Microwave Single Layer Ceramic &
MOS Capacitors
080420-1
IMPORTANT INFORMATION/DISCLAIMER
All product specifications, statements, information and data (collectively, the “Information”) in this datasheet or
made available on the website are subject to change. The customer is responsible for checking and verifying
the extent to which the Information contained in this publication is applicable to an order at the time the order is
placed. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee,
warranty, or responsibility of any kind, expressed or implied.
Statements of suitability for certain applications are based on KYOCERA AVX’s knowledge of typical operating
conditions for such applications, but are not intended to constitute and KYOCERA AVX specifically disclaims
any warranty concerning suitability for a specific customer application or use.
ANY USE OF PRODUCT OUTSIDE OF SPECIFICATIONS OR ANY STORAGE OR INSTALLATION
INCONSISTENT WITH PRODUCT GUIDANCE VOIDS ANY WARRANTY.
The Information is intended for use only by customers who have the requisite experience and capability to
determine the correct products for their application. Any technical advice inferred from this Information or
otherwise provided by KYOCERA AVX with reference to the use of KYOCERA AVX’s products is given without
regard, and KYOCERA AVX assumes no obligation or liability for the advice given or results obtained.
Although KYOCERA AVX designs and manufactures its products to the most stringent quality and safety
standards, given the current state of the art, isolated component failures may still occur. Accordingly, customer
applications which require a high degree of reliability or safety should employ suitable designs or other
safeguards (such as installation of protective circuitry or redundancies) in order to ensure that the failure of an
electrical component does not result in a risk of personal injury or property damage.
Unless specifically agreed to in writing, KYOCERA AVX has not tested or certified its products, services or
deliverables for use in high risk applications including medical life support, medical device, direct physical
patient contact, water treatment, nuclear facilities, weapon systems, mass and air transportation control,
flammable environments, or any other potentially life critical uses. Customer understands and agrees that
KYOCERA AVX makes no assurances that the products, services or deliverables are suitable for any highrisk uses. Under no circumstances does KYOCERA AVX warrant or guarantee suitability for any customer
design or manufacturing process.
Although all product–related warnings, cautions and notes must be observed, the customer should not assume
that all safety measures are indicted or that other measures may not be required.
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
121119
– microwave single layer ceramic & mos capacitors –
Microwave Single Layer Ceramic Capacitors
Table of Contents
Single Layer Ceramic Capacitors (SLC's)
General Information.................................................................................................................................................................................1
How to Order
GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics....................................................................................................................................................................3
X7S Dielectrics – Code Z..........................................................................................................................................................................7
NP0, Temp Compensating & X7R Dielectrics................................................................................................................................................8
GHB/GH** Series
Dual-Cap & Multi-Cap Arrays..................................................................................................................................................................
10
ULTRA MAXI Series................................................................................................................................................................................ 12
Introduction to Microwave Capacitors. ................................................................................................................................................... 13
Microwave Parameters..........................................................................................................................................................................
Electrical Model...................................................................................................................................................................................
Transmission Lines. .............................................................................................................................................................................
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids...........................................................................................................
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
– microwave single layer ceramic & mos capacitors –
14
17
20
22
Microwave SLCs
Single Layer Ceramic Capacitors (SLC's)
GENERAL INFORMATION
KYOCERA AVX offers a complete line of Single Layer Ceramic (SLC)
Capacitors with dielectric constants ranging from 14 (NP0) to
greater than 30,000 (X7R). Product offerings include standard SLC’s
(with & without borders) in all dielectric families. SLC’s with doublesided borders are now available in most dielectrics as indicated in
Table I. Also available are Dual-Caps & Multi-Cap Arrays as well as
specialized assemblies for DC Blocking thru 40 GHz.
Standard terminations are Ti/W-Au and Ti/W-Ni-Au. All terminations
are sputtered providing excellent surfaces for wire bonding and
exceptional adhesion characteristics. Wire bond tests are performed
on every material lot. Bond strength must meet a minimum of 6
and 20 grams for 1 and 2 mil Au wire respectively (as compared
to MIL-STD-883 limits of 3 and 8 grams) before being released to
production (40 bonds with each wire size, zero failures permitted).
Our Maxi & Maxi+ grain boundary barrier layer (GBBL) Single Layer
Ceramics provide a combination of high capacitance, voltage rating
and small footprints unmatched in the industry and are ideally suited
for broadband bypass applications. Additionally, our “Z” dielectric
(also a GBBL material system) offers a cost effective alternative to
Z5U & Y5V dielectrics with a much improved temperature coefficient
over an expanded operating temperature range of –55°C to +125°C.
All parts are capable of meeting or exceeding the environmental &
mechanical specifications in Table II.
In addition to an extensive offering of standard catalog devices,
custom designs (and prototypes) are available upon request.
Delivery of samples seldom exceeds two weeks once design
parameters have been established.
HOW TO ORDER
(see individual sheets for more detail)
GH
02
5
8
102
M
A
6N
Type/
Style
Size
Voltage
Rating
Dielectric Code
Capacitance
Value
Capacitance
Tolerance
Termination
Code
Packaging
Code
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
1
Microwave SLCs
Single Layer Ceramic Capacitors (SLC's)
GENERAL INFORMATION
TABLE I - Dielectric Codes, Types & Product Styles
Dielectric
Type & Code
NPO
Temp
Comp
X7R
X7S
X7R
X7R
X7R
A
A
A
4
7
Y
C
C
C
Z
Z
Z
Z
Z
8 (Maxi)
9 (Maxi+)
0 (Ultra
Maxi)
Dielectric
Constant
(typ)
14
31
60
200
420
650
1,100
2,000
4,200
2,500
5,000
9,000
14,000
18,000
20,000
30,000
Temperature
Coefficient
Temperature
Range
0±30 ppm/°C
0±30 ppm/°C
-55°C to +125°C
0±30 ppm/°C
±7.5% (non-linear)
-2000±500 ppm/°C -55°C to +125°C
-4700±1500 ppm/°C
60,000
Min Q
at 1MHz
10,000
660
660
400
200
400
40
40
33
Max.DF (%)*
1MHz
0.01
0.15
0.15
0.25
0.7
0.3
1KHz
N/A
N/A
N/A
N/A
0.3
0.3
2.5
2.5
2.5
104 Meg Ohms
±22%
-55°C to +125°C
30
2.5
104 Meg Ohms
±15%
-55°C to +125°C
30
2.5
104 Meg Ohms
GB
W
L
W
L
T
T
B
TABLE II
2
105 Meg Ohms
-55°C to +125°C
GH
MIL-STD-883
MIL-STD-883
MIL-PRF-49464
MIL-PRF-49464
MIL-PRF-49464
MIL-STD-202
MIL-STD-202
105 Meg Ohms
±15%
* Capacitance & DF are measured at 1MHz for values ≤100pF and 1KHz for capacitance values >100pF
MIL Reference
IR (Min)
25°C
Parameter
Bond Strength
Shear Strength
Thermal Shock
Voltage Conditioning
Temperatue Coefficient
Low Voltage Humidity
Life Test
Method or
Paragraph
2011.7
2019
4.8.3
4.8.3
4.8.10
103 A
108
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
122719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
GENERAL INFORMATION
Maxi and Maxi+ are both KYOCERA AVX proprietary intergranular
barrier layer dielectric formulations. Both use SrTiO3 as their major
constituent and have dielectric constants exceeding 20,000 and
30,000 respectively. Grain boundary barrier layer (GBBL) capacitors
have been well discussed in various literature sources and, while
simple in principle, their resulting electrical properties are dependent
on a complex combination of materials and process technology.
KYOCERA AVX’s Maxi & Maxi+ dielectrics have the distinctive
properties that are ideal for extremely broadband by-pass
capacitors. This built-in feature gives these products a unique
disspersive effect that is illustrated in the accompanying curves.
KYOCERA AVX’s ability to control the prerequisite relationships
between materials and process has resulted in dielectrics that make
these Single Layer Ceramics especially well suited for applications
requiring high frequency performance well into the millimeter band.
These GBBL dielectrics are also available in low loss versions that
are comparable to conventional barium titanate based dielectrics.
Performance is likewise similar in that these materials exhibit a
very pronounced dip at their resonant frequency. These designs are
excellent choices for applications requiring the combined attributes
of very small size and precise cut-off frequencies. Additional
information on these high Q products may be obtained by contacting
the factory or your local KYOCERA AVX representative.
Sample kits are available
MAXI KIT Catalog # KITSLCK20KSAMPL includes 10 each:
GH0158101MA6N, GH0258221MA6N, GH0258471MA6N,
GH0358102MA6N, GH0458182MA6N
All Maxi & Maxi+ dielectrics exhibit X7R temperature performance of
±15% from –55°C to +125°C. Electrical characteristics, as outlined
in MIL-C-49464, will meet those specified for Class II dielectrics,
rather than the less stringent Class IV, which typically describes
GBBL dielectrics.
