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12061E103MAT2A

12061E103MAT2A

  • 厂商:

    AVX(艾维克斯)

  • 封装:

    1206

  • 描述:

    贴片电容(MLCC) 1206 10nF ±20% 100V Z5U

  • 详情介绍
  • 数据手册
  • 价格&库存
12061E103MAT2A 数据手册
Z5U Dielectric General Specifications Z5U formulations are “general-purpose” ceramics which are meant primarily for use in limited temperature applications where small size and cost are important. Z5U show wide variations in capacitance under influence of environmental and electrical operating conditions. Despite their capacitance instability, Z5U formulations are very popular because of their small size, low ESL, low ESR and excellent frequency response. These features are particularly important for decoupling application where only a minimum capacitance value is required. PART NUMBER (see page 3 for complete part number explanation) 0805 5 E 104 Z A T 2 A Size (L" x W") Voltage 25V = 3 50V = 5 Dielectric Z5U = E Capacitance Code Capacitance Tolerance Preferred Z = +80% –20% M = ±20% Failure Rate A = Not Applicable Terminations T = Plated Ni and Solder Packaging 2 = 7" Reel 4 = 13" Reel Special Code A = Std. Product PERFORMANCE CHARACTERISTICS Capacitance Range Capacitance Tolerances Operating Temperature Range Temperature Characteristic Voltage Ratings Dissipation Factor Insulation Resistance (+25°C, RVDC) Dielectric Strength Test Voltage Test Frequency 12 0.01 µF to 1.0 µF Preferred +80 –20% others available: ±20%, +100 –0% +10°C to +85°C +22% to –56% max. 25 and 50VDC (+85°C) 4% max. 10,000 megohms min. or 1000 MΩ - µF min., whichever is less 250% of rated voltage for 5 seconds at 50 mamp max. current 0.5 ± 0.2 Vrms 1 KHz Z5U Dielectric Typical Characteristic Curves** Temperature Coefficient Variation of Impedance with Cap Value Impedance vs. Frequency 1206 -Z5U 100.00 10.00 Impedance, ⍀ % ⌬ Capacitance +30 +20 +10 0 -10 -20 -30 -40 -50 -60 +10 +25 +30 +35 +40 +45 +50 +55 +65 +85 Temperature °C 10,000 pF 1.00 100,000 pF 0.10 0.01 1 100 10 1,000 Frequency, MHz Variation of Impedance with Chip Size Impedance vs. Frequency .33 ␮F - Z5U 1000 0 -10 Z5U 1206 Z5U 1210 Z5U 1812 100 |Z| (ohms) % ⌬ Capacitance ⌬ Capacitance vs. Frequency -20 -30 10 1 -40 1KHz 10 KHz 100 KHz 1 MHz 10 MHz 0.1 0.001 Frequency 0.01 0.1 1 10 100 1,000 Variation of Impedance with Ceramic Formulation Impedance vs. Frequency .1␮F X7R vs. Z5U 0805 nsu ation Resistance vs Temperature 100,000 10000 10,000 X7R 0805 Z5U 0805 1000 1,000 |Z| (ohms) Insulation Resistance (Ohm-Farads) Frequency, MHz 100 0 +20 +30 +40 +50 +60 +70 100 10 1 0.1 +80 Temperature °C 0.01 0.001 0.01 0.1 1 10 100 1,000 Frequency, MHz SUMMARY OF CAPACITANCE RANGES VS. CHIP SIZE Style 0603* 0805* 1206* 1210* 1808 1812* 1825* 2225 25V .01µF - .047µF .01µF - .12µF .01µF - .33µF .01µF - .56µF .01µF - .56µF .01µF - 1.0µF .01µF - 1.0µF .01µF - 1.0µF 50V .01µF - .027µF .01µF - 0.1µF .01µF - .33µF .01µF - .47µF .01µF - .47µF .01µF - 1.0µF .01µF - 1.0µF .01µF - 1.0µF * Standard Sizes ** For additional information on performance changes with operating conditions consult AVX’s software SpiCap. 13 Z5U Dielectric Capacitance Range PREFERRED SIZES ARE SHADED SIZE 0603* 0805 1206 1210 Standard Reel Packaging All Paper Paper/Embossed Paper/Embossed Paper/Embossed 1.60 ± .15 (.063 ± .006) .81 ± .15 (.032 ± .006) .90 (.035) .35 ± .15 (.014 ± .006) 2.01 ± .20 (.079 ± .008) 1.25 ± .20 (.049 ± .008) 1.30 (.051) .50 ± .25 (.020 ± .010) 3.20 ± .20 (.126 ± .008) 1.60 ± .20 (.063 ± .008) 1.50 (.059) .50 ± .25 (.020 ± .010) 3.20 ± .20 (.126 ± .008) 2.50 ± .20 (.098 ± .008) 1.70 (.067) .50 ± .25 (.020 ± .010) WVDC 50 25 50 25 L 50 W 䉲 䉲 *Reflow soldering only. 50 䉲 .010 .012 .015 .018 .022 .027 .033 .039 .047 .056 .068 .082 .10 .12 .15 .18 .22 .27 .33 .39 .47 .56 .68 .82 1.0 1.5 25 䉲 Cap (µF) 25 䉲 (t) Terminal 䉲 (T) Max. Thickness T 䉲 (W) Width MM (in.) MM (in.) MM (in.) MM (in.) 