MMBT4403LT1

@ vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER TJ, Tstg: -55℃ to +150℃ 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Ic=-100µA , IE=0 IC= -1mA , IB=0 IE=-100µA, IC=0 VCB=-35V, IE=0 VCE=-35V, IB=0 VEB=-4V, IC=0 VCE=-2V, IC= -150mA IC=-150mA, IB=-15mA IC=- 150mA, IB=-15mA VCE= -10V, IC= -20mA -40 -40 -5 -0.1 -0.1 -0.1 100 300 -0.4 -0.95 200 0. 4 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1. 0 2. 4 1. 3 2. 9 1. 9 0. 95 V V V µA µA µA V V MHz fT f = 100MHz DEVICE MARKING MMBT4403LT1=2T