MAXI+ KIT Catalog # KITSLCK30KSAMPL includes 10 each:
GH0159331MA6N, GH0259751MA6N, GH0359152MA6N,
GH0459302MA6N, GH0559602MA6N
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
3
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
DIMENSIONS: inches (millimeters)
(L) Length
(W) Width
(T) Thickness
(B) Border
GH/GB01
.015±.005
(.381±.127)
.015±.005
(.381±.127)
GH/GB02
.025±.005
(.635±.127)
.025±.005
(.635±.127)
GH/GB03
.035±.005
(.889±.127)
.035±.005
(.889±.127)
.007±.002 (.178±.051)
.002±.001 (.051±.025)
GH/GB04
.050±.010
(1.27±.254)
.050±.010
(1.27±.254)
GH/GB05
.070±.010
(1.78±.254)
.070±.010
(1.78±.254)
GH/GB06
.090±.010
(2.29±.254)
.090±.010
(2.29±.254)
GH SERIES: MAXI SINGLE LAYER CAPACITORS WITHOUT BORDERS
Cap (pF)
Min
Max
68
330
Cap (pF)
Min
Max
330
750
Cap (pF)
Min
Max
750
1200
Cap (pF)
Min
Max
1200
2700
Cap (pF)
Min
Max
2700
4700
Cap (pF)
Min
Max
4700
8200
GH SERIES: MAXI+ SINGLE LAYER CAPACITORS WITHOUT BORDERS
Cap (pF)
Min
Max
330
390
Cap (pF)
Min
Max
390
1000
Cap (pF)
Min
Max
1000
1800
Cap (pF)
Min
Max
1800
3300
Cap (pF)
Min
Max
3300
6800
Cap (pF)
Min
Max
6800
10000
GB SERIES: MAXI SINGLE LAYER CAPACITORS WITH BORDERS
Cap (pF)
Min
Max
51
220
Cap (pF)
Min
Max
220
560
Cap (pF)
Min
Max
560
1000
Cap (pF)
Min
Max
1000
2200
Cap (pF)
Min
Max
2200
4700
Cap (pF)
Min
Max
4700
8200
GB SERIES: MAXI+ SINGLE LAYER CAPACITORS WITH BORDERS
Cap (pF)
Min
Max
220
330
HOW TO ORDER
Cap (pF)
Min
Max
820
1500
Cap (pF)
Min
Max
1500
2700
Cap (pF)
Min
Max
2700
6800
Cap (pF)
Min
Max
6800
10000
GH
02
5
8
102
M
A
6N
Type Code
Case Size
Working
Voltage
Code
Dielectric
Code
Capacitance
Value
Capacitance
Tolerance
Termination
Code
Packaging
Code
GH = w/o borders
GB = w/ borders
4
Cap (pF)
Min
Max
330
820
01
02
03
04
05
06
5 = 50 VDC
8 = Maxi
(k = 20,000)
9 = Maxi+
(k = 30,000)
EIA Cap
Code in pF
K = ±10%
M = ±20%
Z = +80% -20%
A = Au
6N = Antistatic
(100 μ-in min)
Waffle Pack
over
Ti/W (1000 Å nom)
also available
N = Ti/W-Ni-Au
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
PERFORMANCE CURVES
S21 FORWARD TRANSMISSION
Capacitance = 220 pF Q = 50 @ 1 MHz
Size: L = .017" W = .017" T = .007"
LOG MAG
< REF = -20 dB
10 dB/DIV
Marker 1
-12.6 dB @ 51 MHz
Marker 2
-17.6 dB @ 2.06 GHz
1
Marker 3
-22.0 dB @ 12.86 GHz
2
3
4
0.05
Marker 4
-21.6 dB @ 25.08 GHz
26.5
FREQUENCY - GHz
Capacitance = 470 pF Q = 50 @ 1 MHz
Size: L = .024" W = .024" T = .007"
LOG MAG
< REF = -24 dB
5 dB/DIV
Marker 1
-17.4 dB @ 51 MHz
Marker 2
-22.4 dB @ 2.06 GHz
1
Marker 3
-27.9 dB @ 8.98 GHz
4
2
Marker 4
-21.4 dB @ 25.07 GHz
3
0.05
26.5
FREQUENCY - GHz
Capacitance = 1000 pF Q = 50 @ 1 MHz
Size: L = .035" W = .035" T = .007"
LOG MAG
< REF = -30 dB
5 dB/DIV
Marker 1
-24.8 dB @ 51 MHz
Marker 2
-30.5 dB @ 1.71 GHz
4
Marker 3
-33.1 dB @ 3.25 GHz
1
2
3
Marker 4
-19.1 dB @ 18.25 GHz
0.05
26.5
FREQUENCY - GHz
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
5
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
Maxi & Maxi+ X7R Dielectrics
PERFORMANCE CURVES
S21 INSERTION LOSS
Capacitance = 220 pF Q = 50 @ 1 MHz
Size: L = .017" W = .017" T = .007"
LOG MAG
< REF = -.02 dB
.10 dB/DIV
Marker 1
.00 dB @ 50 MHz
Marker 2
-.013 dB @ 1.71 GHz
Marker 3
-.022 dB @ 11.33 GHz
3
1
2
Marker 4
-.023 dB @ 18.25 GHz
4
0.05
26.5
FREQUENCY - GHz
Capacitance = 470 pF Q = 50 @ 1 MHz
Size: L = .024" W = .024" T = .007"
LOG MAG
< REF = -.02 dB
.10 dB/DIV
Marker 1
.018 dB @ 50 MHz
Marker 2
-.040 dB @ 6.75 GHz
Marker 3
-.035 dB @ 11.33 GHz
1
4
2
Marker 4
-.078 dB @ 20.36 GHz
3
0.05
26.5
FREQUENCY - GHz
Capacitance = 1000 pF Q = 50 @ 1 MHz
Size: L = .035" W = .035" T = .007"
LOG MAG
< REF = -.02 dB
.10 dB/DIV
Marker 1
.00 dB @ 50 MHz
Marker 2
-.059 dB @ 6.78 GHz
1
Marker 3
-.018 dB @ 11.33 GHz
3
2
Marker 4
-.213 dB @ 20.36 GHz
4
0.05
26.5
FREQUENCY - GHz
6
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
X7S Dielectrics – Code Z
GENERAL INFORMATION
This grain boundary barrier layer (GBBL) system was developed as a replacement for conventional
Z5U/Y5V dielectrics. With X7S temperature characteristics, the Z Series offers not only a significant
improvement over the TCC of these two dielectrics, but does so over a much wider operating range of
-55C to +125°C. Voltage ratings of 50 and 100VDC are available.
The Z Series is offered in a range of five dielectric constants (2,500, 5,000, 9,000, 14,000 and 18,000)
and products are available with & without borders.
CAPACITANCE CHANGE WITH TEMPERATURE
40
Typical Delta Cap (%)
20
X7S
0
-20
-40
Z5U
-60
-80
Sample kits are available
-100
Z Dielectric KIT Catalog # KITSLCZDIESAMPL
includes 10 each:
GH015Z101MA6N, GH025Z221MA6N,
GH035Z471MA6N, GH045Z102MA6N
Samples of individual P/N's are also available
Y5V
-60
-40
-20
0
60
20
40
Temperature (°C)
80
100
120
140
DIMENSIONS: inches (millimeters)
(L) Length
(T) Thickness
(B) Border
GH/GB01
.015±.005
(.381±.127)
GH/GB02
GH/GB03
GH/GB04
.025±.005
.035±.005
.050±.010
(.635±.127)
(.889±.127)
(1.27±.254)
.007+.002, -.001 (.178+.051, -.025)
.002±.001 (.051±.025)
GH/GB05
.070±.010
(1.78±.254)
GH/GB06
.090±.010
(2.29±.254)
Z DIELECTRIC GH WITHOUT BORDERS
Cap (pF)
Min
Max
20
200
Cap (pF)
Min
Max
35
470
Cap (pF)
Min
Max
80
800
Cap (pF)
Min
Max
150
2000
Cap (pF)
Min
Max
300
3000
Cap (pF)
Min
Max
500
4700
Cap (pF)
Min
Max
140
1800
Cap (pF)
Min
Max
280
2700
Cap (pF)
Min
Max
470
4500
Z DIELECTRIC GB WITH BORDERS
Cap (pF)
Min
Max
20
150
Cap (pF)
Min
Max
30
390
Cap (pF)
Min
Max
70
700
HOW TO ORDER
GH
02
5
Z
102
M
A
6N
Type
Code
Case
Size
Working
Voltage
Code
Dielectric
Code
Capacitance
Capacitance
Tolerance
Code
Termination
Code
Packaging
Code
GH = w/o borders
GB = w/ borders
01
02
03
04
05
06
5 = 50V
1 = 100V
Z = X7S
(k = 2.5K-18K)
EIA Cap
Code in pF
K = ±10%
M = ±20%
Z = +80%
-20%
A = Au
(100 μ-in min)
over
Ti/W (1000 Å nom)
also available
N = Ti/W-Ni-Au
6N = Antistatic
Waffle Pack
Note: GH/GB01 & 02 above replace GH/GB10, 15, 20 & 25 and are slightly different dimensionally. Contact factory for details.