䉲 (L) Length t = Paper Tape = Embossed Tape NOTES: For low profile chips, see page 19. 14 Z5U Dielectric Capacitance Range PREFERRED SIZES ARE SHADED 1808* 1812* 1825* 2225* All Embossed All Embossed All Embossed All Embossed 04.57 ± .25 (.180 ± .010) 2.03 ± .25 (.080 ± .010) 1.52 (.060) .64 ± .39 (.025 ± .015) 4.50 ± .30 (.177 ± .012) 3.20 ± .20 (.126 ± .008) 1.70 (.067) .61 ± .36 (.024 ± .014) 4.50 ± .30 (.177 ± .012) 6.40 ± .40 (.252 ± .016) 1.70 (.067) .61 ± .36 (.024 ± .014) 5.72 ± .25 (.225 ± .010) 6.35 ± .25 (.250 ± .010) 1.70 (.067) .64 ± .39 (.025 ± .015) (t) Terminal 25 25 50 25 50 25 L 50 W 䉲 䉲 *Reflow soldering only. 50 䉲 .010 .012 .015 .018 .022 .027 .033 .039 .047 .056 .068 .082 .10 .12 .15 .18 .22 .27 .33 .39 .47 .56 .68 .82 1.0 1.5 䉲 WVDC Cap (µF) 䉲 (T) Max. Thickness T 䉲 (W) Width MM (in.) MM (in.) MM (in.) MM (in.) 䉲 (L) Length 䉲 SIZE Standard Reel Packaging t = Paper Tape = Embossed Tape NOTES: For low profile chips, see page 19. 15 Basic Capacitor Formulas I. Capacitance (farads) English: C = .224 K A TD Metric: C = .0884 K A TD XI. Equivalent Series Resistance (ohms) E.S.R. = (D.F.) (Xc) = (D.F.) / (2 π fC) XII. Power Loss (watts) Power Loss = (2 π fCV2) (D.F.) XIII. KVA (Kilowatts) KVA = 2 π fCV2 x 10 -3 II. Energy stored in capacitors (Joules, watt - sec) E = 1⁄2 CV2 XIV. Temperature Characteristic (ppm/°C) T.C. = Ct – C25 x 106 C25 (Tt – 25) III. Linear charge of a capacitor (Amperes) dV I=C dt XV. Cap Drift (%) C1 – C2 C.D. = C1 IV. Total Impedance of a capacitor (ohms) Z = 冑 RS + (XC - XL ) V. Capacitive Reactance (ohms) 1 xc = 2 π fC 2 2 XVI. Reliability of Ceramic Capacitors Vt L0 X Tt Y = Lt Vo To ( ) ( ) VI. Inductive Reactance (ohms) xL = 2 π fL XVII. Capacitors in Series (current the same) Any Number: 1 = 1 + 1 --- 1 CT C1 C2 CN C1 C2 Two: CT = C1 + C2 VII. Phase Angles: Ideal Capacitors: Current leads voltage 90° Ideal Inductors: Current lags voltage 90° Ideal Resistors: Current in phase with voltage XVIII. Capacitors in Parallel (voltage the same) CT = C1 + C2 --- + CN VIII. Dissipation Factor (%) D.F.= tan ␦ (loss angle) = E.S.R. = (2 πfC) (E.S.R.) Xc IX. Power Factor (%) P.F. = Sine ␦ (loss angle) = Cos (phase angle) f P.F. = (when less than 10%) = DF XIX. Aging Rate A.R. = % D C/decade of time XX. Decibels db = 20 log V1 V2 X. Quality Factor (dimensionless) Q = Cotan ␦ (loss angle) = 1 D.F. METRIC PREFIXES Pico Nano Micro Milli Deci Deca Kilo Mega Giga Tera 2 X 10-12 X 10-9 X 10-6 X 10-3 X 10-1 X 10+1 X 10+3 X 10+6 X 10+9 X 10+12 x 100 SYMBOLS K = Dielectric Constant f = frequency Lt = Test life A = Area L = Inductance Vt = Test voltage TD = Dielectric thickness ␦ = Loss angle Vo = Operating voltage V = Voltage f = Phase angle Tt = Test temperature t = time X&Y = exponent effect of voltage and temp. To = Operating temperature Rs = Series Resistance Lo = Operating life How to Order Part Number Explanation EXAMPLE: 08055A101JAT2A 0805 Size (L" x W") 0402 0504 0603 0805 1005 0907 1206 1210 1505 1805 1808 1812 1825 2225 3640 5 A 101 Dielectric C0G (NP0) = A X7R = C X5R = D Z5U = E Y5V = G Voltage 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2 250V = V 500V = 7 600V = C 1000V = A 1500V = S 2000V = G 2500V = W 3000V = H 4000V = J 5000V = K J