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1N5711W-7-F

1N5711W-7-F

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOD123

  • 描述:

    肖特基二极管 VR=70V IF=15mA Trr=1ns P=333mW SOD123

  • 数据手册
  • 价格&库存
1N5711W-7-F 数据手册
1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automated Insertion Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) • • • • • • • Case: SOD-123 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Polarity: Cathode Band Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.01 grams (approximate) Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum Forward Current Symbol VRRM VRWM VR VR(RMS) IFM Value Unit 70 V 49 15 V mA Symbol PD RθJA TJ TSTG Value 333 300 -55 to +125 -55 to +150 Unit mW °C/W °C °C Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 2) @TA = 25°C unless otherwise specified Symbol V(BR)R Min 70 Typ ⎯ Forward Voltage Drop VF ⎯ ⎯ Reverse Leakage Current (Note 2) Total Capacitance IR CT ⎯ ⎯ Reverse Recovery Time trr ⎯ Notes: 1. 2. 3. 4. Unit V ⎯ ⎯ Max ⎯ 0.41 1.00 200 2.0 ⎯ 1.0 ns V nA pF Test Condition IR = 10μA IF = 1.0mA IF = 15mA VR = 50V VR = 0V, f = 1.0MHz IF = IR= 5.0mA Irr = 0.1 x IR, RL = 100Ω Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. Halogen and Antimony Free. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 1N5711W Document number: DS11015 Rev. 14 - 2 1 of 3 www.diodes.com July 2008 © Diodes Incorporated 100 IR , INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1N5711W T A = 125ºC TA = 75ºC TA = 25ºC 10 1.0 TA = 0ºC TA = -40ºC 0.1 0 10,000 1,000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 1.8 350 Note 1 300 PD, POWER DISSIPATION (mW) CT, TOTAL CAPACITANCE (pF) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 250 200 150 100 50 0.2 0 0 35 40 20 25 10 15 30 VR, DC REVERSE VOLTAGE (V) Fig. 3 Total Capacitance vs. Reverse Voltage 0 5 Ordering Information 0 25 125 100 50 75 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve 150 (Note 5) Part Number 1N5711W-7-F Notes: 10 20 30 40 50 60 70 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics Case SOD-123 Packaging 3000/Tape and Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 Code J Month Code Jan 1 1999 2000 2001 2002 2003 K L M N P Feb 2 Mar 3 1N5711W Document number: DS11015 Rev. 14 - 2 Apr 4 YM SA SA = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2004 2005 R May 5 S 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 T U V W X Y Z A B C Jun 6 Jul 7 2 of 3 www.diodes.com Aug 8 Sep 9 Oct O Nov N Dec D July 2008 © Diodes Incorporated 1N5711W Package Outline Dimensions C H A B K M L SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 0 8° α All Dimensions in mm Suggested Pad Layout C Dimensions Value (in mm) Z 4.9 G 2.5 X 0.7 Y 1.2 C 3.7 X Y G Z IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 1N5711W Document number: DS11015 Rev. 14 - 2 3 of 3 www.diodes.com July 2008 © Diodes Incorporated
1N5711W-7-F 价格&库存

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1N5711W-7-F
  •  国内价格 香港价格
  • 3000+0.731083000+0.08875
  • 6000+0.690476000+0.08382
  • 15000+0.6295615000+0.07643
  • 30000+0.5889430000+0.07150
  • 75000+0.5280175000+0.06410
  • 150000+0.50770150000+0.06164

库存:0

1N5711W-7-F
  •  国内价格
  • 1+0.26081
  • 30+0.25150
  • 100+0.24218
  • 500+0.22356
  • 1000+0.21424
  • 2000+0.20865

库存:0