GH/GB03, 04, 05 & 06 replace GH/GB35, 50, 70 & 90 respectively and are dimensionally identical.
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
080421
– microwave single layer ceramic & mos capacitors –
7
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
NP0, Temp Compensating & X7R Dielectrics
GENERAL INFORMATION
In addition to the standard SLC products shown below, KYOCERA AVX is now able to offer
bordered versions in these same dielectric families as detailed on the opposing page utilizing
micron resolution photolithography and etching processes.
With borders precisely defined, these parts will be beneficial in those applications that require
enhanced visual definition during placement and wire bonding. Additionally, bordered devices
have proven effective in reducing susceptibility to conductive epoxy electrode bridging.
Custom designs to meet stringent circuit trace width matching requirements are available
upon request.
GH SERIES: SINGLE LAYER CAPACITORS WITHOUT BORDERS NP0,
TEMPERATURE COMPENSATING & X7R DIELECTRICS
DIMENSIONS: inches (millimeters)
Case Code/Size
Length & Width
Thickness Min/Max
Dielectric
k
A
A
A
4
7
Y
C
C
C
14
31
60
200
420
650
1100
2000
4200
GH16
.015±.003 (.381±.076)
Min
0.06
0.1
0.3
0.8
1.5
2.7
3.3
6.2
13
Cap (pF)
Max
0.2
0.4
1
3
5.6
10
15
29
60
Tol*
A
A
B
C
J
K
K
K
K
GH18
GH26
.018±.003 (.457±.076)
.025±.005 (.635±.127)
.0045/.012 (.114/.035)
Cap (pF)
Cap (pF)
Min
Max
Tol*
Min
Max
Tol*
0.08
0.2
A
0.2
0.4
A
0.2
0.5
A
0.4
1
A
0.4
1.1
A
0.8
2
B
1.2
3.6
C
2.4
6.8
C
2.2
6.2
D
4.3
12
D
4.3
11
D
7.5
22
J
6.8
18
J
13
36
J
13
36
J
24
68
J
30
75
J
56
150
J
GH35
.035±.005 (.889±.127)
Min
0.4
0.7
1.5
4.7
8.2
15
27
47
110
Cap (pF)
Max
0.9
2
4.7
13
22
43
75
130
300
Tol*
A
A
B
D
J
J
J
J
J
DIMENSIONS: inches (millimeters)
Case Code/Size
Length & Width
Thickness Min/Max
Dielectric
k
A
A
A
4
7
Y
C
C
C
14
31
60
200
420
650
1100
2000
4200
GH50
.050±.010 (1.27±.254)
Cap (pF)
Min
0.6
1.5
2.7
8.2
15
27
47
82
180
Max
2
4.7
9.1
30
51
100
160
300
680
Tol*
A
B
C
G
G
G
J
J
J
GH70
.070±.010 (1.78±.254)
.0045/.012 (.114/.035)
Cap (pF)
GH90
.090±.010 (2.29±.254)
Min
1.3
3
6.2
20
33
62
100
220
430
Min
2.2
5.1
10
33
56
110
180
330
750
Max
3.9
8.2
16
56
91
180
300
560
1200
Tol*
A
B
D
G
G
G
J
J
J
Cap (pF)
Max
5.6
13
27
82
150
270
470
820
1800
Tol
A
C
G
G
G
G
J
J
J
Note: Tol* - Letter indicates tightest available
8
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
GH/GB Series – SLC's With & Without Borders
NP0, Temp Compensating & X7R Dielectrics
GB SERIES: SINGLE LAYER CAPACITORS WITH BORDERS
NP0, TEMPERATURE COMPENSATING & X7R DIELECTRICS
DIMENSIONS: inches (millimeters)
Case Code/Size
Length & Width
Thickness Min/Max
(B) Border
Dielectric
k
A
A
A
4
7
Y
C
C
C
14
31
60
200
420
650
1100
2000
4200
GB15
.015±.002 (.381±.051)
Min
0.06
0.1
0.3
0.9
1.5
2.7
4.7
9.1
20
Cap (pF)
Max
0.1
0.2
0.4
1.3
2.4
4.7
7.5
13
33
Tol*
A
A
B
D
D
M
M
M
M
GB20
GB25
.020±.002 (.508±.051)
.025±.002 (.635±.051)
.0045/.012 (.114/.035)
.002+.002,-.001 (.051+.051,-.025)
Cap (pF)
Cap (pF)
Min
Max
Tol*
Min
Max
Tol*
0.1
0.2
A
0.2
0.3
A
0.3
0.4
B
0.4
0.7
B
0.5
0.8
C
0.8
1.3
C
1.5
2.7
D
2.7
4.7
M
2.7
4.7
M
4.7
8.2
M
4.7
9.1
M
8.2
15
M
8.2
15
M
15
24
M
16
27
M
27
47
M
36
62
M
56
100
M
GB30
.030±.002 (.762±.051)
Min
0.3
0.6
1.2
3.9
6.8
12
22
39
91
Cap (pF)
Max
0.4
1
2
6.8
12
22
36
68
150
Tol*
A
B
C
K
K
K
K
K
K
DIMENSIONS: inches (millimeters)
Case Code/Size
Length & Width
Thickness Min/Max
(B) Border
Dielectric
k
A
A
A
4
7
Y
C
C
C
14
31
60
200
420
650
1100
2000
4200
GB35
.035±.002 (.899±.051)
Min
0.4
0.8
1.6
5.1
9.1
18
30
51
120
Cap (pF)
Max
0.6
1.5
3
9.1
16
30
51
91
200
GB40
GB50
.040±.002 (1.016±.051)
.050±.002 (1.270±.051)
.0045/.012 (.114/.035)
.002+.002,-.001 (.051+.051,-.025)
Cap (pF)
Cap (pF)
Tol*
Min
Max
Tol*
Min
Max
Tol
A
0.5
0.9
B
0.8
1.3
B
C
1.1
2
C
1.8
3
C
C
2.2
3.9
C
3.6
6.2
D
K
6.8
13
K
11
20
K
K
12
22
K
20
36
K
K
22
39
K
36
62
K
K
39
68
K
62
110
K
K
68
120
K
110
200
K
K
160
270
K
270
430
K
Note: Tol* - Letter indicates tightest available
HOW TO ORDER
GH
16
5
A
6R8
M
A
6N
Type Code
Case
Code
Working
Voltage
Code
Dielectric
Code
Capacitance
Value
Capacitance
Tolerance
Termination
Code
Packaging
Code
GH = w/o borders
GB = w/ borders
5 = 50WVDC
1 = 100WVDC
A = NP0*
4 = TC
7 = TC
Y = TC
C = X7R
EIA Cap Code in pF
First two digits =
significant figures or
“R” for decimal place.
Third digit = number
of zeros or after “R”
significant figures.
A = ±0.05pF
B = ±0.1pF
C = ±0.25pF
D = ±0.5pF
G = ±2%
J = ±5%
K = ±10%
M = ±20%
N = Ti/W-Ni-Au
Au (100μ-in min)
over
Ni (1500Å nom)
over
Ti/W (500Å nom)
6N = Antistatic
Waffle Pack
NOTE: A Dielectric is not RoHS Compliant
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
9
Microwave SLCs
GHB/GH** Series
Dual-Cap & Multi-Cap Arrays
GENERAL INFORMATION
Multi-Cap Arrays can be manufactured with 2, 3, 4, 5 or 6 capacitors on one single layer ceramic
substrate. These arrays are available in our Maxi and Maxi+ family of GBBL dielectrics and offer a broad
range of capacitance values as detailed in the accompanying tables.
These arrays have advantages over single components in the form of smaller overall size, reduced
handling and lower average unit costs. They are, therefore, a good choice for broad-band bypass
applications where circuit board layouts can utilize these configurations.
The designs, shown along with the range of maximum capacitance values, represent typical parts. Since
most applications require specific form factors, custom designs on all multi-cap arrays are available to
meet individual customer requirements and are offered with quick turn around. No charge samples are
generally shipped within two weeks of the design sign-off.
Both standard and custom designs are available with borders for those applications where conductive epoxy run up exposes the parts to the
possibility of shorting. Maximum capacitance per pad for bordered devices will be necessarily somewhat lower than shown on the adjacent
page.
2 and 3 cap arrays can be designed with different capacitance values per pad in circuit designs where identical values pad-to-pad are, for one
reason or another, not altogether suitable.
