MGA-635T6
GPS Low Noise Amplifier with Variable Bias
Current and Shutdown Function
Data Sheet
Description
Features
Avago Technologies’ MGA-635T6 is a LNA designed
for GPS/ISM/Wimax applications in the (0.9-2.4)GHz
frequency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process to
achieve high gain operation with very low noise figures
and high linearity. Noise figure distribution is very tightly
controlled. Gain and supply current are guaranteed parameters. A CMOS compatible shutdown pin is included
to turn the LNA off and provide a variable bias.
Low Noise Figure : 0.74dB
The MGA-635T6 LNA is useable down to 1V operation.
It achieves low noise figures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
CMOS compatible shutdown pin (VSD) current @
2.85V : 60uA
High Gain : 14.5dB
High linearity and P1dB
GaAs E-pHEMT Technology
Low component count
Wide Supply Voltage : 1V to 3.6V
Shutdown current : < 0.1uA
Adjustable bias current via one single external resistor/voltage
Component Image
Shutdown function
Surface Mount 2.0x1.3x0.4 mm3 6-lead UTSLP
Small Footprint: 2 x 1.3mm2
Low Profile : 0.4 mm
.
Ext matching for non-GPS freq band operation
3FYM
Specifications
Top View
Bottom View
Note:
Package marking provides orientation and identification
“3F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
At 1.575GHz, 2.85V 6.3mA (Typ)
Gain = 14.5 dB (Typ)
NF = 0.74 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 2.5 dBm (Typ)
S11 = -8 dB (Typ)
S22 = -10.4 dB (Typ)
At 1.575GHz, 2.85V 8mA (Typ)
Gain = 15.7 dB (Typ)
NF = 0.8 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 1 dBm (Typ)
S11 = -11.8 dB (Typ)
S22 = -9.3 dB (Typ)
Applications
GPS, ISM & WiMax Bands LNA
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 250 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating [1] TA=25C
Thermal Resistance [3] (Vdd = 2.85V, Ids = 4.9mA), jc = 73 C/W
Symbol
Parameter
Units
Absolute Max.
Vdd
Device Drain to Source Voltage [2]
V
3.6
Ids
Drain Current [2]
mA
15
Pin,max
CW RF Input Power (Vdd = 2.85V, Ids=4.9mA)
dBm
+10
Pdiss
Total Power Dissipation [4]
mW
54
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Assuming DC quiescent conditions
3. Thermal resistance measured using Infra-Red measurement technique.
4. Board (module belly) temperature TB is 25 C. Derate 14mW/ C for TB>146 C.
2
Electrical Specifications
TA = 25 °C, DC bias for RF parameters is Vdd = Vsd = +2.85V , measured on demo board (see Fig. 4) unless otherwise
specified.
VDD= VSD = +2.85V, R1 = 22K Ohm, Freq=1.575GHz – Typical Performance[7]
Table 1. Performance table at nominal operating conditions
Symbol
Parameter and Test Condition
Units
Min.
Typ
Max.
G
Gain
dB
12.5
14.5
16.3
NF
Noise Figure
dB
-
0.74
1.3
IP1dB
Input 1dB Compressed Power
dBm
2.5
IIP3[8]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm
3.5
S11
Input Return Loss
dB
-8
S22
Output Return Loss
dB
- 10.4
Ids
Supply Current
mA
6.3
Ish
Shutdown Current @ VSD = 0V
uA
0.1
Vds
Supply Voltage
V
2.85
IP1dB1710M
Out of Band IP1dB (DCS 1710MHz) blocking
dBm
4
IIP3OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
6.5
10
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Table 2. Typical performance at low operation voltages with R1 (see Fig 4) set to 0 Ohm
Symbol
Parameter and Test Condition
Units
Vdd=2V
Vdd=1.5V
Vdd=1V
G
Gain
dB
16.2
15.5
13.8
NF
Noise Figure
dB
0.7
0.8
0.9
IP1dB
Input 1dB Compressed Power
dBm
-1.8
-3.5
-5.2
IIP3[8]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm
7.5
5.3
3.6
S11
Input Return Loss
dB
-10.4
-9
-7.5
S22
Output Return Loss
dB
-14
-13
-11
Ids
Supply Current
mA
15
10
4.5
Ish
Shutdown Current @ VSD = 0V
uA
0.1
0.1
0.1
Vds
Supply Voltage
V
2
1.5
1.0
IP1dB1710M
Out of Band IP1dB (DCS 1710MHz) blocking
dBm
-0.5
-2.2
-4
IIP3OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
dBm
10.5
8.3
7
Notes:
7. Measurements at 1.575GHz obtained using demo board described in Fig 4.
8. 1.575GHz IIP3 test condition: FRF1 = 1575 MHz, FRF2 = 1577.5 GHz with input power of -20dBm per tone measured at lower side band
3
Circuit
Symbol
Size
Desciption
L1
0402
5.6 nH Inductor
L2
0402
12 nH Inductor
L3
0402
6.8 nH Inductor
L4
0402
33 nH Inductor
C1, C2
0402
6.8 pF Capacitor
C3
0603
0.1 uF Capacitor
R1
0402
22K Ohm Resistor
R2
0402
12 Ohm Resistor
Figure 1. Demoboard and application circuit components table
4
Vdd = +2.85V
C
C3
C=0.1 uF
C
C2
C=6.8 pF
Vs d = +2.85V
P RL
P RL1
R2 =12 Ohm
L4 =33 nH
Toko 0402
C
C1
C=6.8 pF
R
R1
R=22 kOhm
4
L
L3
L=6.8 nH
R=
Toko 0402
6
BIAS
RF_IN
5
RF_OUT
2
L
L1
L=5.6 nH
Toko 0402
C
C
Amplifie r2
AMP 1
L
L2
L=12 nH
Toko 0402
GND
Figure 2. Demoboard schematic diagram
Notes
1. L1 and L2 form the input matching network. The LNA module has a built-in coupling and DC-block capacitor at the input and output. Best noise
performance is obtained using high-Q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard 0402
chip inductors. Replacing L1, L2 and L3 with high-Q wirewound inductors (eg. Cilcraft 0402CS series) will yield 0.1dB lower NF and 0.2dB higher
Gain.
2. L3 is an output matching inductor.
3. C1 is a RF bypass capacitor.
4. PRL1 is a network that isolates the measurement demoboard from external disturbances. C2 and C3 mitigates the effect of external noise pickup
on the VSD and VDD lines. These components are not required in actual operation.
5. Bias control is achieved by either varying the VSD voltage without R1 or fixing the VSD voltage to VDD and varying R1. Typical value for R1 is
22k Ohm for 5mA total current at VDD=+2.85V.
5
MGA-635T6 Typical Performance Curves, Vdd=Vsd=+2.85V, R1=22KOhm measured on demoboard (see Fig.4) at
1.575GHz (At 25°C unless specified otherwise)
1.2
16
15
1.1
14
1
NF (dB)
Gain (dB)
13
12
11
0.9
0.8
0.7
10
9
1.575 GHz
8
2 GHz
7
2.45 GHz
1.575 GHz
0.6
2 GHz
0.5
2.45 GHz
0.4
6
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
2.8
3.4
Figure 4. NF vs Vdd vs Freq
6
7
5
6
5
4
IP1dB (dBm)
IIP3 (dBm)
Figure 3. Gain vs Vdd vs Freq
3
2
1.575 GHz
1
2 GHz
4
3
2
1.575 GHz
2 GHz
2.45 GHz
1
2.45 GHz
0
0
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
Vdd (V)
Figure 6. IP1dB vs Vdd vs Freq
8
7
6
5
4
3
1.575 GHz
2
2 GHz
1
2.45 GHz
0
2.4
2.6
2.8
3
Vdd (V)
