MSA-0520

MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz The MSA-series is fabricated using Avago’s 10 GHz • Hermetic Metal/Beryllia Microstrip Package fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, u niformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 200 mil BeO Package Typical Biasing Configuration R bias VCC > 15 V RFC (Optional) C block IN 1 4 3 MSA C block OUT Vd = 12 V 2 MSA-0520 Absolute Maximum Ratings Parameter Device Current Power Dissipation[,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 5 mA 3.0 W +5 dBm 00°C –65 to 00°C Thermal Resistance[2,4]: θjc = 5°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 40 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol P1 dB GP ∆GP f3 dB VSWR IP3 NF50 Ω tD Vd dV/dT Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω Output Power at 1 dB Gain Compression Power Gain (|S1| ) Gain Flatness 3 dB Bandwidth[] Input VSWR Output VSWR Third Order Intercept Point 50 Ω Noise Figure Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to .0 GHz f = 0.1 to .0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to .0 GHz Units dBm dB dB GHz Min. 1.0 7.5 Typ. 3.0 8.5 ±0.75 .8 .0:1 .5:1 Max. 9.5 dBm dB psec V mV/°C 10.5 33.0 6.5 170 1.0 –16.0 13.5 Notes: 1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP).  MSA-0520 Typical Scattering Parameters (TA = 25°C, Id = 165 mA) Freq. MHz 5 5 50 100 00 400 600 800 1000 1500 000 500 3000 3500 4000 Mag .57 .5 .15 .11 .10 .10 .11 .13 .15 . .30 .37 .41 .45 .46 S11 Ang –38 –90 –111 –138 –15 –15 –147 –14 –140 –14 –156 –170 170 149 14 dB 14.4 10.7 9.5 8.9 8.8 8.7 8.6 8.5 8.4 8.0 7.4 6.7 5.6 4.5 3.3 S21 Mag 5.5 3.4 .97 .80 .75 .7 .70 .67 .64 .5 .36 .16 1.91 1.68 1.45 Ang 165 160 163 166 163 15 140 18 115 85 55 33 8 –16 –40 dB –19.4 –14.9 –14.4 –14. –14.1 –14.1 –14.0 –14.1 –14.1 –13.7 –13.3 –1.9 –1.7 –1.1 –11.7 S12 Mag .107 .180 .190 .195 .197 .198 .199 .199 .198 .06 .16 .7 .3 .49 .59 Ang 38 17 9 3 1 – –4 –6 –8 –1 –16 –18 –3 –31 –39 Mag .67 .9 .18 .11 .10 .14 .18 . .7 .34 .43 .48 .51 .55 .56 S22 Ang –35 –81 –97 –113 –15 –13 –13 –17 –131 –143 –158 –166 –177 173 16 k 0.57 0.93 1.10 1.16 1.17 1.16 1.14 1.1 1.09 0.98 0.85 0.75 0.70 0.63 0.66 Typical Performance, TA = 25°C (unless otherwise noted) 10 200 TC = +100C TC = +25C TC = –50C 36 0.1 GHz 150 GAIN (dB) IP3 (dBm) 8 32 IP3 Id (mA) 6 0.5 GHz 1.0 GHz 2.0 GHz 1.5 GHz 28 100 24 50 P1 dB (dBm) P1 dB 4 2 20 0 14 16 18 20 22 24 26 28 30 0 0 3 6 9 Vd (V) 12 15 16 80 120 160 Id (mA) 200 POWER OUT (dBm) Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 165 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz. 28 26 P1 dB (dBm) 24 22 20 18 16 -50 2.0 GHz 0.5 GHz Gp (dB) 10 4 8 3 Output VSWR 6 1.0 GHz 2 4 Id = 200 mA Id = 165 mA Id = 80 mA 2 1 Input +25 +100 0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 CASE TEMPERATURE (C) FREQUENCY (GHz) FREQUENCY, (GHz) Figure 4. Output Power @ 1 dB Gain Compression vs. Temperature, Id = 165 mA. Figure 5. Gain vs. Frequency. Figure 6. VSWR vs. Frequency, Id = 165 mA. 3 Ordering Information Part Numbers MSA-050 No. of Devices 100 Comments Bulk 200 mil BeO Package Dimensions 4 .300 ± .025 7.62 ± .64 45° 1 RF INPUT NO REFERENCE GROUND .060 1.52 .048 ± .010 1.21 ± .25 2 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .004 ± .002 .10 ± .05 GROUND .030 .76 .128 3.25 .205 5.21 .023 .57 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-755EN AV0-18EN May 14, 008