Additionally, the dual-caps are available to match micro strip widths as dictated by circuit considerations. When mounted with the individual
pads down, the need for wire bonding is eliminated. The maximum capacitance values indicated on the typical designs shown represent
capacitance per pad. Mounted with both pads down puts two capacitors in series. The effective series capacitance (CEff), can be determined
by 1/CEff = 1/C1 + 1/C2.
Contact the factory or your local KYOCERA AVX representative.
HOW TO ORDER
GH
B
5
5
8
102
P
A
6N
Type Code
Packaging Code
Array Code
6N = Antistatic
Waffle Pack
B = 2
C = 3
D = 4
E = 5
F = 8
Termination Code
A = Au (100 μ-in min)
over Ti/W
(1000 Å nom) also
available
N = Ti/W-Ni-Au
Size Code
2 = .020" W 4 = .040" W
Y = .025" W 5 = .050" W
3 = .030" W S = Special
Cap Tolerance
Working Voltage Code
P = +100% -0%
Z = +80% -20%
Dual-Caps
M = ±20% available
5 = 50VDC
Dielectric Code
8 = Maxi
9 = Maxi+
Cap Code
EIA Cap Code in pF
DUAL-CAP
MULTI-CAP
T
W
G
G
W
T
L
L
10
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
060121
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
GHB/GH** Series
Dual-Cap & Multi-Cap Arrays
GHB SERIES: DUAL CAP SINGLE LAYER CAPACITORS
DIMENSIONS: inches (millimeters)
GHB2
GHBY
(L) Length
.050±.010
(1.27±.254)
(W) Width
.020+.000,-.003
(.508+.000,-.076)
GHB3
GHB4
GHB5
.040+.000,-.003
(1.02+.000,-.076)
.050+.000,-.003
(1.27+.000,-.076)
.080±.010
(2.03±.254)
.025+.000,-.003
(.635+.000,-.076)
.030+.000,-.003
(.762+.000,-.076)
(T) Thickness
.008±.002
(.203±.051)
(G) Gap
.005 min/.010 max (.127/.254)
Cap/Pad (pF)
Cap/Pad (pF)
Cap/Pad (pF)
Cap/Pad (pF)
Cap/Pad (pF)
Dielectric
Min
Max
Min
Max
Min
Max
Min
Max
Min
Z
25
220
54
500
65
600
88
770
100
Max
960
Maxi
200
350
430
780
520
940
700
1200
870
1500
Maxi+
270
450
600
1000
730
1200
980
1500
1200
1900
GH-SERIES: MULTI-CAP ARRAY SINGLE LAYER CAPACITORS
DIMENSIONS: inches (millimeters)
GH*2
GH*Y
GH*3
Length - Code (C) - 3 Caps
.065±.010
(1.65±.254)
Length - Code (D) - 4 Caps
.090±.010
(2.29±.254)
Length - Code (E) - 5 Caps
.115±.010
(2.92±.254)
Length - Code (F) - 6 Caps
.140±.010
(3.56±.254)
.020±.005
(.508±.127)
(W) Width
.025±.005
(.635±.127)
GH*6
.030±.005 .040±.005
(.762±.127) (1.02±.127)
.008±.002
(.203±.051)
(T) Thickness
Pad Size (nominal)
.020x.015
(.508x.381)
(G) Gap (All Arrays)
.025x.015
(.635x.381)
.030x.015
.040x.015
(.762x.381) (1.02x.381)
.005 min/.010 max (.127/.254)
Cap/Pad (pF)
Cap/Pad (pF)
Cap/Pad (pF)
Cap/Pad (pF)
Dielectric
Min
Max
Min
Max
Min
Max
Min
Z
20
120
25
150
30
180
40
Max
250
Maxi
140
200
170
250
210
300
280
400
Maxi+
200
300
250
370
300
450
400
600
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
11
Microwave SLCs
ULTRA MAXI Series
The Ultra Maxi Series is the latest addition to the KYOCERA AVX family of proprietary high
k, inter-granular barrier layer dielectic systems. This series is similar to our Maxi & Maxi+
product offerings, but with the notable difference that the dielectric constant has been
increased to 60,000 - double the previous high for our industry leading GBBL formulations.
These new Single Layer Ceramic Capacitors, with X7R TCC and rated at 25VDC (-55°C
thru +125°C), set a new standard for circuit miniturization. On average, the required board
mounting area will be reduced by approximately two-thirds when compared to an equivalent
capacitance value for our Maxi+ series. The Ultra Maxi series offers an ideal solution for
broadband bypass applications where high performance and the smallest footprint are the
primary considerations.
The Ultra Maxi Series is RoHS compliant - as are all KYOCERA AVX SLC products.
Terminations (Au over Ti/W) provide an excellent wire bonding surface and are compatible
with conductive epoxy and Au/Sn eutectic solder attach.
Samples and custom configurations are available on request.
inches (millimeters)
Style
GD10
GD15
GD20
GD25
GD30
GD35
GD40
GD45
GD50
GD55
Length x Width
Capacitance (pF)
Min
Max
±.003" (0.076)
.010 x .010 (.254 x .254)
200
300
.015 x .015 (.381 x .381)
300
600
.020 x .020 (.508 x .508)
550
1000
.025 x .025 (.635 x .635)
900
1500
.030 x .030 (.762 x .762)
1400
2000
.035 x .035 (.889 x .889)
1900
2700
.040 x .040 (1.016 x 1.016)
2600
3500
.045 x .045 (1.143 x 1.143)
3300
4400
.050 x .050 (1.270 x 1.270)
4200
5400
.055 x .055 (1.397 x1.397)
5100
6500
Thickness: .0065±.001 (.165±.025)
Sample kits are available
ULTRA MAXI KIT Catalog # KITSLCK60KSAMPL
includes 10 each:
GD1030301ZAW, GD1530601ZAW,
GD2030102ZAW, GD3030202ZAW
Capacitance Change with Temperature
8
6
Typical Delta Cap (%)
4
2
0
-2
-4
-6
-8
-70
HOW TO ORDER
12
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110 120 130 140
Temperature (°C)
GD
20
3
Type
Code
L&W (mils)
Rated
Voltage
3 = 25 VDC
0
102
Z
A
6N
Dielectric
Capacitance
Capacitance
Tolerance
Termination
Packaging
0 = Ultra Maxi
(k = 60,000)
EIA Cap
Code in pF
M = ±20%
Z = +80 -20%
Au (100 μ-in)
over
Ti/W (1000Å)
Antistatic
Waffle Pack
(400 per)
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
Introduction to Microwave Capacitors
Typical Microwave Circuit Applications
The top side of the capacitor should be completely metallized so
that the bond wire from the FET to the edge of the capacitor is
minimized.
Microwave MLC, SLC, or Thin-Film capacitor applications in MIC
circuits can be grouped into the following categories:
The height of the capacitor must be less than or equal to the height
of the FET, usually about 0.005 inches. If the capacitor is higher than
the FET, the capacitor will interfere with the bonding tool when wire
bonding to the FET.
• DC Block (in series with an MIC transmission line)
• RF Bypass (in shunt with transmission lines)
• Source Bypass (in shunt with active device)
Impedance Matching
• Impedance Matching
The impedance matching application is to use the chip capacitor to
provide the required reactance at a specific point in the circuit.
This chapter discusses these applications and the performance
parameters of microwave capacitors affecting these applications.
This is usually the most critical application in terms of the capacitor
maintaining a tight tolerance over temperature and from unit-to-unit.
DC Block
In the DC block application, the chip capacitor is placed in series
with the transmission line to prevent the DC voltage from one circuit
from affecting another circuit.
The other applications only require that the capacitance for the DC
block and RF bypass maintains a low reactance and the tolerance
can be as much as ±50%. Whereas the impedance matching function
often requires ±1% tolerance.
The capacitance is chosen so that the reactance is only a fraction of
an ohm at the lowest microwave frequency of interest.
In general, microwave capacitors should have the following
properties:
The largest value capacitor is used as long as the self-resonant
frequency is still much higher than the highest frequency of interest.
• Low-loss
RF Bypass
• Operate very much below the self-resonant frequency
The RF bypass application is used to effectively short out the RF to
ground. The capacitor value is also picked to be as large as possible
without approaching the self-resonance of the capacitor.
• The power handling capability should be commensurate with the
expected power performance of the circuit
Source Bypass
• Low variation of capacitance over temperature
• Capable of wire bonding and gap welding
The source bypass application is the same as the RF bypass except
the capacitor is used in conjunction with an active device.
• Low unit-to-unit variations in capacitance
• Low dimensional variations from unit-to-unit
In this application the chip capacitor is butted up to the source
of the microwave FET device mounted on the MIC circuit. This is
done to minimize the length of the wire bond from the source of
the FET to the capacitor. The shorter the wire bond, the lower the
corresponding inductance.
