 kΩ Video Bandwidth = 2 MHz f = 10 GHz Video Resistance RV 1400 Ω Symbol Typical Value Units Test Conditions TSS –44 dBm Voltage Sensitivity γ 10 mV/µW Zero Bias, RL = 10 MΩ Video Bandwidth = 2 MHz f = 10 GHz Video Resistance RV 1.8 MΩ Tangential Sensitivity Low Barrier (Zero Bias) Parameter Tangential Sensitivity SPICE Parameters Parameter BV CJO EG IBV IS N RS PB PT M 3 Units V pF eV A A Ω V HSCH-5312 HSCH-5314 5 0.13 0.69 10E-5 3 x 10E-10 1.08 9 0.65 2 0.5 HSCH-5310 5 0.09 0.69 10E-5 3 x 10E-10 1.08 13 0.65 2 0.5 HSCH-5330 HSCH-5340 5 0.09 0.69 10E-5 4 x 10E-8 1.08 13 0.5 2 0.5 HSCH-5332 5 0.13 0.69 10E-5 4 x 10E-8 1.08 9 0.5 2 0.5 Typical Parameters 100 10 1 0.1 1 0.4 0.6 0.8 6.5 0.15 pF 6.0 0.25 pF 5.5 1.0 0 0.2 0.4 0.6 5.0 0.8 0 4 2 Figure 1. Typical forward characteristics for medium barrier beam lead diodes. HSCH-5310 series. 16 0.5 2.0 26 GHz 5.0 2.0 0.2 20 10.0 3.0 5.0 150 µA 26 GHz 10 2 10.0 10.0 0.2 5.0 3.0 1.0 0.5 0.2 5.0 10.0 3.0 2.0 1.0 2 0.5 28 26 20 µA 50 µA 3.0 0.2 24 Figure 3. Typical noise figure vs. frequency. Figure 2. Typical forward characteristics for low barrier beam lead diodes. HSCH-5330, -5340 series. 18 10.0 0.2 5.0 5.0 3.0 3.0 0.5 0.5 2.0 2.0 1.0 Figure 4. Typical admittance characteristics with 1 mA self bias. HSCH-5340. 4 20 1.0 0.5 10 12 9.375 FREQUENCY (GHz) 1.0 0.2 8 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) 10.0 0.2 0.1 pF 0.1 0.01 0 7.0 10 2.0 0.01 7.5 +125°C +25°C –55°C NOISE FIGURE (dB) +125°C +25°C –55°C FORWARD CURRENT (mA) FORWARD CURRENT (mA) 100 1.0 Figure 5. Typical admittance characteristics with external bias. HSCH-5340. 1.0 0.2 1 mA 1.5 mA 3 mA 18 GHz 1.0 20 µA 50 µA 0.5 2.0 2.0 150 µA 18 GHz 3.0 3.0 10 5.0 10 0.2 5.0 10.0 10.0 5.0 3.0 2.0 1.0 0.2 5.0 10.0 0.2 0.5 2 10.0 3.0 2.0 1.0 0.5 0.2 2 10.0 0.2 5.0 5.0 3.0 0.5 10.0 0.5 3.0 0.5 2.0 2.0 1.0 1.0 Figure 6. Typical admittance characteristics with self bias. HSCH-5314. Figure 7. Typical admittance characteristics with external bias. HSCH-5314. Models for Each Beam Lead Schottky Diode HSCH-5340 1 mA Self Bias 0.03 pF 0.1 nH 0.04 nH 11 Ω 267 Ω 0.11 pF Other HSCH-53xx Self Bias 0.02 pF 0.1 nH Rs Rj Cj Part Numbers HSCH-5314 5 1.0 mA Self Bias RS (Ω) Rj (Ω) Cj (pF) 5.0 393 0.11 1.5 mA Self Bias RS (Ω) Rj (Ω) Cj (pF) 5.2 232 0.11 3.0 mA Self Bias RS (Ω) Rj (Ω) Cj (pF) 5.0 150 0.12 HSCH-5340 External Bias 0.03 pF 0.1 nH Rj 0.04 nH 11 Ω Cj 0.11 pF 20 µA DC Bias Rj (Ω) Cj (pF) 1300 0.09 Part Numbers HSCH-5340 50 µA DC Bias Rj (Ω) Cj (pF) 560 0.09 150 µA DC Bias Rj (Ω) Cj (pF) 187 0.10 Other HSCH-53xx External Bias 0.02 pF 0.1 nH Rs Rj Cj Part Numbers HSCH-5314 20 µADC Bias RS (Ω) Rj (Ω) Cj (pF) 2.8 1300 0.11 For product information and a complete list of distributors, please go to our website: 50 µADC Bias RS (Ω) Rj (Ω) Cj (pF) 4.7 520 0.12 www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes AV01-0127EN AV01-0484EN September 21, 2006 150 µADC Bias RS (Ω) Rj (Ω) Cj (pF) 2.7 180 0.13