MSA-0886-BLKG

Agilent MSA-0886 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Lead-free Option Available • Usable Gain to 5.5 GHz Description The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz 86 Plastic Package • Low Noise Figure: 3.3 dB Typical at 1.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available • Lead-free Option Available Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 7.8 V 2 MSA-0886 Absolute Maximum Ratings Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 80°C. Electrical Specifications[1], TA = 25°C Symbol GP VSWR Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω Power Gain (|S 21| 2) f = 0.1 GHz f = 1.0 GHz Units Min. Typ. 20.5 32.5 22.5 dB Input VSWR f = 0.1 to 3.0 GHz 2.1:1 Output VSWR f = 0.1 to 3.0 GHz 1.9:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 27.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 6.2 7.8 Max. 9.4 –17.0 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0886-BLK 100 Bulk MSA-0886-BLKG 100 Bulk MSA-0886-TR1 1000 7" Reel MSA-0886-TR1G 1000 7" Reel MSA-0886-TR2 4000 13" Reel MSA-0886-TR2G 4000 13" Reel Note: Order part number with a “G” suffix if lead-free option is desired. 3 MSA-0886 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .63 .56 .43 .35 .30 .27 .27 .31 .35 .40 .45 .51 .61 .68 –22 –41 –69 –88 –104 –116 –144 –166 178 162 149 137 116 100 32.5 31.3 28.6 26.4 24.2 22.4 19.2 16.7 14.8 12.9 11.4 9.9 7.3 4.6 42.12 36.68 26.94 20.89 16.21 13.20 9.15 6.84 5.50 4.41 3.72 3.14 2.31 1.69 160 143 119 104 93 83 65 49 38 25 13 1 –22 –42 –36.7 –33.9 –29.1 –27.0 –25.3 –24.2 –21.6 –19.5 –17.9 –17.4 –16.8 –16.1 –15.7 –15.2 .015 .020 .035 .045 .054 .062 .083 .105 .128 .135 .145 .157 .164 .173 54 50 52 49 50 49 46 41 36 30 25 19 10 4 .62 .55 .43 .34 .29 .26 .23 .22 .21 .20 .19 .18 .17 .23 –24 –46 –79 –103 –124 –139 –172 163 149 132 124 121 130 143 0.68 0.64 0.69 0.77 0.83 0.87 0.93 0.96 0.96 1.01 1.02 1.01 1.00 0.95 Typical Performance, TA = 25°C (unless otherwise noted) 30 30 TC = +85°C TC = +25°C TC = –25°C 22 GP 21 13 15 P1 dB 20 NF (dB) 10 5 Gain Flat to DC 0 0 0.1 0.3 0.5 1.0 3.0 6.0 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. 2 4 10 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 8 3.0 6 I d = 20 mA 4 0.1 2.5 0.2 0.3 0.5 1.0 2.0 4.0 –25 0 +25 +55 +85 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 36 mA. 4.0 NF (dB) 8 Figure 2. Device Current vs. Voltage. 14 10 6 TEMPERATURE (°C) I d = 40 mA I d = 36 mA NF Vd (V) 4.5 16 4 3 2 0 FREQUENCY (GHz) 12 12 11 I d = 20 mA 10 P1 dB (dBm) 23 I d = 36 mA 20 Id (mA) G p (dB) 25 Gp (dB) 40 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. P1 dB (dBm) 35 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND RF INPUT 1 A08 RF OUTPUT AND DC BIAS 45° GROUND 1.52 ± 0.25 (0.060 ± 0.010) 4 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 0.203 ± 0.051 (0.006 ± 0.002) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. Obsoletes 5989-2083EN April 8, 2005 5989-2744EN