Typical SLC applications in MIC circuits are shown in:
RFIN
R
D C
C D
SIMPLIFIED RF SPECTRUM
500 MHz
DISTRIBUTED NET
LUMPED NET
C
ELF. VLF. LF
60 cm
COAXIAL
SYSTEMS
3 GHz
WAVEGUIDE
SYSTEMS
10 cm
C D
D
RFOUT
C
R
R
D
MF. HF
VHF
UHF
SHF. EHF
300 KHz
3 MHz
30 MHz
300 MHz
3 GHz
30 GHz
1 km
100 m
10 m
1m
10 cm
1 cm
AM
BROADCAST
FM
BROADCAST
BIAS
Figure 2. Typical MIC Microwave Attenuator Hybrid with SLC’s.
“C” indicates SLC locations.
SATELLITE
(COMMERCIAL)
Figure 1
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
13
Microwave SLCs
Introduction to Microwave Capacitors
Microwave Parameters
Scattering Parameters
It can be shown that return loss can be related to the reflection
coefficient and VSWR:
Generally, transmission and reflections coefficient measurements
completely characterize any black box or network. Transmission
and reflections parameters — attenuation (gain), phase shift, and
complex impedance — can be described in terms of a set of linear
parameters called “scattering” or “s” parameters. Knowing these
characteristic parameters, one can predict the response of cascaded
or parallel networks accurately. Unlike y or h parameters which
require short circuit and open circuit terminations, “s” parameters
are determined with the input and output ports terminated in the
characteristic impedance of the transmission line which is a much
more practical condition to obtain at RF and microwave frequencies.
Eq. 2. RL (dB) = 10 * log (Pinc/Pref)
= 20 * log (Einc/Eref) = 20 * log (1/Rho)
Eq. 3. Rho = (VSWR - 1)/(VSWR + 1)
Eq. 4. VSWR = (1 + Rho)/(1 - Rho)
where Rho = reflection coefficient
RL = return loss
Pinc = power incident
Pref = power reflected
Einc = voltage incident
Eref = voltage reflected
VSWR = voltage standing wave ratio
To summarize, “s” parameters are more useful at microwave
frequencies because:
By the above equation, when the reflection coefficient is 1, the
return loss is zero. In this case, no signal is lost and all the signal
incident upon the discontinuity was returned to the source. As the
reflection coefficient approaches zero, the return loss approaches
infinity. That is, the more perfect the load, the less the reflection
from that load.
1. Equipment to measure total voltage and total currents at the
ports of the networks is not readily available.
2. Short and open circuits are difficult to achieve over a broad band
of frequencies because of lead inductance and capacitance.
Furthermore, these measurements typically require tuning
stubs separately adjusted at each frequency to reflect short
and open circuits to the device terminals, and this makes the
process inconvenient and tedious.
The return loss can be improved by an attenuator.
Assume that we connect a perfectly matched 3 dB attenuator into a
short circuit as shown in Figure 3.
3. Active devices such as transistors and negative resistance
diodes are very often not short- or open-circuit stable.
There are four scattering parameters for a two-port network: S11,
S12, S21, and S22.
PINC
S11 is the reflection coefficient at the input port with the output
port terminated in a 50 ohm load.
SHORT CIRCUIT
PREF
S12 is the reverse transmission coefficient in a 50 ohm system.
3 dB ATTEN
S21 is the forward transmission coefficient in a 50 ohm system.
S22 is the reflection coefficient at the output port with the input
port terminated into a 50 ohm load.
The reflection coefficients can be directly related to the impedance
of the device by the equation:
Eq.1. ZIN/ZO = (1 + S11)/(1 - S11)
where ZIN= input impedance
ZO = characteristic impedance of
the transmission line
This equation also defines the Smith Chart.
Return Loss
Return loss is the ratio of the incident power to the reflected power
at a point on the transmission line and is expressed in decibels.
The reflected power from a discontinuity is expressed as a certain
number of decibels below the incident power upon the discontinuity.
Figure 3
P
REF
____
= -6 dB
PINC
The indicated 100 mw is decreased to 50 mw at the output of the
3 dB attenuator. This 50 mw is reflected from the short circuit back
through the attenuator in the reverse direction and one-half of this
reflected power is lost in the 3 dB attenuator. The reflected power
at the input is 25 mw. Notice the return loss is equal to twice the
attenuation because it is the “round trip” loss. This example shows
that VSWR is decreased when attenuation exists on a transmission
line and also that a high VSWR can be decreased by placing an
attenuator in the line.
Mismatch Loss
Mismatch loss is a measure of power loss caused by reflection. It
is the ratio of incident power to the difference between incident and
reflected power and is expressed in dBs as follows:
Eq. 5. Mismatch loss (dB) = 10 * log
[Pinc/(Pinc - Pref)]
= 10 * log
[1/(1-Rho = 2)]
14
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
Introduction to Microwave Capacitors
Microwave Parameters
(1)
N
SWEEP
GENERATOR
(2) GPC-7
SWR
AUTOTESTING
(3)
SMA
GPC-7
TO SMA
(4)
DUT
SMA
(5) GPC-7
GPC-7
TO SMA
(6) GPC-7
ATTEN
(7)
DET
(8)
SCALAR
ANALYZER
REFLECTION
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Wiltron 6647A 10MHz - 18GHz sweepers
Wiltron 560-97-A50
OSM 2082-2700-00
Device under test
OSM 2082-2700-00
OSM 7082-6193-10
Wiltron 560-7A50
Test
set-up for:
______________
(1) Insertion loss
(2) VSWR
Figure 4
The mismatch loss for various values of VSWR is tabulated as
follows:
VSWR
1.00
1.20
1.40
1.50
1.70
2.00
2.50
3.00
Table I
TRANSMISSION
In using the scalar network analyzer it is a temptation to normalize
the amplitude response regardless what the actual response is
during calibration. It is advisable to eliminate the amplitude ripple
first before normalizing the scalar analyzer. One way is to make
use of the fact that VSWRs can be improved by the use of matched
attenuators. Often, 10 dB attenuators are placed before and after the
DUT to provide a minimum of 20 dB return loss which corresponds
to source and load VSWRs of less than 1.20:1. This will reduce the
uncertainties due to mismatch losses to less than 0.02 dB.
Mismatch Loss
0.00 dB
0.04 dB
0.12 dB
0.18 dB
0.30 dB
0.51 dB
0.88 dB
1.25 dB
Return Loss Measurement
The return loss is measured by the following method: The test port
is terminated by a short circuit so that all the incident power is
reflected. A detector on the bridge measures this power and this
power is used as the reference for the incident power. The test
port is then terminated by the DUT and the reflected power now
measured. The difference between the power levels is the return
loss.
Insertion Loss Measurement
Insertion loss is measured by the substitution method. The insertion
loss of the measurement system is used as a reference. Then the
DUT (Device Under Test) is inserted into the setup and the new
insertion loss is measured. The difference between the two losses
is the insertion loss of the DUT.
The insertion loss is measured using the test setup as shown in
Figure 5.
SWR BRIDGE
In order to accurately measure the insertion loss, source VSWR and
load VSWR must be extremely Iow. It is assumed during calibration
(loss of the measurement system with the DUT removed from the
test setup) that the VSWR of the generator and the load does not
contribute any mismatch losses. As discussed in the section on
mismatch loss, any VSWR above 1.2:1 may cause a minimum error
of 0.04 dB. In addition, the two VSWRs may be additive or subtractive
depending on the phasing of the reflections. For example, source
and load VSWRs of 1.2:1 can add to create an error of 0.08 dB. The
mismatches usually exhibit themselves as amplitude ripple as a
function of frequency. It is important when measuring low insertion
losses that precautions are taken to ensure low source and load
VSWRs and to keep the mismatch losses due to the two VSWRs to
a small fraction of the expected insertion loss of the DUT.
INCIDENT
POWER
DETECTOR
Figure 5. Return Loss Measurement:
Establishing a Reference
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
15
Microwave SLCs
Introduction to Microwave Capacitors
Microwave Parameters
SWR BRIDGE
Note that the insertion loss and return loss can be measured
simultaneously by using the dual trace feature of the Wiltron Scalar
Analyzer. Furthermore, the two measurements can be done by using
a controller such as the HP85 computer for semi-automatic testing.
INCIDENT
INPUT
REFLECTED
DUT
50 OHM
TERMINATION
The calibration for 0 dB return loss can be improved by averaging
the short circuit and open circuit reflected powers. Since the phase
difference is 180 degrees, the average closely approximates the
actual full reflection.
Decibels
DETECTOR
DUT IN PLACE
The decibel, abbreviated “dB,” is one-tenth of the international
transmission unit known as the “bel.” The origin of the bel is the
logarithm to the base 10 of the power ratio. It is the power to which
the number 10 must be raised in order to equal the given number.
The number 10 is raised to the second power, or squared, in order
to get 100. Therefore, the log of 100 is 2.
Figure 6
• All incident power is reflected at the short circuit.
• The detector measures the reflected power.
• An SWR bridge usually has a directivity of 35 to 40 dB. In
other words, only a minute fraction of the incident power
reaches the detector (the dotted line path) that is not
reflected off the short circuit.
