MSA-0636-TR1G

MSA-0636 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet Description Features The MSA-0636 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. • Cascadable 50Ω Gain Block The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Low Noise Figure: 2.8 dB Typical at 0.5 GHz 36 micro-X Package Typical Biasing Configuration • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB Typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package R bias VCC > 5 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 3.5 V 2 MSA-0636 Absolute Maximum Ratings Absolute Maximum[1] 50 mA 200 mW +13 dBm 150°C –65 to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 169°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω (|S 21| 2) GP Power Gain ∆GP Gain Flatness f3 dB 3 dB Bandwidth VSWR Units Min. f = 0.1 GHz dB 19.0 f = 0.1 to 0.5 GHz dB GHz Input VSWR f = 0.1 to 1.5 GHz Typ. Max. 20.5 22.0 ±0.7 ±1.0 0.9 1.4:1 Output VSWR f = 0.1 to 1.5 GHz NF 50 Ω Noise Figure f = 0.5 GHz 1.3:1 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0 IP3 Third Order Intercept Point f = 0.5 GHz dBm 14.5 tD Group Delay f = 0.5 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/°C 2.8 4.0 200 3.1 3.5 3.9 –8.0 Note: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0636-BLKG 100 Bulk MSA-0636-TR1G 1000 7" Reel 3 MSA-0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .03 .02 .02 .02 .02 .04 .07 .10 .17 .24 .31 .37 .42 .46 .48 .52 –178 –177 –164 –116 –100 –89 –96 –108 –134 –160 –178 166 151 139 126 110 20.5 20.3 20.0 19.6 19.2 18.7 17.7 16.6 14.2 12.1 10.3 8.7 7.4 6.2 5.1 4.2 10.59 10.31 9.96 9.55 9.08 8.59 7.66 6.79 5.13 4.01 3.26 2.72 2.33 2.04 1.81 1.62 171 161 152 144 136 128 115 103 79 60 48 34 21 9 –3 –15 –23.4 –22.9 –22.4 –22.0 –21.8 –21.3 –20.2 –19.4 –17.2 –15.8 –15.1 –14.4 –13.9 –13.3 –12.8 –12.2 .068 .071 .076 .079 .081 .086 .098 .107 .138 .163 .175 .190 .203 .216 .229 .245 5 8 14 19 21 24 29 31 30 26 27 24 19 16 12 8 .04 .05 .06 .07 .09 .09 .10 .11 .12 .12 .12 .11 .10 .08 .08 .09 –44 –68 –87 –104 –114 –123 –140 –156 172 148 140 135 144 167 –173 –173 1.05 1.04 1.04 1.03 1.04 1.04 1.03 1.02 1.03 1.04 1.08 1.10 1.11 1.11 1.11 1.09 Typical Performance, TA = 25°C (unless otherwise noted) 25 21 25 TC = +125°C TC = +25°C Gain Flat to DC 18 0.1 GHz 0.5 GHz 20 TC = –55°C 20 15 15 1.0 GHz 9 G p (dB) 12 Id (mA) G p (dB) 15 10 2.0 GHz 10 6 5 5 3 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0 0 1 2 FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency, Id = 16 mA. 10 5 15 20 25 30 Vd (V) I d (mA) Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 20 4.0 I d = 30 mA 19 8 GP 17 5 4 NF 4 3 P1 dB 3 2 2 1 1 0 –55 –25 0 +25 +85 +125 NF (dB) 5 4 3.5 NF (dB) 18 P1 dB (dBm) Gp (dB) 4 12 21 P1 dB (dBm) 3 I d = 20 mA I d = 16 mA 3.0 2.5 0 I d = 12 mA I d = 16 mA, 30 mA I d = 12 mA -4 0.1 I d = 20 mA 2.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 16 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2743EN AV02-0304EN - April 12, 2007