MSA-9970

MSA-9970 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-9970 is a high performance silicon bipolar • Open Loop Feedback Amplifier Monolithic Microwave Integrated Circuit (MMIC) housed • Performance Flexibility with User Selected External in a hermetic high reliability package. This MMIC is Feedback for: designed with high open loop gain and is intended to Broadband Minimum Ripple Amplifiers be used with external resistive and reactive feedback Low Return Loss Amplifiers elements to create a variety of special purpose gain Negative Gain Slope Amplifiers blocks. • Usable Gain to 6.0 GHz Applications include very broadband, minimum ripple • 16.0 dB Typical Open Loop Gain at 1.0 GHz amplifiers with extended low frequency performance possible through the use of a high valued external • 14.5 dBm Typical P1 dB at 1.0 GHz feedback blocking capacitor; extremely well matched • Hermetic Gold-ceramic Microstrip Package (–20 dB return loss) amplifiers; and negative gain slope amplifiers for flattening MMIC cascades. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package Typical Biasing Configuration USER SELECTABLE Rf Cf R bias VCC ≥ 10 V RFC (Optional) C block IN 1 4 MSA C block 3 Vd = 7.8 V OUT 2 MSA-9970 Absolute Maximum Ratings Parameter Device Current Power Dissipation[,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 00°C –65°C to 00°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 88°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Power Gain[] (|S1| ) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 14.5 8.0 Typ. 17.5 16.0 9.0 14.5 5.0 Max. 17.5 10.0 P1 dB IP3 Vd dV/dT Output Power at 1 dB Gain Compression[] Third Order Intercept Point[] Device Voltage Device Voltage Temperature Coefficient dBm dBm V mV/°C 7.0 7.8 –16.0 8.6 Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Open loop value. Adding external feedback will alter device performance.  MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz 0.0 0.05 0.1 0. 0.4 0.6 0.8 1.0 1.5 .0 .5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 Mag .89 .90 .90 .89 .87 .85 .8 .79 .7 .65 .59 .54 .53 .5 .53 .55 .55 .55 .56 .56 S11 Ang dB 17.5 17.5 17.4 17.4 17. 17.0 16.6 16. 15.3 14. 13.0 11.6 10.3 9. 8.0 6.9 5.8 4.6 3.5 .6 S21 Mag 7.51 7.47 7.45 7.43 7.7 7.06 6.78 6.49 5.79 5.10 4.45 3.79 3.8 .87 .51 .1 1.94 1.70 1.50 1.34 Ang 179 177 174 168 156 145 134 14 100 77 61 4 6 10 –4 –17 –31 –43 –53 –63 dB –37. –35.6 –33. –9.6 –4.4 –0.8 –18.8 –17.0 –14.6 –13.4 –1.9 –1.5 –1.4 –1.5 –1.6 –1.8 –13. –13.6 –13.8 –14.0 S12 Mag Ang 4 34 43 61 63 58 5 44 9 16 7 –3 –14 – –30 –37 –44 –48 –54 –59 Mag .93 .9 .93 .93 .91 .90 .87 .84 .74 .64 .57 .51 .45 .39 .34 .31 .30 .3 .37 .4 S22 Ang k 1.01 .83 .70 .39 .4 .1 .1 .4 .8 .34 .39 .46 .53 .59 .66 .7 .80 .88 .94 .97 –1 –3 –6 –1 –4 –36 –47 –59 –86 –113 –133 –155 –174 168 15 140 130 11 114 107 .014 .017 .0 .033 .061 .091 .115 .141 .186 .15 .7 .36 .39 .38 .34 .8 .0 .09 .03 .01 –1 –3 –6 –13 –7 –40 –53 –66 –96 –13 –143 –163 178 164 155 153 154 157 158 157 Typical Performance, TA = 25°C (unless otherwise noted) 21 18 15 Gp (dB) Id (mA) 12 9 6 10 3 0 .05 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 Vd (V) 8 10 FREQUENCY (GHz) 50 TC = +125C TC = +25C 40 T = –55C C P1 dB (dBm) 30 19 17 15 13 11 9 7 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) Id = 25 mA Id = 35 mA Id = 45 mA 20 Figure 1. Open Loop Power Gain vs. Frequency, Id = 35 mA. 20 0.1 GHz 1.0 GHz 15 Gp (dB) Figure 2. Device Current vs. Voltage. 17 Gp (dB) Figure 3. Open Loop Output Power at 1 dB Gain Compression vs. Frequency. 16 Gp 15 10 4.0 GHz P1 dB (dBm) 14 P1 dB 13 –55 –25 +25 +85 +125 5 10 20 30 40 50 Id (mA) TEMPERATURE (C) Figure 4. Open Loop Power Gain vs. Current. Figure 5. Open Loop Output Power at 1 dB Gain Compression and Open Loop Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 35 mA. 3 Ordering Information Part Numbers MSA-9970 No. of Devices 100 Comments Bulk 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND .004 ± .002 .10 ± .05 .070 1.78 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .495 ± .030 12.57 ± .76 .035 .89 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-76EN AV0-135EN May 15, 008