• The DUT is substituted for the short circuit and the opposite
port is terminated by a matched termination (50 ohms).
• The reflected power depends on the DUT and is sensed by
the detector.
• The return loss is the difference between this reflected
power and that measured with a reference short circuit.
• A significant improvement in calibrating a 0 dB return loss
reference by averaging the short circuit and open circuit
reflected powers.
• The dotted line in the figure below shows the reflections due
to an open circuit.
• The solid line in the figure below shows the reflections due
to a short circuit.
• Since the phase difference between short circuit and open
circuit is 180 degrees.
• By taking the average between these two voltages, the
actual full reflection is very closely approximated.
The decibel is expressed mathematically by the equation:
Eq. 6 dB = 10 * log (P2/P1)
P2 = larger power
P1 = lower power
The use of log tables can be avoided in practical applications where
exact values of the power are not required. One only needs to know
that a factor of 2 is equal to 3 dB and a factor of 10 is equal to
10 dB and the rest of the conversions are derived from these
two relationships. The use of dBs reduces multiplication into an
addition. For example:
3dB =
2
6dB = 2 x 2
=
4
9dB = 2 x 2 x 2 =
8
10dB =
10
20dB = 100
The technique is based on the fact that 3, 6, and/or 9 dB can be
added or subtracted (in some combination) to any decibel value.
Adding or subtracting 10 to a decibel value simply multiplies or
divides the number by ten. Examples:
1. 17dB = 20dB - 3dB
20dB is 10dB + 10dB or is equal to 100.
3dB is equal to 2
Therefore, 20 dB - 3dB = 100/2 = 50
AVERAGING THE SHORT CIRCUIT AND OPEN CIRCUIT
REFERENCES FOR HIGHER ACCURACY
SHORT
OPEN
E0
A
B
C
C1
2. 36dB = 30dB + 6dB
1000 x 4 = 4000
Decibel:
B1
The decibel is not a unit of power but merely is a logarithmic
expression of a ratio of two numbers. The unit of power may be
expressed in terms of dBm, where “m” is the unit, meaning above
or below one milliwatt. Since one mw is neither above nor below 1
mw, 1 mw= 0 dBm.
A1
f1
f2
ACTUAL
FULL
REFLECTION
Nepers:
An alternate unit called the neper is defined in terms of the logarithm
to the base “e.” e = 2.718.
PREFERRED REFLECTION CALIBRATION
Figure 7
1 neper = 8.686dB
1dB = 0.1151 neper
16
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available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
Introduction to Microwave Capacitors
Electrical Model
Capacitance
Figures 9 and 10 also show the point of series resonance (LS in
series with C), and parallel resonance (LS in parallel with CP)
Microwave chip capacitors, although closely approximating an
ideal capacitor, nonetheless also contain parasitic elements that
are important at microwave frequencies. The equivalent circuit is
shown below:
C
RS
QP2
RS
INDUCTIVE
LS
LS
RS
P
Z( )
S
RS
CP
CAPACITIVE
Figure 8. Equivalent Circuit of a
Microwave Capacitor
where,
1
___
C
1
___
CP
QP2
RS
Figure 9. SLC Impedance Magnitude vs. Frequency
C = desired capacitance
LS = parasitic series inductance
SERIES RESONANCE
RS = series resistance
j50
j100
j25
CP = parasitic parallel capacitance,
Rp, the parallel resistance is not shown as it is of concern only at dc
and low frequencies.
j150
j10
The primary capacitance, C, is typically determined by measurement
at 1 MHz where the effects of Rs, Ls, and Cp become negligible
compared to the reactance of C. The value of C determined at this
low frequency is also valid at microwave frequencies when the
dielectric constant has a very low variation versus frequency, as is
typical in the modern dielectrics employed in microwave capacitors.
0
j250
10
25
50
PARALLEL
RESONANCE
100 150 250 500
-j10
-j250
-j150
-j100
-j25
-j50
The equivalent impedance of the capacitor at any frequency is:
Eq. 7.
COORDINATES IN OHMS
FREQUENCY IN GHz
Figure 10. SLC Impedance on Smith Chart
Because there is always some parasitic inductance associated with
capacitors, there will be a frequency at which the inductive reactance
will equal that of the capacitor. This is known as the series resonant
frequency (SRF). At the SRF, the capacitor will appear as a small
resistor (RS). The transmission loss through a series mounted
capacitor at its series resonant frequency will be low.
where s = j2πf, f = frequency
Series and Parallel Resonance
At frequencies above the SRF, the capacitor begins to act like an
inductor.
Ideally, the impedance magnitude of a series mounted capacitor will
vary monotonically from infinite at dc to zero at infinite frequency.
However, the parasitics associated with any capacitor result in a
nonideal response.
When used as a DC block, the capacitor will begin to exhibit
gradually higher insertion loss above the SRF. In other words, the
capacitor will cause a high frequency rolloff of its transmission
amplitude response.
Figure 9 shows the magnitude, :Z (F):, as a function of frequency.
Figure 10 shows Z(f) on the Smith Chart, which includes magnitude
and phase.
When used as an RF bypass, as for the source of an FET, the
inductance will cause the FET to become unstable which can cause
oscillations or undesirable effects on the gain response of the FET
amplifier.
Eq. 8. In general, an impedance is represented by Z=R + j X.
The Smith Chart maps the entire impedance half plane for R > 0
into the interior of a unit circle. The Smith Chart is a mapping of the
reflection coefficient, S11, of an impedance. S11 = (Z- ZO) / (Z + ZO).
ZO is a reference impedance, typically 50 ohms, and is in the center
of the chart. The central horizontal axis is for X = O, with R < 50 to
the left of center, and R > 50 to the right of center.
Beyond the SRF, there is a frequency called the parallel resonant
frequency (PRF). This occurs when the reactance of the series
inductor equals that of the parallel capacitor.
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082719
– microwave single layer ceramic & mos capacitors –
17
Microwave SLCs
Introduction to Microwave Capacitors
Electrical Model
Equivalent Series Resistance
At this parallel resonant frequency, the capacitor will appear as a
large resister whose value is RPRF defined as:
The equivalent series resistance is the RS in the electrical model.
At the SRF, the ESR can be readily determined on the Smith Chart
display of the capacitor’s impedance. However, the ESR is not
necessarily constant with frequency and its value is typically
determined by an insertion loss measurement of the capacitor at
the desired frequency.
Eq. 9. RPRF = Rs x QP X QP; where,
The parasitic parallel capacitance is usually very small which results
in a parallel resonant frequency that is much higher than the series
resonance.
The insertion loss is a combination of reflective and absorptive
components. The absorptive component is the part associated
with the value of the ESR (i.e., the loss in RS). Because of the low
values of ESR in microwave capacitors (on the order of 0.01 ohm),
the insertion loss measurement is very difficult to make, but can
be made with a test fixture similar to that shown in Figure 11, but
with the input and output 50 ohm impedances transformed down
to some more convenient impedance level, Rref, to obtain a more
accurate measurement.
For capacitor usage in RF impedance matching and tuning
applications, the maximum practical frequency for use is up to 0.5
times the SRF.
For DC filtering and RF shorting applications, best performance is
obtained near the SRF.
At frequencies above the SRF, but below the PRF, the SLC can be
used as a low loss inductor with a built-in DC block for bypassing
and decoupling.
When used as a DC block in the transmission line test fixture, the
forward transmission coefficient, S21, and the input reflection
coefficient, S11, can be measured to determine:
The series resonant frequency (SRF) of an SLC can be measured by
mounting the capacitor in series on a 50 ohm transmission line as
shown in Figure 11.
Eq. 10. Dissipative Loss.
DL=(1-:S11:^2)/(:S21:^2)
CHIP CAPACITOR
Eq. 11. Reflection Loss.
RL=(1-:S11:^2) where S11 and S21 are expressed as
complex phasors.
From the dissipative loss, DL, the ESR can be determined as:
Eq. 12. ESR = Rref * [1 - SQRT(DL)]/[1 + SQRT(DL)]
50 ohm
LINE
The ESR typically increases with operating temperature and selfheating under high power. This increase can be seen directly in the
lab by measuring the insertion loss of the capacitor as a function of
temperature.
50 ohm
LINE
A low ESR is especially necessary in SLC’s when used in series
with transistors in low noise amplifiers, high gain amplifiers, or
high power amplifiers. For example, an ESR of 1 ohm in series
with a base input impedance of 1 ohm would result in a serious
compromise in ampIifier gain and noise figure by up to 3 dB.
Figure 11
At its series resonant frequency (SRF), the SLC will appear as a
small resistance. This measurement can be performed with a vector
network analyzer such as the Hewlett Packard 8510. The SRF is at
the frequency for which the phase of the input reflection coefficient,
S11, is crossing the real axis on the Smith Chart at 180 degrees.
