MGA-17516-TR1G

MGA-17516 Low Noise, High Linearity Match Pair Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-17516 is an economical, easy-to-use GaAs MMIC match pair Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 4.0 x 4.0 x 0.85mm3 16-pin QuadFlat-Non-Lead (QFN) package. The compact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-17516 an ideal choice as a low noise amplifier for cellular infrastructure for GSM, CDMA and TDS-CDMA applications. This device is applicable to both Single and Balance mode. It is designed for optimum use from 1.7GHz to 2.7GHz. For optimum performance at lower frequency from 500MHz to 1.7GHz, the MGA-16516 is recommended. Both MGA-17516 and MGA-16516 share the same package and pinout. x 4.0 x 4.0 x 0.85 mm3 16-lead QFN TOP VIEW BOTTOM VIEW Note: Package marking provides orientation and identification “17516” = Device Code “YYWW“ = Year and Work Week “XXXX” = Last 4 digit of Device Lot Number x GaAs E-pHEMT Technology[1] x Low cost small package size: 4.0x4.0x0.85 mm3 x Excellent uniformity in product specifications x Tape-and-Reel packaging option available Specifications 1.85GHz; 5V, 50mA (typ) per section x 17.4 dB Gain x 0.46 dB Noise Figure x 16.2 dBm Input IP3 Applications Pin 13 Pin 14 Pin 16 Pin 16 GND Pin 8 Pin 7 Pin 6 Pin 5 Pin 12 Pin 11 Pin 10 Pin 9 x High linearity performance x 21 dBm Output Power at 1dB gain compression Pin Configuration and Package Marking 17516 YYWW XXXX x Low noise figure x Low noise amplifier for cellular infrastructure for GSM, CDMA and TDS-CDMA. Pin 1 Pin 2 Pin 3 Pin 4 x Other ultra low noise application. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40 V ESD Human Body Model = 350 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. [4] [3] [2] [1] Pin Configuration [16] [15] [14] [13] [9] [10] [11] [12] [5] [6] [7] [8] Pin Use 1 Not Used 2 Not Used 3 Not Used 4 Not Used 5 RFin1 6 Not Used 7 Not Used 8 RFin2 9 Not Used 10 Not Used 11 Not Used 12 Not Used 13 RFout2 14 Not Used 15 Not Used 16 RFout1 Simplified Schematic Vgg1 Ca7 Vdd1 Ra1 Ca5 Ca11 Ra4 [1] [2] [3] Cb7 Rb1 Vgg2 C2 RFout a C4 RFout b L4 L3 Cb5 Ca9 [12] C3 [16] [15] [14] [13] [11] RFin b [5] [6] [7] [8] [9] C1 L2 [10] RFin a [4] L1 Rb4 Cb9 Vdd2 Cb11 Note: x Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2 Absolute Maximum Rating [2] TA = 25°C Symbol Parameter Units Absolute Max. Thermal Resistance [3] Vdd Device Voltage, RF output to ground V 5.5 Vgg Gate Voltage V 1 (Vdd = 5.0V, Idd = 50mA per channel), Tjc = 49.4°C/W per channel Pin CW RF Input Power (Vdd = 5.0, Idd = 50mA) dBm 15 Idd Device Current, RFout to ground per channel mA 100 Pdiss Total Power Dissipation [4] W 1 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Notes: 2. Operation of this device in excess of any of these limits may cause permanent damage. 