C D F G J K M Z P A Capacitance Tolerance = ±.25 pF* = ±.50 pF* = ±1% (≥ 25 pF) = ±2% (≥ 13 pF) = ±5% = ±10% = ±20% = +80%, -20% = +100%, -0% Capacitance Code (2 significant digits + no. of zeros) Examples: 10 pF = 100 100 pF = 101 1,000 pF = 102 22,000 pF = 223 220,000 pF = 224 1 µF = 105 For values below 10 pF, use “R” in place of decimal point, e.g., 9.1 pfd = 9R1. T 2 Terminations Standard: T = Ni and Tin Plated Others: 7 = Plated Ni Gold Plated 1 = Pd/Ag Failure Rate A = Not Applicable A Special** Code A = Standard Product Non-Standard P = Embossed unmarked M = Embossed marked E = Standard packaging marked Low Profile Chips Only Max. Thickness T = .66mm (.026") S = .56mm (.022") R = .46mm (.018") Packaging** Recommended: 2 =7" Reel 4 =13" Reel Others: 7 = Bulk Cassette 9 = Bulk * C&D tolerances for ⱕ10 pF values. ** Standard Tape and Reel material depends upon chip size and thickness. See individual part tables for tape material type for each capacitance value. Note: Unmarked product is standard. Marked product is available on special request, please contact AVX. Standard packaging is shown in the individual tables. Non-standard packaging is available on special request, please contact AVX. 3 General Specifications Environmental THERMAL SHOCK MOISTURE RESISTANCE Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 2.5% or ± .25pF, whichever is greater X7R: ≤ ± 7.5% Z5U: ≤ ± 20% Y5V: ≤ ± 20% Q, Tan Delta To meet initial requirement Insulation Resistance C0G (NP0), X7R: To meet initial requirement Z5U, Y5V: ≥ Initial Value x 0.1 Dielectric Strength No problem observed Measuring Conditions Step Temperature °C Time (minutes) C0G (NP0), X7R: -55° ± 2° 1 Z5U: +10° ± 2° 30 ± 3 Y5V: -30° ± 2° 2 Room Temperature #3 C0G (NP0), X7R: +125° ± 2° 3 30 ± 3 Z5U, Y5V: +85° ± 2° 4 Room Temperature #3 Repeat for 5 cycles and measure after 48 hours ± 4 hours (24 hours for C0G (NP0)) at room temperature. Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 5% or ± .5pF, whichever is greater X7R: ≤ ± 10% Z5U: ≤ ± 30% Y5V: ≤ ± 30% Q, Tan Delta C0G (NP0):≥ 30pF........................Q ≥ 350 ≥ 10pF, < 30pF ...........Q ≥ 275+5C/2 < 10pF ........................Q ≥ 200+10C X7R: Initial requirement + .5% Z5U: Initial requirement + 1% Y5V: Initial requirement + 2% IMMERSION Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 2.5% or ± .25pF, whichever is greater X7R: ≤ ± 7.5% Z5U: ≤ ± 20% Y5V: ≤ ± 20% Q, Tan Delta To meet initial requirement Insulation Resistance C0G (NP0), X7R: To meet initial requirement Z5U, Y5V: ≥ Initial Value x 0.1 Dielectric Strength No problem observed Measuring Conditions Step Temperature °C Time (minutes) +65 +5/-0 1 15 ± 2 Pure Water 0±3 2 15 ± 2 NaCl solution Repeat cycle 2 times and wash with water and dry. Store at room temperature for 48 ± 4 hours (24 hours for C0G (NP0)) and measure. 22 Insulation Resistance ≥ Initial Value x 0.3 Measuring Conditions Step Temp. °C Humidity % Time (hrs) 1 +25->+65 90-98 2.5 2 +65 90-98 3.0 3 +65->+25 80-98 2.5 4 +25->+65 90-98 2.5 5 +65 90-98 3.0 6 +65->+25 80-98 2.5 7 +25 90-98 2.0 7a -10 uncontrolled – 7b +25 90-98 – Repeat 20 cycles (1-7) and store for 48 hours (24 hours for C0G (NP0)) at room temperature before measuring. Steps 7a & 7b are done on any 5 out of first 9 cycles. General Specifications Environmental STEADY STATE HUMIDITY (No Load) Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 5% or ± .5pF, whichever is greater X7R: ≤ ± 10% Z5U: ≤ ± 30% Y5V: ≤ ± 30% Q, Tan Delta C0G (NP0): ≥ 30pF......................Q ≥ 350 ≥ 10pF, < 30pF.........Q ≥ 275+5C/2 < 10pF ....................Q ≥ 200+10C X7R: Initial requirement + .5% Z5U: Initial requirement + 1% Y5V: Initial requirement + 2% Insulation Resistance ≥ Initial Value x 0.3 Measuring Conditions Store at 85 ± 5% relative humidity and 85°C for 1000 hours, without voltage. Remove from test chamber and stabilize at room temperature and humidity for 48 ± 4 hours (24 ±2 hours for C0G (NP0)) before measuring. Charge and discharge currents must be less than 50ma. LOAD HUMIDITY Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 5% or ± .5pF, whichever is greater X7R: ≤ ± 10% Z5U: ≤ ± 30% Y5V: ≤ ± 30% Q, Tan Delta C0G (NP0): ≥ 30pF .....................Q ≥ 350 ≥ 10pF,< 30pF .........Q ≥ 275+5C/2 < 10pF ....................Q ≥ 200+10C X7R: Initial requirement + .5% Z5U: Initial requirement + 1% Y5V: Initial requirement + 2% Insulation Resistance C0G (NP0), X7R: To meet initial value x 0.3 Z5U, Y5V: ≥ Initial Value x 0.1 Charge devices with rated voltage in test chamber set at 85 ± 5% relative humidity and 85°C for 1000 (+48,-0) hours. Remove from test chamber and stabilize at room temperature and humidity for 48 ± 4 hours (24 ±2 hours for C0G (NP0)) before measuring. Charge and discharge currents must be less than 50ma. LOAD LIFE Specification Appearance No visual defects Capacitance Variation C0G (NP0): ± 3% or ± .3pF, whichever is greater X7R: ≤ ± 10% Z5U: ≤ ± 30% Y5V: ≤ ± 30% Q, Tan Delta C0G (NP0): ≥ 30pF......................Q ≥ 350 ≥ 10pF, < 30pF.........Q ≥ 275+5C/2 < 10pF ....................Q ≥ 200+10C X7R: Initial requirement + .5% Z5U: Initial requirement + 1% Y5V: Initial requirement + 2% Insulation Resistance C0G (NP0), X7R: To meet initial value x 0.3 Z5U, Y5V: ≥ Initial Value x 0.1 Charge devices with twice rated voltage in test chamber set at +125°C ± 2°C for C0G (NP0) and X7R, +85° ± 2°C for Z5U, and Y5V for 1000 (+48,-0) hours. Remove from test chamber and stabilize at room temperature for 48 ± 4 hours (24 ±2 hours for C0G (NP0)) before measuring. Charge and discharge currents must be less than 50ma. 23 General Specifications Mechanical END TERMINATION ADHERENCE Specification No evidence of peeling of end terminal Measuring Conditions After soldering devices to circuit board apply 5N (0.51kg f) for 10 ± 1 seconds, please refer to Figure 1. BEND STRENGTH Speed = 1mm/sec 2mm Deflection R340mm 45mm 5N FORCE 45mm Supports Figure 2. Bend Strength DEVICE UNDER TEST TEST BOARD Figure 1. Terminal Adhesion RESISTANCE TO VIBRATION Specification Appearance: No visual defects Capacitance Within specified tolerance Q, Tan Delta To meet initial requirement Insulation Resistance C0G (NP0), X7R ⱖ Initial Value x 0.3 Z5U, Y5V ⱖ Initial Value x 0.1 Measuring Conditions Vibration Frequency 10-2000 Hz Maximum Acceleration 20G Swing Width 1.5mm Test Time X, Y, Z axis for 2 hours each, total 6 hours of test SOLDERABILITY Specification ⱖ 95% of each termination end should be covered with fresh solder Measuring Conditions Dip device in eutectic solder at 230 ± 5°C for 2 ± .5 seconds 24 Specification Appearance: No visual defects Capacitance Variation C0G (NP0): ± 5% or ± .5pF, whichever is larger X7R: ≤ ± 12% Z5U: ≤ ± 30% Y5V: ≤ ± 30% Insulation Resistance C0G (NP0): ≥ Initial Value x 0.3 X7R: ≥ Initial Value x 0.3 Z5U: ≥ Initial Value x 0.1 Y5V: ≥ Initial Value x 0.1 Measuring Conditions Please refer to Figure 2 Deflection: 2mm Test Time: 30 seconds RESISTANCE TO SOLDER HEAT Specification Appearance: No serious defects,
12061E103MAT2A
物料型号:Z5U Dielectric AVX,这是一种通用陶瓷电容器,主要用于尺寸小和成本敏感的有限温度应用。