Power Rating
The RF power rating of chip capacitors is dependent on:
• Thermal Breakdown
• Voltage Breakdown
The resonant frequency will be lowered by the inductance associated
with the bonding attachment to the capacitor (i.e., bonding wires,
ribbons, leads, etc.). The actual resonant frequency of the capacitor
by itself can be determined by taking out the effects of the bonding
attachment inductance. Using the low frequency measurements
of the primary capacitance alone, the inductance of the capacitor
can be derived from the resonant frequency. With KYOCERA AVX
SLC’s, the inductance is low enough so that the practical operating
frequencies achieved can be beyond 20 GHz.
18
Thermal Breakdown
Thermal breakdown is self-heating caused by RF power dissipated
in the capacitor.
If the resultant heat generated is greater than what can be conducted
away through the leads or other means of heat sinking, the capacitor
temperature will rise.
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082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
Introduction to Microwave Capacitors
Electrical Model
Dielectric Constant Measurement at
Microwave Frequencies
As the capacitor temperature increases, the dissipation factor and
ESR of the capacitor also increase which creates a thermal runaway
situation.
The measurement of dielectric constants at low frequencies is
easily done by measuring the capacitance of a substrate of known
dimensions and calculating the dielectric constant.
The small signal insertion loss is used to determine the percentage
of power which is dissipated in the capacitor.
For instance, if the insertion loss is:
The resonance method is used in measuring dielectric constants
at microwave frequencies of metallized ceramic substrates. This
is based on the model of the high dielectric constant substrate
as a parallel plate dielectrically loaded waveguide resonator. By
observing the resonant frequencies and knowing the dimensions
of the substrate, the dielectric constant is calculated by fitting
the resonances into a table of expected fundamental and higher
order modes. This method can be measured by connecting the
corners of the substrates to the center conductors of either an
APC-7 or Type N connector. The test setup is the same as for
insertion loss measurements. This method as described in the
literature for an alumina substrate with a dielectric constant of
approximately 10 and a substrate height of 0.025 inches can be
measured to an accuracy of 2%. The Napoli-Hughes Method uses
an open circuit assumption for the unmetallized edges which can
be radiative. This inaccuracy is reduced if thinner substrates or if
higher dielectric constant substrates are used which will tend to
reduce radiation. Higher accuracy can be achieved by metallizing
all six sides of the substrate except for the corners where the RF
is coupled to the substrate. This method as reported by Howell
provided more consistent results.
0.01 dB then .2% of the incident power is lost as heat
0.10 dB then 2% of the incident power is lost as heat
1.00 dB then 20% of the incident power is lost as heat
The capacitor will heat up according to the amount of power
dissipated in the capacitor and the heat sinking provided.
Even very low ESR, 0.01 ohm at 1 GHz, can be significant when
passing power through a series mounted capacitor into a typically
low impedance bipolar transistor base input with an input impedance
of only 1 ohm. If 1% of 10 watts is dissipated in the capacitor, this
100 milliwatt of power causes a very large increase in the capacitor
temperature dependent on its heat sinking in the MIC circuit.
Voltage Breakdown
The voltage breakdown also limits the maximum power handling
capability of the capacitor.
The voltage breakdown properties of the capacitors is dependent
on the following:
• dielectric material
• voids in the material
• form factor
• separation of the electrodes
Most microwave capacitors have a DC voltage rating of 50 VDC. This
is much greater than typical DC voltages of 3 to 15 volts present on
an MIC circuit.
m=2
2L
___
f
W 0
2f0
m=1
f0
=
0
FROM
AUTO
SWEEP
GENERATOR TESTER
DETECTOR
SCALAR
ANALYZER
m
L
___
f
W 0
n=1
2
3
4
Figure 12
Dispersion Curve of a Rectangular Resonator
Figure 13
Test Configuration for Resonance Measurements
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082719
– microwave single layer ceramic & mos capacitors –
19
Microwave SLCs
Introduction to Microwave Capacitors
Transmission Lines
Propagation Constant and
Characteristic Impedance
Standing Waves
The incident waves of voltage and current decrease in magnitude
and vary in phase as one goes toward the receiving end of the
transmission line which has losses. The propagation constant is a
measure of the phase shift and attenuation along the line.
An incident wave will not be reflected if the transmission line is
terminated in either matched load or if the transmission line is
infinitely long. Otherwise, reflected waves will be present. In other
words, any impedance will cause reflections.
Standing waves on the lossless transmission line:
• attenuation per unit length of line is called the attenuation
constant. (dB or nepers per unit length)
Let us consider the case of a lossless transmission line terminated
in a short line. In this case all of the incident wave will be reflected.
See Figure 15.
• phase constant, phase shift per unit length. (radians per unit
length)
The dotted sine wave to the right of the short circuit in the diagram
indicates the position and distance the wave would have traveled
in the absence of the short circuit. With the short circuit placed at
X, the wave travels the same distance back toward the generator.
In order to satisfy the boundary conditions, the voltage at the short
circuit must be zero at all times. This is accomplished by a reflected
wave which is equal in magnitude and reversed in polarity (shown
by the superimposed reflected wave and the resultant total voltage
on the line). Note that the total voltage is twice the amplitude of the
incident voltage at a quarter wavelength back toward the generator
and the total voltage is zero at one-half wave-length from the short.
• angular frequency, 2 * pi * f
(R+jwL) - complex series impedance per unit length of line. (G+jwC)
- complex shunt admittance per unit length of line.
Eq. 13. Z0 for lossless case:
WAVE
2E1
CIRCUIT
X
D
E1
1
3
10
2
Ei
2
3
RESULTANT
(a)
DISTRIBUTED PARAMETER MODEL
OF A SECTION OF TRANSMISSION LINES:
1
SHORT
E1
11
r x
6
3
2
5
l x
g x
2
4
4
3
c x
1
Er
(b)
RESULTANT
3
12
2
SHORT
x
4
2Ei
where G = Conductance per unit length
R = Resistance per unit length
C = Capacitance per unit length
L = Inductance per unit length
X = Incremental length
2
4
3
(c)
7
1
7
6
5
4
3
2
2
3
4
5
6
6
5
4
3
2
7
1
(d)
SHORT
1
Figure 15
2
3
4
5
6
1
PURE TRAVELING WAVE
V
+
(e)
AMPLITUDE
Figure 14
X
-
This figure shows generation of standing waves on a shorted
transmission line. Dotted lines to the right of the short circuit
represent the distance the wave would have traveled in absence of
the short. Dotted vectors represent the reflected wave. The heavy
solid line represents the vector sum of the incident and refected
waves. (d) and (e) represent instantaneous voltages and currents
at different intervals of time.
20
I
7
DISTANCE ALONG LINE
V = Instantaneous voltage
I = Instantaneous current
Pure traveling waves: V & I in the lossless case are in phase.
V & I also reverse polarity every half wavelength.
Figure 16
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082719
– microwave single layer ceramic & mos capacitors –
Microwave SLCs
Introduction to Microwave Capacitors
Transmission Lines
Open Circuit:
FIELD ORIENTATION OF A COAXIAL LINE
E
I
At a distance of one-quarter wavelength from the short, the voltage
is found to be twice the amplitude of the incident voltage, which
is equivalent to an open circuit. Therefore, this same distribution
would be obtained if an open circuit were placed a quarter
wavelength from the short. In the case the first node is located a
quarter wavelength from the open and the first antinode is right as
the open. The node-to-node spacing remains half wavelength as is
the antinode-to-antinode spacing.
H
V• ±
DIRECTION OF PROPAGATION
Figure 17
Voltage Standing Wave Ratio:
TWO
WIRE
RECTANGULAR
WAVEGUIDE
MICROSTRIP
RIDGED
WAVEGUIDE
The voltage standing wave ratio is defined as the ratio of the
maximum voltage to the minimum voltage on a transmission line.
This ratio is most frequently referred to as VSWR (Viswar).
COAXIAL
Eq. 14.
CIRCULAR
WAVEGUIDE
CROSS SECTIONAL CONFIGURATIONS OF
VARIOUS TYPES OF GUIDING STRUCTURES
where Rho = reflective coefficient
If the transmission line is terminated in a short or open circuit,
the reflected voltage, Er, is equal to the incident voltage, Ei. From
the above equation the reflection coefficient is 1.0, and the VSWR
is infinite. If a matched termination is connected to the line, the
reflected wave is zero, the reflection coefficient is zero, and the
VSWR is zero.
Figure 18
The total voltage pattern is called a standing wave. Standing waves
exist as the result of two waves of the same frequency traveling in
opposite directions on a transmission line.
The total voltage at any instant has a sine wave distribution along
the line with zero voltage at the short and zero points at half wave
intervals from the short circuit. The points of zero voltages are
called voltage nodes and the points of maximum voltage halfway
between these nodes are called antinodes.