3. Thermal resistance measured using Infra-Red Measurement Technique with both channels turned on hence Idd_total=100mA. 4. Power dissipation with both channels turned on. Board temperature TB is 25°C. Derate at 20mW/°C for TB>100°C. Electrical Specifications [7-10] RF performance at TA = 25°C, Vdd =5V, Idd = 50mA, 1.85 GHz and 1.95 GHz given for each RF channel, measured on demo board in Figure 5 with component list in Table1 for 1.85GHz matching. Symbol Parameter and Test Condition Vgg Operational Gate Voltage, Idd=50mA Gain Gain IIP3 [8] Input Third Order Intercept Point NF [9] Noise Figure OP1dB Output Power at 1dB Gain Compression IRL Input Return Loss, 50Ω source ORL Output Return Loss, 50Ω load REV ISOL Reverse Isolation ISOL1-2 Isolation between RFin1 and RFin2 Frequency (GHz) Units Min. Typ. Max. V 0.40 0.53 0.65 1.85 dB 1.95 dB 17.4 15.5 16.8 13.5 17 1.85 dBm 1.95 dBm 1.85 dB 0.46 1.95 dB 0.50 1.85 dBm 21 1.95 dBm 21 1.85 dB 6 1.95 dB 6.3 1.85 dB 15 1.95 dB 15 1.85 dB 26 1.95 dB 26 18.5 16.2 1.85 dB 38 1.95 dB 38 0.75 Notes: 7. Measurements at 1.85 GHz obtained using demo board described in Figure 1. 8. IIP3 test condition: a. FRF1 = 1.85 GHz, FRF2 = 1.851 GHz with input power of -15dBm per tone. b. FRF1 = 1.95 GHz, FRF2 = 1.951GHz with input power of -15dBm per tone. 9. For NF data, board losses of the input have not been de-embedded. 10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 3 Product Consistency Distribution Charts Mean : 0.53 Min : 0.40 Max : 0.65 Figure 1. Vgg @ 1.95GHz, 5V, 50mA Mean = 0.53 Mean : 0.50 Max : 0.75 Figure 2. Noise Figure @ 1.95GHz, 5V, 50mA Mean = 0.50 Mean : 17.0 Min : 13.5 Figure 3. IIP3 @ 1.95GHz, 5V, 50mA Mean = 17.0 Mean : 16.8 Min : 15.5 Max : 18.5 Figure 4. Gain @ 1.95GHz, 5V, 50mA Mean = 16.8 Notes: 1. Distribution data samples size is 500 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. Circuit losses have not been de-embedded from actual measurement. 4 Demo Board Layout – Recommended PCB material is 10 mils Rogers RO4350. – Suggested component values may vary according to layout and PCB material. Figure 5. Demo Board Layout Diagram Demo Board Schematic Vgg1 Table 1. Component list for 1.85GHz matching. Vdd1 Ca11 Ca7 Ra1 Ra4 Ca5 C1 RFin a C3 L2 C2 [5] [16] [6] [15] [7] [14] [8] [13] C4 [9] [10] [11] [12] RFin b Ca9 [4] [3] [2] [1] L1 L3 Cb5 L4 Rb1 Rb4 Cb11 Cb7 Vgg2 Vdd2 Figure 6. Demo Board Schematic Diagram 5 Cb9 RFout a RFout b Part Size Value Part Number C1, C2 0402 1000pF (Murata) GRM155R71H102KA01 C3, C4 0402 1000pF (Murata) GRM155R71H102KA01 Ca7, Ca11 0805 4.7uF (Murata) GRM21BR60J475KA11L Cb7, Cb11 0805 4.7uF (Murata) GRM21BR60J475KA11L Ca5, Ca9 0402 9pF (Murata) GJM1555C1H9R0CB01 Cb5, Cb9 0402 9pF (Murata) GJM1555C1H9R0CB01 Ra1, Rb1 0402 4.3: (Rohm) MCR01MZSJ4R3 Ra4, Rb4 0402 9.1: (Rohm) MCRO1MZSJ9R1 L1, L3 0402 9nH (Coilcraft) 0402CS-9N0XJLU L2, L4 0402 8.2nH (Toko) LLP1005-FH8N2C MGA-17516 Typical Performance 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Fmin (dB) Fmin (dB) RF performance for each RF channel at TA = 25°C, Vdd = 5V, Idd = 50mA unless otherwise stated. OIP3 is measured with input power of -15dBm per tone. 40 50 Idd (mA) 60 20 18 16 14 12 10 8 6 4 2 0 50 Idd (mA) 60 14 12 10 8 6 4 2 50 Idd (mA) 0 60 40 40 35 35 30 30 25 25 20 15 20 15 10 10 5 5 40 50 Idd (mA) 60 Figure 11. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz 40 Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz OIP3 (dBm) OIP3 (dBm) 60 16 Figure 9. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz 6 50 Idd (mA) 18 40 0 40 Figure 8. Fmin vs Idd at 5V at 2GHz Gain (dB) Gain (dB) Figure 7. Fmin vs Idd at 5V at 1.85GHz 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 50 Idd (mA) 60 Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz MGA-17516 Typical Performance 24 22 20 18 16 14 12 10 8 6 4 2 0 OP1dB (dBm) OP1dB (dBm) RF performance for each RF channel at TA = 25°C, Vdd =5V, Idd = 50mA unless otherwise stated. OIP3 is measured with input power of -15dBm per tone. 40 50 Idd (mA) 60 1.6 100 1.4 90 1.2 80 1 70 0.8 0.6 Idd=40mA Idd=50mA Idd=60mA 0.2 0 1.7 1.85 2 2.4 Frequency (GHz) 2.6 Vgg=0.52 Vgg=0.54 Vgg=0.56 Vgg=0.58 Vgg=0.60 Vgg=0.62 Vgg=0.64 60 50 20 1 1.5 2 2.5 3 Vdd (V) 3.5 4 4.5 5 Figure 16. I-V curve 1.60 1.40 1.20 Fmin (dB) Gain (dB) 60 30 3.5 Figure 15. Fmin vs Frequency and Idd at 5V 1.00 0.80 0.60 -40°C 25°C 85°C 0.40 1.7 1.85 1.9 -40 °C 25 °C 85 °C 0.20 0.00 2 2.4 2.5 2.6 3.5 Frequency (GHz) Figure 17. Gain vs Frequency and Temperature tuned for Optimum OIP3 and Fmin at 5V 50mA 7 50 Idd (mA) 40 0.4 20 18 16 14 12 10 8 6 4 2 0 40 Figure 14. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 2GHz Idd (mA) Fmin (dB) Figure 13. OP1dB vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 1.85GHz 24 22 20 18 16 14 12 10 8 6 4 2 0 1.7 1.85 2 2.4 Frequency (GHz) 2.6 3.5 Figure 18. Fmin vs Frequency and Temperature tuned for Optimum OIP3 and Fmin at 5V 50mA MGA-17516 Typical Performance 45 24 22 20 18 16 14 12 10 8 6 4 2 0 40 35 OIP3 (dBm) OP1dB (dBm) RF performance for each RF channel at TA = 25°C, Vdd = 5V, Idd = 50mA unless otherwise stated. OIP3 is measured with input power of -15dBm per tone. 30 25 20 15 -40°C 25°C 85°C 1.7 1.85 1.9 2 2.4 2.5 Frequency (GHz) 2.6 3.5 Figure 19. OP1dB vs Frequency and Temperature for Optimum OIP3 and Fmin at 5V 50mA 10 -40°C 25°C 85°C 5 0 1.7 1.85 1.9 2 2.4 2.5 Frequency (GHz) 2.6 3.5 Figure 20. OIP3 vs Frequency and Temperature for Optimum OIP3 and Fmin at 5V 50mA Below is the table showing the MGA-17516 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd=5V, Idd=50mA. Gamma Load position Frequency(GHz) Magnitude Angle MAX OIP3 (dBm) P1dB (dBm) 1.70 0.402 3.5 36.6 19.7 1.85 0.104 40.1 35.1 21.6 1.90 0.512 -9.4 37.6 18.5 2.00 0.153 44.0 34.9 20.5 2.40 0.369 3.5 38.5 20.1 2.50 0.170 143.3 34.7 20.5 2.60 0.566 40.0 37.5 20.0 3.50 0.352 178.8 35.3 21.4 8 [1] [2] [14] [8] [13] [12] [15] [7] [11] [16] [10] [5] [6] [9] Figure 21. [3] RFout reference plane [4] RFin reference plane Notes: 1. The Maximum OIP3 values are calculated based on Load pull measurements on approximately 100 different impedances using Maury’s Load pull test system. 2. Measurements are conducted on 0.010 inch thick ROGER 4350. The input reference plane is at the end of the RFin pin and the output reference plane is at the end of the RFout pin as shown in Figure 21. 