MSA-1105-STRG

Agilent MSA-1105 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block Description The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • 3 dB Bandwidth: 50 MHz to 1.3 GHz 05 Plastic Package • 17.5 dBm Typical P1 dB at 0.5 GHz • 3.6 dB Typical Noise Figure at 0.5 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available • Lead-free Option Available Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 5.5 V 2 MSA-1105 Absolute Maximum Ratings Absolute Maximum[1] 80 mA 550 mW +13 dBm 150°C –65 to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2]: θjc = 125°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 124°C. Electrical Specifications[1], TA = 25°C Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Symbol GP ∆GP f3 dB VSWR Power Gain (|S21 | 2) Gain Flatness 3 dB Units Min. Typ. f = 0.05 GHz f = 0.5 GHz f = 1.0 GHz dB dB dB 10.0 12.7 12.0 10.5 f = 0.1 to 1.0 GHz dB Bandwidth[2] ±1.0 GHz Input VSWR f = 0.1 to 1.0 GHz Max. 1.3 1.5:1 Output VSWR f = 0.1 to 1.0 GHz NF 50 Ω Noise Figure f = 0.5 GHz 1.7:1 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5 IP3 Third Order Intercept Point f = 0.5 GHz dBm 30.0 tD Group Delay f = 0.5 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/°C 3.6 200 4.4 5.5 6.6 –8.0 Notes: 1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). Ordering Information Part Numbers No. of Devices Comments MSA-1105-STR 10 Bulk MSA-1105-STRG 10 Bulk MSA-1105-TR1 500 7" Reel MSA-1105-TR1G 500 7" Reel MSA-1105-TR2 1500 13" Reel MSA-1105-TR2G 1500 13" Reel Note: Order part number with a “G” suffix if lead-free option is desired. 3 MSA-1105 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA) S11 Freq. GHz .0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000 S21 S12 S22 Mag Ang dB Mag Ang dB Mag Ang Mag Ang k .80 .26 .07 .06 .05 .06 .07 .09 .10 .11 .13 .15 .16 .18 .28 .38 .46 .53 –17 –62 –48 –38 –41 –58 –74 –91 –105 –116 –128 –136 –145 –152 174 150 133 118 19.0 13.9 12.8 12.7 12.7 12.6 12.4 12.2 12.0 11.8 11.5 11.2 10.9 10.5 8.8 7.1 5.6 4.2 8.94 4.98 4.36 4.33 4.31 4.26 4.19 4.10 4.00 3.88 3.76 3.63 3.49 3.37 2.75 2.28 1.90 1.62 171 163 174 174 170 162 154 146 138 131 123 116 109 102 72 48 28 11 –26.0 –16.8 –16.4 –16.3 –16.4 –16.2 –16.1 –15.8 –15.6 –15.4 –15.0 –14.7 –15.5 –14.1 –13.2 –12.1 –11.9 –11.6 .050 .144 .151 .153 .152 .155 .157 .163 .166 .171 .178 .184 .188 .197 .219 .248 .254 .262 51 15 4 2 3 5 7 8 8 10 11 11 11 11 7 0 –4 –8 .81 .26 .08 .06 .06 .08 .10 .12 .14 .17 .18 .21 .22 .24 .31 .34 .38 .40 –16 –64 –52 –48 –52 –73 –91 –105 –116 –126 –135 –144 –151 –159 170 151 134 122 0.53 0.93 1.08 1.08 1.09 1.08 1.07 1.06 1.05 1.04 1.03 1.01 1.01 1.00 1.00 0.99 1.02 1.04 Typical Performance, TA = 25°C, ZO = 50 Ω TC = +85°C TC = +25°C 80 T = –25°C C 14 ZO = 50 Ω 12 10 Id (mA) 8 6 12 40 GP NF (dB) 0 0 .02 .05 0.1 0.5 1.0 2.0 3.0 2 4 6 8 Vd (V) 5.5 22 5.0 I d = 60 mA 4.5 NF (dB) I d = 70 mA I d = 70 mA I d = 60 mA I d = 40 mA 4.0 16 3.5 I d = 40 mA 12 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 –25 +25 +85 TEMPERATURE (°C) Figure 2. Device Current vs. Voltage. Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. NF 4 3 0 FREQUENCY (GHz) P1 dB (dBm) 11 5 20 2 14 P1 dB 16 13 4 18 17 60 ZO = 75 Ω 20 18 Gp (dB) 100 16 G p (dB) P1 dB (dBm) (unless otherwise noted) 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. Figure 3. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA. 05 Plastic Package Dimensions GROUND 4 0.030 DIA 0.76 0.030 0.89 RF OUTPUT AND DC BIAS RF INPUT A 3 1 0.030 ± 0.010 0.76 ± 0.25 (4 PLCS) GROUND 2 0.135 ± 0.015 3.42 ± 0.25 (4 PLCS) 0.020 0.51 0.145 3.68 0.030 0.76 0.050 1.27 0.008 ± 0.002 0.20 ± 0.05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 0.100 ± 0.010 2.54 ± 0.25 0.0005 ± 0.010 (0.013 ± 0.25) www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. Obsoletes 5965-9557E April 5, 2005 5989-2746EN