2DD2656
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
NEW PRODUCT
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1694)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
E
B
Top View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
30
30
6
1
2
Unit
V
V
V
A
A
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
Symbol
Min
Typ
Max
Unit
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
30
6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1
0.1
V
V
V
μA
μA
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
VCE(SAT)
hFE
⎯
270
100
⎯
350
680
mV
⎯
IC = 500mA, IB = 25mA
VCE = 2V, IC = 100mA
Cobo
⎯
5
⎯
pF
fT
⎯
270
⎯
MHz
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
No purposefully added lead.
Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2656
Document number: DS31638 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2656
1.0
0.6
IB = 5mA
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
0.4
0.3
(Note 4)
(Note 3)
0.2
0.1
0
IB = 4mA
0.8
IB = 3mA
IB = 2mA
0.6
IB = 1mA
0.4
0.2
0
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0
25
10,000
1
2
3
4
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
5
1
T A = 85°C
1,000
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
IC/IB = 20
TA = 150°C
TA = 25°C
T A = -55°C
100
0.1
T A = 150°C
TA = 85°C
TA = 25°C
T A = -55°C
VCE = 2V
0.01
0.1
10
0.1
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 2V
1.0
0.8
T A = -55°C
0.6
T A = 25°C
0.4
T A = 85°C
0.2
TA = 150°C
0
0.1
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
2DD2656
Document number: DS31638 Rev. 2 - 2
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
NEW PRODUCT
0.5
1.2
IC /IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
T A = 85°C
0.2
2 of 4
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T A = 150°C
0
0.1
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
December 2008
© Diodes Incorporated
2DD2656
1,000
CAPACITANCE (pF)
100
Cibo
10
Cobo
1
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Ordering Information
(Note 6)
Part Number
2DD2656-7
Notes:
Case
SOT-323
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
RN1
Date Code Key
Year
Code
Month
Code
2008
V
2009
W
Jan
1
Feb
2
YM
NEW PRODUCT
f = 1MHz
2010
X
Mar
3
Apr
4
RN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
J
2DD2656
Document number: DS31638 Rev. 2 - 2
M
D
L
3 of 4
www.diodes.com
SOT-323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
α
All Dimensions in mm
December 2008
© Diodes Incorporated
2DD2656
Suggested Pad Layout
Y
NEW PRODUCT
Z
C
X
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
2DD2656
Document number: DS31638 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