Figure 7. Ids vs Vdd vs Freq
2.8
3
Vdd (V)
Figure 5. IIP3 vs Vdd vs Freq
Ids (mA)
3.2
Vdd (V)
Vdd (V)
6
3
3.2
3.4
3.2
3.4
MGA-635T6 Typical Performance Curves, Vdd=Vsd=+2.85V, R1=22KOhm measured on demoboard (see Fig.4)
(At 25°C unless specified otherwise)
1.4
18
1.2
16
1
NF (dB)
Gain (dB)
14
12
25 deg
10
0.8
0.6
0.4
25 deg
-40 deg
85 deg
-40 deg
8
0.2
85 deg
0
6
2.4
2.6
2.8
3
3.2
2.4
3.4
2.6
2.8
3
3.2
3.4
Vdd (V)
Vdd (V)
Figure 8. Gain vs Vdd vs Temp
Figure 9. NF vs Vdd vs Temp
5
4
4.5
3.5
4
IP1dB (dBm)
IIP3 (dBm)
3.5
3
2.5
2
25 deg
1.5
2.5
2
1.5
-40 deg
1
3
85 deg
25 deg
-40 deg
85 deg
1
0.5
0
0.5
2.4
2.6
2.8
3
3.2
3.4
2.4
2.6
2.8
Vdd (V)
Figure 10. IIP3 vs Vdd vs Temp
Figure 11. IP1dB vs Vdd vs Temp
8
7
Ids (mA)
6
5
4
3
25 deg
2
-40 deg
1
85 deg
0
2.4
2.6
2.8
3
Vdd (V)
Figure 12. Ids vs Vdd vs Temp
7
3
Vdd (V)
3.2
3.4
3.2
3.4
Package Dimensions
PIN #1 DOT BY MARKING
PIN #1 INDICATOR
R 0.10
0.40 ± 0.05
0.20
0.15
2.00 ± 0.05
1.10
1.30 ± 0.05
3FYM
0.50
1.20
0.20
TOP VIEW
SIDE VIEW
BOTTOM VIEW
PCB Land Pattern
1.700
1.100
0.435
0.286
0.300
R0.100
0.350
1.300
0.350
Top Metal
Solder Mask Opening
0.230
0.332
0.310
Land Pattern With Via
1.960
1.700
0.435
1.700
0.435
0.260
0.500
0.510
0.260
0.500
0.230
0.310
Stencil Opening
Notes:
1. All dimension are in MM
2. Via hole is optional.
3. Recommend to use standard 4 mils Stencil thickness
8
0.230
Combined Land Pattern & Stencil Opening
0.260
0.286
Stencil Outline Drawing and Combined Land Pattern & Stencil Layout
Device Orientation
REEL
USER FEED DIRECTION
3FYM
CARRIER
TAPE
USER
FEED
DIRECTION
3FYM
3FYM
TOP VIEW
END VIEW
COVER TAPE
Tape Dimensions
∅ 1.50 ± 0.10
4.0 ± 0.10
2.00 ± 0.05
4.0 ± 0.10
1.75 ± 0.10
3.50 ± 0.05
8.00
+0.30/-0.10
0.20
0.20 ± 0.15
45° MAX.
45° MAX.
0.73 ± 0.05
2.17 ± 0.05
Ao
Ko
Part Number Ordering Information
9
Part Number
No. of Devices
Container
MGA-635T6-BLKG
100
Antistatic bag
MGA-635T6-TR1G
3000
7” Reel
MGA-635T6-TR2G
10000
13” Reel
1.67 ± 0.05
Bo
Reel Dimensions
Ø178.0±1.0
FRONT
BACK
SEE DETAIL “X”
RECYCLE LOGO
FRONT VIEW
7.9-10.9**
65°
45°
8.4
+1.5*
-0.0
R10.65
R5.2
Ø55.0±0.5
BACK
60°
Ø178.0±1.0
FRONT
Slot hole 'b'
Slot hole 'a'
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
Ø51.2±0.3
BACK VIEW
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0188EN
AV02-0215EN - March 2, 2012
14.4*
MAX.
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