MMBT5551LT1

@ vic SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 FEATURES Power dissipation PCM: 0.3 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 0. 95 Collector current ICM: 0.6 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. 9 1. 9 Unit: mm unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Ic= 100µA, IE=0 Ic= 0.1mA, IB=0 IE= 100µA, IC=0 VCB=180V, IE=0 VEB= 4V, IC=0 VCE= 5V, IC= 1mA VCE= 5V, IC=10mA VCE= 5V, IC=50mA IC=50 mA, IB= 5mA IC= 50 mA, IB= 5mA VCE=10V, IC= 10mA, f=100MHz 180 160 6 0.1 0.1 80 80 30 0.5 1 80 250 0. 4 V V V µA µA DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) V V MHz fT DEVICE MARKING MMBT5551LT1=G1