PART OBSOLETE - USE FCX718
2DB1424R
PNP SURFACE MOUNT TRANSISTOR
OBSOLETE – PART DISCONTINUED
Features
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Mechanical Data
Epitaxial Planar Die Construction
Complementary NPN Type Available (2DD2150)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
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COLLECTOR
2,4
3 E
C 4
1
BASE
1 B
3
EMITTER
Top View
Maximum Ratings
2 C
TOP VIEW
Device Schematic
Pin Out Configuration
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-20
-20
-6
-5
-3
Unit
V
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-20
-20
-6
-0.1
-0.1
V
V
V
µA
µA
IC = -50µA, IE = 0
IC = -1mA, IB = 0
IE = -50µA, IC = 0
VCB = -20V, IE = 0
VEB = -5V, IC = 0
VCE(SAT)
hFE
180
-0.18
-0.5
390
V
IC = -2A, IB = -0.1A
VCE = -2V, IC = -0.1A
Cobo
28
pF
fT
220
MHz
VCB = -10V, IE = 0,
f = 1MHz
VCE = -2V, IE = 0.1A,
f = 100MHz
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%.
2DB1424R
Document number: DS31329 Rev. 3 - 4
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June 2021
© Diodes Incorporated
2.0
0.8
1.6
-IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
1.0
0.6
0.4
0.2
0
RθJA = 125°C/W
0
25
50
100
125
75
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
1.2
0.8
0.4
0
150
500
0
4
1
2
3
5
-VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.6
VCE = -2V
hFE, DC CURRENT GAIN
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA = 150°C
400
TA = 85°C
300
TA = 25°C
200
TA = -55°C
100
0.5
IC/IB = 20
0.4
0.3
0.2
0.1
1.0
0.8
TA = -55°C
0.6
0.4
0.2
TA = 25°C
TA = 85°C
TA = 150°C
0
0.001
2DB1424R
0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Document number: DS31329 Rev. 3 - 4
10
TA = -55°C
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE(V)
VCE = -2V
TA = 25°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
TA = 150°C
TA = 85°C
0
0.001
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
OBSOLETE – PART DISCONTINUED
2DB1424R
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1.2
1.0
0.8
0.6
0.4
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
0.2
IC/IB = 20
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
June 2021
© Diodes Incorporated
2DB1424R
250
1,000
C, CAPACITANCE (pF)
OBSOLETE – PART DISCONTINUED
200
150
Cibo
100
100
VCE = -2V
f = 100MHz
Cobo
10
0.1
50
Ordering Information
0
10
20 30 40 50 60 70 80 90 100
IE, EMITTER CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
(Note 5)
Part Number
2DB1424R-13
Notes:
0
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Case
SOT89-3L
Packaging
2500/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
P33R = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code 01 - 52
YWW
P33R
Package Outline Dimensions
.
R0
D1
20
0
C
E
H
L
B
e
B1
8°
(4
X)
A
SOT89-3L
Dim Min Max Typ
A
1.40 1.60 1.50
B
0.45 0.55 0.50
B1
0.37 0.47 0.42
C
0.35 0.43 0.38
D
4.40 4.60 4.50
D1
1.50 1.70 1.60
E
2.40 2.60 2.50
e
—
—
1.50
H
3.95 4.25 4.10
L
0.90 1.20 1.05
All Dimensions in mm
D
2DB1424R
Document number: DS31329 Rev. 3 - 4
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June 2021
© Diodes Incorporated
2DB1424R
Suggested Pad Layout
X1
OBSOLETE – PART DISCONTINUED
Y1
X3
X2
Y3
Y2
Dimensions Value (in mm)
X1
1.7
X2
0.9
X3
0.4
Y1
2.7
Y2
1.3
Y3
1.9
C
3.0
C
2DB1424R
Document number: DS31329 Rev. 3 - 4
4 of 5
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June 2021
© Diodes Incorporated
2DB1424R
IMPORTANT NOTICE
OBSOLETE – PART DISCONTINUED
1.
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
www.diodes.com
2DB1424R
Document number: DS31329 Rev. 3 - 4
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June 2021
© Diodes Incorporated