器件简介:Z5U电容器因其小尺寸、低ESL(等效串联电感)、低ESR(等效串联电阻)和出色的频率响应而非常受欢迎。尽管它们在环境和电气工作条件下电容变化较大,但这些特性对于仅需要最小电容值的去耦应用尤为重要。

引脚分配:文档中没有明确提到引脚分配,但提到了封装类型,如0805、1206、1210等,这些通常指的是电容器的物理尺寸和引脚间距。

参数特性: - 电容范围:从0.01微法拉到1.0法拉 - 电容公差:优选+80%-20%,其他可选如+20%,+100%-0% - 工作温度范围:+10°C至+85°C - 温度特性:最大变化+22%至-56% - 电压等级:25VDC和50VDC(在+85°C时) - 耗散因子:最大4% - 绝缘电阻:最小10,000兆欧姆或1000兆欧-法拉,取较小值 - 介质强度:额定电压的250%,测试电流最大50毫安,持续5秒

功能详解:Z5U电容器在不同温度、频率和陶瓷配方下的特性变化进行了详细说明,包括阻抗随电容值、频率和芯片尺寸的变化,以及温度系数和绝缘电阻随温度的变化。

应用信息:Z5U电容器适用于去耦应用,其中只需要最小电容值,并且对尺寸和成本有限制。

封装信息:提供了不同尺寸的电容器的封装信息,包括0603、0805、1206、1210、1808、1812、1825和2225等,以及它们的电容范围和推荐尺寸。
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