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082719
– microwave single layer ceramic & mos capacitors –
21
Microwave SLCs
Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
Microwave Integrated Circuit Hybrids
A Microwave Integrated Circuit Hybrid (MIC) is a microwave circuit
that uses integrated circuit production techniques involving such
factors as thin or thick films, substrates, dielectrics, conductors,
resistors, and microstrip lines, to build passive assemblies on
a dielectric. Active elements such as microwave diodes and
transistors are usually added after photo resist, masking, etching,
and deposition processes have been completed. MICs usually
are enclosed as shielded microstrip to prevent electromagnetic
interference with other components or systems. This section will
discuss some of the important characteristics of MICs, such as:
• Dielectric Constant: Increase of the dielectric constant of the
substrate will decrease the ZO of the microstrip line.
Table II shows a brief listing of substrate properties.
Table II
Material
MIC Substrates:
For the current discussion we are most interested in the higher
microwave frequencies. The MIC circuit design requires a uniform
and predictable substrate characteristic. Several types of substrates
in common usage are: alumina, sapphire, quartz, and beryllium
oxide. Key requirements for a MIC substrate are that it have:
Low dielectric loss
Uniform dielectric constant
Smooth finish
Low expansion coefficient
Beryllium
Oxide
3.8
6.6
0.0001
0.0001
0.01
2.5
Eq. 15. ZO(f) = 377 * H/(W)/Sqrt (Er)
where,
H = height of the substrate
W = width of the microstrip
conductor
Er = dielectric constant of the
substrate
A graph of ZO versus W/H for several values of dielectric constants
is shown below:
1000
STRIP
CONDUCTOR
W
h
Quartz
The dependence of ZO to the above parameters is as shown:
Z0 - MICROSTRIP IMPEDANCE ( )
•
•
•
•
Sapphire
Relative
9.8*
11.7
Dielectric
Constant, Er
Loss Tangent
0.0001
0.0001
at 10 GHz
Thermal
Conductivity
0.3
0.4
K, in W/CM/
Deg. C
*Alumina Er depends on vendor and purity.
• MIC substrates
• MIC metallization
• MIC components
Microstrip employs circuitry that is large compared to the wavelength
of the frequency used with the circuit. For this reason, the etched
metal patterns often are distributed circuits with transmission
lines etched directly onto the MIC substrate. Figure 19 shows the
pertinent dimensional parameters for a microstrip transmission
line.
Alumina
DIELECTRIC
500
400
300
200
2.3
2.55
100
4.8
6.8
50
40
10
30
20
10
5
4
3
2
GROUND PLANE
1
Figure 19. MIC Microstrip Outline
.2
.3 .4 .5
1
2
3 4 5 7.5 10
20
30 40 50
100
MICROSTRIP W/H
The characteristic impedance of the microstrip line is dependent
primarily on the following:
Figure 20
The most popular substrate material is alumina which has a
dielectric constant of between 9.6 and 10.0 depending on the
vendor and the purity. Other substrates are used where the specified
unique properties of the material (beryllia for high power, ferrites for
magnetic properties) are demanded by design.
• Width of the conductor: Increase in the width “W” of the
conductor will decrease the ZO of the microstrip line.
• Height of the substrate: Increase in the height “H” of the
substrate will increase the ZO of the microstrip line.
22
.1
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082719
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Microwave SLCs
Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
MIC Metallization:
Capacitors:
MIC metallization is a thin film of two or more layers of metals. A
base metallization layer is deposited onto the substrate, another
layer may be optionally deposited on top of this, and then a final
gold layer is deposited onto the surface. The base metallization is
chosen for its adhesion to the substrate and for compatibility with
the next layer.
A lumped capacitor can be realized by the parallel gap capacitance
of an area of metallization on the top of the substrate to the ground
plane. Values of capacitance that can be obtained by this method
are usually less than a few picofarads. At microwave frequencies
if the capacitor size in any one dimension begins to approach a
quarter-wavelength, a resonance will occur.
The base metallization is usually lossy at microwave frequencies.
The losses due to this metallization can be kept to a minimum if its
thickness does not exceed one “skin depth” of the metal.
Large values of capacitance can be achieved with a dielectric
constant between the capacitor plates while maintaining the small
size required for MIC circuits.
Skin effect defines a phenomenon at microwave frequencies where
the current travelling along a conductor does not penetrate the
conductor but remains on the surface of the conductor. The “skin
depth” indicates how far the microwave current will penetrate into
the metal. The “skin depth” is smaller as the frequency increases.
Chip capacitors can be fabricated on substrate with a dielectric
constant up to 5000. This higher dielectric constant allows a much
smaller size capacitor for a given capacitance value which is a very
desirable feature both from the real estate aspect and the selfresonance aspect.
By keeping the lossy metallization as thin as possible, more of the
microwave current will propagate in the top metallization gold layer
and loss is minimized.
Resistors:
MIC resistors are often realized by using a resistive base layer on
the MIC substrate metallization, and by etching the proper pattern
to expose the resistive layer in the MIC circuitry.
Typical metallization schemes used in the industry are:
•
•
•
•
•
Chromium-Gold:
Nichrome-Gold:
Chromium-Copper-Gold:
Titanium-Tungsten-Gold:
Others
Cr-Au
NiCr-Au
Cr-Cu-Au
TiW-Au
The exact value of the resistor is determined by:
• resistivity of the resistive base layer, and
• length and width of the resistor.
Thin film resistive base layers are usually the following:
• tantalum nitrite, or
• nickel-chrome (nichrome).
When chip resistors are used, they are mounted and connected in
the same way as the chip capacitors.
MIC Components:
Microstrip has advantages over other microwave circuit topologies
in that active semiconductors and passive components can easily
be incorporated to make active hybrid circuits. It is possible to mix
high and low frequency circuitry to attain a “system-on-a substrate.”
Inductors:
Passive Components:
Inductors are often realized by using narrow etched microstrip lines
which provides inductance on the order of 1 to 5 nanohenrys.
On MIC circuits, the passive components are either distributed or
lumped elements. The distributed components are usually realized
by etched patterns on the substrate metallization. The lumped
components are capacitors, resistors, and inductors; and whenever
possible components are derived by etching them directly on the
MlC metallization thin film. Chip components are used when they
offer advantages such as:
Higher values up to 50 nanohenrys are obtained by etching a round
or square spiral onto the MIC metallization.
Even higher values can be obtained by using wound wire inductors
or chip inductors which are wire coils encased in a ceramic.
Both types of discrete inductors are attached to the circuit by the
same means as the capacitors.
• Component values are beyond that realizable by thin film
techniques on the MIC substrates,
• Smaller size is required,
• High power capability is required.
Capacitors, resistors, and inductors are discussed in the following:
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available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
23
Microwave SLCs
Introduction to Microwave Capacitors
Incorporation of Capacitors into Microwave Integrated Circuit Hybrids
Active components:
For instance, the eutectic temperature for the following alloys are:
The active devices in the MIC circuit can be made of entirely
different materials than the substrates and are usually attached
to the substrates by eutectic soldering or conductive epoxy.
Table III
Typical active devices on MIC circuits are the following:
• GaAs FETs
• Bipolar Transistors
• Schottky Barrier Diodes
• PIN Diodes
• Various other Semiconductors
The active devices can be either in:
Alloy
Gold Germanium
Gold Tin
Eutectic
Temperature
88% Au 12% Ge
80% Au 20% Sn
356°C
280°C
For best results, the eutectic attach is performed under an inert
gas atmosphere, typically nitrogen, to reduce oxidation at high
temperatures. The eutectic must be selected so that the die
attach operations will not interfere with prior soldering operations
and itself will not be disturbed by subsequent process steps. The
metallization should be able to undergo 400°C without any blistering
or other adhesion degradation.
• a plastic or ceramic package with metal leads, or
• chip form.
The packaged devices are commonly used at a lower frequency
range than the chip devices since they exhibit more parasitic circuit
elements that limit their performance at higher frequency.
The advantages of packaged devices are protection of the devices
during transport and mounting, ease of characterization, and ease
of mounting onto the MIC circuit.
2. Epoxy Die Attach
The epoxy die attach method uses silver or gold conductive particles
in an epoxy. The epoxy for chip attach on MIC circuits is a one-part
type which cures at temperatures of from 125°C to 200°C. The
curing time is a function of temperature. A cure time of 30 minutes
at 150°C is a good compromise for high reliability and a reasonable
cure time.
Chip Component Attach:
The methods of attachment of the chip components to the substrate
are usually by:
• eutectic solder die attach, and
• epoxy die attach.
Chip Components Interconnection:
1. Eutectic Die Attach
The chip components are interconnected to the MIC circuit by
means of:
The eutectic die attach method can be used with several alloys.
Eutectic defines the exact alloy combination at which the solidus to
liquidus transition takes place at one particular temperature. Other
combinations have transition states with wider temperature ranges.
24
Eutectic
Composition
• wire bonding, and
• miniature parallel gap welding.
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
A WORLD OF ADVANCED COMPONENTS
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
082719
– microwave single layer ceramic & mos capacitors –
25
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