MGA-82563-TR1

MGA-82563 0.1– 6 GHz 3 V, 17 dBm Amplifier Data Sheet Description Features Avago’s MGA-82563 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from 0.1 to 6 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package. x Lead-free Option Available The input and output of the amplifier are matched to 50: (below 2:1 VSWR) across the entire bandwidth, eliminating the expense of external matching. The amplifier allows a wide dynamic range by offering a 2.2 dB NF coupled with a +31 dBm Output IP3. x 2.2 dB Noise Figure at 2.0 GHz The circuit uses state-of-the-art PHEMT technology with proven reliability. On-chip bias circuitry allows operation from a single +3 V power supply, while resistive feedback ensures stability (K>1) over all frequencies and temperatures. Applications Surface Mount Package Simplified Schematic x +17.3 dBm P1 dB at 2.0 GHz +20 dBm Psat at 2.0 GHz x Single +3V Supply x 13.2 dB Gain at 2.0 GHz x Ultra-miniature Package x Unconditionally Stable x Buffer or Driver Amp for PCS, PHS, ISM, SATCOM and WLL Applications x High Dynamic Range LNA SOT-363 (SC-70) OUTPUT and Vd 6 INPUT 3 Pin Connections and Package Marking BIAS BIAS GND 2 INPUT 3 Note: 82x GND 1 6 OUTPUT and Vd 5 GND GND 1, 2, 4, 5 4 GND Package marking provides orientation and identification. "82" = Device Code "x" = Date code character identifies month of manufacture Attention: Observe precautions for handling electrostatic sensitive devices. ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. MGA-82563 Absolute Maximum Ratings Thermal Resistance [2]: Tch-c = 180°C/W Units Absolute Maximum[1] Vd Device Voltage, RF Output to Ground V 5.0 Vgd Device Voltage, Gate to Drain V -6.0 1. Permanent damage may occur if any of these limits are exceeded. Vin Range of RF Input Voltage to Ground V +0.5 to -1.0 2. TC = 25°C (TC is defined to be the temperature at the top of the package.) Symbol Parameter Notes: Pin CW RF Input Power dBm +13 T ch Channel Temperature °C 165 TSTG Storage Temperature °C -65 to 150 MGA-82563 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 3 V Symbol G test Parameters and Test Conditions Gain in test circuit[1] Units f = 2.0 GHz NFtest Noise Figure in test circuit [1] f = 2.0 GHz NF50 Noise Figure in 50 Ω system f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 6.0 GHz dB f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 6.0 GHz dB f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 6.0 GHz dBm f = 2.0 GHz dBm |S21|2 P1 dB IP3 Gain in 50 Ω system Output Power at 1 dB Gain Compression Output Third Order Intercept Point Min. Typ. Max. Std Dev [2] 12.0 13.2 15 0.35 2.2 2.9 0.20 2.3 2.2 2.2 2.2 2.4 2.7 14.7 14.5 13.5 12.1 10.7 8.8 0.35 17.4 17.5 17.3 17.1 17.0 16.8 0.54 +31 VSWRin Input VSWR f = 0.2–5.0 GHz 1.8:1 VSWRout Output VSWR f = 0.2–5.0 GHz 1.2:1 Id Device Current mA 0.20 63 84 1.0 101 Notes: 1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section. 2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification. 2 MGA-82563 Typical Performance, TC = 25° C, Vd = 3 V 16 5 19 4 18 3 17 NOISE FIGURE (dB) 12 GAIN (dB) 10 8 6 4 2 TA = +85C TA = +25C TA = –40C 2 P1 dB (dBm) 14 TA = +85C TA = +25C TA = –40C 1 0 1 2 3 4 5 6 TA = +85C TA = +25C TA = –40C 15 0 0 16 14 0 1 2 FREQUENCY (GHz) 3 4 5 6 0 1 2 Figure 1. 50 Power Gain vs. Frequency and Temperature. Figure 2. Noise Figure (into 50 ) vs. Frequency and Temperature. 16 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Figure 3. Output Power @ 1 dB Gain Compression vs. Frequency and Temperature. 5 19 4 18 3 17 NOISE FIGURE (dB) 10 8 6 2 Vd = 3.3V Vd = 3.0V Vd = 2.7V 4 2 Vd = 3.3V Vd = 3.0V Vd = 2.7V 1 0 1 2 3 4 5 6 0 1 2 FREQUENCY (GHz) 4 5 6 3.5 1 DEVICE CURRENT (mA) 2.5 Input 2 16 100 14 70 60 TA = +85C TA = +25C TA = -40C 40 Output 2 3 4 5 FREQUENCY (GHz) Figure 7. Input and Output VSWR into 50 vs. Frequency. 6 6 10 8 6 NF 2 10 1 5 4 20 0 4 Gain 12 80 50 3 Figure 6. Output Power @ 1 dB Gain Compression vs. Frequency and Voltage. 110 30 1.5 2 FREQUENCY (GHz) 90 3 3 0 Figure 5. Noise Figure (into 50 ) vs. Frequency and Voltage. 4 VSWR (n:1) 3 FREQUENCY (GHz) Figure 4. 50 Power Gain vs. Frequency and Voltage. 1 Vd = 3.3V Vd = 3.0V Vd = 2.7V 14 0 0 16 15 GAIN and NF (dB) GAIN (dB) 12 P1 dB (dBm) 14 0 0 1 2 3 DEVICE VOLTAGE (V) Figure 8. Device Current vs. Voltage and Temperature. 