3. Gamma Load for maximum OIP3 with biasing 3V50mA, 3.5V 50mA, 4V 50mA, 4.5V 50mA, 5V 40mA, 5V 50mA and 5V 60mA from 500 MHz to 3.5 GHz are available upon request. MGA-17516 Typical Performance 20 18 16 14 12 10 8 6 4 2 0 20 Reverse Isolation (dB) Gain (dB) RF performance at TA = 25°C, Vdd = 5V, Idd = 50mA, given for each RF channel, measured on demo board in Figure 5 with component list in Table1 for 1.85GHz matching. OIP3 is measured with input power of -15dBm per tone. 7 16 6 14 Output Return Loss (dB) Input Return Loss (dB) 18 5 4 3 2 0 Channel A Channel B 1.6 1.7 1.8 1.9 2 1.6 1.7 1.8 1.9 12 10 8 6 4 0 Channel A Channel B 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Figure 25. Output Return Loss vs Frequency and channel 24 20 20 16 16 IIP3 (dBm) 24 12 12 8 8 Channel A Channel B 4 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Figure 24. Input Return Loss vs Frequency and channel OP1dB (dBm) Channel A Channel B Figure 23. Reverse Isolation vs Frequency and channel 8 1 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Figure 26. OP1dB vs Frequency and channel 9 8 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Figure 22. Gain vs Frequency and channel 12 4 Channel A Channel B 1.6 1.7 1.8 1.9 16 Channel A Channel B 4 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Figure 27. IIP3 vs Frequency and channel MGA-17516 Typical Performance RF performance at TA = 25°C, Vdd = 5V, Idd = 50mA, given for each RF channel, measured on demo board in Figure 5 with component list in Table1 for 1.85GHz matching. OIP3 is measured with input power of -15dBm per tone. 30 IRL ORL Gain REV ISOL 25 IRL, ORL, Gain and REV ISOL (dB) IRL, ORL, Gain and REV ISOL (dB) 30 20 15 10 5 0 1 2 3 4 Frequency (GHz) 5 15 10 5 Figure 29. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs Frequency for channel B 5 4 3 NF (dB) K-Factor 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) 6 Figure 28. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs Frequency for channel A 2 1 Channel A Channel B 0 2 4 6 8 10 12 14 Frequency (GHz) Figure 30. K-Factor vs Frequency and channel 10 25 0 0 0 IRL ORL Gain REV ISOL 16 18 20 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Channel A 0.1 Channel B 0 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 Frequency (GHz) Figure 31. NF vs Frequency and channel MGA-17516 Typical Scattering Parameters, Vdd = 5V, Idd = 50mA Freq GHz S11 S21 S12 S22 Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. 0.1 0.98 -13.0 27.46 23.61 165.1 0.005 86.7 0.39 -25.4 0.5 0.80 -61.6 25.03 17.84 130.3 0.024 58.9 0.26 -57.7 0.9 0.66 -94.7 22.46 13.28 106.8 0.034 47.8 0.19 -87.4 1.0 0.64 -99.7 21.88 12.41 102.5 0.036 45.5 0.18 -90.8 1.5 0.548 -127.9 19.20 9.12 82.6 0.045 38.2 0.13 -125.0 1.9 0.52 -145.4 17.41 7.42 69.6 0.052 33.5 0.12 -155.1 2.0 0.51 -149.2 17.01 7.08 66.6 0.054 31.6 0.12 -162.2 2.5 0.49 -166.2 15.16 5.73 52.7 0.062 25.3 0.14 166.1 3.0 0.48 179.6 13.51 4.74 39.7 0.070 18.6 0.17 144.0 4.0 0.48 157.6 10.90 3.51 16.4 0.085 5.3 0.24 115.5 5.0 0.48 138.2 8.78 2.75 -6.4 0.099 -10.4 0.30 87.1 6.0 0.47 119.7 6.85 2.20 -26.9 0.111 -24.9 0.40 71.2 7.0 0.46 93.9 5.05 1.79 -49.2 0.119 -42.0 0.51 50.6 8.0 0.49 71.3 3.14 1.44 -70.0 0.122 -58.5 0.62 33.4 9.0 0.53 58.2 1.36 1.17 -87.5 0.123 -72.2 0.66 19.2 10.0 0.55 52.8 -0.10 0.99 -102.4 0.127 -84.0 0.69 6.6 11.0 0.56 47.2 -1.41 0.85 -116.8 0.129 -95.3 0.71 -5.9 12.0 0.54 35.1 -2.64 0.74 -131.9 0.131 -107.7 0.76 -15.2 13.0 0.55 18.1 -4.09 0.63 -146.8 0.127 -120.3 0.81 -21.5 14.0 0.59 4.6 -5.34 0.54 -160.4 0.126 -132.0 0.83 -26.4 15.0 0.63 3.3 -6.26 0.49 -172.8 0.127 -142.7 0.82 -36.3 16.0 0.65 7.5 -6.83 0.46 174.6 0.133 -153.4 0.80 -51.0 17.0 0.63 11.0 -7.35 0.43 162.7 0.139 -164.2 0.80 -64.3 18.0 0.62 4.9 -7.88 0.40 151.5 0.145 -174.1 0.82 -66.9 19.0 0.61 -7.4 -8.37 0.38 139.9 0.150 174.7 0.83 -65.0 20.0 0.65 -20.8 -9.02 0.35 126.5 0.150 162.4 0.81 -66.9 11 [1] [2] [14] [8] [13] [12] [15] [7] [11] [16] [10] [5] [6] [9] Figure 32. [3] RFout reference plane [4] RFin reference plane Typical Noise Parameters, Vdd = 5V, Idd = 50mA Part Number Ordering Information Freq GHz Fmin *opt *opt dB Mag. Ang. 0.5 0.32 0.56 -18.64 0.7 0.32 0.48 -0.51 0.064 0.9 0.32 0.35 7.71 0.064 1.7 0.39 0.31 24.36 0.066 1.85 0.41 0.29 61.77 0.050 2.0 0.45 0.19 68.44 0.049 2.4 0.52 0.19 95.09 0.047 2.6 0.57 0.23 113.84 0.047 3.5 0.78 0.28 153089 0.037 Part Number No. of Devices Container Rn/50 MGA-17516-BLKG 100 Antistatic Bag 0.069 MGA-17516-TR1G 3000 Tape/reel Notes: 1. The Fmin values are based on noise figure measurements at 100 different impedances using Focus source pull test system. From these measurements a true Fmin is calculated. 2. Scattering and noise parameters are measured on 10 mils thick ROGER 4350 with total board thickness of 62 mils. The input reference plane is at the end of the RFin pin and the output reference plane is at the end of the RFout pin as shown in Figure 32. 3. S2P file with scattering and noise parameters for biasing 3V 50mA, 3.5V 50mA, 4V 50mA, 4.5V 50mA, 5V 40mA and 5V 60mA are available upon request. SLP4X4 Package Dimension Pin 1 Dot by marking 2.70 ± 0.05 Exp.DAP 0.203 Ref. 4.00 ± 0.10 PIN #1 IDENTIFICATION CHAMFER 0.30 x 45º 0.40 ± 0.05 4.00 ± 0.10 17516 YYWW XXXX 0.30 ± 0.05 2.70 ± 0.05 Exp.DAP 0.65 Bsc 0.00 - 0.05 1.95 Ref. 0.85 ± 0.10 TOP VIEW SIDE VIEW Notes: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold ash and metal burr. 12 BOTTOM VIEW PCB Land Pattern and Stencil Design 4.00 2.70 3.96 2.16 0.65 2.16 3.96 2.70 4.00 0.65 0.40 0.36 0.30 0.27 Stencil Opening Land Pattern 2.70 2.16 2.16 2.70 4.00 3.96 0.65 0.36 0.40 0.27 0.30 Combination of Land Pattern & Stencil Opening Notes: 1. All dimensions are in millimeters. 2. 4 mil stencil thickness recommended 13 Device Orientation REEL USER FEED DIRECTION 17516 YYWW XXXX CARRIER TAPE USER FEED DIRECTION 17516 YYWW XXXX 17516 YYWW XXXX TOP VIEW END VIEW COVER TAPE Tape Dimensions ∅ 1.50 + .10 8.0 ±0.10 2.00 ±0.05 1.75 ±0.10 4.0 ±0.10 + + + + 5.50 ±.05 12.00 +0.30/-0.10 ∅ 1.50 +0.25 .279 ±0.02 10º MAX. 10º MAX. 1.13 ±0.10 4.25 ±0.10 Ao 14 Ko 4.25 ±0.10 Bo Reel Dimension - 7 Inch A B ØE ØD SIDE VIEW BACK VIEW F SPECIFICATION TAPE WIDTH A MAX B +1.5–0.0 C1 ±0.5 ØD ±0.5 ØE (max) F (min) ØG ±0.2 ØH (min) 12mm 18.00 12.4 4.40 55.0 178 1.50 13.50 20.20 G FRONT VIEW C1 TAPE SLOT PLANE VIEW 15 Note: Surface resistivity to be