AH266Z4-AE1

Data Sheet HIGH VOLTAGE HALL EFFECT LATCH General Description The AH266 is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection and two complementary darlington open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits and allows a wide operating supply voltage ranges. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold BOP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below BRP, then causes DO to be turned high (off) and DOB turned low (on). AH266 is available in TO-94 (SIP-4L) package. AH266 Features · · · · · · · · On-Chip Hall Sensor 4V to 30V Supply Voltage 400mA (avg) Output Sink Current Build in Protection Diode for Reverse Power Connecting -20oC to 85oC Operating Temperature Low Profile TO-94 (SIP-4L) Package Build in Over Temperature Protection Function ESD Rating: 300V(Machine Model) Applications · · · · 12V/24V Dual-Coil Brushless DC Motor/Fan Power Supply and Switchboard Communications Facilities Industrial Equipment TO-94 Figure 1. Package Type of AH266 Feb. 2007 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Pin Configuration Z4 Package (TO-94) AH266 4 3 2 1 GND DOB DO VCC Figure 2. Pin Configuration of AH266 (Top View) Pin Description Pin Number 1 2 3 4 Pin Name VCC DO DOB GND Supply voltage Output 1 Output 2 Ground Function Feb. 2007 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Functional Block Diagram VCC 1 2 DO AH266 Regulator Over Temperature Protection 3 Hall Sensor Amplifier Schmitt Trigger Output Driver DOB 4 GND Figure 3. Functional Block Diagram of AH266 Ordering Information AH266 Circuit Type Package Z4: TO-94 (SIP-4L) E1: Lead Free Magnetic Characteristics A: 10 to 70Gauss B: 100Gauss Package TO-94 Temperature Range -20 to 85 oC Part Number AH266Z4-AE1 AH266Z4-BE1 Marking ID AH266Z4-E1 AH266Z4-E1 Packing Type Bulk Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Feb. 2007 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Absolute Maximum Ratings (Note 1) (TA=25oC) Parameter Supply Voltage Reverse Protection Voltage Magnetic Flux Density Continuous Output Current Hold Peak (Start up) Power Dissipation Die to atmosphere Thermal Resistance Die to package case Storage Temperature ESD (Machine Model) PD θJA θJC TSTG IO Symbol VCC VRCC B Value 30 -30 Unlimited 400 (Note 2) 600 800 550 227 49 -50 to 150 300 Unit V V Gauss mA mA mA mW oC/W oC/W oC AH266 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Note 2: Continuos output current is 200mA at 85oC. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Temperature Symbol VCC TA Min 5 -20 Max 28 85 Unit V o C Feb. 2007 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Electrical Characteristics (TA=25oC, VCC=24V, unless otherwise specified) Parameter Low Supply Voltage Output Saturation Voltage Output Saturation Voltage Output Leakage Current Supply Current Output Rise Time Output Fall Time Switch Time Differential Output Zener Breakdown Voltage Symbol VCE VSAT1 VSAT2 IOL ICC tr tf ∆t VZO Test Condition VCC=5V, IO=100mA IO=500mA IO=300mA VDO, VDOB=24V VCC=24V, Output Open RL=820Ω, CL=20pF RL=820Ω, CL=20pF RL=820Ω, CL=20pF Min Typ 0.8 1.1 0.9 0.1 3.5 3.0 0.3 3.0 61 Max 1.1 1.5 1.25 10 6 10 1.5 10 Unit V V V µA mA µs µs µs V AH266 Magnetic Characteristics (TA=25oC) Parameter Operating Point Symbol BOP BRP BHYS Grade A B Releasing Point Hysteresis A B -70 -100 80 Min 10 Typ Max 70 100 -10 Unit Gauss Gauss Gauss Gauss Gauss VDO (V) Off-state High Turn off BHYS Turn on VSAT On-state N BRP 0 BOP Low S Magnetic Flux Density (Gauss) Feb. 2007 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Magnetic Characteristics (Continued) AH266 +24V AH266 VCC DO DOB GND S Marking Side 1 2 3 4 R1 820Ω R2 DO (VOUT1) DOB (VOUT2) C1 C2 N 820Ω 20pF 20pF Figure 4. Basic Test Circuit DO (V) 16 DOB (V) 16 14 12 10 8 6 4 2 -20 0 20 40 VCC 14 12 10 8 6 4 2 VCC VSAT 20 40 VSAT -40 -40 -20 0 Magnetic Flux Density B (Gauss) Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density Feb. 2007 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Performance Characteristics AH266 4.0 3.6 3.2 80 60 BOP/BRP/BHYS (GS) 2.8 TA=25 C 40 o ICC (mA) 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 20 0 BOP BRP BHYS TA=25 C o -20 -40 5 10 15 20 25 VCC (V) VCC (V) Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC 80 800 60 600 BOP/BRP/BHYS (GS) 40 20 0 BOP BRP BHYS VCC=24V PD (mW) 400 200 -20 -40 -20 0 20 o 40 60 80 0 -25 0 25 50 75 100 125 150 TA ( C) TA ( C) o Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature Feb. 2007 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Performance Characteristics (Continued) AH266 6 1200 5 VCC=4V VCC=14V VCC=24V VSAT (mV) 1100 VCC=24V IO=300mA 1000 4 ICC (mA) 900 3 800 2 700 1 600 0 -20 0 20 o 40 60 80 500 -20 0 20 o 40 60 80 TA ( C) TA ( C) Figure 11. ICC vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature 500 450 400 350 TA=25 C o IO(max) (mA) 300 250 200 150 100 50 0 5 10 15 20 25 VCC (V) Figure 13. IO(max) vs. VCC Feb. 2007 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Applications D1 AH266 AH266 COIL1 VCC DO DOB GND COIL2 1 2 3 4 VCC Z1 Z2 Z1, Z2: Zener diode, 2*VCC≤VZ≤60V Figure 14. Typical Application Circuit with D1 Feb. 2007 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Mechanical Dimensions TO-94 0.500(0.020) 0.700(0.028) 1.400(0.055) 1.800(0.071) 4.980(0.196) 5.280(0.208) 1.850(0.073) 0.360(0.014) 0.510(0.020) 3.780(0.149) 4.080(0.161) 45°TYP AH266 Unit: mm(inch) 0.700(0.028) 0.900(0.035) 1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) Feb. 2007 Rev. 1. 1 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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