4 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 9. Minimum Noise Figure and Associated Gain vs. Frequency. MGA-82563 Typical Scattering Parameters[1], TC = 25°C, Z O = 50 Ω, Vd = 3 V Freq. S11 S S K Mag Ang dB Mag Ang dB Mag Ang Mag Ang Factor 0.1 0.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.48 0.35 0.29 0.29 0.29 0.29 0.29 0.28 0.28 0.29 0.30 0.32 0.34 0.36 0.38 0.40 -39 -35 -37 -57 -78 -99 -118 -138 -158 -177 166 151 136 123 110 97 15.71 14.81 14.34 13.95 13.50 12.99 12.45 11.84 11.24 10.67 10.11 9.58 9.07 8.57 8.06 7.51 6.10 5.50 5.21 4.98 4.73 4.46 4.19 3.91 3.65 3.42 3.20 3.01 2.84 2.68 2.53 2.37 164 165 159 144 128 114 99 86 74 61 50 38 27 16 5 -5 -23 -22 -22 -22 -22 -22 -21 -21 -21 -20 -20 -19 -19 -19 -19 -18 0.070 0.076 0.079 0.080 0.082 0.085 0.089 0.093 0.098 0.103 0.107 0.112 0.117 0.121 0.125 0.126 27 14 6 3 2 1 -1 -3 -6 -9 -13 -18 -23 -29 -35 -41 0.16 0.12 0.11 0.11 0.10 0.10 0.10 0.11 0.12 0.13 0.15 0.16 0.18 0.19 0.22 0.24 -99 -134 177 156 142 131 124 118 111 106 100 94 87 82 74 66 1.02 1.20 1.29 1.33 1.37 1.41 1.44 1.48 1.51 1.52 1.53 1.54 1.55 1.54 1.55 1.59 MGA-82563 Typical Noise Parameters[1] TC = 25°C, Z O = 50 Ω, Vd = 3 V *opt Frequency GHz NFO dB Mag. Ang. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2.10 2.10 2.10 2.12 2.12 2.15 2.16 2.16 2.19 2.18 2.19 2.23 2.28 2.39 0.15 0.15 0.14 0.15 0.15 0.144 0.14 0.15 0.17 0.20 0.22 0.25 0.27 0.29 25 45 65 75 94 113 134 155 177 -166 -152 -138 -125 -111 Note: 1. Reference plane per Figure 11 in Applications Information section. 4 S GHz Rn / 50 Ω — 1.20 0.60 0.29 0.27 0.25 0.23 0.21 0.19 0.18 0.18 0.18 0.19 0.23 0.28 MGA-82563 Applications Information Introduction This medium power GaAs MMIC amplifier was developed for commercial wireless applications from 100 MHz to 6 GHz. The MGA-82563 runs on only 3 volts and typically requires only 84 mA to deliver over 17 dBm of output power at 1 dB gain compression. The 17.3 dBm output power (P1 dB) makes the MGA82563 extremely useful for pre-driver and driver stages in transmit cascades or for final output stages in lower power systems. For transmitter gain stage applications that require even higher output power, the MGA-82563 can provide 100 mW (20 dBm) of saturated output power with a power added efficiency approaching 50%. The low cost of the MGA-82563 makes it feasible to power combine two (or more) devices for even higher output power amplifiers. The MGA-82563 offers an excellent combination of high linearity (+31 dBm output IP3) and very low noise figure (2.2 dB) for applications requiring a very high dynamic range. The MGA-82563 uses resistive feedback to simultaneously achieve flat gain over a wide bandwidth and to match the input and output impedances to 50Ω. The MGA-82563 is also unconditionally stable (K>1) over its entire frequency range, making it both very easy to use and yielding consistent performance in the manufacture of high volume wireless products. An innovative internal bias circuit regulates the device’s internal current to enable the MGA-82563 to operate over a wide temperature range with a single, positive power supply of 3 volts. The MGA-82563 will operate with reduced power and gain with a bias supply as low as 1.5 volts. Test Circuit The circuit shown in Figure 10 is used for 100% RF testing of Gain and Noise Figure. The test circuit is merely a 50Ω input/output PC board with a RFC at the output to apply DC bias to the device under test. Tests in this circuit are used to guarantee the NFtest and Gtest parameters shown in the table of Electrical Specifications. 100 pF 82 RF INPUT RF OUTPUT 22 nH RFC Vd 100 pF Figure 10. Test Circuit. 5 Phase Reference Planes The positions of the reference planes used to specify the S-Parameters and Noise Parameters for this device are shown in Figure 11. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. REFERENCE PLANES TEST CIRCUIT Figure 11. Phase Reference Planes. Specifications and Statistical Parameters Several categories of parameters appear within this data sheet. Parameters may be described with values that are either “minimum or maximum,”“typical,” or “standard deviations.” The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on of a minimum of 500 parts taken from 3 non-consecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g., fits the standard “bell curve.” Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MGA-82563, these parameters are: Gain (Gtest), Noise Figure (NFtest), and Device Current (Id). Each of these guaranteed parameters is 100% tested. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (P), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as the Noise and S-parameter tables or performance curves, the data represents a nominal part taken from the “center” of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate circuit using the MGA-82563, but to also optimize and evaluate trade-offs that affect a complete wireless system, the standard deviation (V) is provided for many of the Electrical Specifications parameters (at 25°) in addition to the mean. The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation. Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 12 for example, the probability of a parameter being between ±1V is 68.3%; between ±2V is 95.4%; and between ±3V is 99.7%. 68% 95% 99% -3σ -2σ -1σ Mean (μ) +1σ +2σ (typical) +3σ Parameter Value Figure 12. Normal Distribution. FR-4 or G-10 printed circuit board materials are a good choice for most low cost wireless applications. Typical board thickness is 0.020 to 0.031 inches. The width of the 50 Ω microstriplines on PC boards in this thickness range is also very convenient for mounting chip components such as the series inductor at the input or DC blocking and bypass capacitors. For higher frequencies or for noise figure critical applications, the additional cost of PTFE/glass dielectric materials may be warranted to minimize transmission line loss at the amplifier’s input. A 0.5 inch length of 50 Ω microstripline on FR-4, for example, has approximately 0.3 dB loss at 4 GHz. This loss will add directly to the noise figure of the MGA-82563. Biasing RF Layout The RF layout in Figure 13 is suggested as a starting point for microstripline designs using the MGA-82563 amplifier. Adequate grounding is needed to obtain optimum per formance and to maintain stability. All of the ground pins of the MMIC should be connected to the RF groundplane on the backside of the PCB by means of plated through holes (vias) that are placed near the package terminals. As a minimum, one via should be located next to each ground pin to ensure good RF grounding. It is a good practice to use multiple vias to further minimize ground path inductance. 50 Ω 82 RF Input PCB Material RF Output and Vd 50 Ω The MGA-82563 is a voltage-biased device and is designed to operate from a single, +3 volt power supply with a typical current drain of 84 mA. The internal current regulation circuit allows the amplifier to be operated with voltages as low as +1.5 volts. Refer to the section titled “Operation at Bias Voltages Other than 3 Volts” for information on performance and precau tions when using other voltages. Typical Application Example The printed circuit layout in Figure 14 can serve as a design guide. This layout is a microstripline design (solid groundplane on the backside of the circuit board) with a 50 Ω input and output. The circuit is fabricated on 0.031inch thick FR-4 dielectric material. Plated through holes (vias) are used to bring the ground to the top side of the circuit where needed. Multiple vias are used to reduce the inductance of the paths to ground. Figure 13. RF Layout. OUT In addition to the RF considerations, the use of multiple vias for grounding is important for the purpose of providing a lower resistance thermal path to the heatsink. It is recommended that the PCB pads for the ground pins not be connected together underneath the body of the package. PCB traces hidden under the package cannot be adequately inspected for SMT solder quality. 6 IN +V MGA-8-A Figure 14. PCB Layout. A schematic diagram of the application circuit is shown in Figure 15. DC blocking capacitors (C1 and C2) are used at the input and output of the MMIC to isolate the device from adjacent circuits. While the input terminal of the MGA-82563 is at ground potential, it is not a current sink. If the input is connected to a preceding stage that has a voltage present, the use of the DC blocking capacitor (C1) is required. C2 The value of the DC blocking and RF bypass capacitors (C1 - C3) should be chosen to provide a small reactance (typically